FDS222T3G [FS]
Common Cathode Silicon Dual Switching Diode;
| 型号： | FDS222T3G |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Common Cathode Silicon Dual Switching Diode |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
TECHNICAL DATA
FDS222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–89 package which is designed for low
power surface mount applications, where board space is at a premium.
3
2
• Fast t
rr
• Low CD
1
• Available in 8 mm Tape and Reel
SC-89
MAXIMUM RATINGS (T = 25 °C)
A
1
ANODE
Rating
Reverse Voltage
Symbol
Value
80
Unit
Vdc
3
CATHODE
2
V
R
ANODE
Peak Reverse Voltage
Forward Current
V
80
Vdc
RM
I
100
300
2.0
mAdc
mAdc
Adc
F
Peak Forward Current
Peak Forward Surge Current
I
FM
I
(1)
FSM
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Symbol
Max
150
Unit
mW
P
D
Junction Temperature
Storage Temperature Range
1. t = 1 µS
C
C
T
150
J
T
stg
–55 to +150
(T = 25 C)
A
ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Symbol
Condition
Min
Max
0.1
1.2
—
Unit
µAdc
I
R
V
R
= 70 V
—
—
80
—
—
V
F
I
= 100 mA
I = 100 µA
R
Vdc
Vdc
pF
F
Reverse Breakdown Voltage
Diode Capacitance
V
R
C
V
= 6.0 V, f = 1.0 MHz
3.5
4.0
D
R
Reverse Recovery Time
t (2)
rr
I
F
= 5.0 mA, V = 6.0 V, R = 100 Ω, I = 0.1 I
rr
ns
R
L
R
2. t Test Circuit on following page.
rr
Driver Marking
FDS222T1G=N
Ordering Information
Device
Marking
N
Shipping
FDS222T1G
3000/Tape&Reel
FDS222T3G
N
10000/Tape&Reel
2008. 4. 23
1/3
Revision No : 0
FDS222
Electrical characteristic curves
Figure 1. Forward Voltage
Figure 2. Reverse Current
Figure 3. Diode Capacitance
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
2008. 4. 23
Revision No : 0
2/3
FDS222
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
2008. 4. 23
Revision No : 0
3/3
FDS222
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
(.512 ±.002’’)
1.5mm Min
(.06’’)
50mm Min
(1.969’’)
A
20 2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
330mm
G
T Max
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
14.4mm
(.56’’)
8 mm
(12.992’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
相关型号：
FDS2570F011
Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS2570L86Z
Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS2572_NL
Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明