FTK11NS70F [FS]
11Amps, 700Volts N-Channel Super Juction MOS-FET;
| 型号： | FTK11NS70F |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 11Amps, 700Volts N-Channel Super Juction MOS-FET |
| 文件： | 总7页 (文件大小：692K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
TECHNICAL DATA
FTK11NS70P/F/D
11Amps, 700Volts N-Channel Super Juction MOS-FET
Product Summary
VDS @ Tj,max
RDS(on),max
IDM
700V
0.36Ω
30A
P :
1
TO-220
Qg,typ
28nC
DESCRIPTION
FTK11NS70 Power MOS FET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
F :
1
TO-220F
FEATURES
D :
�
�
�
�
�
Ultra fast body diode
Ultra low RDS(on)
1
TO-252
Ultra low gate charge (typ. Qg = 28nC)
100% UIS tested
RoHS compliant
Applications
SYMBOL
�
Power faction correction (PFC)
2.Drain
�
�
Switched mode power supplies (SMPS)
Uninterruptible power supply (UPS)
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK11NS70P
FTK11NS70F
FTK11NS70D
TO-220
TO-220F
TO-252
G
D
S
Tube
Tube
Tube
G
G
D
D
S
S
Note. Pin Assignmen
G: Gate
D: Drain
S: Source
2019. 05. 30
Revision No : 0
1/7
FTK11NS70P/F/D
Absolute Maximum Ratings
Parameter
Symbol
Value
700
11
Unit
V
Drain - Source Voltage
VDSS
ID
Continuous drain current
( TC = 25°C )
( TC = 100°C )
A
7
A
Pulsed drain current 1)
Gate - Source voltage
IDM
30
A
VGSS
± 30
V
Avalanche energy, single pulse 2)
EAS
350
mJ
Avalanche energy, repetitive 1)
Avalanche current, repetitive 1)
EAR
IAR
12.5
mJ
A
11
83
Power Dissipation
( TC = 25°C )
PD
W
- Derate above 25°C
0.67
W/°C
°C
A
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
TJ, TSTG
IS
-55 to +150
11
IS,pulse
30
A
Thermal Characteristics TO-220/TO-252
Parameter
Symbol
Value
2.5
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
62
Thermal Characteristics TO-220F
Parameter
Symbol
Value
4.3
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
80
2019. 05. 30
Revision No : 0
2/7
FTK11NS70P/F/D
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BVDSS
VGS(th)
IDSS
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.25mA
VDS=700 V, VGS=0 V,
VGS=30 V, VDS=0 V
700
2.0
-
-
-
-
-
-
V
V
4.0
1
Drain cut-off current
μA
nA
Gate leakage current, Forward
IGSSF
-
100
Gate leakage current, Reverse
Drain -source on-state resistance
IGSSR
VGS=-30 V, VDS=0 V
VGS=10 V, ID=5.5A
Tj = 25°C
-
-
-
-
-
-
-100
nA
RDS(on)
0.31
0.69
0.9
0.36
Ω
Tj = 150°C
-
-
Gate resistance
RG
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Ciss
Coss
Crss
td(on)
tr
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
-
-
-
-
1040
780
10
-
-
-
-
-
pF
ns
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
VDD = 380V, ID = 5.5A
16
RG = 4.7Ω, VGS=10V
14
Turn-off delay time
td(off)
tf
-
-
40
5
-
-
Fall time
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs
VDD=480 V, ID=5.5A,
VGS=0 to 10 V
-
-
-
-
6
-
-
-
-
nC
V
Qgd
13
28
5.5
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
VGS=0 V, IF=5.5A
VR=50 V, IF=11A,
dIF/dt=100 A/μs
-
-
-
-
-
1.4
V
ns
μC
A
430
3.6
15
-
-
-
Qrr
Irrm
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.5A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C
2019. 05. 30
Revision No : 0
3/7
FTK11NS70P/F/D
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
25
30
Common Source
Tc = 25°C
Common Source
Tc = 25°C
VDS=20 V
VGS=15V
VGS=7V
Pulse test
25
VGS=10V
20
15
10
5
Pulse test
20
15
10
5
VGS=6V
VGS=5.5V
0
0
0
4
8
12
16
20
2
4
6
8
10
Drain−source voltage VDS (V)
Gate−source voltage VGS (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
1.1
1
1.3
1.2
1.1
1
0 9
0 8
0.7
0.6
0.9
0.8
0.7
0.6
VGS = 10V
0 5
0.4
Tc = 25°C
Pulse test
0 3
IDS=0.25 mA
Pulse test
0 2
0.5
0
5
10
15
20
25
30
-60 -40 -20
0
20
40
60
80 100 120 140 160
Drain current ID (A)
Junction temperature Tj (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
3
1 2
2.5
2
1.1
1
1.5
1
0 9
VGS=10 V
IDS=5.5 A
Pulse test
VGS=0 V
IDS=0.25 mA
Pulse test
0.5
0
0 8
-80
-40
0
40
80
120
160
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction temperature Tj (°C)
Junction temperature Tj (°C)
2019. 05. 30
Revision No : 0
4/7
FTK11NS70P/F/D
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
100000
10
10000
1000
8
VDS=120V
Ciss
VDS=480V
6
Coss
100
Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
4
Crss = Cgd
10
2
Notes:
f = 1 MHz
1
ID = 5.5A
VGS=0 V
0
0.1
0
5
10
15
20
25
30
0.1
1
10
100
Total Gate Charge QG (nC)
Drain Source Voltage VDS (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Power Dissipation vs. Temperature
100
40
35
30
25
20
15
10
5
Limited by RDS(on)
10us
100us
10
1ms
1
DC
Notes:
Tc = 25°C
0.1
Tj = 150°C
Single Pulse
0
0.01
0
40
80
120
160
1
10
100
1000
Drain-Source Voltage VDS (V)
Case temperature Tc (°C)
Figure 11. Transient Thermal Response Curve
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
In descending order
D=0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
DM
t
Duty = t/T
T
Z
(t)=3 8°C/W Max.
θJC
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
Pulse Width t (s)
2019. 05. 30
Revision No : 0
5/7
FTK11NS70P/F/D
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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Revision No : 0
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FTK11NS70P/F/D
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2019. 05. 30
Revision No : 0
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