2SK3556-01SJ [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3556-01SJ |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
250
Unit
V
Drain-source voltage
VDSX *5
ID
220
±25
±100
±30
25
V
Continuous drain current
Pulsed drain current
A
Equivalent circuit schematic
ID(puls]
VGS
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
A
EAS*1
372
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
2.02
Gate(G)
135
Source(S)
Operating and storage
temperature range
+150
-55 to +150
°C
°C
<
Tstg
<
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
<
*4 VDS 250V *5 VGS=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID=250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
V
250
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=250V VGS=0V
VDS=200V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
100
IGSS
RDS(on)
gfs
VDS=0V
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
10
75
ID=12.5A
VGS=10V
mΩ
S
8
16
ID=12.5A VDS=25V
VDS=75V
Ciss
pF
2000
220
15
3000
330
30
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=72V ID=12.5A
VGS=10V
20
30
30
45
td(off)
tf
Turn-off time toff
60
90
RGS=10 Ω
20
30
QG
QGS
QGD
IAV
VCC=72V
ID=12A
nC
Total Gate Charge
44
66
Gate-Source Charge
Gate-Drain Charge
14
21
VGS=10V
16
24
µ
L=100 H Tch=25°C
25
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs
1.10
1.65
V
0.45
1.5
µs
µC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.926
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
200
175
150
125
100
75
100
80
60
40
20
0
20V
10V
8V
7.5V
7.0V
6.5V
6.0V
50
25
VGS=5.5V
10 12
0
0
25
50
75
100
125
150
0
2
4
6
8
VDS [V]
Tc [°C]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
0.25
0.20
0.15
0.10
0.05
0.00
270
240
210
180
150
120
90
VGS=
5.5V
6.0V
6.5V
7.0V
7.5V
8V
10V
20V
max.
typ.
60
30
0
0
20
40
60
ID [A]
80
100
-50
-25
0
25
50
75
100 125 150
Tch [°C]
2
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=25A, Tch=25°C
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
max.
min.
Vcc= 36V
72V
96V
6
4
2
0
-50
-25
0
25
50
75
100 125 150
0
10
20
30
40
50
60
Qg [nC]
Tch [°C]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
10-1
10-2
100
10
1
Ciss
Coss
Crss
102
0.1
10-1
100
101
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
103
102
101
100
tf
td(off)
tr
td(on)
10-1
100
101
102
ID [A]
3
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=48V
102
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
tAV [sec]
10-4
10-3
10-2
Outline Drawings (mm)
Type(S)
Type(L)
Type(SJ)
See Note: 1.
See Note: 1.
Trademark
4
See Note: 1.
Trademark
Fig. 1.
Fig. 1.
Trademark
Lot No.
Lot No.
Lot No.
Type name
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
CONNECTION
1
2
3
GATE
GATE
1
2
3
4
DRAIN
SOURCE
DRAIN
SOURCE
4
Solder Plating
Solder Plating
Pre-Solder
CONNECTION
Pre-Solder
Notes
Notes
1
2
3
GATE
1. ( ) : Reference dimensions.
1. ( ) : Reference dimensions.
1
2
3
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Note: 1. Guaranteed mark of
avalanche ruggedness.
DRAIN
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
SOURCE
Note: 1. Guaranteed mark of
avalanche ruggedness.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4
相关型号：
2SK3559
Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TOP3F-B1, 3 PIN
PANASONIC
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