YG808C10R [FUJI]
SCHOTTKY BARRIER DIODE(100V / 30A TO-22OF15); 肖特基势垒二极管（ 100V / 30A TO- 22OF15 ）
| 型号： | YG808C10R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE(100V / 30A TO-22OF15) |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG808C10R
(100V / 30A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
10±0.5
1.2±0.2
+0.2
-0
Features
0.6
0.7±0.2
2.7±0.2
2.54±0.2
Low VF
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
Item
Unit
V
100
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
100
1500
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
V
duty=1/2, Tc=80°C
Square wave
IO
30*
Average output current
Surge current
A
IFSM
Tj
Sine wave 10ms
180
A
+150
Operating junction temperature
Storage temperature
°C
°C
Tstg
-40 to +150
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Unit
Symbol
VF
Conditions
IF=10A
Max.
Forward voltage drop **
Reverse current **
Thermal resistance
V
0.80
mA
IR
VR=VRRM
20.0
°C/W
2.0
Rth(j-c)
Junction to case
**Rating per element
Mechanical Characteristics
N · m
g
0.3 to 0.5
2.3
Recommended torque
Mounting torque
Weight
(100V / 30A TO-22OF15)
YG808C10R
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
103
102
101
100
10-1
10-2
100
Tj=150oC
Tj=125oC
Tj=150oC
Tj=100oC
10
Tj=125oC
Tj=100oC
Tj=25oC
1
Tj=25oC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.8 2.0
0
10 20 30 40 50 60 70 80 90 100 110
VF Forward Voltage (V)
VR Reverse Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
28
26
24
22
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
5
Io
360°
DC
λ
VR
360°
α
Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
Square wave λ=180o
DC
α=180o
6
4
2
Per 1element
0
0
0
2
4
6
8
10
12
14
16
0
10 20
30 40 50 60 70 80
90 100 110
Io
Average Forward Current
(A)
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
160
150
140
130
120
110
100
90
1000
100
10
DC
Sine wave =180o
λ
80
Square wave λ=180o
70
Square wave λ=120o
60
50
360°
40
λ
Io
30
Square wave =60o
λ
20
VR=50V
10
0
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
VR
Reverse Voltage (V)
Io:Output current of center-tap full wave connection
YG808C10R
(100V / 30A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
101
100
10-1
10-2
10-3
10-2
10-1
100
101
102
t
Time (sec.)
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