MRF18060BLSR3 [FREESCALE]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | MRF18060BLSR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总12页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF18060B
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
MRF18060BLR3
MRF18060BLSR3
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications. Specified for GSM 1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
1930-1990 MHz, 60 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
CASE 465-06, STYLE 1
NI-780
MRF18060BLR3
CASE 465A-06, STYLE 1
NI-780S
MRF18060BLSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +65
-0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
180
1.03
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.97
°C/W
θ
JC
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
Machine Model
2 (Minimum)
M3 (Minimum)
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
V
65
—
—
—
—
—
—
6
Vdc
μAdc
μAdc
(BR)DSS
(V = 0 Vdc, I = 10 μAdc)
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate-Source Leakage Current
I
1
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 300 μAdc)
V
V
2
—
3.9
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 500 mAdc)
2.5
—
4.5
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.27
GS
D
Dynamic Characteristics
(1)
Input Capacitance (Including Input Matching Capacitor in Package)
C
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
iss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(1)
Output Capacitance
C
oss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Reverse Transfer Capacitance
C
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system)
(2)
Common-Source Amplifier Power Gain @ 60 W
G
dB
%
ps
(V = 26 Vdc, I = 500 mA, f = 1930 - 1990 MHz)
11.5
40
13
45
—
—
—
DD
DQ
(2)
Drain Efficiency @ 60 W
η
(V = 26 Vdc, I = 500 mA, f = 1930 - 1990 MHz)
DD
DQ
(2)
Input Return Loss
IRL
dB
(V = 26 Vdc, P = 60 W CW, I = 500 mA,
—
-10
DD
out
DQ
f = 1930 - 1990 MHz)
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring
batch-to-batch consistency.
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
2
Z5
V
SUPPLY
+
R1
C3
Z6
C2
V
BIAS
C1
R2
RF
OUTPUT
C7
C8
R3
Z4
Z7
RF
INPUT
C9
C4
C6
Z1
Z2
Z3
C5
DUT
C1, C3
C2
C4, C8
C5
10 pF, 100B Chip Capacitors
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
C6
C7, C9
R1, R2
R3
®
Teflon Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
V
V
BIAS
C2
SUPPLY
R1
C1
C3
C7
R2
R3
C6
C9
C4
C5
C8
Ground
Ground
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
C1
T1
R1
R5
R2
V
SUPPLY
+
C2
C3
C4
R3
R4
T2
C5
R6
RF
INPUT
RF
OUTPUT
Z6
Z7
Z1
Z2
Z3
Z4
Z5
C7
C8
C6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
T1
T2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
LP2951 Micro-8 Voltage Regulator
BC847 SOT-23 NPN Transistor
0.159″ x 0.055″ Microstrip
0.982″ x 0.055″ Microstrip
0.087″ x 0.055″ Microstrip
0.512″ x 0.787″ Microstrip
0.433″ x 1.220″ Microstrip
1.039″ x 0.118″ Microstrip
10 pF Chip Capacitors, ACCU-P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU-P (0805)
1 pF Chip Capacitor, ACCU-P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
0.268″ x 0.055″ Microstrip
®
Substrate = 0.5 mm Teflon Glass, ε = 2.55
R4
2.2 kΩ Chip Resistor (0805)
r
R5
5 kΩ, SMD Potentiometer
Figure 3. 1800 - 2000 MHz Demo Board Schematic
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
4
V
BIAS
Ground
V
SUPPLY
C4
R1
C1
R2
R3
T1
R4
R5
T2
C2
C3
C5
R6
C8
C7
C6
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
I
= 750 mA
DQ
P = 5 W
in
500 mA
300 mA
2.5 W
1 W
24
100 mA
V
= 26 Vdc
f = 1880 MHz
DD
V
= 26 Vdc
DD
= 500 mA
28
9
8
10
0
I
DQ
1
10
, OUTPUT POWER (WATTS)
100
18
20
22
26
30
P
out
V , SUPPLY VOLTAGE (VOLTS)
DD
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
90
80
70
60
50
40
30
20
60
55
50
90
80
70
60
50
40
30
20
P = 6 W
in
3 W
h
45
P
out
40
35
30
25
V
= 26 Vdc
= 500 mA
DD
I
DQ
1 W
V
I
= 26 Vdc
= 500 mA
DD
0.5 W
DQ
10
0
20
15
10
0
f = 1880 MHz
1800
1820
1840
1860
1880
1900
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
P , INPUT POWER (WATTS)
in
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
15.0
0
−2
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
G
−4
ps
−6
−8
−10
−12
−14
−16
IRL
V
I
= 26 Vdc
= 500 mA
DD
−18
−20
10.5
10.0
DQ
1700
1800
1900
2000
2100
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
6
Z = 5 Ω
o
Z
load
f = 1700 MHz
f = 1700 MHz
f = 2100 MHz
Z
source
f = 2100 MHz
V
DD
= 26 V, I = 500 mA, P = 60 W CW
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
1700
1800
1900
2000
2100
0.60 - j2.53
0.80 - j3.20
0.92 - j3.42
1.07 - j3.59
1.31 - j4.00
2.27 - j3.44
2.05 - j3.05
1.90 - j2.90
1.64 - j2.88
1.29 - j2.99
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 10. Series Equivalent Source and Load Impedance
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
8
NOTES
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF18060BLR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−−
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
C
D
E
(LID)
N
(LID)
R
F
M
M
M
ccc
T A
B
B
M
M
M
B
H
ccc
T A
T A
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
M
T A
M
aaa
B
bbb
R
S
H
U
Z
−−−
−−−
C
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
CASE 465A-06
ISSUE H
NI-780S
MRF18060BLSR3
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF18060B
Rev. 8, 5/2006
相关型号：
MRF18085A
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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