MB39C015WQN_技术文档

FUJITSU SEMICONDUCTOR

DATA SHEET

DS04-27254-3E

ASSP for Power Management Applications

2 ch DC/DC Converter IC Built-in

SwitchingFET, SynchronousRectification, and

Down Conversion Support

MB39C015

■ DESCRIPTION

The MB39C015 is a current mode type 2-channel DC/DC converter IC built-in voltage detection, synchronous

rectifier, and down conversion support. The device is integrated with a switching FET, oscillator, error am-

plifier, PWM control circuit, reference voltage source, and voltage detection circuit.

External inductor and decoupling capacitor are needed only for the external component.

As combining with external parts enables a DC/DC converter with a compact and high load response

characteristic, this is suitable as the built-in power supply for such as mobile phone/PDA, DVDs, and HDDs.

■ FEATURES

• High efficiency

: 96% (Max)

• Output current (DC/DC)

• Input voltage range

• Operating frequency

• No flyback diode needed

• Low dropout operation

• Built-in high-precision reference voltage generator : 1.30 V 2%

• Consumption current in shutdown mode

• Built-in switching FET

: 800 mA/ch (Max)

: 2.5 V to 5.5 V

: 2.0 MHz (Typ)

: For 100% on duty

: 1 μA or less

: P-ch MOS 0.3 Ω (Typ) N-ch MOS 0.2 Ω (Typ)

• High speed for input and load transient response in the current mode

• Over temperature protection

• Packaged in a compact package

: QFN-24

■ APPLICATIONS

• Flash ROMs

• MP3 players

• Electronic dictionary devices

• Surveillance cameras

• Portable GPS navigators

• DVD drives

• IP phones

• Network hubs

• Mobile phones

etc.

2011.1

MB39C015

■ PIN ASSIGNMENT

(Top View)

LX2 DGND2 DGND2 DGND1 DGND1 LX1

18

17

16

15

14

13

DVDD2

DVDD1

OUT1

12

11

10

9

19

20

21

22

23

24

DVDD2

OUT2

MODE2

MODE1

VREFIN2

VREFIN1

8

7

XPOR

VDET

1

2

3

4

5

6

CTLP CTL2 CTL1 AGND AVDD VREF

(LCC-24P-M10)

2

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MB39C015

■ PIN DESCRIPTIONS

Pin No.

Pin Name

I/O

Description

Voltage detection circuit block control input pin.

(L : Voltage detection function stop, H : Normal operation)

1

CTLP

I

DC/DC converter block control input pin.

(L : Shut down, H : Normal operation)

2/3

CTL2/CTL1

I

4

5

AGND

AVDD

⎯

O

I

Control block ground pin.

Control block power supply pin.

Reference voltage output pin.

Voltage detection input pin.

6

VREF

7

VDET

8/23

9/22

10/21

VREFIN1/VREFIN2

MODE1/MODE2

OUT1/OUT2

I

Error amplifier (Error Amp) non-inverted input pin.

Use pin at L level or leave open.

Output voltage feedback pin.

I

11, 12/

19, 20

DVDD1/DVDD2

LX1/LX2

⎯

O

Drive block power supply pin.

Inductor connection output pin.

High impedance during shut down.

13/18

14, 15/

16, 17

DGND1/DGND2

XPOR

⎯

O

Drive block ground pin.

VDET circuit output pin.

Connected to an N-ch MOS open drain circuit.

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3

MB39C015

■ I/O PIN EQUIVALENT CIRCUIT DIAGRAM

VDD

∗

LX1, LX2

VREF

GND

VDD

GND

∗

VREFIN1

VREFIN2

VDET

,

OUT1

,

OUT2

GND

VDD

CTL1, CTL2, CTLP

∗

GND

VDD

XPOR

∗

MODE1

MODE2

,

GND

* : ESD Protection device

GND

4

DS04-27254-3E

MB39C015

■ BLOCK DIAGRAM

VIN

AVDD

ERR

DVDD1

DVDD2

5

11, 12 19, 20

CTL1

3

ON/OFF

OUT1

10

×3

Amplifier

DVDD1

−

+

IOUT

Comparator

VREFIN1

8

9

DAC

PWM

Logic

LX1

VOUT1

13

Control

MODE1

GND

V^IN

CTLP

VDET

1

7

ON/OFF

24

−

+

XPOR

1.30 V

V^REF

VREF

6

2

CTL2

OUT2

ON/OFF

ERR

Amplifier

×3

DVDD2

21

−

+

I

OUT

Comparator

VREFIN2

23

PWM

Logic

LX2

VOUT2

18

Control

MODE2

GND

22

4

16, 17

DGND2

14, 15

DGND1

AGND

DS04-27254-3E

5

MB39C015

• Current mode

• Original voltage mode type :

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Reference triangular wave (V^TRI)

• Current mode type :

Instead of the triangular wave (V^TRI), the voltage (VIDET) obtained through I-V conversion of the sum of

currents that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (V^C) obtained through negative feedback of the output voltage by Error Amp

- Voltage (VIDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular

wave generation circuit) and SW FET

Voltage mode type model

Current mode type model

VIN

Oscillator

−

S

Vc

+

Vc

Q

R

+

VTRI

VIDET

−

SR-FF

Vc

VIDET

VTRI

Vc

ton

toff

ton

Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.

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MB39C015

■ FUNCTION OF EACH BLOCK

• PWM Logic control circuit

The built-in P-ch and N-ch MOS FETs are controlled for synchronization rectification according to the fre-

quency (2.0 MHz) oscillated from the built-in oscillator (square wave oscillation circuit).

• I^OUTComparator circuit

This circuit detects the current (ILX) which flows to the external inductor from the built-in P-ch MOS FET.

By comparing VIDET obtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the

built-in P-ch MOS FET is turned off via the PWM Logic Control circuit.

• Error Amp phase compensation circuit

This circuit compares the output voltage to reference voltages such as VREF. This IC has a built-in phase

compensation circuit that is designed to optimize the operation of this IC.

This needs neither to be considered nor addition of a phase compensation circuit and an external phase

compensation device.

• VREF circuit

A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is

1.30 V (Typ).

• Voltage Detection (VDET) circuit

The voltage detection circuit monitors the voltage at the VDET pin. Normally, use the XPOR pin through pull-

up with an external resistor. When the V^DETpin voltage reaches 0.6 V, it reaches the H level.

Timing chart example : (XPOR pin pulled up to VIN)

VIN

VUVLO

CTLP

VTHHPR

VTHLPR

VDET

XPOR

VUVLO : UVLO threshold voltage

VTHHPR, VTHLPR : XPOR threshold voltage

• Protection circuit

This IC has a built-in over-temperature protection circuit.

The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction

temperature reaches + 135 °C. When the junction temperature comes down to + 110 °C, the switching FET

is returned to the normal operation. Since the PWM control circuit of this IC is in the control method in current

mode, the current peak value is also monitored and controlled as required.

DS04-27254-3E

7

MB39C015

• Function table

Input

CTL2

Output

MODE

VDET

function

VREF

function

CTL1

CTLP CH1 function CH2 function

Shutdown mode

Operating mode

L

Stopped

H

L

Operation

Stopped

Operation

Stopped

Operation

Stopped

Operation

Stopped

H

L

H

L

Operation

Stopped

H

L

H

L

Operation

Stopped

Outputs 1.3 V

H

Operation

H

Operation

8

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MB39C015

■ ABSOLUTE MAXIMUM RATINGS

Rating

Parameter

Symbol

Condition

Unit

Min

−0.3

Max

+6.0

Power supply voltage

V^DD

AVDD = DVDD1 = DVDD2

V

OUT1/OUT2 pins

VDD + 0.3

CTLP, CTL1/CTL2,

MODE1/MODE2 pins

−0.3

V^DD+ 0.3

Signal input voltage

V^ISIG

V

VREFIN1/VREFIN2 pins

VDET pin

−0.3

⎯

V^DD+ 0.3

VDD + 0.3

+6.0

XPOR pull-up voltage

LX voltage

V^IXPOR

V^LX

XPOR pin

V

A

LX1/LX2 pins

ILX1/ILX2

VDD + 0.3

1.8

LX Peak current

IPK

⎯

3125*¹, *², *³

1563*¹, *², *⁴

1250*¹, *², *³

625*¹, *², *⁴

Ta ≤ +25 °C

Ta = +85 °C

mW

⎯

Power dissipation

P^D

⎯

Operating ambient

temperature

Ta

⎯

−40

−55

+85

°C

Storage temperature

T^STG

+125

*1 : Power dissipation value between + 25 °C and + 85 °C is obtained by connecting these two points with

straight line.

*2 : When mounted on a four-layer epoxy board of 11.7 cm × 8.4 cm

*3 : Connection at exposure pad with thermal via. (Thermal via 9 holes)

*4 : Connection at exposure pad, without a thermal via.

Notes: • The use of negative voltages below − 0.3 V to the AGND, DGND1, and DGND2 pin may create parasitic

transistors on LSI lines, which can cause abnormal operation.

•ThisdevicecanbedamagediftheLX1pinandLX2pinareshort-circuitedtoAVDDandDVDD1/DVDD2,

or AGND and DGND1/DGND2.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

DS04-27254-3E

9

MB39C015

■ RECOMMENDED OPERATING CONDITIONS

Value

Typ

3.7

⎯

Parameter

Symbol

Condition

Unit

Min

2.5

0.15

0

Max

5.5

Power supply voltage

VREFIN voltage

CTL voltage

V^DD

VREFIN

V^CTL

I^LX

AVDD = DVDD1 = DVDD2

V

⎯

CTLP, CTL1, CTL2

ILX1/ILX2

1.30

5.0

⎯

V

LX current

⎯

800

mA

2.5 V ≤ AVDD = DVDD1 =

⎯

0.5

1

DVDD2 < 3.0 V

VREF output current

I^ROUT

mA

3.0 V ≤ AVDD = DVDD1 =

DVDD2 ≤ 5.5 V

XPOR current

Inductor value

I^POR

L

⎯

1

mA

2.2

⎯

μH

Note : The output current from this device has a situation to decrease if the power supply voltage (VIN) and the

DC/DC converter output voltage (V^OUT) differ only by a small amount. This is a result of slope compen-

sation and will not damage this device.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of

the semiconductor device. All of the device's electrical characteristics are warranted when the

device is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

onthedatasheet.Usersconsideringapplicationoutsidethelistedconditionsareadvisedtocontact

their representatives beforehand.

10

DS04-27254-3E

MB39C015

■ ELECTRICAL CHARACTERISTICS

(Ta = +25 °C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V)

Value

Sym-

Parameter

Input current

Pin No.

Condition

Unit

bol

Min

Typ

Max

+ 100 nA

I^REFIN

8, 23 VREFIN = 0.15 V to 1.3 V − 100

0

VREFIN = 0.833 V,

2.45

Output voltage

Input stability

Load stability

VOUT

LINE

LOAD

2.50

⎯

2.55

10

V

OUT = −100 mA

2.5 V ≤ AVDD = DVDD1 =

⎯

mV

DVDD2 ≤ 5.5 V*¹

10, 21

−100 mA ≥ OUT ≥

−800 mA

⎯

10

OUT pin input

impedance

R^OUT

I^PK

OUT = 2.0 V

0.6

0.9

1.6

1.0

1.2

2.0

1.5

1.7

2.4

MΩ

A

LX Peak current

Output shorted to GND

13, 18

Oscillation

frequency

DC/DC

converter

block

fosc

⎯

MHz

C1/C2 = 4.7 μF, OUT =

0 A, OUT1/OUT2 : 0 →

90% V^OUT

2, 3,

10, 21

Rise delay time

t^PG

⎯

45

80

μs

SW NMOS-FET

OFF voltage

V^NOFF

R^ONP

⎯

− 10*

⎯

mV

SW PMOS-FET

ON resistance

LX1/LX2 = −100 mA

0.30

0.48

Ω

SW NMOS-FET

ON resistance

13, 18

R^ONN

I^LEAKM

ILEAKH

LX1/LX2 = −100 mA

0 ≤ LX ≤ VDD*²

⎯

0.20

⎯

0.42

Ω

− 1.0

− 2.0

+ 8.0

μA

LX leak current

VDD = 5.5 V, 0 ≤ LX ≤

⎯

+ 16.0 μA

VDD*²

Overheating

protection

(Junction Temp.)

T^OTPH

T^OTPL

+ 120* + 135* + 160* °C

⎯

+ 95*

+ 110* + 125* °C

Protection

circuit

block

VTHHUV

2.17

2.03

2.30

2.15

2.43

2.27

V

UVLO threshold

voltage

⎯

5, 11,

12, 19,

20

V^THLUV

UVLO

hysteresis width

V^HYSUV

0.08

0.15

0.25

V

V^THHPR

575

558

600

583

625

608

mV

XPOR threshold

voltage

V^THLPR

7

Voltage

XPOR

V^HYSPR

⎯

XPOR = 25 μA

XPOR = 5.5 V

⎯

17

⎯

mV

V

detection hysteresis width

circuit

block

XPOR output

voltage

VOL

0.1

1.0

24

XPOR output

current

I^OH

μA

* : Standard design value

DS04-27254-3E

(Continued)

11

MB39C015

(Continued)

(Ta = +25 °C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V)

Value

Parameter

Symbol Pin No.

Condition

Unit

Min

0.55

0.40

Typ

0.95

0.80

Max

1.45

1.30

V^THHCT

⎯

V

CTL threshold

voltage

Control

block

VTHLCT

1, 2, 3

CTL pin

input current

0 V ≤ CTLP/CTL1/CTL2 ≤

I^ICTL

⎯

1.0

μA

V

3.7 V

VREF voltage

VREF

VREF = 0 mA

1.274 1.300 1.326

Reference

voltage

block

6

VREF Load

stability

L^OADREF

VREF = −1.0 mA

⎯

20

mV

CTLP/CTL1/CTL2 = 0 V

I^VDD1

1.0

μA

State of all circuits OFF*³

Shut down

power supply

current

CTLP/CTL1/CTL2 = 0 V,

VDD = 5.5 V

IVDD1H

⎯

1.0

State of all circuits OFF*³

1. CTLP = 0 V, CTL1 =

3.7 V,

CTL2 = 0 V

I^VDD31

⎯

3.5

10

mA

Power supply

current

(DC/DC mode)

2. CTLP = 0 V, CTL1 = 0 V,

CTL2 = 3.7 V

OUT = 0 A

5, 11,

General

12, 19,

20

CTLP = 0 V, CTL1/CTL2 =

3.7 V, OUT = 0 A

I^VDD32

⎯

7.0

15

20.0 mA

Power supply

current

(voltagedetection

mode)

CTLP = 3.7 V,

CTL1/CTL2 = 0 V,

IVDD5

24

μA

1. CTL1 = 3.7 V, CTL2 =

0 V

Power-on

invalid current

2. CTL1 = 0 V, CTL2 =

3.7 V

IVDD

⎯

1000 2000 μA

VOUT1/VOUT2 = 90%

OUT = 0 A*⁴

*1 : The minimum value of AVDD = DVDD1 = DVDD2 is the 2.5 V or VOUT setting value + 0.6 V, whichever is

higher.

*2 : The + leak at the LX1 pin and LX2 pin includes the current of the internal circuit.

*3 : Sum of the current flowing into the AVDD, the DVDD1, and the DVDD2 pins.

*4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive

current is not included because the device is in full ON state (no switching operation). Also the load current

is not included.

12

DS04-27254-3E

MB39C015

■ TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS

MB39C015

VDD

V

DD

SW

VIN

CTL1/CTL2

DVDD1/DVDD2

C2

4.7 μF

R1

1 MΩ

AVDD

MODE1/MODE2

C3

4.7 μF

L1

2.2 μH

LX1/LX2

VOUT1/

VOUT2

VREF

VDET

R5

510 kΩ

R3-1

OUT1/OUT2

20 kΩ

R6

100 kΩ

I

OUT

C1

4.7 μF

R3-2

150 kΩ

DGND1/DGND2

VREFIN1/VREFIN2

AGND

C6

0.1 μF

GND

R4

300 kΩ

Output voltage = VREFIN × 3.01

Component

Specification

Vendor

Part Number

Remarks

R1

1 MΩ

KOA

RK73G1JTTD D 1 MΩ

R3-1

R3-2

20 kΩ

SSM

RR0816-203-D

RR0816-154-D

VOUT1/VOUT2 = 2.5 V

Setting

150 kΩ

R4

R5

R6

C1

C2

C3

300 kΩ

510 kΩ

100 kΩ

4.7 μF

0.1 μF

SSM

KOA

SSM

TDK

RR0816-304-D

RK73G1JTTD D 510 kΩ

RR0816-104-D

C2012JB1A475K

C1608JB1E104K

For adjusting slow start

time

C6

L1

0.1 μF

2.2 μH

TDK

C1608JB1H104K

VLF4012AT-2R2M

Note : These components are recommended based on the operating tests authorized.

TDK : TDK Corporation

SSM : SUSUMU Co., Ltd

KOA : KOA Corporation

DS04-27254-3E

13

MB39C015

■ APPLICATION NOTES

[1] Selection of components

• Selection of an external inductor

Basically it dose not need to design inductor. This IC is designed to operate efficiently with a 2.2 μH inductor.

The inductor should be rated for a saturation current higher than the LX peak current value during normal

operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)

LX peak current value I^PKis obtained by the following formula.

V^IN− VOUT

D

1

2

(V^IN− VOUT) × VOUT

2 × L × fosc × VIN

I^PK= IOUT +

×

= IOUT +

L

fosc

L

: External inductor value

: Load current

I^OUT

V^IN

: Power supply voltage

V^OUT: Output setting voltage

: ON-duty to be switched ( = VOUT/VIN)

fosc : Switching frequency (2.0 MHz)

D

ex) When V^IN= 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 μH, fosc = 2.0 MHz

The maximum peak current value IPK;

(V^IN− VOUT) × VOUT

(3.7 V − 2.5 V) × 2.5 V

IPK = IOUT +

= 0.8 A +

=: 0.89 A

2 × L × fosc × V^IN

2 × 2.2 μH × 2.0 MHz × 3.7 V

• I/O capacitor selection

• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from

ripple currents.

• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor

current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output

equal to the amount of variation multiplied by the ESR value. The output capacitor value has a significant

impact on the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU

SEMICONDUCTOR generally recommends a 4.7 μF capacitor, or a larger capacitor value can be used if

ripple voltages are not suitable. If the V^IN/VOUT voltage difference is within 0.6 V, the use of a 10 μF output

capacitor value is recommended.

• Types of capacitors

Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,

power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating

( − 80% to + 20%) . FUJITSU SEMICONDUCTOR recommends capacitors with the B-temperature rating

(

10% to 20%).

Normal electrolytic capacitors are not recommended due to their high ESR.

Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when

damaged. If you insist on using a tantalum capacitor, FUJITSU SEMICONDUCTOR recommends the type

with an internal fuse.

14

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MB39C015

[2] Output voltage setting

The output voltage V^OUT(VOUT1 or VOUT2) of this IC is defined by the voltage input to VREFIN (VREFIN1 or

VREFIN2) . Supply the voltage for inputting to VREFIN from an external power supply, or set the VREF

output by dividing it with resistors.

The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in

the following formula.

R2

V^OUT= 3.01 × VREFIN,

(V^REF= 1.30 V)

VREFIN =

× VREF

R1 + R2

MB39C015

VREF

R1

VREFIN

R2

Note : Refer to “■ APPLICATION CIRCUIT EXAMPLES” for the an example of this circuit.

Although the output voltage is defined according to the dividing ratio of resistance, select the resistance

value so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .

[3] About conversion efficiency

The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.

The total loss (P^LOSS) of the DC/DC converter is roughly divided as follows :

P^LOSS= PCONT + PSW + PC

PCONT : Control system circuit loss (The power used for this IC to operate, including the gate driving

power for internal SW FETs)

P^SW

P^C

: Switching loss (The loss caused during switching of the IC's internal SW FETs)

: Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and

external circuits )

The IC's control circuit loss (P^CONT) is extremely small, less than 100 mW (with no load).

As the IC contains FETs which can switch faster with less power, the continuity loss (PC) is more predominant

as the loss during heavy-load operation than the control circuit loss (P^CONT) and switching loss (PSW) .

Furthermore, the continuity loss (P^C) is divided roughly into the loss by internal SW FET ON-resistance and

by external inductor series resistance.

2

P^C= IOUT × (RDC + D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

DS04-27254-3E

15

MB39C015

RONP : Internal P-ch SW FET ON resistance

R^ONN: Internal N-ch SW FET ON resistance

RDC : External inductor series resistance

I^OUT

: Load current

The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency

by selecting components.

[4] Power dissipation and heat considerations

The IC is so efficient that no consideration is required in most cases. However, if the IC is used at a low

power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration

for higher efficiency.

The internal loss (P) is roughly obtained from the following formula :

2

P = I^OUT× (D × RONP + (1 − D) × RONN)

D

: Switching ON-duty cycle ( = V^OUT/ VIN)

R^ONP: Internal P-ch SW FET ON resistance

R^ONN: Internal N-ch SW FET ON resistance

I^OUT

: Output current

The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching

loss and the control circuit loss as well but they are so small compared to the continuity loss they can be

ignored.

In this IC with R^ONPgreater than RONN, the larger the on-duty cycle, the greater the loss.

When assuming V^IN= 3.7 V, Ta = + 70 °C, for example, RONP = 0.36 Ω and RONN = 0.30 Ω according to

thegraph“MOSFETONresistancevs. Operatingambienttemperature”. TheIC'sinternallossPis123mWat

VOUT = 2.5 V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”,

the power dissipation at an operating ambient temperature Ta of + 70 °C is 300 mW and the internal loss

is smaller than the power dissipation.

16

DS04-27254-3E

MB39C015

[5] XPOR threshold voltage setting [VPORH, VPORL]

Set the detection voltage by applying voltage to the VDET pin via an external resistor calculated according

to this formula.

R3 + R4

VPORH =

× VTHHPR

× VTHLPR

R4

R3 + R4

R4

V^PORL=

V^THHPR= 0.600 V

V^THLPR= 0.583 V

Example for setting detection voltage to 3.7 V

R3 = 510 kΩ

R4 = 100 kΩ

510 kΩ + 100 kΩ

V^PORH=

× 0.600 = 3.66=: 3.7 [V]

100 kΩ

510 kΩ + 100 kΩ

100 kΩ

V^PORL=

× 0.583 = 3.56=: 3.6 [V]

VIN

MB39C015

AVDD

R3

1 MΩ

VDET

XPOR

R4

XPOR

DS04-27254-3E

17

MB39C015

[6] Transient response

Normally, I^OUTis suddenly changed while VIN and VOUT are maintained constant, responsiveness including

the response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an

optimized design, it shows good transient response characteristics. However, if ringing upon sudden change

of the load is high due to the operating conditions, add capacitor C6 (e.g. 0.1 μF). (Since this capacitor C6

changes the start time, check the start waveform as well.) This action is not required for DAC input.

MB39C015

VREF

R1

VREFIN

VREFIN1/

VREFIN2

R2

C6

18

DS04-27254-3E

MB39C015

[7] Board layout, design example

The board layout needs to be designed to ensure the stable operation of this IC.

Follow the procedure below for designing the layout.

• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a through

hole (TH) near the pins of this capacitor if the board has planes for power and GND.

• Large AC currents flow between this IC and the input capacitor (Cin), output capacitor (Co), and external

inductor (L). Group these components as close as possible to this IC to reduce the overall loop area

occupied by this group. Also try to mount these components on the same surface and arrange wiring

without through hole wiring. Use thick, short, and straight routes to wire the net (The layout by planes is

recommended.).

• Arrange a bypass capacitor for AVDD as close as possible to both the AVDD and AGND pins. Make a

through hole (TH) near the pins of this capacitor if the board has planes for power and GND.

• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor

(Co). The OUT pin is extremely sensitive and should thus be kept wired away from the LX1 and pin LX2

pin of this IC as far as possible.

• If applying voltage to the VREFIN1/VREFIN2 pins through dividing resistors, arrange the resistors so that

the wiring can be kept as short as possible. Also arrange them so that the GND pin of VREFIN1/VREFIN2

resistor is close to the IC's AGND pin. Further, provide a GND exclusively for the control line so that the

resistor can be connected via a path that does not carry current. If installing a bypass capacitor for the

VREFIN, put it close to the VREFIN pin.

• If applying voltage to the VDET pin through dividing resistors, arrange the resistors so that the wiring can

be kept as short as possible. Also arrange so that the GND pin of the VDET resistor is close to the IC's

AGND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected

via a path that does not carry current.

• Try to make a GND plane on the surface to which this IC will be mounted. For efficient heat dissipation

when using the QFN-24 package, FUJITSU SEMICONDUCTOR recommends providing a thermal via in

the footprint of the thermal pad.

• Example of arranging IC SW system parts

Co

L

GND

Cin

VIN

Feedback line

1pin

GND

VIN

AVDD bypass capacitor

DS04-27254-3E

19

MB39C015

• Notes for circuit design

The switching operation of this IC works by monitoring and controlling the peak current which, incidentally,

serves as a form of short-circuit protection. However, do not leave the output short-circuited for long periods

of time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the inductor)

tends to rise. Leaving in the short-circuit state, the temperature of this IC will continue rising and activate

the thermal protection.

Once the thermal protection stops the output, the temperature of the IC will go down and operation will be

restarted, after which the output will repeat the starting and stopping.

Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect

the peripherals surrounding it.

20

DS04-27254-3E

MB39C015

■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS

(Shown below is an example of characteristics for connection according to “■ TEST CIRCUIT FOR MEA-

SURING TYPICAL OPERATING CHARACTERISTICS”.)

• Characteristics CH1

Conversion efficiency vs. Load current

100

V^IN= 3.7 V

90

VIN = 3.7 V

80

V^IN= 3.0 V

70

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

60

50

40

30

20

10

0

V^IN= 4.2 V

60

50

40

30

20

10

0

VIN = 5.0 V

Ta = +25 °C

1.2 V

Ta = +25 °C

2.5 V

VOUT

=

VOUT

=

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

Conversion efficiency vs. Load current

100

V^IN= 3.7 V

VIN = 3.7 V

90

80

70

60

50

40

30

20

10

0

80

V^IN= 3.0 V

VIN = 4.2 V

70

V^IN= 4.2 V

60

VIN = 5.0 V

50

VIN = 5.0 V

40

30

20

Ta = +25 °C

3.3 V

10

0

VOUT

=

1.8 V

VOUT

=

1

10

100

1000

1

10

100

1000

Load current IOUT (mA)

(Continued)

DS04-27254-3E

21

MB39C015

Output voltage vs. Load current

Output voltage vs. Input voltage

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

2.60

2.58

2.56

2.54

2.52

2.50

2.48

2.46

2.44

2.42

2.40

Ta = +25 °C

V^IN= 3.7 V

V^OUT= 2.5 V setting

VOUT = 2.5 V setting

IOUT

= 0 A

IOUT

=

100 mA

2.0

3.0

4.0

5.0

6.0

0

200

400

600

800

Input voltage VIN (V)

Load current IOUT (mA)

Reference voltage vs. Operating

ambient temperature

Reference voltage vs. Input voltage

1.40

1.38

1.36

1.34

1.32

1.30

1.28

1.26

1.24

1.22

1.20

1.40

V^IN= 3.7 V

VOUT = 2.5 V

I^OUT= 0 V

1.38

1.36

1.34

1.32

1.30

1.28

1.26

1.24

1.22

1.20

Ta = +25 °C

2.5 V

V

OUT

=

I

OUT

= 0 A

I

OUT

= 100 mA

−50

0

+50

+100

2.0

3.0

4.0

5.0

6.0

Operating ambient temperature Ta ( °C)

Input voltage VIN (V)

(Continued)

22

DS04-27254-3E

MB39C015

Input current vs. Input voltage

Input current vs. Operating ambient

temperature

10

9

8

7

6

5

4

3

2

1

0

10

9

8

7

6

5

4

3

2

1

0

Ta = +25 °C

V

IN

=

3.7 V

2.5 V

VOUT

=

2.5 V

OUT

=

−50

+50

+100

2.0

3.0

4.0

5.0

6.0

0

Input voltage V^IN(V)

Oscillation frequency vs. Input voltage

Operating ambient temperature Ta ( °C)

Oscillation frequency vs. Operating

ambient temperature

2.4

Ta = +25 °C

V

IN

=

3.7 V

2.5 V

100 mA

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

V

OUT = 1.8 V

2.3

2.2

2.1

2.0

1.9

1.8

1.7

OUT

=

I

OUT = 100 mA

IOUT

=

1.6

−

2.0

3.0

4.0

5.0

6.0

50

+50

+100

0

Operating ambient temperature Ta ( °C)

Input voltage V^IN(V)

(Continued)

DS04-27254-3E

23

MB39C015

MOS FET ON resistance vs.

Input voltage

0.6

0.5

0.4

0.3

0.2

0.1

0

P-ch

N-ch

Ta = +25 °C

2.0

3.0

4.0

5.0

6.0

Input voltage VIN (V)

N-ch MOS FET ON resistance vs.

Operating ambient temperature

P-ch MOS FET ON resistance vs.

Operating ambient temperature

0.6

0.5

0.4

0.3

0.2

0.1

0

0.6

0.5

0.4

0.3

0.2

0.1

0

V = 3.7 V

IN

V = 3.7 V

IN

V = 5.5 V

IN

V

IN

=

5.5 V

+50

−

50

0

+100

−

50

0

+50

+100

Operating ambient temperature Ta ( °C)

(Continued)

24

DS04-27254-3E

MB39C015

(Continued)

CTL threshold voltage VTH vs. Input voltage

XPOR output voltage VXPOR vs. Input voltage

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

6.0

Ta = +25 °C

5.0

V

THHCT

V^PORH= 3.7 V setting

V

THLCT

4.0

3.0

2.0

Ta = +25 °C

2.5 V

V

OUT

=

VXPORL

VXPORH

1.0

0.0

VTHHCT : Circuit OFF → ON

VTHLCT : Circuit ON → OFF

2.0

3.0

4.0

5.0

6.0

2.0

3.0

4.0

5.0

6.0

Input voltage V^IN(V)

Input voltage VIN (V)

Power dissipation vs. Operating

ambient temperature

Power dissipation vs. Operating

ambient temperature

(with thermal via)

(without thermal via)

3500

3000

2500

2000

1500

1000

500

3500

3000

2500

2000

1500

1000

500

3125

1563

1250

625

0

+85

+100

+85

+100

−50

0

+50

−50

0

+50

Operating ambient temperature Ta ( °C)

DS04-27254-3E

25

MB39C015

• Switching waveforms

V

OUT : 20 mV/div

VLX : 2.0 V/div

I

LX : 500 mA/div

Ta = +25 °C

V

IN = 3.7 V

OUT = 2.5 V

1 μs/div

I

OUT = 800 mA

26

DS04-27254-3E

MB39C015

• Startup waveform

VCTL : 5.0 V/div

I

LX : 500 mA/div

Ta = +25 °C

V^IN= 3.7 V

V^OUT= 2.5 V

IOUT = 0 A

VREFIN capacitor value =

0.1 μF

VOUT : 1.0 V/div

10 ms/div

V

CTL : 2.0 V/div

I

LX : 500 mA/div

Ta = +25 °C

V^IN= 3.7 V

V^OUT= 2.5 V

IOUT = 0 A

VOUT : 1.0 V/div

No VREFIN capacitor

10 μs/div

DS04-27254-3E

27

MB39C015

• Output waveforms at sudden load changes (0 mA ↔ 800 mA)

IOUT = 0 mA

IOUT = 800 mA

IOUT = 0 mA

VOUT : 100 mV/div

Ta = +25 °C

VIN = 3.7 V

VOUT = 2.5 V

VREFIN capacitor value =

0.1 μF

10 μs/div

• Output waveforms at sudden load changes (100 mA ↔ 800 mA)

IOUT

= 100 mA

IOUT

= 100 mA

I

OUT

= 800 mA

VOUT : 100 mV/div

Ta = +25 °C

V

IN = 3.7 V

OUT = 2.5 V

VREFIN capacitor value =

0.1 μF

10 μs/div

28

DS04-27254-3E

MB39C015

■ APPLICATION CIRCUIT EXAMPLES

• APPLICATION CIRCUIT EXAMPLE 1

• An external voltage is input to the reference voltage external input (VREFIN1, VREFIN2) , and the V^OUT

voltage is set to 3.01 times the VOUT setting gain.

C3

4.7 μF

VIN

11

12

DVDD1

3

CTL1

CPU

R7

DGND1 14

15

1 MΩ

C4

4.7 μF

19

20

DVDD2

DGND2

8

2

16

17

VREFIN1

CTL2

DAC1

5

4

AVDD

AGND

C5

0.1 μF

R8

1 MΩ

MB39C015

L1

2.2 μH

23

VREFIN2

DAC2

V

OUT1

13

10

LX1

C1

4.7 μF

OUT1

APLI1

9

MODE1

MODE2

L2

2.2 μH

22

VOUT2

18

21

LX2

C2

4.7 μF

6

VREF

OUT2

APLI2

7

1

VDET

CTLP

24

XPOR

V

OUT = 3.01 × VREFIN

DS04-27254-3E

29

MB39C015

• APPLICATION CIRCUIT EXAMPLE 2

• The voltage of VREF pin is input to the reference voltage external input (VREFIN1, VREFIN2) by dividing

resistors. The V^OUT1voltage is set to 2.5 V and VOUT2 voltage is set to 1.8 V.

C3

4.7 μF

VIN

11

12

DVDD1

3

CTL1

CPU

R7

DGND1 14

15

1 MΩ

C4

4.7 μF

19

20

DVDD2

DGND2

R1 170 kΩ

( 20 kΩ + 150 kΩ )

16

17

8

2

VREFIN1

R2

300 kΩ

5

4

AVDD

AGND

C5

0.1 μF

CTL2

R8

1 MΩ

MB39C015

L1

2.2 μH

VOUT1

13

10

LX1

R5 352 kΩ

( 22 kΩ + 330 kΩ )

C1

23

6

VREFIN2

4.7 μF

OUT1

R6

APLI1

300 kΩ

VREF

L2

2.2 μH

VOUT2

18

21

LX2

9

MODE1

MODE2

C2

4.7 μF

22

OUT2

APLI2

1

CTLP

XPOR 24

V^OUT1= 3.01 × VREFIN1

R2

VREFIN1 =

× V^REF

R1 + R2

(VREF = 1.30 V)

300 kΩ

170 kΩ + 300 kΩ

VOUT1 = 3.01 ×

× 1.30 V = 2.5 V

× 1.30 V = 1.8 V

300 kΩ

352 kΩ + 300 kΩ

VOUT12 = 3.01 ×

30

DS04-27254-3E

MB39C015

• APPLICATION CIRCUIT EXAMPLE COMPONENTS LIST

Component

Item

Part Number

VLF4012AT-2R2M

MIPW3226D2R2M

VLF4012AT-2R2M

MIPW3226D2R2M

C2012JB1A475K

C1608JB1E104K

Specification

2.2 μH, RDC = 76 mΩ

2.2 μH, RDC = 100 mΩ

2.2 μH, RDC = 76 mΩ

2.2 μH, RDC = 100 mΩ

4.7 μF (10 V)

Package Vendor

SMD

2012

TDK

FDK

TDK

FDK

TDK

L1

Inductor

L2

C1

C2

C3

C4

C5

Ceramic capacitor

4.7 μF (10 V)

0.1 μF (50 V)

RK73G1JTTD D 20 kΩ 20 kΩ

RK73G1JTTD D 150 kΩ 150 kΩ

1608

KOA

R1

R2

R5

Resistor

RK73G1JTTD D 300 kΩ 300 kΩ

1608

KOA

RK73G1JTTD D 22 kΩ 22 kΩ

RK73G1JTTD D 330 kΩ 330 kΩ

1608

KOA

R6

R7

R8

Resistor

RK73G1JTTD D 300 kΩ 300 kΩ

1608

KOA

RK73G1JTTD D 1 MΩ 1 MΩ 0.5%

TDK : TDK Corporation

FDK : FDK Corporation

KOA : KOA Corporation

DS04-27254-3E

31

MB39C015

■ USAGE PRECAUTIONS

1. Do not configure the IC over the maximum ratings

If the lC is used over the maximum ratings, the LSl may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside

of these conditions adversely affect the reliability of the LSI.

2. Use the devices within recommended operating conditions

The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common

impedance

4. Take appropriate static electricity measures

• Containers for semiconductor materials should have anti-static protection or be made of conductive ma-

terial.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

5. Do not apply negative voltages

The use of negative voltages below −0.3 V may create parasitic transistors on LSI lines, which can cause

abnormal operation.

32

DS04-27254-3E

MB39C015

■ ORDERING INFORMATION

Part number

Package

Remarks

24-pin plastic QFN

(LCC-24P-M10)

MB39C015WQN

Exposed PAD

DS04-27254-3E

33

MB39C015

■ RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB),

and polybrominated diphenyl ethers (PBDE).

A product whose part number has trailing characters “E1” is RoHS compliant.

■ MARKING FORMAT (LEAD FREE VERSION)

39C015

Lead-free version(E1)

XE1

XXXXXX

INDEX

■ LABELING SAMPLE (LEAD FREE VERSION)

Lead-free mark

JEITA logo

JEDEC logo

MB123456P - 789 - GE1

(3N) 1MB123456P-789-GE1 1000

G

Pb

(3N)2 1561190005 107210

QC PASS

PCS

1,000

MB123456P - 789 - GE1

ASSEMBLED IN JAPAN

2006/03/01

MB123456P - 789 - GE1

1/1

1561190005

0605 - Z01A 1000

“ASSEMBLED IN CHINA” is printed on the label

of a product assembled in China.

The part number of a lead-free product has

the trailing characters “E1”.

34

DS04-27254-3E

MB39C015

■ EVALUATION BOARD SPECIFICATION

The MB39C015 Evaluation Board provides the proper for evaluating the efficiency and other characteristics

of the MB39C015.

• Terminal information

Symbol

Functions

Power supply terminal

In standard condition 3.1 V to 5.5 V*

VIN

* : When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices

with a standard output voltage (VOUT1 = 2.5 V) when VIN < 3.1 V, FUJITSU SEMI-

CONDUCTOR recommends changing the output capacity (C1, C2) to 10 μF.

Output terminals

(VOUT1: CH1, VOUT2: CH2)

VOUT1, VOUT2

VCTL

Power supply terminal for setting the CTL1, CTL2 and CTLP terminals.

Use by connecting with CTL1,CTL2 and CTLP.

Direct supply terminal of CTL (CTL1 : for CH1, CTL2 : for CH2)

CTL1, CTL2

CTL1, CTL2 = 0 V to 0.8 V (Typ.)

: Shutdown

CTL1, CTL2 = 0.95 V (Typ.) to VIN (5 V Max) : Normal operation

TEST terminal

MODE1, MODE2 = OPEN or GND

MODE1, MODE2

VREF

Reference voltage output terminal

VREF = 1.30 V (Typ.)

External reference voltage input terminals

(VREFIN1 : for CH1, VREFIN2 : for CH2)

When an external reference voltage is supplied, connect it to the terminal for each chan-

nel.

VREFIN1, VREFIN2

VDET

CTLP

Voltage input terminal for voltage detection

Voltage detection circuit block control terminal

CTLP = L : Voltage detection circuit block stop

CTLP = H : Normal operation

Voltage detection circuit output terminal

The N-ch MOS open drain circuit is connected.

XPOR

VXPOR

Pull-up voltage terminal for the XPOR terminal

Ground terminal

Connect power supply GND to the PGND terminal next to the VIN terminal.

Connect output (load) GND to the PGND terminal between the VOUT1 terminal and the

VOUT2 terminal.

PGND

AGND

Ground terminal

DS04-27254-3E

35

MB39C015

• Startup terminal information

Terminal name

Condition

Functions

ON/OFF switch for CH1

L : Shutdown

H : Normal operation.

L : Open

H : Connect to VCTL

CTL1

ON/OFF switch for CH2

L : Shutdown

H : Normal operation.

L : Open

H : Connect to VCTL

CTL2

CTLP

ON/OFF switch for the voltage detection block

L: Stops the voltage detection circuit

H: Normal operation.

L : Open

H : Connect to VCTL

• Jumper information

JP

Functions

Short-circuited in the layout pattern of the board (normally used shorted).

Normally used shorted (0 Ω)

JP1

JP2

JP3

JP6

Normally used shorted (0 Ω)

• Setup and checkup

(1) Setup

1. Connect the CTL1 terminal and the CTL2 terminal to the VCTL terminal.

2. Put it into “L” state by connecting the CTLP terminal to the AGND pad.

3. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the

PGND terminal. Make sure PGND is connected to the PGND terminal next to the VIN terminal.

(Example of setting power-supply voltage : 3.7 V)

(2) Checkup

Supply power to VIN. The IC is operating normally if VOUT1 = 2.5 V (Typ) and VOUT2 = 1.8 V (Typ).

36

DS04-27254-3E

MB39C015

• Component layout on the evaluation board (Top View)

C2

C1

C3

VOUT2

PGND

VOUT1

L1

MODE2

VREFIN2

XPOR

PGND

L2

C4

VIN

M1

C7

R5

C6

R2

C5

R4 - 1

R9

R7

R6 - 2

R6 - 1

MODE1

VREFIN1

JP6

AGND

JP3

SW1

R1 - 3

VCTL

VREF

Short

R3

VXPOR

Open

MB39C015EVB-06

Rev.1.0

CTL2

CTL1

CTLP

VDET

R8

R10

Top Side (Component side)

Bottom Side (Soldering side)

DS04-27254-3E

37

MB39C015

• Evaluation board layout (Top View)

Top Side (Layer1)

Inside GND (Layer2)

Inside VIN & GND (Layer3)

Bottom Side (Layer4)

38

DS04-27254-3E

MB39C015

• Connection diagram

IIN

VIN

PGND

JP3

SW1*

11

12

DVDD1

DGND1

DVDD2

DGND2

C3

C4

VCTL

CTL1

3

9

CTL1

R8

14

15

SW1*

19

20

MODE1

16

17

MODE1

VREF

JP6

R6-1 R6-2

R7

AVDD

AGND

5

4

8

VREFIN1

C5

VREFIN1

C6

AGND

MB39C015

SW1*

2

CTL2

R9

IOUT

L1

CTL2

13

10

LX1

VOUT1

C1

22

MODE2

JP1

OUT1

MODE2

VREF

PGND

IOUT

R4-1 R4-2

R5

L2

23

6

VREFIN2

VREF

C7

18

LX2

VOUT2

C2

JP2

VREF

OUT2 21

VREF

VIN

R1-3

VXPOR

XPOR

VDET

7

1

VDET

CTLP

R1-1

SW1*

R1-2

R3

R2

24

XPOR

R10

CTLP

*

Not mounted

DS04-27254-3E

39

MB39C015

• Component list

COMPO-

VEN-

DOR

RE-

MARK

Part Name

MODEL NUMBER

MB39C015WQN

SPECIFICATION PACKAGE

NENT

M1

IC

⎯

QFN-24

SMD

FSL

2.2 μH,

L1

L2

Inductor

VLF4012AT-2R2M

TDK

RDC = 76 mΩ

2.2 μH,

RDC = 76 mΩ

Inductor

VLF4012AT-2R2M

SMD

TDK

C1

C2

Ceramic capacitor C2012JB1A475K

Ceramic capacitor C1608JB1H104K

4.7 μF (10 V)

0.1 μF (50 V)

50 mΩ Max, 1 A

300 kΩ 0.5%

50 mΩ Max, 1 A

75 kΩ 0.5%

2012

1608

TDK

KOA

SSM

KOA

SSM

KOA

SSM

KOA

C3

C4

C5

C6

C7

R1-1

R1-2

R1-3

R2

Jumper

Resistor

Jumper

Resistor

RK73Z1J

RR0816P-304-D

RK73Z1J

RR0816P-753-D

R3

RK73G1JTTD D 1 MΩ 1 MΩ 0.5%

R4-1

R4-2

R5

RR0816P-223-D

RR0816P-334-D

RR0816P-304-D

RR0816P-203-D

RR0816P-154-D

RR0816P-304-D

22 kΩ 0.5%

330 kΩ 0.5%

300 kΩ 0.5%

20 kΩ 0.5%

150 kΩ 0.5%

300 kΩ 0.5%

R6-1

R6-2

R7

R8

RK73G1JTTD D 1 MΩ 1 MΩ 0.5%

R9

R10

Not

mounted

SW1

JP1

JP2

Switch

Jumper

⎯

Pattern-

shorted

Pattern-

shorted

JP3

JP6

Jumper

RK73Z1J

50 mΩ Max, 1 A

1608

KOA

Note : These components are recommended based on the operating tests authorized.

FSL : FUJITSU SEMICONDUCTOR LIMITED

TDK : TDK Corporation

KOA : KOA Corporation

SSM : SUSUMU Co., Ltd

40

DS04-27254-3E

MB39C015

■ EV BOARD ORDERING INFORMATION

EV Board Part No.

EV Board Version No.

MB39C015EVB-06 Rev.1.0

Remarks

MB39C015EVB-06

QFN-24

DS04-27254-3E

41

MB39C015

■ PACKAGE DIMENSION

24-pin plastic QFN

Lead pitch

0.50 mm

4.00 mm × 4.00 mm

Plastic mold

0.80 mm Max

0.04 g

Package width ×

package length

Sealing method

Mounting height

Weight

(LCC-24P-M10)

24-pin plastic QFN

(LCC-24P-M10)

2.60 0.10

(.102 .004)

4.00 0.10

(.157 .004)

2.60 0.10

(.102 .004)

4.00 0.10

(.157 .004)

0.25 0.05

(.010 .002)

INDEX AREA

0.40 0.05

(.016 .002)

1PIN CORNER

(C0.35(C.014))

0.50(.020)

TYP

0.75 0.05

(.030 .002)

(0.20(.008))

0.02 ⁺^–0⁰^.^.⁰⁰²³

+.001

(.001

)

–.001

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

C

2009-2010 FUJITSU SEMICONDUCTOR LIMITED C24060S-c-1-2

Please check the latest package dimension at the following URL.

http://edevice.fujitsu.com/package/en-search/

42

DS04-27254-3E

MB39C015

■ CONTENTS

page

- DESCRIPTION .................................................................................................................................................... 1

- FEATURES .......................................................................................................................................................... 1

- APPLICATIONS .................................................................................................................................................. 1

- PIN ASSIGNMENT ............................................................................................................................................. 2

- PIN DESCRIPTIONS .......................................................................................................................................... 3

- I/O PIN EQUIVALENT CIRCUIT DIAGRAM ................................................................................................... 4

- BLOCK DIAGRAM .............................................................................................................................................. 5

- FUNCTION OF EACH BLOCK ......................................................................................................................... 7

- ABSOLUTE MAXIMUM RATINGS ................................................................................................................... 9

- RECOMMENDED OPERATING CONDITIONS ............................................................................................ 10

- ELECTRICAL CHARACTERISTICS ................................................................................................................ 11

- TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ................................ 13

- APPLICATION NOTES ...................................................................................................................................... 14

- EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ............................................................... 21

- APPLICATION CIRCUIT EXAMPLES ............................................................................................................. 29

- USAGE PRECAUTIONS ................................................................................................................................... 32

- ORDERING INFORMATION ............................................................................................................................. 33

- RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .................................................. 34

- MARKING FORMAT (LEAD FREE VERSION) .............................................................................................. 34

- LABELING SAMPLE (LEAD FREE VERSION) ............................................................................................. 34

- EVALUATION BOARD SPECIFICATION ....................................................................................................... 35

- EV BOARD ORDERING INFORMATION ....................................................................................................... 41

- PACKAGE DIMENSION .................................................................................................................................... 42

DS04-27254-3E

43

MB39C015

FUJITSU SEMICONDUCTOR LIMITED

Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,

Kohoku-ku Yokohama Kanagawa 222-0033, Japan

Tel: +81-45-415-5858

http://jp.fujitsu.com/fsl/en/

For further information please contact:

North and South America

Asia Pacific

FUJITSU SEMICONDUCTOR AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://us.fujitsu.com/micro/

FUJITSU SEMICONDUCTOR ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://www.fujitsu.com/sg/services/micro/semiconductor/

Europe

FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.

Rm. 3102, Bund Center, No.222 Yan An Road (E),

Shanghai 200002, China

Tel : +86-21-6146-3688 Fax : +86-21-6335-1605

http://cn.fujitsu.com/fss/

FUJITSU SEMICONDUCTOR EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/semiconductor/

Korea

FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road,

Tsimshatsui, Kowloon, Hong Kong

Tel : +852-2377-0226 Fax : +852-2376-3269

http://cn.fujitsu.com/fsp/

FUJITSU SEMICONDUCTOR KOREA LTD.

206 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fmk/

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does

not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating

the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any

third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right

by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or

other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect

to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in

nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in

weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages aris-

ing in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures

by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-

current levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations

of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited: Sales Promotion Department


型号：	MB39C015WQN
厂家：	FUJITSU
描述：	Switching Regulator, Current-mode, 0.8A, 2400kHz Switching Freq-Max, PQCC24 开关
文件：	总44页 (文件大小：1894K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MB39C015WQN [FUJITSU]

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