SUD50N03-12P [FREESCALE]
N-Channel 30 V (D-S) MOSFET; N沟道30 V (D -S )的MOSFET![SUD50N03-12P](http://pdffile.icpdf.com/pdf1/p00193/img/icpdf/SUD50N_1090094_icpdf.jpg)
型号: | SUD50N03-12P |
厂家: | ![]() |
描述: | N-Channel 30 V (D-S) MOSFET |
文件: | 总7页 (文件大小:423K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
FEATURES
•
TrenchFET® Power MOSFET
PRODUCT SUMMARY
I
D (A)a
17.5
VDS (V)
RDS(on) ()
•
100 % R and UIS Tested
g
0.0120 at VGS = 10 V
0.0175 at VGS = 4.5 V
30
14.5
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N03-12P-E3 (Lead (PB) free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
17.5
12.4
40
Continuous Drain Currenta
ID
TA = 100 °C
IDM
IS
Pulsed Drain Current
A
Continuous Source Current (Diode Conduction)a
Avalanche Current
5
IAS
EAS
30
L = 0.1 mH
Single Pulse Avalanche Energy
45
mJ
W
TC = 25 °C
TA = 25 °C
46.8
PD
Maximum Power Dissipation
6.5a
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
18
Maximum
Unit
t 10 s
23
50
Maximum Junction-to-Ambienta
RthJA
Steady State
40
°C/W
RthJC
Maximum Junction-to-Case
2.6
3.2
Note:
a. Surface mounted on FR4 board, t 10 s.
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min .
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
30
1
V
nA
µA
A
3
VDS = 0 V, VGS
=
20 V
100
1
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125 °C
VDS =5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
50
ID(on)
40
15
VGS = 10 V, ID = 20 A
0.0100
0.0138
0.0120
0.0170
0.0175
Drain-Source On-State Resistanceb
RDS(on)
gfs
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 4.5 V, ID = 15 A
Forward Transconductanceb
Dynamica
VDS = 15 V, ID = 20 A
S
Input Capacitance
Ciss
Coss
Crss
Qg
1600
285
140
28
6
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
42
VDS = 15 V, VGS = 10 V, ID = 50 A
f = 1 MHz
Qgs
Qgd
Rg
nC
5
0.3
1.5
9
3.0
15
25
30
20
td(on)
tr
td(off)
tf
VDD = 15 V, RL = 0.3
ID 50 A, VGEN = 10 V, RG = 2.5
15
20
12
ns
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
ISM
VSD
trr
100
1.5
70
A
V
IF = 40 A, VGS = 0 V
1.2
25
IF = 50 A, dI/dt = 100 A/µs
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
80
60
V
GS
= 10 thru 5 V
60
40
20
0
40
20
0
4 V
T
= 125 °C
C
25 °C
3 V
- 55 °C
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
0.05
0.04
0.03
T
= - 55 °C
C
60
40
20
0
25 °C
125 °C
V
GS
= 4.5 V
0.02
0.01
0.00
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
- Drain Current (A)
60
80
I
D
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2500
2000
1500
1000
500
10
8
V
D
= 15 V
DS
= 50 A
I
C
iss
6
4
2
C
oss
C
rss
0
0
0
5
10
15
20
25
30
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
D
= 10 V
GS
= 15 A
I
T = 150 °C
J
T = 25 °C
J
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
THERMAL RATINGS
1000
20
Limited
DS(on)
16
12
8
by R
*
100
10
10, 100 µs
1 ms
10 ms
100 ms
1 s
1
10 s
T
= 25 °C
A
0.1
4
Single Pulse
DC, 100 s
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
T
- Ambient Temperature (°C)
A
* VGS > minimum VGS at which RDS(on) is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
100
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
MAX.
C1
b2
DIM.
A
MIN.
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
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including but not limited to the warranty expressed therein.
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