概述
规格参数
数据手册SUD42N03-3M9P-GE3 概述
N-Channel 30 V (D-S) MOSFET N沟道30 V （D -S ）的MOSFET 功率场效应晶体管
SUD42N03-3M9P-GE3 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TO-252 |
| 包装说明： | SMALL OUTLINE, R-PSSO-G2 | 针数： | 4 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.83 | Is Samacsys： | N |
| 雪崩能效等级（Eas）： | 101 mJ | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 107 A | 最大漏极电流 (ID)： | 42 A |
| 最大漏源导通电阻： | 0.0039 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码： | TO-252 | JESD-30 代码： | R-PSSO-G2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 2 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 73.5 W |
| 最大脉冲漏极电流 (IDM)： | 120 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 30 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
SUD42N03-3M9P-GE3 数据手册
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Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
ID (A)
107d
103d
Qg (Typ.)
Definition
0.0039 at VGS = 10 V
0.0045 at VGS = 4.5 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
30
67
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
DC/DC Converters
- Synchronous Buck Low Side
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
T
C = 25 °C (Silicon Limited)
C = 70 °C (Silicon Limited)
107d
85d
Continuous Drain Current
ID
TC = 25 °C (Package Limited)
42
A
Pulsed Drain Current (t = 300 µs)
Avalanche Current
IDM
IAS
120
45
Single Avalanche Energya
L = 0.1 mH
TC = 25 °C
EAS
101
73.5b
mJ
W
Maximum Power Dissipationa
PD
T
A = 25 °Cc
2.5
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
RthJA
Limit
50
Unit
°C/W
Junction-to-Case (Drain)
RthJC
1.7
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A.
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
www.vishay.com
1
SUD42N03-3m9P
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
30
1
V
2.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 125 °C
VDS = 30 V, VGS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
Zero Gate Voltage Drain Current
IDSS
50
µA
250
On-State Drain Currenta
ID(on)
RDS(on)
gfs
50
A
S
VGS = 10 V, ID = 22 A
0.0032
0.0037
110
0.0039
0.0045
Drain-Source On-State Resistancea
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
3535
680
400
67
VGS = 0 V, VDS = 15 V, f = 1 MHz
pF
100
Qgs
Qgd
Rg
VDS = 15 V, VGS = 10 V, ID = 20 A
f = 1 MHz
10.5
12.2
1.4
11
nC
0.3
2.8
20
20
53
20
td(on)
tr
td(off)
tf
10
V
DD = 15 V, RL = 1.5
ns
ID 10 A, VGEN = 10 V, Rg = 1
35
10
Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C
Continuous Current
IS
ISM
42
120
1.5
62
3
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 10 A, VGS = 0 V
0.83
41
2
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 10 A, dI/dt = 100 A/µs
40
60
nC
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
100
80
60
40
20
0
0.0045
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0.0040
0.0035
0.0030
0.0025
V
= 4.5 V
= 10 V
GS
V
GS
0
0.5
1.0
1.5
2.0
0
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
Output Characteristics
On-Resistance vs. Drain Current
5
4
3
2
1
0
0.015
0.012
0.009
0.006
0.003
0
T
= 150 °C
J
T
= 25 °C
C
T
= 125 °C
T
J
= 25 °C
C
T
C
= - 55 °C
0
0.6
1.2
1.8
2.4
3.0
2
4
6
8
10
V
- Gate-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
GS
On-Resistance vs. Gate-to-Source Voltage
Transfer Characteristics
10
8
300
240
180
120
60
I
= 20 A
D
T
= - 55 °C
C
V
= 15 V
DS
6
T
C
= 25 °C
V
= 8 V
V
DS
= 24 V
DS
4
T
C
= 125 °C
2
0
0
20
40
60
80
0
12
24
36
48
60
Q
g
- Total Gate Charge (nC)
I
- Drain Current (A)
D
Gate Charge
Transconductance
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
www.vishay.com
3
SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.1
100
1.8
1.5
1.2
0.9
0.6
I
= 250 µA
D
T
J
= 150 °C
10
T
J
= 25 °C
1
0.1
0.0
- 50 - 25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
5000
4000
3000
2000
1000
0
41
39
37
35
33
C
iss
I
= 250 µA
D
C
oss
C
rss
0
5
10
15
20
25
30
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
V
DS
- Drain-to-Source Voltage (V)
J
Capacitance
Drain Source Breakdown vs. Junction Temperature
1.8
1.5
1.2
0.9
0.6
160
I
= 20 A
D
120
80
40
0
Package Limited
V
GS
= 10 V
V
GS
= 4.5 V
- 50 - 25
0
T
25
50
75
100 125 150
0
25
50
75
100
125
150
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
J
On-Resistance vs. Junction Temperature
Current Derating
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4
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
100
Limited by R
*
DS(on)
100
10
100 µs
1 ms
T = 25 °C
J
T = 150 °C
J
10 ms
10
100 ms,
1 s, 10 s, DC
1
T
= 25 °C
0.1
C
Single Pulse
BVDSS
Limited
0.01
1
10
-5
-4
-3
-2
-1
0.1
1
10
100
10
10
Time (s)
10
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66824.
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
www.vishay.com
5
Package Information
Vishay Siliconix
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
Document Number: 71197
18-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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