6MBI35S-120 [FUJI]
IGBT(1200V/35A);
| 型号： | 6MBI35S-120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT(1200V/35A) 双极性晶体管 |
| 文件： | 总4页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Modules
6MBI35S-120
IGBT MODULE ( S series)
1200V / 35A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
VCES
VGES
IC
Unit
V
Rating
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25°C
Equivalent Circuit Schematic
1200
V
±20
13(P)
A
50
current
Tc=80°C
35
1(G u)
5(G v)
9(G w)
1ms
Tc=25°C IC pulse
Tc=80°C
A
100
70
2(Eu)
6(Ev)
10(Ew)
-IC
A
35
16(U)
15(V)
14(W )
1ms
-IC pulse
A
70
240
3(G x)
4(Ex)
7(G y)
8(Ey)
11(G z)
12(Ez)
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
PC
W
°C
°C
V
Tj
+150
17(N)
Tstg
-40 to +125
AC 2500 (1min.)
3.5
Vis
Screw torque
Mounting *1
N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
1.0
ICES
–
–
–
–
Zero gate voltage collector current
Gate-Emitter leakage current
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
mA
µA
V
IGES
0.2
VGE(th)
VCE(sat)
5.5
7.2
8.5
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
–
–
–
–
–
–
–
–
–
–
–
–
–
2.3
2.8
2.65
Tj=25°C VGE=15V, IC=35A
Tj=125°C
V
–
–
Cies
Coes
Cres
ton
tr
4200
875
770
0.35
0.25
0.1
Input capacitance
VGE=0V
pF
µs
–
Output capacitance
Reverse transfer capacitance
Turn-on time
VCE=10V
–
f=1MHz
1.2
0.6
–
VCC=600V
IC=35A
tr(i)
toff
tf
VGE=±15V
RG=33Ω
0.45
0.08
2.5
1.0
0.3
3.3
–
Turn-off time
VF
Diode forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
IF=35A
IF=35A, VGE=0V
V
2.0
trr
–
0.35
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
IGBT
FWD
–
–
–
–
–
0.52
0.90
–
°C/W
°C/W
°C/W
Thermal resistance
the base to cooling fin
0.05
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI35S-120
IGBT Modules
Characteristics
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Tj= 25 oC (typ.)
80
60
40
20
0
80
60
40
20
0
15V
15V
12V
12V
VGE= 20V
VGE= 20V
10V
10V
8V
8V
0
0
0
1
2
3
:
4
5
0
5
0
1
2
3
:
4
5
Collector - Emitter voltage
VCE [ V ]
Collector - Emitter voltage
VCE [ V ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
80
60
40
20
0
10
8
Tj= 125 o
C
Tj= 25oC
6
4
Ic= 70A
Ic= 35A
2
Ic= 17.5A
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25 oC
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
10000
1000
100
1000
800
600
400
200
0
25
20
15
10
5
Cies
Coes
Cres
0
5
10
15
20
25
30
35
100
200
Gate charge : Qg [ nC ]
300
400
Collector - Emitter voltage
:
VCE [ V ]
6MBI35S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=25oC
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=125oC
1000
500
1000
500
toff
toff
ton
tr
ton
tr
tf
100
50
100
50
tf
0
20
40
Ic [ A ]
60
0
0
0
20
40
60
Collector current
:
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=35A,VGE=±15V, Tj=25oC
Vcc=600V,VGE=±15V, Rg=33Ω
5000
10
8
Eon(125 oC)
1000
500
Eon(25 oC)
6
Eoff(125 oC)
Eoff(25o)C
toff
4
ton
2
tr
tf
Err(125 oC)
Err(25 oC)
100
50
0
10
50
100
Rg
500
20
40
60
Gate resistance
:
[
Ω
]
Collector current : Ic [ A ]
Reverse bias safe operating area
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=35A,VGE=±15V,Tj=125oC
+VGE=15V, -VGE<15V, Rg>33Ω,Tj<125oC
=
=
=
25
20
15
10
5
100
80
60
40
20
0
Eon
Eoff
Err
0
10
50
100
Rg
500
200
400
600
800
1000
1200
1400
Gate resistance
:
[
Ω
]
Collector - Emitter voltage : VCE [ V ]
6MBI35S-120
IGBT Modules
Fo rwa rd c urre nt vs. Fo rwa rd o n vo lta g e (typ .)
Re ve rse re c o ve ry c ha ra c te ristic s (typ .)
Vcc=600V,VGE=±15V, Rg=33Ω
80
60
40
20
0
300
Tj=25 o
C
Tj=125 o
C
trr(125 o C)
trr(25 o C)
100
Irr(125 o C)
Irr(25 o C)
10
0
1
2
3
4
0
10
20
30
40
50
60
Fo rwa rd o n vo lta g e
:
VF [ V ]
Fo rwa rd c urre nt
:
IF [ A ]
Tra nsie nt the rm a l re sista nc e
3
1
FWD
IG BT
0.1
0.01
0.001
0.01
0.1
: Pw [ se c ]
1
Pulse wid th
Outline Drawings, mm
107.5±1
93±0.3
4-ø6.1±0.3
2-ø5.5±0.3
16.02
15.24
15.24
15.24
15.24
17
13
ø2.5±0.1
69.6±0.3
93±0.3
ø2.1±0.1
A
A
Section A-A
ø0.4
1
12
3.81
16.02 11.43 11.43 11.43 11.43 11.43
1.15±0.2
Shows theory dimensions
相关型号：
6MBI35S-I20
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M623, 17 PIN
FUJI
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