TK7P50D [FREESCALE]
Silicon N Channel MOS Type (Ï-MOSâ ¦); 硅N沟道MOS型（I ?? - 莫萨？ | ）
| 型号： | TK7P50D |
| 厂家： | 
Freescale |
| 描述： | Silicon N Channel MOS Type (Ï-MOSâ
¦) |
| 文件： | 总5页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK7P50D
Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Unit: mm
6.6 ± 0.2
5.34 ± 0.13
•
•
•
•
Low drain-source ON-resistance: R
High forward transfer admittance: ⎪Y ⎪ = 2.5 S (typ.)
= 1.0 Ω (typ.)
DS (ON)
0.58MAX
fs
Low leakage current: I
= 10 μA (max) (V
= 500 V)
DSS
DS
Enhancement-mode: V = 2.4 to 4.4 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
1.14MAX
2.29
0.76 ± 0.12
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
500
±30
7
V
V
DSS
Gate-source voltage
GSS
1
2
3
DC
(Note 1)
I
D
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURCE
Drain current
A
Pulse (t = 1 ms)
I
28
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
100
105
W
D
AS
AR
JEDEC
JEITA
⎯
⎯
Single pulse avalanche energy
E
mJ
(Note 2)
Avalanche current
I
7
10
A
TOSHIBA
2-7K1A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight : 0.36 g (typ.)
T
ch
150
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
1.25
125
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 3.64 mH, R = 25 Ω, I = 7 A
1
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±30 V, V
= 500 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±1
10
μA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
500
2.4
⎯
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
4.4
1.22
⎯
V
th
DS
GS
DS
D
R
= 10 V, I = 3.5 A
1.0
2.5
600
4
Ω
DS (ON)
⎪Y ⎪
D
= 10 V, I = 3.5 A
0.7
⎯
S
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
70
⎯
oss
10 V
GS
0 V
I
= 3.5 A
V
OUT
D
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
18
40
8
V
R
L
=
Turn-on time
t
on
50 Ω
57 Ω
Switching time
ns
Fall time
t
f
V
≈ 200 V
DD
Duty ≤ 1%, t = 10 μs
w
Turn-off time
t
55
off
12
7
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
V
≈ 400 V, V
= 10 V, I = 7 A
nC
Q
DD
GS
D
gs
gd
5
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
7
Unit
A
Continuous drain reverse current
I
⎯
⎯
⎯
⎯
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
I
⎯
⎯
⎯
⎯
⎯
⎯
28
−1.7
⎯
A
V
DRP
V
I
I
= 7 A, V
= 7 A, V
= 0 V
DSF
DR
DR
GS
GS
t
= 0 V,
1200
7
ns
μC
rr
dI /dt = 100 A/μs
DR
Q
rr
⎯
Marking (Note 4)
TK7P50D
Part No. (or abbreviation code)
Lot No.
Note 4:
* Weekly code: (Four digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last 2digits of the calendar year)
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I
– V
I
– V
D
DS
D
DS
10
8
5
4
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
7.25
10
8
7
7.75
6.75
6.5
7.5
6
4
2
0
3
2
7.25
7
6.25
6.75
6.5
6
1
0
V
= 5 .5V
V
= 6V
GS
GS
8
10
0
2
4
6
10
10
10
0
20
30
40
50
DRAIN-SOURCE VOLTAGE
V
(V)
DS
DRAIN-SOURCE VOLTAGE
V
(V)
DS
I
D
– V
V
– V
DS GS
GS
10
8
12
COMMON SOURCE
= 20 V
COMMON SOURCE
Tc = 25℃
PULSE TEST
V
DS
PULSE TEST
10
8
7
6
4
2
0
6
4
3.5
25
100
ID = 1.8 A
2
Tc = −55 °C
0
0
0
2
4
6
8
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
GS
R
– I
D
⎪Y ⎪ – I
fs
DS (ON)
D
10
10
COMMON SOURCE
COMMON SOURCE
= 10 V
V
Tc = 25°C
DS
PULSE TEST
PULSE TEST
Tc = −55 °C
1
1
25
100
V
= 10, 15 V
GS
0.1
0.1
0.1
0.1
1
1
10
100
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
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R
– Tc
I
– V
DR DS
DS (ON)
5
4
10
COMMON SOURCE
= 10 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
V
GS
PULSE TEST
3
2
7
1
3.5
I
= 1.8 A
D
10
5
1
0
3
1
−0.6
V
= 0,−1 V
GS
0.1
0
−80
−40
0
40
80
120
160
100
160
−0.2
−0.4
−0.8
−1.0
−1.2
−1.4
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
10000
5
4
3
2
1000
100
10
C
iss
C
oss
COMMON SOURCE
COMMON SOURCE
= 0 V
1
0
V
= 10 V
DS
= 1 mA
C
rss
V
GS
I
D
f = 1 MHz
PULSE TEST
Tc = 25°C
1
0.1
1
10
−80
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
– Tc
D
500
20
160
120
80
V
DS
400
300
200
100
0
200
16
12
V
= 100 V
DD
400
8
4
0
COMMON SOURCE
= 7 A
V
GS
I
D
40
Tc = 25°C
PULSE TEST
0
0
0
4
8
16
20
40
80
120
12
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
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r
th
– t
w
10
1
Duty=0.5
0.2
P
DM
0.1
0.1
0.05
t
SINGLE PULSE
T
Duty = t/T
0.01
0.02
R
= 1.25 °C/W
th (ch-c)
0.01
10μ
100μ
1m
10m
100m
1
10
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
E – T
AS ch
100
10
150
120
I
max (pulsed) *
D
I
max (continuous)
D
100 μs *
90
60
30
1 ms *
1
DC operation
Tc = 25°C
0.1
0
25
50
75
100
125
150
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
0.01
0.001
CHANNEL TEMPEATURE (INITIAL)
(°C)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
T
ch
B
VDSS
10
100
1000
1
15 V
I
AR
DRAIN-SOURCE VOLTAGE
V
DS
(V)
0 V
V
V
DD
DS
B
TEST CIRCUIT
WAVEFORM
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 3.64 mH
B
VDSS
DD
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