SSF7607 [GOOD-ARK]
75V N-Channel MOSFET;
| 型号： | SSF7607 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 75V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF7607
75V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
75V
5.5mΩ(typ.)
130A ①
MarkingandPin
Assignment
TO-220
SchematicDiagram
Features and Benefits
AdvancedMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
devicefor useinpower switching applicationandawidevarietyof other applications.
Absolute Max Rating
Symbol
Parameter
Max.
130①
91①
510
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
A
250
W
W/°C
V
Power Dissipation ③
PD @TC = 25°C
Linear Derating Factor
1.6
VDS
Drain-Source Voltage
75
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
390
mJ
A
IAS
51
TJ TSTG
-55 to + 175
°C
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Page 1 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
Characteristics
Typ.
—
Max.
0.61
62
Units
℃/W
℃/W
Junction-to-case ③
RθJA
—
Junction-to-ambient (t ≤ 10s) ④
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
75
—
—
2
Typ.
—
Max.
—
7
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
5.5
9.4
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
V
—
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.6
—
—
1
VDS = 75V,VGS = 0V
TJ = 125℃
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
—
—
—
—
—
—
—
—
—
VGS =20V
IGSS
—
VGS = -20V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
ID = 30A,
147
54
nC
ns
VDS= 30V,
Qgs
Qgd
td(on)
tr
VGS = 10V
43
28
VGS=10V, VDS=30V,
19
RL=15Ω,
GEN=2.5Ω
td(off)
tf
Turn-Off delay time
Fall time
82
R
28
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 0V
VDS = 25V
ƒ = 1MHz
12109
544
331
pF
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
A
130 ①
integral reverse
p-n junction diode.
IS=30A, VGS=0V
TJ = 25°C, IF =75A, di/dt =
100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
510
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.87
53
1.3
—
V
ns
nC
Qrr
—
155
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Page 2 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1.Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4.Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
A
ФP
ϴ
1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
ϴ4
A1
L
c
E
e
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
1.300
2.400
1.270
1.370
Max
Min
Nom
0.051
0.094
0.050
0.054
0.020
0.614
1.130
0.360
0.394
0.400
0.142
0.059
0.1BSC
0.516
Max
A
A1
b
b1
c
-
-
-
-
2.200
2.600
0.087
0.102
-
-
-
-
1.270
1.470
0.050
0.058
-
-
-
-
0.500
-
-
-
-
-
-
-
-
-
-
-
-
D
15.600
28.700
9.150
10.000
10.160
3.600
D1
D2
E
E1
ФP
ФP1
e
9.900
10.100
0.390
0.398
-
-
-
-
-
-
-
-
1.500
2.54BSC
12.900
13.100
13.300
0.508
0.524
L
70
70
30
30
70
70
70
30
-
-
-
-
-
-
-
-
-
-
ϴ1
ϴ2
-
-
50
10
90
50
3
ϴ
4
ϴ
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Page 6 of 7
Rev.1.0
SSF7607
75V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7607
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube
Box
Box
Boxes/Carton Box
Box
TO-220
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 175℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ or 175℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.0
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