FTA1365-F [FS]

General Purpose Transistors;
FTA1365-F
型号: FTA1365-F
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

General Purpose Transistors

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中文:  中文翻译
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SEMICONDUCTOR  
FTA1365  
TECHNICAL DATA  
General Purpose Transistors  
PNP Silicon  
DESCRIPTION  
FTA1365 is a mini package  
silicon PNP epitaxial transistor,  
designed with high collector current and small VCE(sat).  
3
FEATURE  
Small collector to emitter saturation voltage.  
2
VCE(sat)= -0.2V typ  
1
Excellent linearity of DC forward current gain.  
Super mini package for easy mounting  
SOT– 23  
High collector current I =-1A  
CM  
High gain band width product f =180MHz typ  
T
● We declare that the material of product compliance with RoHS requirements.  
● We declare that the material of product is ROHS compliant  
3
COLLECTOR  
1
APPLICATION  
BASE  
Small type motor drive, relay drive, power supply.  
2
EMITTER  
MAXIMUM RATINGSTa=25℃)  
ORDERING INFORMATION  
Symbol  
VCBO  
VCEO  
VEBO  
I O  
Parameter  
Ratings  
-25  
Unit  
V
Device  
Marking  
Shipping  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
FTA1365-E  
FTA1365-F  
FTA1365-G  
AE  
AF  
AG  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
-20  
V
-4  
V
7
- 00  
mA  
mW  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
150  
+125  
Tj  
Tstg  
-55~+125  
ELECTRICAL CHARACTERISTICSTa=25℃)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
Min  
Typ  
-
Max  
-
C to B break down voltage  
V(BR)CBO I C=-10μA , IE =0  
-25  
V
E to B break down voltage  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
V(BR)EBO  
V(BR)CEO  
ICBO  
I E=-10μA , I C =0  
I C=-100μA ,R BE=∞  
V CB=-25V, I E=0mA  
V EB=-2V, I C=0mA  
V CE=-4V, I C=-100mA  
-4  
-20  
-
-
-
-
-
-
-
-
V
V
-1  
-1  
800  
μA  
μA  
IEBO  
-
hFE  
150  
C to E Saturation Vlotage  
Gain bandwidth product  
VCE(sat) I C=-500mA ,IB=-25mA  
fT V CE=-6V, I E=10mA  
-
-
-0.2  
180  
-0.5  
V
-
MHz  
※) It shows hFE classification in below table.  
Item  
150~300  
250~500  
400~800  
hFE Item  
2011. 11. 28  
Revision No : 0  
1/3  
FTA1365  
2011. 11. 28  
Revision No : 0  
2/3  
FTA1365  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
V
G
C
H
J
D
K
P N 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0 037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
2011. 11. 28  
Revision No : 0  
3/3  

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