MB39C006AEVB-06_技术文档

FUJITSU MICROELECTRONICS

DATA SHEET

DS04-27245-2E

ASSP for Power Management Applications

1 ch DC/DC Converter IC Built-in Switching FET &

POWERGOOD function, PFM/PWM Synchronous

Rectification, and Down Conversion Support

MB39C006A

■ DESCRIPTION

The MB39C006A is a current mode type 1-channel DC/DC converter IC built-in switching FET, synchronous

rectification, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier,

PFM/PWM control circuit, reference voltage source, and POWERGOOD circuit.

External inductor and decoupling capacitor are needed only for the external component.

MB39C006A is small, achieve a highly effective DC/DC converter in the full load range, this is suitable as the

built-in power supply for handheld equipment such as mobile phone/PDA, DVDs, and HDDs.

■ FEATURES

• High efficiency

: 96% (Max)

• Low current consumption

• Output current (DC/DC)

• Input voltage range

: 30 μA (at PFM)

: 800 mA (Max)

: 2.5 V to 5.5 V

: 2.0/3.2 MHz (Typ)

• Operating frequency

• Built-in PWM operation fixed function

• No flyback diode needed

• Low dropout operation

: For 100% on duty

• Built-in high-precision reference voltage generator : 1.20 V 2%

• Consumption current in shutdown mode

: 1 μA or less

• Built-in switching FET

: P-ch MOS 0.3 Ω (Typ) N-ch MOS 0.2 Ω (Typ)

• High speed for input and load transient response in the current mode

• Over temperature protection

• Packaged in a compact package

: SON10

■ APPLICATIONS

• Flash ROMs

• MP3 players

• Electronic dictionary devices

• Surveillance cameras

• Portable GPS navigators

• Mobile phones

etc.

2009.8

MB39C006A

■ PIN ASSIGNMENT

(Top View)

VDD

10

OUT

9

MODE

VREFIN

7

FSEL

6

8

1

2

3

4

5

LX

GND

CTL

VREF

POWERGOOD

(LCC-10P-M04)

■ PIN DESCRIPTIONS

Pin No

Pin name

LX

I/O

O

⎯

I

Description

1

2

3

4

Inductor connection output pin. High impedance during shut down.

Ground pin.

GND

CTL

Control input pin. (L : Shut down / H : Normal operation)

Reference voltage output pin.

VREF

O

POWERGOOD circuit output pin. Internally connected to an N-ch MOS open

drain circuit.

5

POWERGOOD

O

Frequency switch pin.

(L (open) : 2.0 MHz, H : 3.2 MHz)

6

7

8

FSEL

VREFIN

MODE

I

Error amplifier (Error Amp) non-inverted input pin.

Operation mode switch pin.

(L : PFM/PWM mode, OPEN : PWM mode)

9

OUT

VDD

I

Output voltage feedback pin.

Power supply pin.

10

⎯

2

DS04-27245-2E

MB39C006A

■ I/O PIN EQUIVALENT CIRCUIT DIAGRAM

VDD

∗

LX

VREF

GND

VDD

GND

∗

OUT

VREFIN

∗

GND

VDD

∗

CTL

FSEL

∗

GND

VDD

POWER

GOOD

*

∗

MODE

GND

*

GND

* : ESD Protection device

DS04-27245-2E

3

MB39C006A

■ BLOCK DIAGRAM

V^IN

VDD

10

CTL

3

ON/OFF

OUT

9

×3

VDD

Error Amp

−

+

5

POWERGOOD

POWER-

GOOD

I

OUT

Comparator

VREF

4

1.20 V

V^REF

PFM/PWM

Logic

LX

V^OUT

1

VREFIN

Control

7

8

DAC

Lo : PFM/PWM

OPEN : PWM

Mode

Control

MODE

6

2

GND

FSEL

4

DS04-27245-2E

MB39C006A

• Current mode

• Original voltage mode type:

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Reference triangular wave (V^TRI)

• Current mode type:

Instead of the triangular wave (V^TRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents

that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Voltage (V^IDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular

wave generation circuit) and SW FET

Voltage mode type model

Current mode type model

VIN

Oscillator

S

Vc

Q

R

VTRI

V^IDET

SR-FF

Vc

V^TRI

V^IDET

Vc

ton

toff

ton

Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.

DS04-27245-2E

5

MB39C006A

■ FUNCTION OF EACH BLOCK

• PFM/PWM Logic control circuit

In normal operation, frequency (2.0 MHz/3.2 MHz) which is set by the built-in oscillator (square wave oscillation

circuit) controls the built-in P-ch MOS FET and N-ch MOS FET for the synchronous rectification operation. In

the light load mode, the intermittent (PFM) operation is executed.

This circuit protects against pass-through current caused by synchronous rectification and against reverse

current caused in a non-successive operation mode.

• I^OUTcomparator circuit

This circuit detects the current (I^LX) which flows to the external inductor from the built-in P-ch MOS FET.

By comparing V^IDETobtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the built-

in P-ch MOS FET is turned off via the PFM/PWM Logic Control circuit.

• Error Amp phase compensation circuit

This circuit compares the output voltage to reference voltages such as VREF. The MB39C006A has a built-in

phase compensation circuit that is designed to optimize the operation of the MB39C006A. This needs neither

to be considered nor addition of a phase compensation circuit and an external phase compensation device.

• VREF circuit

A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is

1.20 V (Typ).

• POWERGOOD circuit

The POWERGOOD circuit monitors the voltage at the OUT pin. The POWERGOOD pin is open drain output.

Use the pin with pull-up using the external resistor in the normal operation.

When the CTL is at the H level, the POWERGOOD pin becomes the H level. However, if the output voltage drops

because of over current and etc, the POWERGOOD pin becomes the L level.

Timing chart example : (POWERGOOD pin pulled up to VIN)

VIN

VUVLO

CTL

VOUT×97

%

VOUT

POWERGOOD

(pull up to VIN)

tDLYPG

t^DLYPGor less

VUVLO : UVLO threshold voltage

t^DLYPG: POWERGOOD delay time

6

DS04-27245-2E

MB39C006A

• Protection circuit

The MB39C006A has a built-in over-temperature protection circuit.

The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction

temperature reaches +135 °C. When the junction temperature drops to + 110 °C, the switching FET returns to

the normal operation.

Since the PFM/PWM control circuit of the MB39C006A is in the control method in current mode, the current

peak value is also monitored and controlled as required.

• FUNCTION TABLE

Input

Output

VREF

MODE

Switching

frequency

OUTPUT pin

voltage

CTL

L

MODE

FSEL

POWERGOOD

Function stop

Operation

Shutdown

mode

Output

stop

⎯

*

L

*

Output stop

PFM/PWM

mode

VOUT voltage

output

2.0 MHz

3.2 MHz

H

L

1.2 V

PWM fixed

mode

VOUT voltage

output

H

OPEN

L

Operation

PFM/PWM

mode

VOUT voltage

output

H

Operation

PWM fixed

mode

VOUT voltage

output

H

OPEN

Operation

* : Don't care

DS04-27245-2E

7

MB39C006A

■ ABSOLUTE MAXIMUM RATINGS

Rating

Parameter

Symbol

Condition

Unit

Min

− 0.3

⎯

Max

+ 6.0

Power supply voltage

V^DD

VDD pin

OUT pin

V

VDD + 0.3

V^DD+ 0.3

+ 6.0

Signal input voltage

V^ISIG

CTL, MODE, FSEL pins

VREFIN pin

V

POWERGOOD pull-up voltage

LX voltage

VIPG

POWERGOOD pin

LX pin

V

A

V^LX

I^PK

VDD + 0.3

1.8

LX peak current

The upper limit value of ILX

⎯

2632*^1,*^2,*³

980*^1,*^2,*⁴

1053*^1,*^2,*³

392*^1,*^2,*⁴

+ 85

Ta ≤ + 25 °C

Ta = + 85 °C

mW

⎯

Power dissipation

P^D

⎯

Operating ambient temperature

Storage temperature

Ta

⎯

− 40

− 55

°C

T^STG

+ 125

*1 : See “■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS • Power dissipation vs. Operating

ambient temperature” for the package power dissipation of Ta from + 25 °C to + 85 °C.

*2 : When mounted on a four- layer epoxy board of 11.7 cm × 8.4 cm

*3 : IC is mounted on a four-layer epoxy board, which has thermal via, and the IC's thermal pad is connected to

the epoxy board (Thermal via is 4 holes).

*4 : IC is mounted on a four-layer epoxy board, which has no thermal via, and the IC's thermal pad is connected

to the epoxy board.

Notes • The use of negative voltages below − 0.3 V to the GND pin may create parasitic transistors on LSI lines,

which can cause abnormal operation.

• This device can be damaged if the LX pin is short-circuited to VDD pin or GND pin.

• Take measures not to keep the FSEL pin falling below the GND pin potential of the MB39C006A as much as

possible.

In addition to erroneous operation, the IC may latch up and destroy itself if 110 mA or more current flows

from this pin.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

8

DS04-27245-2E

MB39C006A

■ RECOMMENDED OPERATING CONDITIONS

Value

Unit

Parameter

Symbol

Condition

Min

2.5

0.15

0

Typ

3.7

⎯

Max

5.5

1.20

5.0

800

1

Power supply voltage

VREFIN voltage

CTL voltage

V^DD

V^REFIN

V^CTL

I^LX

⎯

V

⎯

V

LX current

⎯

mA

POWERGOOD current

I^PG

⎯

2.5 V ≤ VDD ≤ 3.0 V

3.0 V ≤ V^DD≤ 5.5 V

f^OSC1= 2.0 MHz (FSEL = L)

f^OSC2= 3.2 MHz (FSEL = H)

⎯

0.5

1

VREF output current

Inductor value

I^ROUT

mA

⎯

2.2

1.5

⎯

L

μH

⎯

Note : Theoutputcurrentfromthisdevicehasasituationtodecreaseifthepowersupplyvoltage(VIN)andtheDC/DC

converter output voltage (V^OUT) differ only by a small amount. This is a result of slope compensation and will

not damage this device.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of

the semiconductor device. All of the device's electrical characteristics are warranted when the

device is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

on the data sheet. Users considering application outside the listed conditions are advised to contact

their representatives beforehand.

DS04-27245-2E

9

MB39C006A

■ ELECTRICAL CHARACTERISTICS

(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)

Value

No.

Parameter

Symbol

Condition

Unit

Min

−100

Typ

0

Max

I^REFINM

I^REFINL

I^REFINH

VREFIN = 0.833 V

+ 100

nA

Input current

7

9

VREFIN = 0.15 V

VREFIN = 1.20 V

0

V^REFIN= 0.833 V,

OUT = −100 mA

2.5 V ≤ V^DD≤ 5.5 V *¹

Output voltage

Input stability

Load stability

V^OUT

LINE

LOAD

2.45

⎯

2.50

10

2.55

⎯

V

mV

− 100 mA ≥ OUT ≥

− 800 mA

⎯

10

⎯

Out pin input

impedance

R^OUT

I^PK

OUT = 2.0 V

0.6

0.9

⎯

1.0

1.2

30

1.5

1.7

⎯

MΩ

A

LX peak current

Output shorted to GND

FSEL = 0 V, L = 2.2 μH

DC/DC

PFM/PWM switch

I^MSW

mA

converter current

block

1

f^OSC1

f^OSC2

FSEL = 0 V

1.6

2.0

2.4

MHz

Oscillation

frequency

FSEL = 3.7 V

2.56

3.20

3.84

C1 = 4.7 μF, OUT = 0 A,

VOUT = 90%

Rise delay time

t^PG

3, 9

⎯

45

80

⎯

μs

mV

Ω

SW NMOS FET

OFF voltage

V^NOFF

R^ONP

R^ONN

⎯

−20*

0.30

0.20

SW PMOS FET

ON resistance

LX = −100 mA

0.47

1

SW NMOS FET

ON resistance

LX = −100 mA

0 ≤ LX ≤ VDD*²

VDD = 5.5 V, 0 ≤ LX ≤ VDD*²−2.0

⎯

0.36

Ω

I^LEAKM

I^LEAKH

T^OTPH

−1.0

⎯

+ 8.0

μA

LX leak current

+ 16.0 μA

Over temperature

protection

(Junction Temp.)

+ 120* + 135* + 155*

+ 95* + 110* + 130*

°C

⎯

T^OTPL

Protection

circuit block

V^THH

V^THL

2.07

1.92

2.20

2.05

2.33

2.18

V

UVLO threshold

voltage

⎯

10

UVLO hysteresis

width

V^HYS

0.08

0.15

0.25

V

* : This value isn't be specified. This should be used as a reference to support designing the circuits.

(Continued)

10

DS04-27245-2E

MB39C006A

(Continued)

(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)

Value

Typ

No.

Parameter

POWERGOOD

Symbol

Condition

Unit

Min

Max

V^REFIN

× 3

V^REFIN

× 3

V^REFIN

× 3

V^THPG

*3

V

threshold voltage

× 0.93 × 0.97 × 0.99

t^DLYPG1

t^DLYPG2

FSEL = 0 V

FSEL = 3.7 V

⎯

250

⎯

μs

POWERGOOD

delay time

POWER-

GOOD

block

5

3

170

POWERGOOD

output voltage

V^OL

I^OH

POWERGOOD = 250 μA

POWERGOOD = 5.5 V

⎯

0.1

V

POWERGOOD

output current

1.0

μA

V^THHCT

V^THLCT

⎯

0.55

0.40

0.95

0.80

1.45

1.30

V

CTL threshold

voltage

CTL pin

input current

I^ICTL

CTL = 3.7 V

⎯

1.0

μA

V^THMMD

V^THLMD

OPEN setting

⎯

1.5

⎯

0.4

V

Control

block

MODE threshold

voltage

⎯

8

6

4

MODE pin input

current

I^LMD

MODE = 0 V

− 0.8

− 0.4

⎯

μA

V^THHFS

V^THLFS

⎯

2.96

⎯

0.74

V

FSEL threshold

voltage

⎯

VREF = −2.7 μA,

OUT = −100 mA

VREF voltage

V^REF

1.176

1.200

1.224

20

V

Reference

voltage

block

VREF load

stability

L^OADREF

VREF = −1.0 mA

⎯

mV

CTL = 0 V,

Shut down

power supply

current

I^VDD1

⎯

1.0

μA

All circuits in OFF state

I^VDD1H

CTL = 0 V, VDD = 5.5 V

Power supply

current at

DC/DC operation

(PFM mode)

CTL = 3.7 V,

MODE = 0 V,

OUT = 0 A

I^VDD2

⎯

30

48

μA

General

10

Power supply

current at

DC/DC operation

(PWM fixed

mode)

CTL = 3.7 V,

MODE = OPEN,

OUT = 0 A,

I^VDD2

⎯

4.8

8.0

mA

FSEL = 0 V

Power-on

invalid current

CTL = 3.7 V,

I^VDD

800

1500

μA

VOUT = 90%*⁴

*1 : The minimum value of V^DDis the 2.5 V or VOUT setting value + 0.6 V, whichever is higher.

*2 : The + leak at the LX pin includes the current of the internal circuit.

*3 : Detected with respect to the output voltage setting value of V^REFIN

*4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive current

is not included because the device is in full ON state (no switching operation). Also the load current is not

included.

DS04-27245-2E

11

MB39C006A

■ TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS

VDD

MB39C006A

VDD

SW

VIN

CTL

3

10

VDD

C2

4.7 µF

R5

1 MΩ

L1

1.5 µH/2.2 µH

8

4

MODE

1

9

VOUT

GND

LX

OUT

VREF

FSEL

I^OUT

C1

4.7 µF

R3-1

R1

7.5 kΩ

SW

1 MΩ

POWER-

GOOD

5

2

6

7

R3-2

120 kΩ

GND

VREFIN

R4

300 kΩ

C6

0.1 µF

VOUT = VREFIN × 2.97

Component

Specification

Vendor

Part Number

Remark

R1

1 MΩ

KOA

RK73G1JTTD D 1 MΩ

R3-1

R3-2

7.5 kΩ

120 kΩ

SSM

RR0816-752-D

RR0816-124-D

At VOUT = 2.5 V setting

R4

R5

C1

C2

300 kΩ

1 MΩ

SSM

KOA

TDK

RR0816-304-D

RK73G1JTTD D 1 MΩ

C2012JB1A475K

4.7 μF

For adjusting slow start

time

C6

L1

0.1 μF

TDK

C1608JB1H104K

2.2 μH

1.5 μH

TDK

VLF4012AT-2R2M

VLF4012AT-1R5M

2.0 MHz operation

3.2 MHz operation

Note : These components are recommended based on the operating tests authorized.

TDK : TDK Corporation

SSM : SUSUMU Co., Ltd

KOA : KOA Corporation

12

DS04-27245-2E

MB39C006A

■ APPLICATION NOTES

[1] Selection of components

• Selection of an external inductor

Basically it dose not need to design inductor. The MB39C006A is designed to operate efficiently with a 2.2 μH

(2.0 MHz operation) or 1.5 μH (3.2 MHz operation) external inductor.

The inductor should be rated for a saturation current higher than the LX peak current value during normal

operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)

The LX peak current value I^PKis obtained by the following formula.

V^IN− VOUT

D

1

2

(V^IN− VOUT) × VOUT

2 × L × fosc × VIN

I^PK= IOUT +

×

= IOUT +

L

fosc

L

: External inductor value

I^OUT: Load current

V^IN

: Power supply voltage

V^OUT: Output setting voltage

D

: ON- duty to be switched( = V^OUT/VIN)

fosc : Switching frequency (2.0 MHz or 3.2 MHz)

ex) At V^IN= 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 μH, fosc = 2.0 MHz

The maximum peak current value I^PK;

(V^IN− VOUT) × VOUT

(3.7 V − 2.5 V) × 2.5 V

2 × 2.2 μH × 2.0 MHz × 3.7 V

IPK = IOUT +

= 0.8 A +

=: 0.89 A

2 × L × fosc × V^IN

• I/O capacitor selection

• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple

currents.

• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor

current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal

to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on

the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELEC-

TRONICS generally recommends a 4.7 μF capacitor, or a larger capacitor value can be used if ripple voltages

are not suitable. If the V^IN/VOUT voltage difference is within 0.6 V, the use of a 10 μF output capacitor value is

recommended.

• Types of capacitors

Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,

power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating

( − 80% to + 20%). FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating

(

10% to 20%).

Normal electrolytic capacitors are not recommended due to their high ESR.

Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when

damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type

with an internal fuse.

DS04-27245-2E

13

MB39C006A

[2] Output voltage setting

The output voltage V^OUTof the MB39C006A is defined by the voltage input to VREFIN. Supply the voltage for

inputting to VREFIN from an external power supply, or set the VREF output by dividing it with resistors.

The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in the

following formula.

R4

V^OUT= 2.97 × VREFIN,

(V^REF= 1.20 V)

VREFIN =

× VREF

R3 + R4

MB39C006A

VREF

4

7

R3

R4

VREFIN

Note : See “■ APPLICATIN CIRCUIT EXAMPLES” for an example of this circuit.

Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value

so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .

[3] About conversion efficiency

The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.

The total loss (P^LOSS) of the DC/DC converter is roughly divided as follows :

P^LOSS= PCONT + PSW + PC

PCONT

: Control system circuit loss (The power to operate the MB39C006A, including the gate driving

power for internal SW FETs)

P^SW

P^C

: Switching loss (The loss caused during the switch of the IC's internal SW FETs)

: Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external

circuits )

The IC's control circuit loss (P^CONT) is extremely small, several tens of mW* with no load.

As the IC contains FETs which can switch faster with less power, the continuity loss (P^C) is more predominant

as the loss during heavy-load operation than the control circuit loss (P^CONT) and switching loss (PSW) .

* : The loss in the successive operation mode. This IC suppresses the loss in order to execute the PFM operation

in the low load mode (less than 100 μA in no load mode). Mode is changed by the current peak value I^PKwhich

flows into switching FET. The threshold value is about 30 mA.

14

DS04-27245-2E

MB39C006A

Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by

external inductor series resistance.

2

P^C= IOUT × (RDC + D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

: Internal P-ch SW FET ON resistance

: Internal N-ch SW FET ON resistance

: External inductor series resistance

: Load current

R^ONP

R^ONN

RDC

I^OUT

The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by

selecting components.

[4] Power dissipation and heat considerations

The IC is so efficient that no consideration is required in most of the cases. However, if the IC is used at a low

power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for

higher efficiency.

The internal loss (P) is roughly obtained from the following formula :

2

P = I^OUT× (D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

: Internal P-ch SW FET ON resistance

: Internal N-ch SW FET ON resistance

: Output current

R^ONP

R^ONN

I^OUT

The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss

and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored.

In the MB39C006A with R^ONPgreater than RONN, the larger the on-duty cycle, the greater the loss.

When assuming V^IN= 3.7 V, Ta = + 70 °C for example, RONP = 0.42 Ω and RONN = 0.36 Ω according to the graph

“MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 144 mW at V^OUT= 2.5

V and I^OUT= 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”, the power

dissipation at an operating ambient temperature Ta of + 70 °C is 539 mW and the internal loss is smaller than

the power dissipation.

DS04-27245-2E

15

MB39C006A

[5] Transient response

Normally, I^OUTis suddenly changed while VIN and VOUT are maintained constant, responsiveness including the

response time and overshoot/undershoot voltage is checked. As the MB39C006A has built-in Error Amp with

an optimized design, it shows good transient response characteristics. However, if ringing upon sudden change

of the load is high due to the operating conditions, add capacitor C6 (e.g. 0.1 μF). (Since this capacitor C6

changes the start time, check the start waveform as well.) This action is not required for DAC input.

MB39C006A

VREF

4

7

VREF

R3

VREFIN

C6

R4

[6] Board layout, design example

The board layout needs to be designed to ensure the stable operation of the MB39C006A.

Follow the procedure below for designing the layout.

• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a through hole

(TH) near the pins of this capacitor if the board has planes for power and GND.

• Large AC currents flow between the MB39C006A and the input capacitor (Cin), output capacitor (C^O), and

external inductor (L). Group these components as close as possible to the MB39C006A to reduce the overall

loop area occupied by this group. Also try to mount these components on the same surface and arrange

wiring without through hole wiring. Use thick, short, and straight routes to wire the net (The layout by planes

is recommended.).

• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor

(C^O). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of the MB39C006A

as far as possible.

• If applying voltage to the VREFIN pin through dividing resistors, arrange the resistors so that the wiring can

be kept as short as possible. Also arrange them so that the GND pin of the VREFIN resistor is close to the

IC's GND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via

a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close to the VREFIN pin.

• Try to make a GND plane on the surface to which the MB39C006A will be mounted. For efficient heat dissipation

when using the SON 10 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in

the footprint of the thermal pad.

Layout Example of IC SW components

1 Pin

VIN

GND

Co

Vo

Cin

L

Feedback line

16

DS04-27245-2E

MB39C006A

• Notes for Circuit Design

• The switching operation of the MB39C006A works by monitoring and controlling the peak current which,

incidentally, serves as form of short-circuit protection. However, do not leave the output short-circuited for long

periods of time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the

inductor) tends to rise. Leaving in the short-circuit state, the temperature of the MB39C006A will continue

rising and activate the thermal protection.

Once the thermal protection stops the output, the temperature of the IC will go down and operation will resume,

after which the output will repeat the starting and stopping.

Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the

peripherals surrounding it.

DS04-27245-2E

17

MB39C006A

■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS

(Shown below is an example of characteristics for connection according to“■ TEST CIRCUIT FOR MEASURING

TYPICAL OPERATING CHARACTERISTICS”.)

Conversion efficiency vs. Load current

(2.0 MHz:PFM/PWM mode)

Conversion efficiency vs. Load current

(2.0 MHz:PFM/PWM mode)

100

90

80

70

60

50

100

90

80

70

60

50

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 4.2 V

Ta = +25°C

OUT = 1.2 V

FSEL = L

Ta = +25°C

OUT = 2.5 V

FSEL = L

V

IN = 5.0V

MODE = L

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(2.0 MHz:PFM/PWM mode)

Conversion efficiency vs. Load current

(2.0 MHz:PFM/PWM mode)

100

90

80

70

60

50

V

IN = 3.7 V

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

Ta = +25°C

OUT = 1.8 V

FSEL = L

V

OUT = 3.3 V

V

FSEL = L

MODE = L

V

IN = 5.0 V

MODE = L

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

(Continued)

18

DS04-27245-2E

MB39C006A

Conversion efficiency vs. Load current

(2.0 MHz:PWM fixed mode)

Conversion efficiency vs. Load current

(2.0 MHz:PWM fixed mode)

100

90

80

70

60

50

40

30

20

10

0

100

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0V

Ta = +25°C

OUT = 1.2 V

V

OUT = 2.5 V

V

FSEL = L

MODE = OPEN

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(2.0 MHz:PWM fixed mode)

Conversion efficiency vs. Load current

(2.0 MHz:PWM fixed mode)

100

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

OUT = 3.3 V

Ta = +25°C

OUT = 1.8 V

V

FSEL = L

MODE = OPEN

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

(Continued)

DS04-27245-2E

19

MB39C006A

Conversion efficiency vs. Load current

(3.2 MHz: PFM/PWM mode)

Conversion efficiency vs. Load current

(3.2 MHz: PFM/PWM mode)

100

90

80

70

60

50

100

90

80

70

60

50

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 4.2 V

Ta = +25°C

OUT = 2.5 V

Ta = +25°C

VOUT = 1.2 V

V

IN = 5.0 V

V

FSEL = H

MODE = L

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(3.2 MHz:PFM/PWM mode)

Conversion efficiency vs. Load current

(3.2 MHz:PFM/PWM mode)

100

90

80

70

60

50

40

30

20

10

0

100

90

80

70

60

50

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

Ta = +25°C

OUT = 1.8 V

V

OUT = 3.3 V

V

IN = 5.0 V

10

FSEL = H

MODE = L

1

10

100

1000

1

100

1000

Load current IOUT (mA)

(Continued)

20

DS04-27245-2E

MB39C006A

Conversion efficiency vs. Load current

(3.2 MHz:PWM fixed mode)

Conversion efficiency vs. Load current

(3.2 MHz:PWM fixed mode)

100

90

80

70

60

50

40

30

20

10

0

100

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

OUT = 2.5 V

Ta = +25°C

OUT = 1.2 V

V

FSEL = H

MODE = OPEN

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(3.2 MHz:PWM fixed mode)

Conversion efficiency vs. Load current

(3.2 MHz:PWM fixed mode)

100

90

80

70

60

50

40

30

20

10

0

100

90

80

70

60

50

40

30

20

10

0

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 4.2 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

OUT = 3.3 V

Ta = +25°C

OUT = 1.8 V

V

FSEL = H

MODE = OPEN

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

(Continued)

DS04-27245-2E

21

MB39C006A

Output voltage vs. Input voltage

(2.0 MHz: PFM/PWM mode)

Output voltage vs. Input voltage

(3.2 MHz: PFM/PWM mode)

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

OUT = 0 A

Ta = +25°C

V

OUT = 2.5 V

V

OUT = 2.5 V

OUT = -100 mA

FSEL = H

FSEL = L

MODE = L

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

Output voltage vs. Input voltage

(3.2 MHz: PWM fixed mode)

Output voltage vs. Input voltage

(2.0 MHz: PWM fixed mode)

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

OUT = 0 A

Ta = +25°C

V

OUT = 2.5 V

V

OUT = 2.5 V

FSEL = H

FSEL = L

OUT = -100 mA

MODE = OPEN

OUT = -100 mA

MODE = OPEN

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

(Continued)

22

DS04-27245-2E

MB39C006A

Output voltage vs. Load current

(2.0 MHz)

Output voltage vs. Load current

(3.2 MHz)

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

PFM/PWM mode

PWM fixed mode

Ta = +25°C

PWM fixed mode

Ta = +25°C

V

IN = 3.7 V

V

IN = 3.7 V

OUT = 2.5 V

FSEL = H

FSEL = L

0

200

400

600

800

0

200

400

600

800

Load current IOUT (mA)

Reference voltage vs.

Operating ambient temperature

(2.0 MHz: PFM/PWM mode)

Reference voltage vs. Input voltage

(2.0 MHz: PFM/PWM mode)

1.30

1.28

1.26

1.24

1.22

1.20

1.18

1.16

1.14

1.12

1.10

1.30

1.28

1.26

1.24

1.22

1.20

1.18

1.16

1.14

1.12

1.10

V

IN = 3.7 V

OUT = 2.5 V

OUT = 0 A

FSEL = L

MODE = L

OUT = 0 A

Ta = +25°C

OUT = -100 mA

V

OUT = 2.5 V

FSEL = L

MODE = L

-50

0

+50

+100

2.0

3.0

4.0

5.0

6.0

Operating ambient temperature Ta ( °C)

Input voltage VIN (V)

(Continued)

DS04-27245-2E

23

MB39C006A

Input current vs. Input voltage

(PWM fixed mode)

Input current vs. Input voltage

(PFM/PWM mode)

50

45

40

35

30

25

20

15

10

5

10

9

8

7

6

5

4

3

2

1

0

Ta = +25°C

OUT = 2.5 V

Ta = +25°C

V

OUT = 2.5 V

MODE = L

MODE = OPEN

0

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage V^IN(V)

Input voltage VIN (V)

Input current vs.

Operating ambient temperature

(PWM fixed mode)

Input current vs.

Operating ambient temperature

(PFM/PWM mode)

50

45

40

35

30

25

20

15

10

5

10

9

8

7

6

5

4

3

2

1

0

V

IN = 3.7 V

V

IN = 3.7 V

OUT = 2.5 V

MODE = L

MODE = OPEN

0

-50

0

+50

+100

-50

0

+50

+100

Operating ambient temperature Ta ( °C)

(Continued)

24

DS04-27245-2E

MB39C006A

Oscillation frequency vs. Input voltage

(3.2 MHz)

Oscillation frequency vs. Input voltage

(2.0 MHz)

2.4

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

3.6

3.4

3.2

3.0

2.8

2.6

2.4

Ta = +25°C

OUT = 1.8 V

V

OUT = 1.8 V

V

OUT = -200 mA

FSEL = L

FSEL = H

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

Oscillation frequency vs.

Operating ambient temperature

(2.0 MHz)

Operating ambient temperature

(3.2 MHz)

2.4

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

3.6

V

IN = 3.7 V

V

IN = 3.7 V

OUT = 2.5 V

3.4

3.2

3.0

2.8

2.6

2.4

OUT = -200 mA

FSEL = L

FSEL = H

-50

0

+50

+100

-50

0

+50

+100

Operating ambient temperature Ta ( °C)

(Continued)

DS04-27245-2E

25

MB39C006A

MOS FET

P-ch MOS FET

ON resistance vs. Input voltage

ON resistance vs. Operating ambient temperature

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

VIN = 3.7 V

0.5

0.4

0.3

0.2

0.1

0.0

P-ch

V

IN = 5.5 V

N-ch

Ta = +25°C

−

50

0

+50

+100

2.0

3.0

4.0

5.0

6.0

Operating ambient temperature Ta ( °C)

Input voltage VIN (V)

N-ch MOS FET

ON resistance vs. Operating ambient temperature

0.6

0.5

VIN = 3.7 V

0.4

0.3

0.2

V^IN= 5.5 V

0.1

0.0

−

50

0

+50

+100

Operating ambient temperature Ta ( °C)

(Continued)

26

DS04-27245-2E

MB39C006A

(Continued)

MODE VTH vs. Input voltage

CTL V^THvs. Input voltage

4.0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

V

THHCT

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V

THLCT

V

THMMD

Ta = +25°C

V

OUT = 2.5 V

VTHHCT: circuit OFF → ON

V^THLCT: circuit ON → OFF

Ta = +25°C

V

THLMD

V

OUT = 2.5 V

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

Power dissipation vs.

Operating ambient temperature

(with thermal via)

Operating ambient temperature

(without thermal via)

3000

2500

2000

1500

1000

500

3000

2500

2000

1500

1000

500

2632

1053

980

392

0

85

−50

0

+50

+100

−50

0

+50

+100

Operating ambient temperature Ta ( °C)

DS04-27245-2E

27

MB39C006A

• Switching waveforms

• PFM/PWM operation

1 μs/div

V

OUT :

20 mV/div (AC)

1

V

LX : 2.0 V/div

2

I

LX : 500 mA/div

4

VIN = 3.7 V, IOUT = −20 mA, VOUT = 2.5 V, MODE = L, Ta = +25 °C

• PWM operation

1 μs/div

V

OUT:

20 mV/div (AC)

1

VLX : 2.0 V/div

2

I

LX : 500 mA/div

4

V

IN = 3.7 V, IOUT = −800 mA, VOUT = 2.5 V, MODE = L, Ta = +25 °C

28

DS04-27245-2E

MB39C006A

• Output waveforms at sudden load changes (0 A

− 800 mA)

↔

100 μs/div

V

OUT :

200 mV/div

1

V

LX : 2.0 V/div

2

4

−800 mA

I

OUT : 1 A/div

0 A

V

IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C

• Output waveforms at sudden load changes ( − 20 mA

− 800 mA)

↔

100 μs/div

V

OUT :

200 mV/div

1

V

LX : 2.0 V/div

2

−800 mA

I

OUT : 1 A/div

4

− 20 mA

V

IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C

• Output waveforms at sudden load changes ( − 100 mA ↔ − 800 mA)

100 μs/div

V

OUT :

200 mV/div

1

V

LX : 2.0 V/div

2

−800 mA

I

OUT : 1 A/div

4

− 100 mA

IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C

V

DS04-27245-2E

29

MB39C006A

• CTL start-up waveform

(No load, No VREFIN capacitor)

(Maximum load, No VREFIN capacitor)

10 μs/div

CTL : 5 V/div

3

V

OUT : 1 V/div

V

OUT : 1 V/div

1

V

LX : 5 V/div

VLX : 5 V/div

2

4

2

4

ILX :1 A/div

V

IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,

V

IN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 °C

MODE = L, Ta = +25 °C

(No load, VREFIN capacitor = 0.1 μF)

(Maximum load, VREFIN capacitor = 0.1 μF)

10 ms/div

CTL : 5 V/div

3

V

OUT : 1 V/div

V

OUT : 1 V/div

1

V

LX : 5 V/div

V

LX : 5 V/div

2

4

2

4

ILX :1 A/div

V

IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,

V

IN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 °C

MODE = L, Ta = +25 °C

30

DS04-27245-2E

MB39C006A

• CTL stop waveform (No load, VREFIN capacitor = 0.1 μF)

10 μs/div

CTL : 5 V/div

3

V

OUT : 1 V/div

1

V

LX : 5 V/div

2

4

ILX :1 A/div

V

IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,

MODE = L, Ta = +25 °C

• Current limitation waveform

2.5 V

OUT : 1 V/div

10 μs/div

V

1.5 V

POWERGOOD : 1 V/div

1

2

4

1.2 A

lLX : 1 A/div

600 mA

Current limitation

operation

IOUT = −1.2 A (2.1 Ω) VOUT = 2.5 V, MODE = L,Ta = +25 °C

Normal operation

V

IN = 3.7 V, IOUT = −600 mA (4.2 Ω)

DS04-27245-2E

31

MB39C006A

• Waveform of dynamic output voltage transition (VO1 1.8 V ↔ 2.5 V)

VOUT : 200 mV/div

2.5 V

10 μs/div

1.8 V

1

840 mV

V^VRFFIN: 200 mV/div

3

610 mV

VIN = 3.7 V, IO1 = −800 mA, −576 mA (3.125 Ω), MODE = L, Ta = +25 °C, No VREFIN Capacitor

32

DS04-27245-2E

MB39C006A

■ APPLICATION CIRCUIT EXAMPLES

• APPLICATION CIRCUIT EXAMPLE 1

• An external voltage is input to the reference voltage external input (VREFIN) , and the V^OUTvoltage is set to

2.97 times as much as the V^OUTsetting gain.

C2

4.7 μF

VIN

10

VDD

V

OUT

CPU

CTL

LX

1

3

8

R5

1 MΩ

L1

2.2 μH

C1

4.7 μF

OUT

9

5

L=PFM/PWM mode

OPEN=PWM fixed mode

MODE

POWER-

GOOD

APLI

L (OPEN) = 2.0 MHz

H = 3.2 MHz

6

4

FSEL

VREF

V

OUT = 2.97 × VREFIN

VREFIN

7

DAC

GND

2

• APPLICATION CIRCUIT EXAMPLE 2

• The voltage of VREF pin is input to the reference voltage external input (VREFIN) by the dividing resistors.

The V^OUTvoltage is set to 2.5 V.

C2

4.7 μF

VIN

10

VDD

VOUT

3

CPU

1

CTL

LX

R5

1 MΩ

L1

2.2 μH

C1

4.7 μF

OUT

9

5

L=PFM/PWM mode

OPEN=PWM fixed mode

8

6

MODE

FSEL

POWER-

GOOD

APLI

L (OPEN) = 2.0 MHz

H = 3.2 MHz

R3 127.5 kΩ

R3(120 kΩ + 7.5 kΩ)

VOUT = 2.97 × VREFIN

4

7

VREF

R4

R3 + R4

V^REFIN=

× VREF

VREFIN

(V^REF= 1.20 V)

R4

300 kΩ

GND

2

300 kΩ

127.5 kΩ + 300 kΩ

VOUT = 2.97 ×

× 1.20 V = 2.5 V

DS04-27245-2E

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MB39C006A

• Application Circuit Example Components List

Component

Item

Part Number

VLF4012AT-2R2M

MIPW3226D2R2M

Specification

2.2 μH, RDC = 76 mΩ

2.2 μH, RDC = 100 mΩ

Package

SMD

Vendor

TDK

L1

Inductor

SMD

FDK

Ceramic

capacitor

C1

C2

R3

C2012JB1A475K

4.7 μF (10 V)

2012

TDK

KOA

Ceramic

capacitor

C2012JB1A475K

4.7 μF (10 V)

7.5 kΩ

RK73G1JTTD D 7.5 kΩ

RK73G1JTTD D 120 kΩ 120 kΩ

1608

Resistor

R4

R5

Resistor

RK73G1JTTD D 300 kΩ 300 kΩ

1608

KOA

RK73G1JTTD D

1 MΩ 0.5%

TDK : TDK Corporation

FDK : FDK Corporation

KOA : KOA Corporation

34

DS04-27245-2E

MB39C006A

■ USAGE PRECAUTIONS

1. Do not configure the IC over the maximum ratings

If the lC is used over the maximum ratings, the LSl may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of

these conditions can adversely affect reliability of the LSI.

2. Use the devices within recommended operating conditions

The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common

impedance

4. Take appropriate static electricity measures.

• Containers for semiconductor materials should have anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

5. Do not apply negative voltages.

The use of negative voltages below − 0.3 V may create parasitic transistors on LSI lines, which can cause

abnormal operation.

■ ORDERING INFORMATION

Part number

Package

Remarks

10-pin plastic SON

(LCC-10P-M04)

MB39C006APN

■ RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU MICROELECTRONICS with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), and

polybrominated diphenylethers (PBDE).

A product whose part number has trailing characters “E1” is RoHS compliant.

DS04-27245-2E

35

MB39C006A

■ LABELING SAMPLE (LEAD FREE VERSION)

Lead-free mark

JEITA logo JEDEC logo

MB123456P - 789 - GE1

(3N) 1MB123456P-789-GE1 1000

G

Pb

(3N)2 1561190005 107210

QC PASS

PCS

1,000

MB123456P - 789 - GE1

ASSEMBLED IN JAPAN

2006/03/01

MB123456P - 789 - GE1

1/1

1561190005

0605 - Z01A 1000

“ASSEMBLED IN CHINA” is printed on the label

of a product assembled in China.

The part number of a lead-free product has

the trailing characters “E1”.

■ MARKING FORMAT

Lead-free version

INDEX

36

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MB39C006A

■ RECOMMENDED MOUNTING CONDITIONS of MB39C006APN

[FUJITSU MICROELECTRONICS Recommended Mounting Conditions]

Item

Condition

Mounting Method

Mounting times

IR (infrared reflow), warm air reflow

2 times

Before opening

Please use it within two years after

manufacture.

Storage period

From opening to the 2nd

reflow

Storage conditions

5 °C to 30 °C, 70%RH or less (the lowest possible humidity)

[Parameters for Each Mounting Method]

IR (infrared reflow)

260°C

255°C

170 °C

~

190 °C

(b)

(c)

(d)

(e)

RT

(a)

(d')

H rank : 260 °C Max

(a) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(b) Preliminary heating : Temperature 170 °C to 190 °C, 60s to 180s

(c) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(d) Actual heating

: Temperature 260 °C Max; 255 °C or more, 10s or less

(d’)

: Temperature 230 °C or more, 40s or less

or

Temperature 225 °C or more, 60s or less

or

Temperature 220 °C or more, 80s or less

(e) Cooling

: Natural cooling or forced cooling

Note : Temperature : the top of the package body

DS04-27245-2E

37

MB39C006A

■ EVALUATION BOARD SPECIFICATION

The MB39C006A Evaluation Board provides the proper environment for evaluating the efficiency and other

characteristics of the MB39C006A.

• Terminal information

Symbol

Functions

Power supply terminal.

In standard condition 3.1 V to 5.5 V*.

VIN

* When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices

with a standard output voltage (VOUT = 2.5 V) and VIN < 3.1 V, FUJITSU MICRO-

ELECTRONICS recommends to change the output capacity (C1) to 10 μF.

VOUT

VCTL

Output terminal.

Power supply terminal for setting the CTL terminal.

Use this terminal by connecting with VIN (When SW is mounted).

Direct supply terminal of CTL.

CTL

CTL = 0 V to 0.80 V (Typ) : Shutdown

CTL = 0.95 V (Typ) to VIN : Normal operation

Direct supply terminal of MODE.

MODE

MODE = 0 V to 0.4 V (Max)

: PFM/PWM mode

MODE = OPEN (Remove R6) : PWM mode

Reference voltage output terminal.

V^REF= 1.20 V (Typ)

VREF

External reference voltage input terminal.

When an external reference voltage is supplied, connect to this terminal.

VREFIN

Operating frequency range setting terminal.

FSEL = 0 V : 2.0 MHz operation

FSEL = VIN : 3.2 MHz operation*

FSEL

* FUJITSU MICROELECTRONICS recommends to change the inductor to 1.5 μH.

POWERGOOD output terminal.

“High” level output when OUT voltage reaches 97% or more of output setting voltage.

POWERGOOD

Ground terminal.

PGND

AGND

Connect power supply GND to the PGND terminal next to the VOUT terminal.

Ground terminal.

• Startup terminal information

Terminal name

Condition

Functions

ON/OFF switch for the IC.

L : Shutdown

L : Open

H : Connect to VIN

CTL

H : Normal operation

Setting switch of FSEL terminal.

L : 2.0 MHz operation

H : 3.2 MHz operation

L : Open

H : Connect to VIN

FSEL

• Jumper information

JP

Functions

JP1

JP2

Normally used shorted (0 Ω)

Not mounted

38

DS04-27245-2E

MB39C006A

• Setup and checkup

(1) Setup

(1) -1. Connect the CTL terminal to the VIN terminal.

(1) -2. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the

PGND terminal. (Example of setting power supply voltage : 3.7 V)

(2) Checkup

Supply power to VIN. The IC is operating normally if VOUT = 2.5 V (Typ).

• Component layout on the evaluation board (Top View)

MODE

VCTL

JP2

SW1

R8

VIN

CTL

FSEL

C3

R4

JP1

C2

FSEL

R6

R3-2

R3-1

PGND

VOUT

M1

L1

C1

R1

CTL

AGND

POWER_GOOD VREF

VREFIN

MB39C006AEVB-06 Rev.2.0

DS04-27245-2E

39

MB39C006A

• Evaluation board layout (Top View)

Top Side (Layer1)

Inner Side (Layer2)

Inner Side(Layer 3)

Bottom Side(Layer 4)

40

DS04-27245-2E

MB39C006A

• Connection diagram

I

IN

VIN

C2

4.7 µF

L1

JP2

10

VDD

IOUT

2.2 µH

SW1-1

VOUT

LX 1

VCTL

CTL

3

8

R5

C1

4.7 µF

MB39C006A

1MΩ

JP1

9

5

OUT

R1

1MΩ

MODE

POWER-

GOOD

POWER-

GOOD

R6

SW1-2

FSEL

6

4

FSEL

VREF

PGND

R3-1

7.5 kΩ

AGND

R3-2

120 kΩ

VREFIN

7

GND

2

*

Not mounted

R4

300 kΩ

C6

0.1 µF

DS04-27245-2E

41

MB39C006A

• Component list

Component

Part Name

Model Number

Specification

Package

Vendor

Remark

M1

IC

MB39C006APN

⎯

SON10

FML

2.2 μH,

RDC=76 mΩ

L1

Inductor

VLF4012AT-2R2M

SMD

TDK

C1

C2

C6

Ceramic capacitor

C2012JB1A475K

C1608JB1H104K

4.7 μF (10 V)

0.1 μF (50 V)

2012

1608

TDK

RK73G1JTTD D

R1

Resister

1 MΩ 0.5%

1608

KOA

1 MΩ

R3-1

R3-2

R4

Resister

RR0816P-752-D

RR0816P-124-D

RR0816P-304-D

7.5 kΩ 0.5%

120 kΩ 0.5%

300 kΩ 0.5%

1608

SSM

RK73G1JTTD D

R5

R6

Resister

DIP switch

Jumper

1 MΩ 0.5%

0 Ω, 1A

⎯

1608

⎯

KOA

⎯

1 MΩ

RK73Z1J

Not

mounted

SW1

JP1

JP2

⎯

RK73Z1J

⎯

0 Ω, 1A

⎯

1608

⎯

KOA

⎯

Not

mounted

Jumper

Note : These components are recommended based on the operating tests authorized.

FML

TDK

KOA

SSM

: FUJITSU MICROELECTRONICS LIMITED

: TDK Corporation

: KOA Corporation

: SUSUMU Co., Ltd

■ EV BOARD ORDERING INFORMATION

EV Board Part No.

EV Board Version No.

MB39C006AEVB-06 Rev.2.0

Remarks

SON10

MB39C006AEVB-06

42

DS04-27245-2E

MB39C006A

■ PACKAGE DIMENSION

10-pin plastic SON

Lead pitch

0.50 mm

3.00 mm × 3.00 mm

Plastic mold

Package width ×

package length

Sealing method

Mounting height

Weight

0.75 mm MAX

0.018 g

(LCC-10P-M04)

10-pin plastic SON

(LCC-10P-M04)

3.00±0.10

(.118±.004)

2.40±0.10

(.094±.004)

10

6

INDEX AREA

1.70±0.10

(.067±.004)

3.00±0.10

(.118±.004)

0.40±0.10

(.016±.004)

1

5

1PIN CORNER

(C0.30(C.012))

0.50(.020)

TYP

0.25±0.03

(.010±.001)

0.75(.030)

MAX

0.15(.006)

0.05(.002)

0.00 ⁺^–0⁰^.^.⁰⁰⁰⁵

+.002

(.000

)

–.000

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

C

2008 FUJITSU MICROELECTRONICS LIMITED C10004S-c-1-2

Please confirm the latest Package dimension by following URL.

http://edevice.fujitsu.com/package/en-search/

DS04-27245-2E

43

MB39C006A

■ CONTENTS

page

- DESCRIPTION ................................................................................................................................................ 1

- FEATURES ...................................................................................................................................................... 1

- APPLICATIONS .............................................................................................................................................. 1

- PIN ASSIGNMENT ......................................................................................................................................... 2

- PIN DESCRIPTIONS ...................................................................................................................................... 2

- I/O PIN EQUIVALENT CIRCUIT DIAGRAM ............................................................................................... 3

- BLOCK DIAGRAM .......................................................................................................................................... 4

- FUNCTION OF EACH BLOCK ..................................................................................................................... 6

- ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 8

- RECOMMENDED OPERATING CONDITIONS ........................................................................................ 9

- ELECTRICAL CHARACTERISTICS ............................................................................................................ 10

- TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ............................ 12

- APPLICATION NOTES .................................................................................................................................. 13

- EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ........................................................... 18

- APPLICATION CIRCUIT EXAMPLES ......................................................................................................... 33

- USAGE PRECAUTIONS ............................................................................................................................... 35

- ORDERING INFORMATION ......................................................................................................................... 35

- RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .............................................. 35

- LABELING SAMPLE (LEAD FREE VERSION) ......................................................................................... 36

- MARKING FORMAT ....................................................................................................................................... 36

- RECOMMENDED MOUNTING CONDITIONS of MB39C006APN ........................................................ 37

- EVALUATION BOARD SPECIFICATION ................................................................................................... 38

- EV BOARD ORDERING INFORMATION ................................................................................................... 42

- PACKAGE DIMENSION ................................................................................................................................ 43

44

DS04-27245-2E

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MEMO

DS04-27245-2E

45

MB39C006A

MEMO

46

DS04-27245-2E

MB39C006A

MEMO

DS04-27245-2E

47

MB39C006A

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,

Shinjuku-ku, Tokyo 163-0722, Japan

Tel: +81-3-5322-3329

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

Asia Pacific

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

FUJITSU MICROELECTRONICS ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://www.fmal.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm. 3102, Bund Center, No.222 Yan An Road (E),

Shanghai 200002, China

Tel : +86-21-6146-3688 Fax : +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

Korea

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road,

Tsimshatsui, Kowloon, Hong Kong

Tel : +852-2377-0226 Fax : +852-2376-3269

http://cn.fujitsu.com/fmc/en/

FUJITSU MICROELECTRONICS KOREA LTD.

206 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fmk/

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating

the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to

the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear

facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon

system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited: Sales Promotion Department


型号：	MB39C006AEVB-06
厂家：	FUJITSU
描述：	1 ch DC/DC Converter IC Built-in Switching FET & POWERGOOD function, PFM/PWM Synchronous Rectification, and Down Conversion Support 1通道DC / DC转换器IC内置开关FET和电源良好功能， PFM / PWM同步整流降压转换支持转换器开关
文件：	总48页 (文件大小：635K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MB39C006AEVB-06 [FUJITSU]

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