FTK65T540P [FS]
N-Channel Super Junction Power MOSFET;
| 型号： | FTK65T540P |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | N-Channel Super Junction Power MOSFET |
| 文件： | 总8页 (文件大小：1096K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK65T540DD/F/P
TECHNICAL DATA
N-ChannelSuper Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
460
8
V
mΩ
A
RDS(ON)TYP
ID
Features
● New technology for high voltage device
● Low on-resistance and low conduction losses
● Small package
● Ultra Low Gate Charge cause lower driving requirements
● 100% Avalanche Tested
● ROHS compliant
Application
●
●
●
Power factor correction（PFC）
Schematic diagram
Switched mode power supplies(SMPS)
Uninterruptible Power Supply（UPS）
Package Marking And Ordering Information
Device
Device Package
TO- 263
Marking
65T540D
65T540
FTK65T540DD
FTK65T540P
FTK65T540F
TO- 220
TO- 220F
65T540F
TO-263
TO-220F
TO-220
Table 1. Absolute Maximum Ratings (TC=25°C)
FTK65T540DD
FTK65T540P
Parameter
Symbol
Unit
FTK65T540F
650
V
V
Drain- Source Voltage (VGS=0V）
VDS
VGS
±30
Gate- Source Voltage (VDS=0V) AC (f>1 Hz)
ContinuousDrain Current at Tc=25℃
ContinuousDrain Current at Tc=100℃
8
8*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
5.2
24
5.2*
24*
A
A
(Note 1)
Pulsed drain current
Maximum Power Dissipation (Tc=25℃)
Derate above 25℃
69
31.6
0.25
W
0.55
W/°C
mJ
A
156
1.7
EAS
IAR
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.3
EAR
mJ
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FTK65T540DD/F/P
Parameter
Symbol
dv/dt
Value
50
Unit
V/ns
V/ns
°C
Drain Source voltage slope, VDS ≤ 480 V,
Reverse diode dv/dt，VDS ≤ 480 V,ISD<ID
15
dv/dt
Operating Junction and Storage Temperature Range
-55...+150
TJ,TSTG
* limited by maximum junction temperature
Table 2. Thermal Characteristic
FTK65T540DD
Parameter
Symbol
Unit
FTK65T540F
FTK65T540
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJC
RthJA
1.81
62
3.95
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (Tc=25°C)
Zero Gate Voltage Drain Current (Tc=125°C)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4.0A
650
V
μA
μA
nA
V
1
IDSS
100
±100
IGSS
VGS(th)
RDS(ON)
3
4
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
460
540
mΩ
Clss
Coss
Crss
Qg
590
37
pF
pF
pF
nC
nC
nC
VDS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
0.9
14.6
4
VDS=480V,ID=8A,
Gate-Source Charge
Qgs
Qgd
VGS=10V
Gate-Drain Charge
6.7
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
8
6
nS
nS
nS
nS
Turn-on Rise Time
V
DD=380V,ID=4.0A,
RG=4.7Ω,VGS=10V
Turn-Off Delay Time
59
10
75
15
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
8
A
A
TC=25°C
32
1.2
Tj=25°C,ISD=8A,VGS=0V
0.9
230
1.2
V
Reverse Recovery Time
nS
uC
A
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Tj=25°C,IF=4.0A,di/dt=100A/μs
Irrm
10.5
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25°C,VDD=50V,VG=10V, R =25Ω
G
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FTK65T680DD/F/P
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
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FTK65T680DD/F/P
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Capacitance
Figure11. Gate charge waveforms
Figure12.Transient Thermal Impedance
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FTK65T680DD/F/P
Figure13. Transient Thermal Impedance for TO-220F
Test circuit
1
Gate charge test circuit & Waveform
2）Switch Time Test Circu：it
3）Unclamped Inductive Switching Test Circuit & Waveforms
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FTK65T680DD/F/P
TO-263-3L Package Information
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
4.32
-
Max.
4.57
0.25
0.94
1.40
0.61
1.40
9.40
8.23
10.28
8.08
Min.
Max.
A
A1
b
0.170
0.180
0.010
0.037
0.055
0.024
0.055
0.370
0.324
0.405
0.318
0.71
1.15
0.46
1.22
8.89
8.01
10.04
7.88
0.028
0.045
0.018
0.048
0.350
0.315
0.395
0.310
b2
c
c2
D
D1
E
E1
e
2.54 BSC
0.100 BSC
L
14.73
2.29
1.15
1.27
15.75
2.79
1.39
1.77
0.580
0.090
0.045
0.050
0.620
0.110
0.055
0.070
L1
L2
L3
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FTK65T680DD/F/P
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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FTK65T680DD/F/P
TO-220F Package Information
Symbol
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Max.
4.900
2.740
2.960
0.900
1.580
0.600
10.360
15.970
6.900
16.100
Max.
0.193
0.108
0.117
0.035
0.062
0.024
0.408
0.629
0.272
0.634
A
A1
A2
b1
b2
c
4.500
2.340
2.560
0.700
1.180
0.400
9.960
15.670
6.500
15.500
0.177
0.092
0.101
0.028
0.046
0.016
0.392
0.617
0.256
0.610
D
E
E1
E2
e
2.540 TYP
0.100 TYP
Φ
3.080
12.640
3.030
3.280
13.240
3.430
0.121
0.498
0.119
0.129
0.521
0.135
L
L1
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