MRF6S19140HR3_07 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6S19140HR3_07 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总11页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S19140H
Rev. 5, 5/2007
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HR3
MRF6S19140HSR3
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA,
1930-1990 MHz, 29 W AVG., 28 V
2 x N-CDMA
P
out = 29 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
LATERAL N-CHANNEL
RF POWER MOSFETs
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465B-03, STYLE 1
NI-880
MRF6S19140HR3
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C-02, STYLE 1
NI-880S
MRF6S19140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
R
θ
JC
°C/W
0.33
0.38
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 300 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1150 mAdc, Measured in Functional Test)
2.8
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3 Adc)
V
0.1
0.21
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
rss
—
2
—
pF
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1150 mA, P = 29 W Avg., f1 = 1930 MHz,
DD
DQ
out
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
15
26
—
—
—
16
27.5
-37
-51
-15
18
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-35
-48
-9
dBc
dBc
dB
1. Part is internally matched both on input and output.
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
2
V
SUPPLY
+
V
BIAS
C5
C9
C11
Z8
C15
B1
R5
R3
+
C13
R1
C7
C3
Z5
Z6
Z7
Z9
Z10
RF
OUTPUT
C2
Z1
Z2
Z3
Z4
RF
INPUT
C1
DUT
V
BIAS
V
SUPPLY
B2
R6
R4
C6
C10 C12
+
C14
R2
C8
C4
Z1
0.864″ x 0.082″ Microstrip
1.373″ x 0.082″ Microstrip
0.282″ x 0.900″ Microstrip
0.103″ x 0.900″ Microstrip
0.094″ x 1.055″ Microstrip
0.399″ x 1.055″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.115″ x 0.569″ Microstrip
0.191″ x 0.289″ Microstrip
0.681″ x 0.081″ Microstrip
1.140″ x 0.081″ Microstrip
Z2
Z3
Z4
Z5
Z6
Arlon GX0300-55-22, 0.030″, ε = 2.5
r
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Beads, Surface Mount
Part Number
2743019447
Manufacturer
Fair-Rite
B1, B2
C1, C2
39 pF Chip Capacitors
ATC100B390JT500XT
ATC100B9R1CT500XT
GRM55DR61H106KA88B
EMVY500ADA470MF80G
ESMG630ELL471MK205
CRCW12065600FKTA
CRCW12061001FKTA
CRCW120612R0FKTA
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
ATC
C7, C8, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
47 μF, 50 V Electrolytic Capacitors
470 μF, 63 V Electrolytic Capacitor
560 kΩ, 1/4 W Chip Resistors
1.0 kΩ, 1/4 W Chip Resistors
12 Ω, 1/4 W Chip Resistors
Murata
Nippon
C13, C14
C15
United Chemi-Con
Vishay
R1, R2
R3, R4
R5, R6
Vishay
Vishay
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
3
6S19140
C13
C5
C9 C11
R3
B1 R5
C3
R1
C7
C15
C1
C2
C8
R2
R4
B2 R6
C4
C6
C10 C12
C14
© Motorola, Inc.
2002 DS1464
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
20
40
η
D
18
16
14
12
10
8
30
20
10
G
ps
V
= 28 Vdc, P = 29 W (Avg.), I = 1150 mA
out DQ
DD
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
0
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
−10
−20
−40
IRL
IM3
6
4
−60
ACPR
−80
2
0
−100
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.
18
50
η
D
16
14
12
10
40
G
V
= 28 Vdc, P = 75 W (Avg.), I = 1150 mA
out DQ
ps
DD
30
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
20
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
0
IRL
−20
−40
−60
−80
8
6
4
2
IM3
ACPR
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 75 Watts Avg.
18
−10
V
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
DD
I
= 1700 mA
DQ
17
16
15
14
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
1500 mA
1150 mA
900 mA
I
= 1700 mA
DQ
900 mA
600 mA
600 mA
−40
−50
−60
V
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
DD
13
12
1150 mA
1500 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
400
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
1000
P
, OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
0
58
57
56
55
54
53
52
51
50
49
48
47
46
Ideal
V
= 28 Vdc, P = 160 W (PEP), I = 1150 mA
out DQ
Two−Tone Measurements
DD
P3dB = 53.1 dBm (204 W)
P1dB = 52.3 dBm (171 W)
−10
−20
−30
−40
(f1 + f2)/2 = Center Frequency of 1960 MHz
Actual
3rd Order
5th Order
V
= 28 Vdc, I = 1150 mA
DQ
DD
7th Order
−50
−60
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
0.1
1
10
100
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
50
−20
V
= 28 Vdc, I = 1150 mA
DQ
DD
IM3
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
−30
40
30
20
10
η
D
−40
ACPR
@ 0.01% Probability (CCDF)
= 25°C
T
C
−50
G
ps
−60
−70
0
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
70
18
17
16
15
14
13
12
17
60
G
ps
16
V
= 32 V
DD
50
15
14
40
30
28 V
13
24 V
12
11
20
10
0
10
9
11
10
V
= 28 Vdc, I = 1150 mA
DQ
I
= 1150 mA
f = 1960 MHz
DD
η
DQ
D
f = 1960 MHz, T = 25°C
C
8
0
50
100
P , OUTPUT POWER (WATTS) CW
out
150
200
250
1
10
, OUTPUT POWER (WATTS) CW
100
300
P
out
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
8
7
6
5
10
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 29 W Avg., and η = 27.5%.
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
N-CDMA TEST SIGNAL
100
10
0
1.2288 MHz
Channel BW
−10
−20
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1
−30
−40
−50
−60
−70
−80
0.1
0.01
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.001
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW Integrated BW
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
−100
Figure 13. 2-Carrier CCDF N-CDMA
−7.5 −6 −4.5 −3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2-Carrier N-CDMA Spectrum
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
7
f = 2020 MHz
Z
load
Z = 5 Ω
o
f = 1900 MHz
Z
source
f = 1900 MHz
f = 2020 MHz
V
= 28 Vdc, I = 1150 mA, P = 29 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1900
1930
1960
2.27 - j3.95
2.00 - j4.24
1.72 - j3.96
1.13 - j0.67
1.11 - j0.60
1.07 - j0.46
1990
2020
1.80 - j3.51
1.69 - j3.17
1.06 - j0.30
1.01 - j0.17
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
4
B
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X
Q
bbb
1
M
M
M
B
T
A
B
(FLANGE)
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
3
INCHES
DIM MIN MAX
MILLIMETERS
K
2
MIN
33.91
13.6
MAX
34.16
13.8
A
B
1.335
0.535
0.147
0.495
0.035
0.003
1.345
0.545
0.200
0.505
0.045
0.006
D
T
C
3.73
5.08
M
M
M
bbb
A
B
D
12.57
0.89
0.08
12.83
1.14
0.15
E
F
G
1.100 BSC
27.94 BSC
H
0.057
0.175
0.872
0.871
.118
0.515
0.515
0.007 REF
0.010 REF
0.015 REF
0.067
0.205
0.888
0.889
.138
1.45
4.44
22.15
19.30
3.00
13.10
13.10
0.178 REF
0.254 REF
0.381 REF
1.70
5.21
22.55
22.60
3.51
(INSULATOR)
(LID)
M
(LID)
R
K
M
M
M
M
M
M
M
M
M
M
bbb
ccc
T
T
A
A
B
B
ccc
T
T
A
A
B
N
Q
(INSULATOR)
S
N
R
0.525
0.525
13.30
13.30
S
M
M
M
aaa
B
aaa
bbb
ccc
H
C
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
SEATING
PLANE
E
T
A
A
CASE 465B-03
ISSUE D
(FLANGE)
NI-880
MRF6S19140HR3
B
B
1
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
K
2
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
M
M
M
bbb
T
A
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
22.99
13.60
3.73
MAX
23.24
13.80
5.08
A
B
0.905
0.535
0.147
0.495
0.035
0.003
0.057
0.170
0.872
0.871
0.515
0.515
0.915
0.545
0.200
0.505
0.045
0.006
0.067
0.210
0.888
0.889
0.525
0.525
(LID)
R
(INSULATOR)
(LID)
M
C
D
12.57
0.89
0.08
12.83
1.14
0.15
M
M
M
ccc
T
T
A
A
B
M
M
M
M
bbb
ccc
T
A
B
B
E
(INSULATOR)
S
N
F
H
1.45
4.32
1.70
5.33
M
M
M
M
M
T
A
aaa
B
K
M
22.15
19.30
13.10
13.10
22.55
22.60
13.30
13.30
H
N
R
C
S
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
F
E
A
SEATING
T
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
(FLANGE)
CASE 465C-02
ISSUE D
NI-880S
MRF6S19140HSR3
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
5
May 2007
•
•
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet
as functionality is standard, p. 1
•
•
Added “Optimized for Doherty Applications” bullet to Features section, p. 1
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
•
•
•
•
•
•
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected V to V in the RF test condition voltage callout for V and added “Measured in
GS(Q)
DS
DD
Functional Test”, On Characteristics table, p. 2
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
2
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps and listed
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History, p. 10
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
10
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Document Number: MRF6S19140H
Rev. 5,5/2007
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