FTK7N60F [FS]
7.0 Amps, 600 Volts N-CHANNEL MOSFET;
| 型号： | FTK7N60F |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 7.0 Amps, 600 Volts N-CHANNEL MOSFET |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK7N60P / F / DD
TECHNICAL DATA
Power MOSFET
7.0 Amps, 600 Volts
N-CHANNEL MOSFET
P :
1
DESCRIPTION
TO-220
The FTK 7N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
F :
1
TO-220F
FEATURES
* RDS(ON) = 1.2Ω@VGS = 10V
* Low gate and reverse transfer Capacitance ( C: 10 pF typical )
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK7N60P
FTK7N60F
FTK7N60DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2010. 05. 18
Revision No : 1
1/6
FTK7N60P / F / DD
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
600
±30
7.0
7.0
4.2
28
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 1)
A
TC = 25°C
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
IDM
EAS
A
Single Pulse(Note 2)
230
14.7
4.5
mJ
mJ
Repetitive Limited by TJ(MAX)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
V/ns
W
TC = 25°C
142 / 48
1.14 / 0.38
+150
Power Dissipation (TO-220,TO-263/ TO-220F)
PD
Derate above 25°C
W / ˚C
TJ
Junction Temperature
˚C
˚C
TSTG
-55 ~ +150
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
62.5
UNIT
θJA
TO-220, TO-263
TO-220F
θJc
θJc
˚C / W
0.88
2.6
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
600
1
µA
µA
Drain-Source Leakage Current
Gate-Body Leakage Current
10
IGSSF
IGSSR
VGS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
VGS = -30V, VDS = 0V
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5A
2.0
4.0
1.2
V
Ω
S
Static Drain-Source On-Resistance
1.0
6.4
VDS = 50V, ID = 3.5A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1000
100
10
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
20
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
VDD = 300V, ID = 7A, RG = 25Ω
(Note 4,5)
40
120
50
30
5
ns
ns
ns
QG
nC
nC
VDS = 480V,ID = 7A, VGS = 10V
(Note 4,5)
QGS
QGD
Gate-Drain Charge
10
nC
2010. 05. 18
Revision No : 1
2/6
FTK7N60P / F / DD
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
IS
VGS = 0 V, IS = 7.0 A
Drain-Source Diode Forward Voltage
1.5
7.0
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
28
A
tRR
VGS = 0 V, IS = 7.0A,
Reverse Recovery Time
400
4.0
ns
QRR
dIF/dt =100 A/µs (Note 4)
Reverse Recovery Charge
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2010. 05. 18
Revision No : 1
3/6
FTK7N60P / F / DD
Power MOSFET
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2010. 05. 18
Revision No : 1
4/6
FTK7N60P / F / DD
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2010. 05. 18
Revision No : 1
5/6
FTK7N60P / F / DD
Power MOSFET
Transfer Characteristics
On-Region Characteristics
VGS
Top: 15 0V
10 0V
101
100
10-1
101
100
8 0V
7 0V
6 5V
6 0V
Bottorm 5 5V
-55˚C
150˚C
25˚C
*Notes:
*Notes:
1. 250μs Pulse Test
2. TC=25˚C
1. VDS=50V
2. 250μs Pulse Test
10-1
10-1
101
100
2
4
6
8
10
Drain-Source Voltage , VDS(V)
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs. Drain Current
and Gate Voltage
Body Diode Forward Voltage Variation vs
Source Current and Temperature
.
2.5
2.0
101
VGS=10V
VGS=20V
1.5
1.0
0.5
100
*Notes:
25˚C 1. VGS=0V
150˚C
*Note: TJ =25˚C
2.250μs Pulse Test
10-1
0.0
0
5
10
Drain Current, ID (A)
20
25
15
0.2
0.4
1.2
0.6
0.8
1.0
Source-Drain Voltage , VSD (V)
Capacitance Characteristics
Ciss
Maximum Safe Operating Area
2000
1800
1000
800
=
Cg +Cgd
s
102
Operation in This Area
is Limited by R DS(on)
(Cds=shorted)
oss=Cds+Cgd
C
Crss=Cgd
Ciss
100μs
1ms
10ms
DC
101
100
10-1
Coss
*Notes:
1. VGS=0V
*Notes:
Crss
1. TC=25˚C
2. TJ=150˚C
3. Single Pulse
400
0
2. f = 1MHz
100
101
10-1
100
101
102
103
Drain-SourceVoltage , VDS (V)
Drain-Source Voltage , VDS (V)
2010. 05. 18
Revision No : 1
6/6
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