MB39C007EVB-06_技术文档

FUJITSU MICROELECTRONICS

DATA SHEET

DS04-27246-2E

ASSP for Power Management Applications

2 ch DC/DC Converter IC Built-in Switching FET &

voltagedetectionfunction,PFM/PWMSynchronous

Rectification, and Down Conversion Support

MB39C007

■ DESCRIPTION

The MB39C007 is a current mode type 2-channel DC/DC converter IC built-in voltage detection, synchronous

rectifier, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier,

PFM/PWM control circuit, reference voltage source, and voltage detection circuit.

External inductor and decoupling capacitor are needed only for the external component.

MB39C007 is small, achieve a highly effective DC/DC converter in the full load range, this is suitable as the built-

in power supply for handheld equipment such as mobile phone/PDA, DVDs, and HDDs.

■ FEATURES

• High efficiency

• Low current consumption

• Output current

: 96% (Max)

: 30 μA (At PFM/ch)

: 800 mA/ch (Max)

: 2.5 V to 5.5 V

: 2.0 MHz (Typ)

• Input voltage range

• Operating frequency

• Built-in PWM operation fixed function

• No flyback diode needed

• Low dropout operation

• Built-in high-precision reference voltage generator : 1.30 V 2%

• Consumption current in shutdown mode

• Built-in switching FET

: For 100% on duty

: 1 μA or less

: P-ch MOS 0.3 Ω (Typ) , N-ch MOS 0.2 Ω (Typ)

• High speed for input and load transient response in the current mode

• Over temperature protection

• Packaged in a compact package

: QFN-24

■ APPLICATIONS

• Flash ROMs

• MP3 players

• Electronic dictionary devices

• Surveillance cameras

• Portable GPS navigators

• DVD drives

• IP phones

• Network hubs

• Mobile phones

etc.

2009.9

MB39C007

■ PIN ASSIGNMENT

(Top View)

LX2 DGND2 DGND2 DGND1 DGND1 LX1

18

17

16

15

14

13

DVDD2

DVDD1

OUT1

12

11

10

9

19

20

21

22

23

24

DVDD2

OUT2

MODE2

MODE1

VREFIN2

VREFIN1

8

7

XPOR

VDET

1

2

3

4

5

6

CTLP CTL2 CTL1 AGND AVDD VREF

(LCC-24P-M09)

2

DS04-27246-2E

MB39C007

■ PIN DESCRIPTIONS

Pin No.

Pin Name

I/O

Description

Voltage detection circuit block control input pin.

(L : Voltage detection function stop / H : Normal operation)

1

CTLP

I

DC/DC converter block control input pins.

(L : Shut down / H : Normal operation)

2, 3

CTL2, CTL1

I

4

5

AGND

AVDD

⎯

O

I

Control block ground pin.

Control block power supply pin.

Reference voltage output pin.

6

VREF

7

VDET

Voltage detection input pin.

8, 23

VREFIN1, VREFIN2

I

Error amplifier (Error Amp) non-inverted input pins.

Operation mode switch pins.

(L : PFM/PWM mode / OPEN : PWM mode)

9, 22

MODE1, MODE2

I

10, 21

11, 12

19, 20

OUT1, OUT2

DVDD1

Output voltage feedback pins.

⎯

O

Drive block power supply pins.

DVDD2

Inductor connection output pins.

High impedance during shut down.

13, 18

LX1, LX2

14, 15

16, 17

DGND1

DGND2

⎯

O

Drive block ground pins.

VDET circuit output pin.

Connected to an N-ch MOS open drain circuit.

24

XPOR

DS04-27246-2E

3

MB39C007

■ I/O PIN EQUIVALENT CIRCUIT DIAGRAM

VDD

∗

LX1, LX2

VREF

GND

VDD

GND

∗

VREFIN1

VREFIN2

VDET

,

OUT1

,

OUT2

GND

VDD

CTL1, CTL2, CTLP

∗

GND

VDD

XPOR

∗

MODE1

MODE2

,

GND

* : ESD Protection device

GND

4

DS04-27246-2E

MB39C007

■ BLOCK DIAGRAM

VIN

AVDD

DVDD1

DVDD2

5

11, 12 19, 20

CTL1

3

ON/OFF

OUT1

10

×3

Error Amp

DVDD1

−

+

IOUT

Comp.

VREFIN1

8

9

DAC

PFM/PWM

Logic

LX1

L:PFM/PWM

OPEN:PWM

VOUT1

13

Control

MODE1

Mode

Control

V^IN

CTLP

VDET

1

7

ON/OFF

24

−

+

XPOR

1.30 V

V^REF

VREF

CTL2

6

2

ON/OFF

OUT2

×3

DVDD2

Error Amp

21

−

+

I

OUT

Comp.

VREFIN2

23

PFM/PWM

Logic

L:PFM/PWM

OPEN:PWM

LX2

VOUT2

18

Control

MODE2

22

Mode

Control

4

16, 17

DGND2

14, 15

DGND1

AGND

DS04-27246-2E

5

MB39C007

• Current mode

• Original voltage mode type :

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Reference triangular wave (V^TRI)

• Current mode type :

Instead of the triangular wave (V^TRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents

that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Voltage (V^IDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular

wave generation circuit) and SW FET

Voltage mode type model

Current mode type model

VIN

Oscillator

−

S

Vc

+

Vc

Q

R

+

VTRI

V^IDET

−

SR-FF

Vc

V^IDET

Vc

V^TRI

ton

toff

ton

Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.

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MB39C007

■ FUNCTION OF EACH BLOCK

• PFM/PWM Logic control circuit

In normal operation, frequency (2.0 MHz) which is set by the built-in oscillator (square wave oscillation circuit)

controls the built-in P-ch MOS FET and N-ch MOS FET for the synchronous rectification operation. In the light

load mode, the intermittent (PFM) operation is executed.

This circuit protects against pass-through current caused by synchronous rectification and against reverse

current caused in a non-successive operation mode.

• I^OUTComparator circuit

This circuit detects the current (I^LX) which flows to the external inductor from the built-in P-ch MOS FET.

By comparing V^IDETobtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the built-

in P-ch MOS FET is turned off via the PFM/PWM Logic Control circuit.

• Error Amp phase compensation circuit

This circuit compares the output voltage to reference voltages such as VREF. This IC has a built-in phase

compensation circuit that is designed to optimize the operation of this IC.

This needs neither to be considered nor addition of a phase compensation circuit and an external phase

compensation device.

• VREF circuit

A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is

1.30 V (Typ).

• Voltage Detection (VDET) circuit

The voltage detection circuit monitors the VDET pin voltage. Normally, use the XPOR pin through pull-up with

an external resistor. When the VDET pin voltage reaches 0.6 V, it reaches the H level.

Timing chart example : (XPOR pin pulled up to V^IN)

VIN

VUVLO

CTLP

VTHHPR

VTHLPR

VDET

XPOR

VUVLO : UVLO threshold voltage

V^THHPR, VTHLPR : XPOR threshold voltage

• Protection circuit

This IC has a built-in over-temperature protection circuit.

The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction

temperature reaches + 135 °C. When the junction temperature comes down to + 110 °C, the switching FET is

returned to the normal operation. Since the PFM/PWM control circuit of this IC is in the control method in current

mode, the current peak value is also monitored and controlled as required.

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7

MB39C007

• Function table

Input

Output

VDET

CH1

function

CH2

function

VREF

CTL1

CTL2

CTLP MODE

Switching operation

function

L

*

Stopped

H

L

Operation

Stopped

H

L

Operation

Stopped

H

L

Operation

Stopped

L

PFM/PWM mode

H

L

H

L

H

Operation

Stopped

Operation

Stopped

Operation

Stopped

1.3 V

output

H

L

Operation

Stopped

H

L

Operation

Stopped

H

L

Operation

Stopped

Open

H

PWM fixed mode

H

L

H

Operation

Stopped

Operation

* : Don't care

8

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MB39C007

■ ABSOLUTE MAXIMUM RATINGS

Rating

Parameter

Symbol

Condition

Unit

Max

Min

−0.3

Power supply voltage

V^DD

AVDD = DVDD1 = DVDD2

+6.0

V

OUT1, OUT2 pins

VDD + 0.3

CTLP, CTL1, CTL2,

MODE1, MODE2 pins

−0.3

V^DD+ 0.3

Signal input voltage

V^ISIG

V

VREFIN1, VREFIN2 pins

VDET pin

−0.3

V^DD+ 0.3

+6.0

XPOR pull-up voltage

LX voltage

V^IXPOR

V^LX

XPOR pin

V

LX1, LX2 pins

VDD + 0.3

The upper limit value of ILX1

and I^LX2

LX Peak current

I^PK

⎯

1.8

A

⎯

3125*¹, *², *³

1563*¹, *², *⁴

1250*¹, *², *³

625*¹, *², *⁴

Ta ≤ +25 °C

Ta = +85 °C

mW

Power dissipation

P^D

mW

Operating ambient

temperature

Ta

⎯

−40

−55

+85

°C

Storage temperature

T^STG

+125

*1 : See the diagram of “■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS. Power dissipation vs.

Operating ambient temperature” for the package power dissipation of Ta from + 25 °C to + 85 °C.

*2 : When mounted on a four-layer epoxy board of 11.7 cm × 8.4 cm

*3 : IC is mounted on a four-layer epoxy board, which has thermal via, and the IC's thermal pad is connected to the

epoxy board (Thermal via is 9 holes).

*4 : IC is mounted on a four-layer epoxy board, which has no thermal via, and the IC's thermal pad is connected

to the epoxy board.

Notes: • The use of negative voltages below − 0.3 V to the AGND, DGND1, and DGND2 pin may create parasitic

transistors on LSI lines, which can cause abnormal operation.

• This device can be damaged if the LX pins are short-circuited to AVDD and DVDD1/DVDD2, or AGND and

DGND1/DGND2.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

DS04-27246-2E

9

MB39C007

■ RECOMMENDED OPERATING CONDITIONS

Value

Typ

3.7

⎯

Parameter

Symbol

Condition

Unit

Min

2.5

0.15

0

Max

5.5

Power supply voltage

VREFIN voltage

CTL voltage

V^DD

V^REFIN

V^CTL

I^LX

AVDD = DVDD1 = DVDD2

V

⎯

CTLP, CTL1, CTL2 pins

ILX1, ILX2

1.30

5.0

⎯

V

LX current

⎯

800

mA

2.5 V ≤ AVDD = DVDD1 =

⎯

0.5

1

DVDD2 < 3.0 V

VREF output current

I^ROUT

mA

3.0 V ≤ AVDD = DVDD1 =

DVDD2 ≤ 5.5 V

XPOR current

Inductor value

I^POR

L

⎯

1

mA

2.2

⎯

μH

Note : Theoutputcurrentfromthisdevicehasasituationtodecreaseifthepowersupplyvoltage(VIN)andtheDC/DC

converter output voltage (V^OUT) differ only by a small amount. This is a result of slope compensation and will

not damage this device.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of

the semiconductor device. All of the device's electrical characteristics are warranted when the

device is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

on the data sheet. Users considering application outside the listed conditions are advised to contact

their representatives beforehand.

10

DS04-27246-2E

MB39C007

■ ELECTRICAL CHARACTERISTICS

(Ta = +25 °C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V)

Value

Typ

0

Sym-

bol

Parameter

Input current

Pin No.

Condition

Unit

Min

Max

+ 100 nA

I^REFIN

V^OUT

8, 23 VREFIN = 0.15 V to 1.3 V

− 100

VREFIN = 0.833 V,

OUT = −100 mA

Output voltage

2.45

2.50

2.55

V

2.5 V ≤ AVDD = DVDD1 =

Input stability

Load stability

LINE

LOAD

R^OUT

I^PK

⎯

10

mV

MΩ

A

DVDD2 ≤ 5.5 V*¹

10, 21

−100 mA ≥ OUT ≥ −800 mA

OUT pin input

impedance

OUT = 2.0 V

0.6

0.9

⎯

1.0

1.2

30

1.5

1.7

⎯

LX Peak current

Output shorted to GND

PFM/PWM

switch current

I^MSW

⎯

mA

13, 18

DC/DC

converter

block

Oscillation

frequency

fosc

t^PG

⎯

1.6

⎯

2.0

45

2.4

80

MHz

μs

2, 3, C1/C2 = 4.7 μF, OUT = 0 A,

10, 21 OUT1/OUT2 : 0 → 90% V^OUT

Rise delay time

SW NMOS-FET

OFF voltage

V^NOFF

R^ONP

R^ONN

⎯

− 10*

0.30

0.20

⎯

mV

Ω

SW PMOS-FET

ON resistance

LX1/LX2 = −100 mA

0.48

13, 18

SW NMOS-FET

ON resistance

LX1/LX2 = −100 mA

0.42

Ω

I^LEAKM

I^LEAKH

T^OTPH

T^OTPL

0 ≤ LX ≤ VDD*²

VDD = 5.5 V, 0 ≤ LX ≤ VDD*²

− 1.0

− 2.0

⎯

+ 8.0

μA

LX leak current

+ 16.0 μA

Overheating

protection

(Junction Temp.)

+ 120* + 135* + 160* °C

⎯

+ 95*

+ 110* + 125* °C

Protection

circuit

block

V^THHUV

V^THLUV

2.17

2.03

2.30

2.15

2.43

2.27

V

UVLO threshold

voltage

⎯

5, 11,

12, 19,

20

UVLO

hysteresis width

V^HYSUV

0.08

0.15

0.25

V

V^THHPR

V^THLPR

575

558

600

583

625

608

mV

XPOR threshold

voltage

7

Voltage

XPOR

V^HYSPR

V^OL

⎯

17

⎯

mV

V

detection hysteresis width

circuit

block

XPOR output

voltage

XPOR = 25 μA

XPOR = 5.5 V

0.1

1.0

24

XPOR output

current

I^OH

μA

* : This value is not be specified. This should be used as a reference to support designing the circuits.

(Continued)

DS04-27246-2E

11

MB39C007

(Continued)

(Ta = +25 °C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V)

Value

Parameter

Symbol Pin No.

Condition

Unit

Min

0.55

0.40

Typ

0.95

0.80

Max

1.45

1.30

V^THHCT

⎯

V

CTL threshold

voltage

Control

block

V^THLCT

1, 2, 3

CTL pin

input current

0 V ≤ CTLP/CTL1/CTL2 ≤

I^ICTL

⎯

1.0

μA

V

3.7 V

VREF voltage

VREF

VREF = 0 A

1.274 1.300 1.326

Reference

voltage

block

6

VREF Load

stability

L^OADREF

VREF = −1.0 mA

⎯

20

mV

CTLP/CTL1/CTL2 = 0 V,

I^VDD1

1.0

μA

State of all circuits OFF*³

Shut down

power supply

current

CTLP/CTL1/CTL2 = 0 V,

V^DD= 5.5 V,

I^VDD1H

⎯

1.0

State of all circuits OFF*³

1. CTLP = 0 V,CTL1 = 3.7 V,

CTL2 = 0 V

2. CTLP = 0 V, CTL1 = 0 V,

CTL2 = 3.7 V, OUT = 0 A

Power supply

current at DC/DC

operation 1

I^VDD21

⎯

30

50

48

80

μA

(PFM mode)

CTLP = 0 V, CTL1/CTL2 =

3.7 V, OUT = 0 A

I^VDD22

1. CTLP = 0 V, CTL1 = 3.7 V,

CTL2 = 0 V, MODE1/

MODE2 = OPEN

5, 11,

12, 19,

20

I^VDD31

2. CTLP = 0 V, CTL1 = 0 V,

CTL2 = 3.7 V, MODE1/

MODE2 = OPEN,

⎯

3.5

10.0 mA

General

Power supply

current at DC/DC

operation 2

OUT = 0 A

(PWM mode)

CTLP = 0 V, CTL1/CTL2 =

3.7 V,

I^VDD32

I^VDD5

I^VDD

⎯

7.0

15

20.0 mA

MODE1/MODE2 = OPEN,

OUT = 0 A

Power supply

current

(voltagedetection

mode)

CTLP = 3.7 V,

CTL1/CTL2 = 0 V

24

μA

1. CTL1 = 3.7 V, CTL2 = 0 V

2. CTL1 = 0 V, CTL2 = 3.7 V,

VOUT1/VOUT2 = 90%,

OUT = 0 A*⁴

Power-on

invalid current

1000 2000 μA

*1 : The minimum value of AVDD = DVDD1 = DVDD2 is the 2.5 V or V^OUTsetting value + 0.6 V, whichever is higher.

*2 : The + leak at the LX pin includes the current of the internal circuit.

*3 : Sum of the current flowing into the AVDD, the DVDD1, and the DVDD2 pins.

*4 : Currentconsumptionbasedon100%ON-duty(HighsideFETinfullONstate). TheSWFETgatedrivecurrentis

not included because the device is in full ON state (no switching operation). Also the load current is not included.

12

DS04-27246-2E

MB39C007

■ TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS

MB39C007

V^DD

VDD

SW

DVDD1/DVDD2

CTL1/CTL2

VIN

R1

1 MΩ

C2

4.7 µF

SW

AVDD

C3

0.1 µF

MODE1/MODE2

L1

2.2 µH

VOUT1/

VOUT2

LX1/LX2

VREF

VDET

R5

R3-1

20 kΩ

510 kΩ

OUT1/OUT2

R6

100 kΩ

I^OUT

C1

R3-2

150 kΩ

DGND1/DGND2

VREFIN1/VREFIN2

4.7µF

AGND

GND

R4

300 kΩ

C6

0.1 µF

VOUT = 2.97 × VREFIN

Component

Specification

Vendor

Part Number

Remarks

R1

1 MΩ

KOA

RK73G1JTTD D 1 MΩ

R3-1

R3-2

20 kΩ

SSM

RR0816-203-D

RR0816-154-D

VOUT1/VOUT2 = 2.5 V

150 kΩ

Setting

R4

R5

R6

C1

C2

C3

C6

L1

300 kΩ

510 kΩ

100 kΩ

4.7 μF

0.1 μF

2.2 μH

SSM

KOA

SSM

TDK

RR0816-304-D

RK73G1JTTD D 510 kΩ

RR0816-104-D

C2012JB1A475K

C1608JB1E104K

C1608JB1H104K

VLF4012AT-2R2M

For adjusting slow start time

Note : These components are recommended based on the operating tests authorized.

TDK : TDK Corporation

SSM : SUSUMU Co., Ltd

KOA : KOA Corporation

DS04-27246-2E

13

MB39C007

■ APPLICATION NOTES

[1] Selection of components

• Selection of an external inductor

Basically it dose not need to design inductor. This IC is designed to operate efficiently with a 2.2 μH external

inductor.

The inductor should be rated for a saturation current higher than the LX peak current value during normal

operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)

LX peak current value I^PKis obtained by the following formula.

V^IN− VOUT

D

1

2

(V^IN− VOUT) × VOUT

2 × L × fosc × VIN

I^PK= IOUT +

×

= IOUT +

L

fosc

L

: External inductor value

: Load current

I^OUT

V^IN

: Power supply voltage

V^OUT: Output setting voltage

: ON-duty to be switched ( = V^OUT/VIN)

fosc : Switching frequency (2 MHz)

D

ex) When V^IN= 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 μH, fosc = 2.0 MHz

The maximum peak current value I^PKis obtained by the following formula.

(V^IN− VOUT) × VOUT

(3.7 V − 2.5 V) × 2.5 V

IPK = IOUT +

= 0.8 A +

=: 0.89 A

2 × L × fosc × V^IN

2 × 2.2 μH × 2.0 MHz × 3.7 V

• I/O capacitor selection

• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple

currents.

• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor

current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal

to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on

the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELEC-

TRONICS generally recommends a 4.7 μF capacitor, or a larger capacitor value can be used if ripple voltages

are not suitable. If the V^IN/VOUT voltage difference is within 0.6 V, the use of a 10 μF output capacitor value is

recommended.

• Types of capacitors

Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,

power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating

( − 80% to + 20%) . FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating

(

10% to 20%).

Normal electrolytic capacitors are not recommended due to their high ESR.

Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when

damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type

with an internal fuse.

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MB39C007

[2] Output voltage setting

The output voltage V^OUT(VOUT1 or VOUT2) of this IC is defined by the voltage input to VREFIN (VREFIN1 or

VREFIN2) . Supply the voltage for inputting to VREFIN from an external power supply, or set the VREF output

by dividing it with resistors.

The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is obtained by

the following formula.

R2

V^OUT= 2.97 × VREFIN, VREFIN =

× VREF

R1 + R2

(V^REF= 1.30 V)

MB39C007

VREF

R1

VREFIN

R2

Note : Refer to “■ APPLICATION CIRCUIT EXAMPLES” for the an example of this circuit.

Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value

so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .

DS04-27246-2E

15

MB39C007

[3] About conversion efficiency

The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.

The total loss (P^LOSS) of the DC/DC converter is roughly divided as follows :

P^LOSS= PCONT + PSW + PC

PCONT : Control system circuit loss (The power used for this IC to operate, including the gate driving power for

internal SW FETs)

P^SW

P^C

: Switching loss (The loss caused during switching of the IC's internal SW FETs)

: Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external

circuits )

The IC's control circuit loss (P^CONT) is extremely small, less than 100 mW* (with no load).

As the IC contains FETs which can switch faster with less power, the continuity loss (P^C) is more predominant

as the loss during heavy-load operation than the control circuit loss (P^CONT) and switching loss (PSW) .

Furthermore, the continuity loss (P^C) is divided roughly into the loss by internal SW FET ON-resistance and by

external inductor series resistance.

2

P^C= IOUT × (RDC + D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

: Internal P-ch SW FET ON resistance

: Internal N-ch SW FET ON resistance

: External inductor series resistance

: Load current

R^ONP

R^ONN

RDC

I^OUT

The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by

selecting components.

* : The loss in the successive operation mode. This IC suppresses the loss in order to execute the PFM operation

in the low load mode (less than 100 μA in no load mode). Mode is changed by the current peak value I^PKwhich

flows into switching FET. The threshold value is about 30 mA.

16

DS04-27246-2E

MB39C007

[4] Power dissipation and heat considerations

The IC is so efficient that no consideration is required in most cases. However, if the IC is used at a low power

supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for higher

efficiency.

The internal loss (P) is roughly obtained from the following formula :

2

P = I^OUT× (D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

: Internal P-ch SW FET ON resistance

: Internal N-ch SW FET ON resistance

: Output current

R^ONP

R^ONN

I^OUT

The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss

and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored.

In this IC with R^ONPgreater than RONN, the larger the on-duty cycle, the greater the loss.

When assuming V^IN= 3.7 V, Ta = + 70 °C, for example, RONP = 0.36 Ω and RONN = 0.30 Ω according to the

graph “MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 123 mW at

V^OUT= 2.5 V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”,

the power dissipation at an operating ambient temperature Ta of + 70 °C is 300 mW and the internal loss is

smaller than the power dissipation.

DS04-27246-2E

17

MB39C007

[5] XPOR threshold voltage setting [VPORH, VPORL]

Set the detection voltage by applying voltage to the VDET pin via an external resistor calculated according to

this formula.

R3 + R4

V^PORH=

× VTHHPR

× VTHLPR

R4

R3 + R4

R4

V^PORL=

V^THHPR= 0.600 V

V^THLPR= 0.583 V

Example for setting detection voltage to 3.7 V

R3 = 510 kΩ

R4 = 100 kΩ

510 kΩ + 100 kΩ

V^PORH=

× 0.600 = 3.66=: 3.7 [V]

100 kΩ

510 kΩ + 100 kΩ

100 kΩ

V^PORL=

× 0.583 = 3.56=: 3.6 [V]

VIN

MB39C007

AVDD

R3

1 MΩ

VDET

XPOR

R4

XPOR

18

DS04-27246-2E

MB39C007

[6] Transient response

Normally, I^OUTis suddenly changed while VIN and VOUT are maintained constant, responsiveness including the

response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an optimized

design, it shows good transient response characteristics. However, if ringing upon sudden change of the load

is high due to the operating conditions, add capacitor C6 (e.g. 0.1 μF). (Since this capacitor C6 changes the

start time, check the start waveform as well.) This action is not required for DAC input.

MB39C007

VREF

R1

VREFIN

VREFIN1/

VREFIN2

R2

C6

DS04-27246-2E

19

MB39C007

[7] Board layout, design example

The board layout needs to be designed to ensure the stable operation of this IC.

Follow the procedure below for designing the layout.

• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a through-hole

(TH) near the pins of this capacitor if the board has planes for power and GND.

• Large AC currents flow between this IC and the input capacitor (Cin), output capacitor (Co), and external

inductor (L). Group these components as close as possible to this IC to reduce the overall loop area occupied

by this group. Also try to mount these components on the same surface and arrange wiring without through-

hole wiring. Use thick, short, and straight routes to wire the net (The layout by planes is recommended.).

• Arrange a bypass capacitor for AVDD as close as possible to both the ADVV and AGND pins. Make a

through-hole (TH) near the pins of this capacitor if the board has planes for power and GND.

• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor

(Co). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of this IC as far

as possible.

• If applying voltage to the VREFIN1/VREFIN2 pins through dividing resistors, arrange the resistors so that the

wiring can be kept as short as possible. Also arrange them so that the GND pin of VREFIN1/VREFIN2 resistor

is close to the IC's AGND pin. Further, provide a GND exclusively for the control line so that the resistor can

be connected via a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close

to the VREFIN pin.

• If applying voltage to the VDET pin through dividing resistors, arrange the resistors so that the wiring can be

kept as short as possible. Also arrange so that the GND pin of the VDET resistor is close to the IC's AGND

pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via a path

that does not carry current.

• Try to make a GND plane on the surface to which this IC will be mounted. For efficient heat dissipation when

using the QFN-24 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in the

footprint of the thermal pad.

• Example of arranging IC SW system parts

Co

L

GND

Cin

VIN

Feedback line

1pin

GND

VIN

AVDD bypass capacitor

20

DS04-27246-2E

MB39C007

• Notes for circuit design

The switching operation of this IC works by monitoring and controlling the peak current which, incidentally,

serves as a form of short-circuit protection. However, do not leave the output short-circuited for long periods of

time. If the output is short-circuited where V^IN< 2.9 V, the current limit value (peak current to the inductor) tends

to rise. Leaving in the short-circuit state, the temperature of this IC will continue rising and activate the thermal

protection.

Once the thermal protection stops the output, the temperature of the IC will go down and operation will be

restarted, after which the output will repeat the starting and stopping.

Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the

peripherals surrounding it.

DS04-27246-2E

21

MB39C007

■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS

(Shown below is an example of characteristics for connection according to “■ TEST CIRCUIT FOR MEASURING

TYPICAL OPERATING CHARACTERISTICS”.)

• Characteristics CH1

Conversion efficiency vs. Load current

(PFM/PWM mode)

100

90

80

70

60

50

VIN = 3.7 V

VIN = 3.0 V

90

VIN = 3.0 V

80

VIN = 4.2 V

VIN = 5.0 V

70

60

50

V

IN = 4.2 V

Ta = +25°C

OUT = 1.2 V

V^OUT= 2.5 V

MODE = L

V

VIN = 5.0 V

MODE = L

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(PFM/PWM mode)

Conversion efficiency vs. Load current

(PFM/PWM mode)

100

90

80

70

60

50

100

90

80

70

60

50

V

IN = 3.7 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

OUT = 3.3 V

MODE = L

V

OUT = 1.8 V

V

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

(Continued)

22

DS04-27246-2E

MB39C007

Conversion efficiency vs. Load current

(PWM fixed mode)

100

90

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

V

IN = 3.0 V

V

IN = 3.7 V

V

IN = 3.0 V

V

IN = 3.7 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

OUT = 1.2 V

Ta = +25°C

OUT = 2.5 V

MODE = OPEN

V

MODE = OPEN

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

(PWM fixed mode)

Conversion efficiency vs. Load current

(PWM fixed mode)

100

V

IN = 3.7 V

V

IN = 3.7 V

90

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

V

IN = 3.0 V

V

IN = 4.2 V

V

IN = 4.2 V

V

IN = 5.0 V

V

IN = 5.0 V

Ta = +25°C

V^OUT= 3.3 V

MODE = OPEN

Ta = +25°C

OUT = 1.8 V

MODE = OPEN

V

1

10

100

1000

1

10

100

1000

Load current I^OUT(mA)

Load current IOUT (mA)

(Continued)

DS04-27246-2E

23

MB39C007

Output voltage vs. Input voltage

(PFM/PWM mode)

Output voltage vs. Input voltage

(PWM fixed mode)

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

Ta = +25°C

OUT = 2.5 V

MODE = L

V

OUT = 2.5 V

V

MODE = OPEN

I

OUT = 0 A

I

OUT = 0 A

I

OUT = -100 mA

I

OUT = -100 mA

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage V^IN(V)

Input voltage VIN (V)

Output voltage vs. Load current

(PWM fixed mode)

Output voltage vs. Load current

(PFM/PWM mode)

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

Ta = +25°C

V^IN= 3.7 V

VOUT = 2.5 V

MODE = OPEN

Ta = +25°C

V

IN = 3.7 V

OUT = 2.5 V

MODE = L

0

200

400

600

800

0

200

400

600

800

Load current I^OUT(mA)

Load current IOUT (mA)

(Continued)

24

DS04-27246-2E

MB39C007

Reference voltage vs.

Operating ambient temperature

Reference voltage vs. Input voltage

1.40

1.38

1.36

1.34

1.32

1.30

1.28

1.26

1.24

1.22

1.20

1.40

1.38

1.36

1.34

1.32

1.30

1.28

1.26

1.24

1.22

1.20

Ta = +25°C

V

IN = 3.7 V

OUT = 2.5 V

V

OUT = 2.5 V

I

OUT = 0 A

I

OUT = 0 A

OUT = -100 mA

2.0

3.0

4.0

5.0

6.0

-50

0

+50

+100

Input voltage VIN (V)

Operating ambient temperature Ta ( °C)

Input current vs. Input voltage

(PWM fixed mode)

Input current vs. Input voltage

(PFM/PWM mode)

10

50

45

40

35

30

25

20

15

10

5

9

8

7

6

5

4

3

2

1

0

Ta = +25°C

OUT = 2.5 V

MODE = OPEN

V

OUT = 2.5 V

V

MODE = L

0

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

(Continued)

DS04-27246-2E

25

MB39C007

Input current vs. Operating ambient temperature

(PFM/PWM mode)

Input current vs. Operating ambient temperature

(PWM fixed mode)

50

45

40

35

30

25

20

10

9

8

7

6

5

4

V

IN = 3.7 V

15

10

5

3

2

1

0

V

IN = 3.7 V

OUT = 2.5 V

VOUT = 2.5 V

MODE = L

MODE = OPEN

0

-50

0

+50

+100

-50

0 +50

Operating ambient temperature Ta ( °C)

Oscillation frequency vs.

Operating ambient temperature

Oscillation frequency vs.

Power supply voltage

2.4

V

IN = 3.7 V

Ta = +25°C

OUT = 1.8 V

OUT = -100 mA

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

VOUT = 2.5 V

V

I

OUT = -100 mA

-50

0

+50

+100

2.0

3.0

4.0

5.0

6.0

Operating ambient temperature Ta ( °C)

Power supply voltage VIN (V)

(Continued)

26

DS04-27246-2E

MB39C007

P-ch MOS FET ON resistor vs.

Operating ambient temperature

MOS FET ON resistor vs. Input voltage

0.6

0.5

0.4

0.3

0.2

0.1

0

V

IN = 3.7 V

0.5

0.4

0.3

0.2

0.1

0

P-ch

V

IN = 5.5 V

N-ch

Ta = +25°C

5.0

-50

0

+50

+100

2.0

3.0

4.0

6.0

Input voltage V^IN(V)

Operating ambient temperature Ta ( °C)

N-ch MOS FET

ON resistor vs. Operating ambient temperature

0.6

0.5

V

IN = 3.7 V

0.4

0.3

0.2

0.1

0

V

IN = 5.5 V

-50

0

+50

+100

Operating ambient temperature Ta ( °C)

(Continued)

DS04-27246-2E

27

MB39C007

MODE VTH vs. Input voltage

CTL VTH vs. Input voltage

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

V

THHCT

V

THLCT

V

THMMD

Ta = +25°C

OUT = 2.5 V

V

Ta = +25°C

VTHHCT : Circuit OFF→ON

V^THLCT: Circuit ON→OFF

VTHLMD

V

OUT = 2.5 V

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

Input voltage V^IN(V)

VXPOR vs. Input voltage

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Ta = +25°C

VPORL

VPORH

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

(Continued)

28

DS04-27246-2E

MB39C007

(Continued)

Power dissipation vs.

Operating ambient temperature

(with thermal via)

Power dissipation vs.

Operating ambient temperature

(without thermal via)

3500

3000

2500

2000

1500

1000

500

3125

3000

2500

2000

1500

1000

500

1563

1250

625

0

+85

-50

0

+50

+100

-50

0

+50

+100

Operating ambient temperature Ta ( °C)

DS04-27246-2E

29

MB39C007

• Switching waveform

PFM/PWM operation

2 μs/div

VO2 : 20 mV/div (AC)

VO1 : 20 mV/div (AC)

1

V

LX2 : 2.0 V/div

V

LX1 : 2.0 V/div

2

lLX2 : 500 mA/div

lLX1 : 500 mA/div

4

VIN = 3.7 V, IO1 = −5 mA, VO1 = 2.5 V, MODE = L ,Ta = +25 °C

VIN = 3.7 V, IO2 = −5 mA, VO2 = 1.8 V, MODE = L ,Ta = +25 °C

PWM operation

2 μs/div

VO1 : 20 mV/div (AC)

VO2 : 20 mV/div(AC)

1

VLX1 : 2.0 V/div

VLX2 : 2.0 V/div

2

lLX1 : 500 mA/div

lLX2 : 500 mA/div

4

V

IN = 3.7 V, VO1 = 2.5 V, IO1 = −800 mA, MODE = L ,Ta = +25 °C

VIN = 3.7 V, VO2 = 1.8 V, IO2 = −800 mA, MODE = L ,Ta = +25 °C

30

DS04-27246-2E

MB39C007

• Output waveforms at sudden load changes

0 A ←→ − 800 mA

100 μs/div

VO1 : 200 mV/div

VO2 : 200 mV/div

1

2

V

LX1 : 2.0 V/div

2

V

LX2 : 2.0 V/div

−800 mA

lO2 : 1 A/div

lO1 : 1 A/div

4

0 A

IN = 3.7 V, VO2 = 1.8 V, MODE = L ,Ta = +25 °C

0 A

IN = 3.7 V, VO1 = 2.5 V, MODE = L ,Ta = +25 °C

V

− 20 mA ←→ − 800 mA

100 μs/div

V

O1 : 200 mV/div

V

O2 : 200 mV/div

1

2

V

LX1 : 2.0 V/div

2

V

LX2 : 2.0 V/div

800 mA

lO2 : 1 A/div

lO1 : 1 A/div

4

20 mA

IN = 3.7 V, VO2 = 1.8 V, MODE = L ,Ta = +25 °C

20 mA

IN = 3.7 V, VO1 = 2.5 V, MODE = L ,Ta = +25 °C

V

− 100 mA ←→ − 800 mA

100 μs/div

V

O1 : 200 mV/div

100 µs/div

VO2 : 200 mV/div

1

2

V

LX1 : 2.0 V/div

2

VLX2 : 2.0 V/div

lO2 : 1 A/div

lO1 : 1 A/div

800 mA

4

100 mA

VIN = 3.7 V, VO2 = 1.8 V, MODE = L ,Ta = +25 °C

V

IN = 3.7 V, VO1 = 2.5 V, MODE = L ,Ta = +25 °C

DS04-27246-2E

31

MB39C007

• CTL start-up waveform

No load, No VREFIN capacitor

10 μs/div

1

3

CTL2 : 5 V/div

CTL1 : 5 V/div

VO2 : 1 V/div

VO1 : 1 V/div

2

3

1

2

VLX2 : 5 V/div

VLX1 : 5 V/div

I

LX1 : 1 A/div

ILX2 : 1 A/div

4

VIN = 3.7 V, VO2 = 1.8 V, MODE = L, Ta = + 25 °C

V

IN = 3.7 V, VO1 = 2.5 V, MODE = L, Ta = + 25 °C

Maximum load, No VREFIN capacitor

10 μs/div

1

3

CTL1 : 5 V/div

CTL2 : 5 V/div

VO2 : 1 V/div

VO1 : 1 V/div

1

2

3

VLX2 : 5 V/div

VLX1 : 5 V/div

2

ILX1 : 1 A/div

ILX2 : 1 A/div

4

VIN = 3.7 V, VO2 = 1.8 V, IO2 = −800 mA, MODE = L, Ta = + 25 °C

VIN = 3.7 V, VO1 = 2.5 V, IO1 = −800 mA, MODE = L, Ta = + 25 °C

(Continued)

32

DS04-27246-2E

MB39C007

(Continued)

No load, VREFIN capacitor = 0.1 μF

1 ms/div

1

CTL2 : 5 V/div

CTL1 : 5 V/div

V

O2 : 1 V/div

2

3

V^O1: 1 V/div

V^LX1: 5 V/div

V

LX2 : 5 V/div

2

3

ILX1 : 1 A/div

I

LX2 : 1 A/div

4

VIN = 3.7 V, VO1 = 2.5 V

,

MODE = L, Ta = + 25 °C

V

IN = 3.7 V, VO2 = 1.8 V

,

MODE = L, Ta = + 25 °C

Maximum load, VREFIN capacitor = 0.1 μF

1 ms/div

1

CTL2 : 5 V/div

CTL1 : 5 V/div

VO1 : 1 V/div

2

3

4

VLX1 : 5 V/div

VO2 : 1 V/div

V

LX2 : 5 V/div

2

3

I

LX1 : 1 A/div

I

LX2 : 1 A/div

4

VIN = 3.7 V, VO1 = 2.5 V, IO1 = −800 mA, MODE = L, Ta = + 25 °C

V

IN = 3.7 V, VO2 = 1.8 V, IO2 = −800 mA, MODE = L, Ta = + 25 °C

• CTL stop waveform

Maximum load, VREFIN capacitor = 0.1 μF

10 μs/div

CTL2 : 5 V/div

CTL1 : 5 V/div

1

VO1 : 1 V/div

V

O2 : 1 V/div

2

3

2

3

VLX1 : 5 V/div

V

LX2 : 5 V/div

ILX1 : 1 A/div

ILX2 : 1 A/div

4

VIN = 3.7 V, VO1 = 2.5 V, IO1 = −800 mA, MODE = L, Ta = + 25 °C

V

IN = 3.7 V, VO2 = 1.8 V, IO2 = −800 mA, MODE = L, Ta = + 25 °C

DS04-27246-2E

33

MB39C007

• Current limitation waveform

100 μs/div

VO1 : 1 V/div

VO2 : 1 V/div

1

1.5 A

ILX1 : 1 A/div

ILX2 : 1 A/div

600 mA

4

V

IN = 3.7 V

,

V

O1 = 2.5 V

,

MODE = OPEN

,

Ta = +25 °C

V

IN = 3.7 V

,

V

O2 = 1.8 V

,

MODE = OPEN

,

Ta = +25 °C

• Voltage detection waveform

1 ms/div

1

VIN : 3 V/div

2

VVDET : 1 V/div

VXPOR : 3 V/div

3

VIN = 3.7 V

Pull-up XPOR to VIN at 1 kΩ.

, CTLP = VIN, Ta = +25 °C

• Waveform of dynamic output voltage transition (V^O11.8 V←→2.5 V)

10 μs/div

VO1 : 200 mV/div

2.5 V

1.8 V

1

V

VREFIN1 : 200 mV/div

840 mV

3

610 mV

V

IN = 3.7 V

,

l

O1 = −800 mA

, −576 mA ( 3.125 Ω),

MODE = L

,

Ta = +25 °C No VREFIN capacitor

,

34

DS04-27246-2E

MB39C007

■ APPLICATION CIRCUIT EXAMPLES

• APPLICATION CIRCUIT EXAMPLE 1

• An external voltage is input to the reference voltage external input (VREFIN1, VREFIN2) , and the V^OUTvoltage

is set to 2.97 times the V^OUTsetting gain.

MB39C007

C3

VIN

4.7 μF

11

12

DVDD1

3

CTL1

CPU

R7

DGND1 14

15

1 MΩ

C4

4.7 μF

19

20

DVDD2

DGND2

8

2

16

17

VREFIN1

CTL2

DAC1

5

4

AVDD

AGND

C5

0.1 μF

R8

1 MΩ

L1

2.2 μH

23

VREFIN2

DAC2

VOUT1

13

10

LX1

C1

4.7 μF

OUT1

APLI1

9

MODE1

MODE2

L = PFM/PWM

OPEN = PWM

L2

2.2 μH

22

VOUT2

18

21

LX2

C2

6

VREF

4.7 μF

OUT2

APLI2

7

1

VDET

CTLP

24

XPOR

VOUT = 2.97 × VREFIN

DS04-27246-2E

35

MB39C007

• APPLICATION CIRCUIT EXAMPLE 2

• The voltage of VREF pin is input to the reference voltage external input (VREFIN1, VREFIN2) by dividing

resistors. The V^OUT1voltage is set to 2.5 V and VOUT2 voltage is set to 1.8 V.

MB39C0007

C3

VIN

4.7 μF

11

12

DVDD1

3

CTL1

CPU

R7

DGND1 14

15

1 MΩ

C4

4.7 μF

19

20

DVDD2

DGND2

R1 163 kΩ

( 13 kΩ + 150 kΩ )

16

17

8

2

VREFIN1

R2

300 kΩ

5

4

AVDD

AGND

C5

0.1 μF

CTL2

R8

1 MΩ

L1

2.2 μH

VOUT1

13

10

LX1

R5 343 kΩ

( 13 kΩ + 330 kΩ )

C1

23

VREFIN2

4.7 μF

OUT1

R6

APLI1

300 kΩ

6

9

VREF

L2

2.2 μH

VOUT2

18

21

LX2

MODE1

L = PFM/PWM

OPEN = PWM

C2

4.7 μF

22

7

MODE2

VDET

OUT2

APLI2

1

CTLP

XPOR 24

V^OUT1= 2.97 × VREFIN1

R2

VREFIN1 =

× V^REF

R1 + R2

(VREF = 1.30 V)

300 kΩ

163 kΩ + 300 kΩ

VOUT1 = 2.97 ×

× 1.30 V = 2.5 V

× 1.30 V = 1.8 V

300 kΩ

343 kΩ + 300 kΩ

VOUT2 = 2.97 ×

36

DS04-27246-2E

MB39C007

• APPLICATION CIRCUIT EXAMPLE COMPONENTS LIST

Component

Item

Part Number

VLF4012AT-2R2M

MIPW3226D2R2M

VLF4012AT-2R2M

MIPW3226D2R2M

C2012JB1A475K

C1608JB1E104K

Specification

2.2 μH, RDC = 76 mΩ

2.2 μH, RDC = 100 mΩ

2.2 μH, RDC = 76 mΩ

2.2 μH, RDC = 100 mΩ

4.7 μF (10 V)

Package Vendor

SMD

2012

TDK

FDK

TDK

FDK

TDK

L1

Inductor

L2

C1

C2

C3

C4

C5

Ceramic capacitor

4.7 μF (10 V)

0.1 μF (50 V)

RK73G1JTTD D 13 kΩ 13 kΩ

RK73G1JTTD D 150 kΩ 150 kΩ

1608

KOA

R1

R2

R5

Resistor

RK73G1JTTD D 300 kΩ 300 kΩ

1608

KOA

RK73G1JTTD D 13 kΩ 13 kΩ

RK73G1JTTD D 330 kΩ 330 kΩ

1608

KOA

R6

R7

R8

Resistor

RK73G1JTTD D 300 kΩ 300 kΩ

1608

KOA

RK73G1JTTD D 1 MΩ 1 MΩ 0.5%

TDK : TDK Corporation

FDK : FDK Corporation

KOA : KOA Corporation

DS04-27246-2E

37

MB39C007

■ USAGE PRECAUTIONS

1. Do not configure the IC over the maximum ratings

If the lC is used over the maximum ratings, the LSl may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of

these conditions adversely affect the reliability of the LSI.

2. Use the devices within recommended operating conditions

The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common

impedance

4. Take appropriate static electricity measures

• Containers for semiconductor materials should have anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

5. Do not apply negative voltages

The use of negative voltages below −0.3 V may create parasitic transistors on LSI lines, which can cause

abnormal operation.

■ ORDERING INFORMATION

Part number

Package

Remarks

24-pin plastic QFN

(LCC-24P-M09)

MB39C007QN

■ RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU MICROELECTRONICS with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB) , and

polybrominated diphenyl ethers (PBDE).

A product whose part number has trailing characters “E1” is RoHS compliant.

38

DS04-27246-2E

MB39C007

■ MARKING FORMAT (LEAD FREE VERSION)

Lead-free version

X

XXXXX

INDEX

DS04-27246-2E

39

MB39C007

■ LABELING SAMPLE (LEAD FREE VERSION)

Lead-free mark

JEITA logo JEDEC logo

MB123456P - 789 - GE1

(3N) 1MB123456P-789-GE1 1000

G

Pb

(3N)2 1561190005 107210

QC PASS

PCS

1,000

MB123456P - 789 - GE1

ASSEMBLED IN JAPAN

2006/03/01

MB123456P - 789 - GE1

1/1

1561190005

0605 - Z01A 1000

“ASSEMBLED IN CHINA” is printed on the label

of a product assembled in China.

The part number of a lead-free product has

the trailing characters “E1”.

40

DS04-27246-2E

MB39C007

■ RECOMMENDED MOUNTING CONDITIONS OF MB39C007QN

[FUJITSU MICROELECTRONICS Recommended Mounting Conditions]

Item

Condition

IR (infrared reflow), warm air reflow

2 times

Mounting Method

Mounting times

Before opening

Please use it within two years after

manufacture.

Storage period

From opening to the 2nd

reflow

Storage conditions

5 °C to 30 °C, 70%RH or less (the lowest possible humidity)

[Parameters for Each Mounting Method]

IR (infrared reflow)

260 °C

255 °C

170 °C

to

190 °C

(b)

(c)

(d)

(e)

RT

(a)

(d')

H rank : 260 °C Max

(a) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(b) Preliminary heating : Temperature 170 °C to 190 °C, 60s to 180s

(c) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(d) Actual heating

: Temperature 260 °C Max; 255 °C or more, 10s or less

(d’)

: Temperature 230 °C or more, 40s or less

or

Temperature 225 °C or more, 60s or less

or

Temperature 220 °C or more, 80s or less

(e) Cooling

: Natural cooling or forced cooling

Note : Temperature : the top of the package body

DS04-27246-2E

41

MB39C007

■ EVALUATION BOARD SPECIFICATION

The MB39C007 Evaluation Board provides the proper for evaluating the efficiency and other characteristics of

the MB39C007.

• Terminal information

Symbol

Functions

Power supply terminal

In standard condition 3.1 V to 5.5 V*

VIN

* : When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices

with a standard output voltage (VOUT1 = 2.5 V) when VIN < 3.1 V, FUJITSU MICRO-

ELECTRONICS recommends changing the output capacity (C1, C2) to 10 μF.

Output terminals

(VOUT1: CH1, VOUT2: CH2)

VOUT1, VOUT2

VCTL

Power supply terminal for setting the CTL1, CTL2 and CTLP terminals.

Use by connecting with VIN (When SW is mounted).

Direct supply terminal of CTL (CTL1 : for CH1, CTL2 : for CH2)

CTL1, CTL2

CTL1, CTL2 = 0 V to 0.8 V (Typ.)

: Shutdown

CTL1, CTL2 = 0.95 V (Typ.) to VIN (5 V Max) : Normal operation

Direct supply terminal of MODE (CH1 : for MODE1, CH2 : for MODE2)

MODE1, MODE2

VREF

MODE1, MODE2 = 0 V to 0.4 V(Max)

: PFM/PWM mode

MODE1, MODE2 = OPEN(Remove R1 and R4) : PWM mode

Reference voltage output terminal

VREF = 1.30 V (Typ.)

External reference voltage input terminals

(VREFIN1 : for CH1, VREFIN2 : for CH2)

When an external reference voltage is supplied, connect it to the terminal for each chan-

nel.

VREFIN1, VREFIN2

VDET

CTLP

Voltage input terminal for voltage detection

Voltage detection circuit block control terminal

CTLP = L : Voltage detection circuit block stop

CTLP = H : Normal operation

Voltage detection circuit output terminal

The N-ch MOS open drain circuit is connected.

XPOR

VXPOR

Pull-up voltage terminal for the XPOR terminal

Ground terminal

Connect power supply GND to the PGND terminal next to the VIN terminal.

Connect output (load) GND to the PGND terminal between the VOUT1 terminal and the

VOUT2 terminal.

PGND

AGND

Ground terminal

42

DS04-27246-2E

MB39C007

• Startup terminal information

Terminal name

Condition

Functions

ON/OFF switch for CH1

L : Shutdown

H : Normal operation.

L : Open

H : Connect to VIN

CTL1

ON/OFF switch for CH2

L : Shutdown

H : Normal operation.

L : Open

H : Connect to VIN

CTL2

CTLP

ON/OFF switch for the voltage detection block

L: Stops the voltage detection circuit

H: Normal operation.

L : Open

H : Connect to VIN

• Jumper information

JP

Functions

Short-circuited in the layout pattern of the board (normally used shorted).

Not mounted

JP1

JP2

JP3

JP6

Normally used shorted (0 Ω)

• Setup and checkup

(1) Setup

1. Connect the CTL1 terminal and the CTL2 terminal to the VIN terminal.

2. Put it into “L” state by connecting the CTLP terminal to the AGND pad.

3. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the PGND

terminal. Make sure PGND is connected to the PGND terminal next to the VIN terminal.

(Example of setting power-supply voltage : 3.7 V)

(2) Checkup

Supply power to VIN. The IC is operating normally if VOUT1 = 2.5 V (Typ) and VOUT2 = 1.8 V (Typ).

DS04-27246-2E

43

MB39C007

• Component layout on the evaluation board (Top View)

MB39C007EVB-06Rev. 2.0

VOUT2

VOUT1

PGMD

M1

C2

C1

MODE2

VREFIN2

XPOR

MODE1

VIN

R1

L2

L1

R4

R9

C3

VREFIN1

C4

C6

C7

R5

R2

C5

R4-1

O F F

R4-2

R7

VREF

R6-2

R6-1

R3

VDET

JP3

VXPOR

1

4

SW1

VCTL

AGND

CTL2

CTL1

CTLP

R8

R10

44

DS04-27246-2E

MB39C007

• Evaluation board layout (Top View)

Top Side (Layer1)

Inside GND (Layer2)

Inside VIN & GND

(Layer3)

Bottom Side (Layer4)

DS04-27246-2E

45

MB39C007

• Connection diagram

I^IN

VIN

MB39C007

JP3

SW1

11

12

DVDD1

3

VCTL

CTL1

R8

DVDD1

C3

4.7 μF

1 MΩ

14

15

DGND1

MODE1

9

PGND

R1

0 Ω

DVDD2 19

VREF

20

DVDD2

R6-1

13 kΩ

R6-2

C4

4.7 μF

150 kΩ

8

VREFIN1

C6

0.1 µF

16

17

DGND2

R7

300 kΩ

JP6

SW1

5

4

AVDD

AGND

2

CTL2

C5

0.1 μF

R9

1 MΩ

AGND

CTL2

MODE2

22

L1

2.2 μH

I^OUT

R4

0 Ω

13

VOUT1

LX1

VREF

C1

4.7 μF

JP1

R4-1

13 kΩ

R4-2

10

OUT1

330 kΩ

23

VREFIN2

VREF

C7

0.1 µF

R5

300 kΩ

L2

2.2 μH

I_OUT

18

VOUT2

LX2

C2

4.7 μF

6

VREF

JP2

VREF

OUT2 21

R1-1

0 Ω

R1-2

300 kΩ

VXPOR

XPOR

VDET

CTLP

7

1

VDET

CTLP

R2

75 kΩ

R3

1MΩ

SW1

24

XPOR

R10

1 MΩ

*

Not mounted

46

DS04-27246-2E

MB39C007

• Component list

Compo-

nent

Part Name

Model Number

Specification

Package Vendor

Remark

M1

IC

Inductor

MB39C007QN

VLF4012AT-2R2M

C2012JB1A475K

C1608JB1E104K

C1608JB1H104K

RK73Z1J

⎯

QFN-24

SMD

2012

1608

FML

TDK

KOA

SSM

KOA

SSM

KOA

L1

2.2 μH, RDC=76 mΩ

4.7 μF(10 V)

0.1 μF(50 V)

0 Ω, 1 A

L2

Inductor

C1

Ceramic capacitor

Resistor

C2

C3

C4

C5

C6

C7

R1

R1-1

R1-2

R2

Resistor

RK73Z1J

0 Ω, 1 A

Resistor

RR0816P-304-D

RR0816P-753-D

RK73G1JTTD D 1MΩ

RK73Z1J

300 kΩ 0.5%

75 kΩ 0.5%

1 MΩ 0.5%

0 Ω, 1 A

Resistor

R3

Resistor

R4

Resistor

R4-1

R4-2

R5

Resistor

RR0816P-133-D

RR0816P-334-D

RR0816P-304-D

RR0816P-133-D

RR0816P-154-D

RR0816P-304-D

RK73G1JTTD D 1MΩ

13 kΩ 0.5%

330 kΩ 0.5%

300 kΩ 0.5%

13 kΩ 0.5%

150 kΩ 0.5%

300 kΩ 0.5%

1 MΩ 0.5%

Resistor

R6-1

R6-2

R7

Resistor

R8

Resistor

R9

Resistor

R10

Resistor

Not

mounted

SW1

JP1

JP2

DIP switch

Jumper

⎯

Pattern-

shorted

Pattern-

shorted

Jumper

Not

mounted

JP3

JP6

Jumper

⎯

RK73Z1J

0 Ω, 1A

1608

KOA

Note : These components are recommended based on the operating tests authorized.

FML : FUJITSU MICROELECTRONICS LIMITED

TDK : TDK Corporation

KOA : KOA Corporation

SSM : SUSUMU Co., Ltd

DS04-27246-2E

47

MB39C007

■ EV BOARD ORDERING INFORMATION

EV Board Part No.

EV Board Version No.

MB39C007EVB-06 Rev.2.0

Remarks

MB39C007EVB-06

QFN-24

48

DS04-27246-2E

MB39C007

■ PACKAGE DIMENSION

24-pin plastic QFN

Lead pitch

0.50 mm

Sealing method

Plastic mold

(LCC-24P-M09)

24-pin plastic QFN

(LCC-24P-M09)

2.70±0.10

4.00±0.10

(.157±.004)

(.106±.004)

2.70±0.10

(.106±.004)

4.00±0.10

(.157±.004)

0.25±0.05

INDEX AREA

(.010±.002)

3-R0.20

(3-R.008)

0.40±0.10

(.016±.004)

0.50(.020)

TYP

1PIN CORNER

(C0.25(C.010))

0.85(.033)

MAX

0.08(.003)

0.20(.008)

0.00(.000)

MIN

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

C

2006-2008 FUJITSU MICROELECTRONICS LIMITED C24059S-c-2-3

Please confirm the latest Package dimension by following URL.

http://edevice.fujitsu.com/package/en-search/

DS04-27246-2E

49

MB39C007

■ CONTENTS

page

- DESCRIPTION .................................................................................................................................................... 1

- FEATURES .......................................................................................................................................................... 1

- APPLICATIONS .................................................................................................................................................. 1

- PIN ASSIGNMENT ............................................................................................................................................. 2

- PIN DESCRIPTIONS .......................................................................................................................................... 3

- I/O PIN EQUIVALENT CIRCUIT DIAGRAM ................................................................................................... 4

- BLOCK DIAGRAM .............................................................................................................................................. 5

- FUNCTION OF EACH BLOCK ......................................................................................................................... 7

- ABSOLUTE MAXIMUM RATINGS ................................................................................................................... 9

- RECOMMENDED OPERATING CONDITIONS ............................................................................................ 10

- ELECTRICAL CHARACTERISTICS ................................................................................................................ 11

- TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ................................ 13

- APPLICATION NOTES ...................................................................................................................................... 14

- EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ............................................................... 22

- APPLICATION CIRCUIT EXAMPLES ............................................................................................................. 35

- USAGE PRECAUTIONS ................................................................................................................................... 38

- ORDERING INFORMATION ............................................................................................................................. 38

- RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .................................................. 38

- MARKING FORMAT (LEAD FREE VERSION) .............................................................................................. 39

- LABELING SAMPLE (LEAD FREE VERSION) ............................................................................................. 40

- RECOMMENDED MOUNTING CONDITIONS OF MB39C007QN ............................................................ 41

- EVALUATION BOARD SPECIFICATION ....................................................................................................... 42

- EV BOARD ORDERING INFORMATION ....................................................................................................... 48

- PACKAGE DIMENSION .................................................................................................................................... 49

50

DS04-27246-2E

MB39C007

MEMO

DS04-27246-2E

51

MB39C007

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,

Shinjuku-ku, Tokyo 163-0722, Japan

Tel: +81-3-5322-3329

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

Asia Pacific

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

FUJITSU MICROELECTRONICS ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://www.fmal.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm. 3102, Bund Center, No.222 Yan An Road (E),

Shanghai 200002, China

Tel : +86-21-6146-3688 Fax : +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

Korea

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road,

Tsimshatsui, Kowloon, Hong Kong

Tel : +852-2377-0226 Fax : +852-2376-3269

http://cn.fujitsu.com/fmc/en/

FUJITSU MICROELECTRONICS KOREA LTD.

206 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fmk/

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating

the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to

the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear

facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon

system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited: Sales Promotion Department


型号：	MB39C007EVB-06
厂家：	FUJITSU
描述：	2 ch DC/DC Converter IC Built-in Switching FET & voltage detection function, PFM/PWM Synchronous Rectification, and Down Conversion Support 2通道DC / DC转换器IC内置开关FET和电压检测功能， PFM / PWM同步整流降压转换支持转换器开关
文件：	总52页 (文件大小：846K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MB39C007EVB-06 [FUJITSU]

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