SSF5NS70UG [GOOD-ARK]

700V N-Channel MOSFET;


型号：	SSF5NS70UG
厂家：	GOOD-ARK ELECTRONICS
描述：	700V N-Channel MOSFET
文件：	总7页 (文件大小：1068K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF5NS70UG

700V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(on)

I_D

700V

1.1Ω (typ.)

①

MarkingandPin

Assignment

TO-251(IPAK)

SchematicDiagram

Features and Benefits



High dv/dt and avalanche capabilities

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Lead free product

Description

The SSF5NS70UG series MOSFET is a new technology, which combines an innovative super junction

technology and advance process.This new technology achieves low R_DS(ON), energy saving, high

reliability and uniformity, superior power density and space saving.

Absolute Max Rating

Symbol

Parameter

Max.

5 ①

Units

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ②

3.1①

Power Dissipation ③

W/°C

P_D@TC = 25°C

Linear Derating Factor

0.224

700

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 30

E_AS

Single Pulse Avalanche Energy @ L=100mH

Avalanche Current @ L=100mH

Operating Junction and Storage Temperature Range

I_AS

1.2

T_JT_STG

-55 to +150

°C

www.goodark.com

Page 1 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Thermal Resistance

Symbol

R_θJC

Characteristics

Typ.

—

Max.

4.4

Units

℃/W

Junction-to-case ③

R_θJA

Junction-to-ambient (t ≤ 10s) ④

—

Electrical Characteristics @T_A=25℃ unless otherwise specified

Symbol Parameter

Min.

700

—

Typ.

—

Max.

—

Units

Conditions

V_(BR)DSSDrain-to-Source breakdown voltage

V_GS= 0V, I_D= 250μA

V_GS=10V,I_D= 1A

T_J= 125°C

1.1

2.3

1.25

2.6

—

1.25

—

R_DS(on)

Static Drain-to-Source on-resistance

1.4

—

V_GS=10V,I_D= 2.8A

T_J= 125°C

V_DS= V_GS, I_D= 250μA

T_J= 125°C

V_GS(th)

Gate threshold voltage

—

2.1

—

V_DS=700V,V_GS= 0V

T_J= 125°C

I_DSS

Drain-to-Source leakage current

Gate-to-Source forward leakage

μA

—

100

-100

—

V_GS=30V

I_GSS

—

V_GS= -30V

Q_g

Total gate charge

Gate-to-Source charge

Gate-to-Drain("Miller") charge

Turn-on delay time

Rise time

I_D= 5A,

9.7

1.9

2.3

8.7

5.5

V_DS=200V,

Q_gs

Q_gd

t_d(on)

t_r

—

V_GS= 10V

—

V_GS=10V, V_DS=400V,

R_GEN=10.2Ω,I_D=1.5A

t_d(off)

t_f

Turn-Off delay time

Fall time

—

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Reverse transfer capacitance

—

V_GS= 0V

344

V_DS= 100V

ƒ = 1MHz

—

2.7

Source-Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

(Body Diode)

Min.

Typ.

Max.

Units

Conditions

MOSFET symbol

showing the

I_S

—

5 ①

integral reverse

p-n junction diode.

I_S=2.8A, V_GS=0V

T_J= 25°C, I_F= 1.5A,

di/dt = 100A/μs

Pulsed Source Current

(Body Diode)

I_SM

—

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

0.79

1.2

—

Q_rr

410

—

www.goodark.com

Page 2 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Test Circuits and Waveforms

Switch Waveforms:

Notes:

①Calculated continuous current based on maximum allowable junction temperature.

②Repetitive rating; pulse width limited by max. junction temperature.

③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal

resistance.

④The value of R_θJAis measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a

still air environment with TA =25°C

www.goodark.com

Page 3 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Typical Electrical and Thermal Characteristics

Figure 2. Gate to source cut-off voltage

Figure 1: Typical Output Characteristics

Figure 3. Drain-to-Source Breakdown Voltage Vs.

Case Temperature

Figure 4: Normalized On-Resistance Vs. Case

Temperature

www.goodark.com

Page 4 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Typical Electrical and Thermal Characteristics

Figure 5. Maximum Drain Current Vs. Case

Temperature

Figure 6. Typical Capacitance Vs. Drain-to-Source

Voltage

Figure7. Maximum Effective Transient Thermal Impedance

Junction-to-Case

www.goodark.com

Page 5 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Mechanical Data

TO-251 PACKAGE OUTLINE DIMENSION

Dimension In Millimeters

Dimension In Inches

Min Nom Max

Symbol

Min

2.200

0.950

0.500

0.450

6.450

5.200

5.950

2.240

4.430

9.000

Nom

Max

2.400

1.150

1.250

0.700

0.550

6.750

5.400

6.250

2.340

4.730

9.400

0.087

0.037

0.020

0.018

0.254

0.205

0.234

0.088

0.174

0.354

0.094

0.045

0.049

0.028

0.022

0.266

0.213

0.246

0.092

0.186

0.370

www.goodark.com

Page 6 of 7

Rev.1.0

SSF5NS70UG

700V N-Channel MOSFET

Ordering and Marking Information

Device Marking: SSF5NS70UG

Package (Available)

TO-251(IPAK)

Operating Temperature Range

C : -55 to 150 ºC

Devices per Unit

Package Units/ Tubes/Inner

Units/Inner Inner

Units/Carton

Type

Tube

Box

Boxes/Carton Box

Box

TO-251

4500

225000

Reliability Test Program

Test Item

High

Conditions

T_j=125℃ to 150℃ @

Duration Sample Size

168 hours

500 hours

1000 hours

3 lots x 77 devices

Temperature

Reverse

80% of Max

V_DSS/V_CES/VR

Bias(HTRB)

High

T_j=150℃ @ 100% of

168 hours

500 hours

1000 hours

3 lots x 77 devices

Temperature

Gate

Max V_GSS

Bias(HTGB)

www.goodark.com

Page 7 of 7

Rev.1.0

相关型号：