MRF6S24140HR3 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6S24140HR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总9页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S24140H
Rev. 0, 3/2007
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for large-signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
MRF6S24140HR3
MRF6S24140HSR3
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
2450 MHz, 140 W, 28 V
CW
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
LATERAL N-CHANNEL
RF POWER MOSFETs
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465B-03, STYLE 1
NI-880
MRF6S24140HR3
CASE 465C-02, STYLE 1
NI-880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
T
J
200
°C
Table 2. Thermal Characteristics
Characteristic
(1,2)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
R
°C/W
θ
JC
0.29
0.33
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 300 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1300 mAdc)
2.8
0.21
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3 Adc)
V
0.1
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
—
2
—
pF
rss
DS
GS
Functional Tests (In Freescale Test Fifxture, 50 ohm system) V = 28 Vdc, I = 1300 mA, P = 28 W Avg., f1 = 2300 MHz,
DD
DQ
out
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
13
23
—
—
—
15.2
25
17
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-37
-40
-15
-35
-38
—
dBc
dBc
dB
1. Part internally matched both on input and output.
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
2
B1
R1
V
SUPPLY
C8
C7
V
BIAS
+
+
+
C17
Z12
C5
C15 C16
C18
C10
C9
Z14
Z15
RF
OUTPUT
C3
Z8
Z9
Z10
Z11
Z13
RF
INPUT
Z6
Z5
C2
Z1
Z2
Z3
Z4
C1
Z7
DUT
+
C4
C21
C6
C19 C20
C22
B2
C12
C11
+
+
C14
C13
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.678″ x 0.068″ Microstrip
0.466″ x 0.068″ Microstrip
0.785″ x 0.200″ Microstrip
0.200″ x 0.530″ Microstrip
0.025″ x 0.530″ Microstrip
0.178″ x 0.050″ Microstrip
0.097″ x 1.170″ Microstrip
Z9
0.193″ x 1.170″ Microstrip
0.115″ x 0.550″ Microstrip
0.250″ x 0.110″ Microstrip
0.538″ x 0.068″ Microstrip
0.957″ x 0.068″ Microstrip
0.673″ x 0.095″ Microstrip
Z10
Z11
Z12
Z13
Z14, Z15
PCB
Arlon GX0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part
Description
47 Ω, 100 MHz Short Ferrite Beads, Surface Mount
5.6 pF Chip Capacitors
Part Number
2743019447
Manufacturer
B1, B2
Fair-Rite
C1, C2, C3, C4, C5, C6
C7, C11
ATC600B5R6BT500XT
C1825C103J1RAC
ATC
0.01 μF, 100 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
Kemet
C8, C12, C15, C19
C9, C13
C1825C225J5RAC
Kemet
22 μF, 25 V Tantalum Capacitors
47 μF, 16 V Tantalum Capacitors
10 μF, 50 V Chip Capacitors
T491D226M025AT
Kemet
C10, C14
T491D476K016AC
Kemet
C16, C17, C20, C21
C18, C22
GRM55DR61H106KA88B
EMVY50VC221MJ10TP
CRC1206240RFKTA
Murata
220 μF, 50 V Electrolytic Capacitors
240 Ω, 1/4 W Chip Resistor
United Chemi-Con
Vishay
R1
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
3
C17
C5
B1
+
+
+
R1
C10 C9
C8*
C15
C18
C7*
C16
C3
C1
C2
MRF6S24140H
Rev. 1.0
C4
C20
C21
C19
+
+
+
C14
B2
C6
C13
C22
C11*
C12*
* Stacked
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS — 2450 MHz
16
50
I
= 1200 mA
f = 2450 MHz
DQ
V
DD
= 28 V
32 V
15
14
40
30
20
10
0
30 V
G
ps
13
12
11
32 V
30 V
η
D
28 V
100
1
10
, OUTPUT POWER (WATTS) CW
500
P
out
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
14.5
14
60
50
40
G
ps
13.5
13
30
20
10
0
12.5
12
V
= 28 V
= 1200 mA
DD
I
DQ
f = 2450 MHz
η
D
11.5
1
10
100
P , OUTPUT POWER (WATTS) CW
out
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
7
15
14
13
10
1200 mA
1300 mA
1400 mA
G
ps
6
10
1000 mA
1100 mA
12
11
10
5
10
V
= 28 V
f = 2450 MHz
DD
4
10
1
10
, OUTPUT POWER (WATTS) CW
100
90
110
130
150
170
190
210
230
250
P
out
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 140 W CW, and η = 45%.
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 6. MTTF versus Junction Temperature
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
5
f = 2450 MHz
Z
source
Z = 10 Ω
o
f = 2450 MHz
Z
load
V
DD
= 28 Vdc, I = 1200 mA, P = 140 W CW
DQ out
f
Z
Z
load
W
source
W
MHz
2450
4.55 + j4.9
1.64 - j6.57
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 7. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
6
PACKAGE DIMENSIONS
4
B
G
2X
Q
1
M
M
M
B
bbb
T
A
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
2
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
D
T
M
M
M
bbb
A
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
33.91
13.6
MAX
34.16
13.8
A
B
1.335
0.535
0.147
0.495
0.035
0.003
1.345
0.545
0.200
0.505
0.045
0.006
(INSULATOR)
(LID)
M
(LID)
R
C
3.73
5.08
D
12.57
0.89
0.08
12.83
1.14
0.15
M
M
M
M
M
M
M
M
M
bbb
ccc
T
T
A
A
B
B
ccc
T
T
A
A
B
E
F
(INSULATOR)
N
S
G
1.100 BSC
27.94 BSC
H
0.057
0.175
0.872
0.871
.118
0.067
0.205
0.888
0.889
.138
1.45
4.44
1.70
5.21
M
M
M
aaa
B
K
M
22.15
19.30
3.00
22.55
22.60
3.51
H
N
Q
C
R
0.515
0.515
0.525
0.525
13.10
13.10
13.30
13.30
S
F
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
SEATING
PLANE
E
T
A
A
STYLE 1:
(FLANGE)
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465B-03
ISSUE D
NI-880
MRF6S24140HR3
B
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
(FLANGE)
INCHES
DIM MIN MAX
MILLIMETERS
MIN
22.99
13.60
3.73
MAX
23.24
13.80
5.08
A
B
0.905
0.535
0.147
0.495
0.035
0.003
0.057
0.170
0.872
0.871
0.515
0.515
0.915
0.545
0.200
0.505
0.045
0.006
0.067
0.210
0.888
0.889
0.525
0.525
K
2
C
D
12.57
0.89
0.08
12.83
1.14
0.15
D
E
M
M
M
F
bbb
T
A
B
H
1.45
4.32
1.70
5.33
K
M
22.15
19.30
13.10
13.10
22.55
22.60
13.30
13.30
(LID)
R
(INSULATOR)
(LID)
M
N
R
M
M
M
M
ccc
T
T
A
A
B
M
M
M
M
bbb
T
T
A
A
B
B
S
(INSULATOR)
S
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
N
M
M
M
M
ccc
aaa
B
STYLE 1:
H
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
A
SEATING
T
PLANE
CASE 465C-02
ISSUE D
A
(FLANGE)
NI-880S
MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
7
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
• Initial Release of Data Sheet
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
8
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Document Number: MRF6S24140H
Rev. 0,3/2007
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