2SK3789-01R [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET型号: | 2SK3789-01R |
厂家: | FUJI ELECTRIC |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3789-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
150
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
V
VDSX
ID
150
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
92
A
ID(puls]
VGS
IAR
±368
±30
Gate(G)
V
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
A
92
Note *1
Note *2
Source(S)
mJ
EAS
1205.7
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=37A,L=1.29mH,
mJ
EAR
41
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and avalanch current.
kV/µs
dVDS/dt
dV/dt
PD
20
5
<
VDS 150V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
210
3.13
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
150
µ
V
ID= 250 A
3.0
5.0
25
µA
Tch=25°C
VDS=150V VGS=0V
Zero Gate Voltage Drain Current
IDSS
250
100
26
Tch=125°C
VDS=120V VGS=0V
VGS=±30V
VDS=0V
ID=46A VGS=10V
ID=46A VDS=25V
VDS=75V
IGSS
RDS(on)
gfs
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
21
24
mΩ
S
12
Ciss
Coss
Crss
td(on)
tr
3800
530
35
5400
795
pF
Output Capacitance
VGS=0V
52.5
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
VCC=48V ID=46A
ns
40
60
168
84
VGS=10V
112
56
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
30
45
80
120
45
QG
nC
Total Gate Charge
VCC=75V
ID=92A
30
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
25
38
VGS=10V
1.20
250
2.0
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=92A VGS=0V Tch=25°C
IF=92A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.595 °C/W
Thermal resistance
°C/W
40.0
www.fujielectric.co.jp/fdt/scd
1
2SK3789-01R
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
300
200
100
0
140
120
100
80
20V
10V
8V
60
7V
40
6.5V
20
VGS=6.0V
0
0
25
50
75
100
125
150
0
5
10
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
100
10
1
0.1
0.1
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
0.15 RDS(on)=f(ID):80 µs pulse test,Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=36.5A,VGS=10V
0.15
0.10
0.05
0.00
7V
6.5V
VGS=6V
0.10
0.05
0.00
max.
typ.
8V
10V
20V
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
2
2SK3789-01R
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=92A,Tch=25°C
VGS(th)=f(Tch):VDS=VGS,ID=250µA
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 30V
75V
max.
min.
120V
6
4
2
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
-50
-25
0
25
50
75
100
125
150
Qg [nC]
Tch [°C]
Typical Capacitance
Typical Forward Characteristics of Reverse Diode
C=f(VDS):VGS=0V,f=1MHz
IF=f(VSD):80 µs pulse test,Tch=25°C
104
103
102
101
100
1000
100
10
Ciss
Coss
Crss
1
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10Ω
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=92A
103
102
101
100
1400
1200
1000
800
600
400
200
0
IAS=37A
tr
td(off)
IAS=56A
IAS=92A
td(on)
tf
100
101
102
103
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3789-01R
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 °C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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