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元器件品牌
AP-T01
[GRAYHILL]
Sealed against contamination when properly mounted;
元器件型号：
AP-T01
生产厂家：
GRAYHILL, INC
描述和应用：
Sealed against contamination when properly mounted
PDF文件：
总1页 (文件大小：527K)
下载文档：
下载PDF数据表文档文件
型号参数：AP-T01参数
查看货源
AP-T02
Sealed against contamination when properly mounted
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156
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0
GRAYHILL
APT05DC120HJ
ISOTOP SiC Diode Full Bridge Power Module
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156
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26
MICROSEMI
APT06DC60HJ
ISOTOP SiC Diode Full Bridge Power Module
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156
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11
MICROSEMI
APT1001
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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163
ADPOW
APT1001
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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on line
156
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48
ADPOW
APT100-101DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP
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33
ETC
APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
Warning
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44
ETC
APT1001R1AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Warning
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156
-
35
ADPOW
APT1001R1BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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156
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106
ADPOW
APT1001R1BN-BUTT
暂无描述
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156
-
0
ADPOW
APT1001R1BN-GULLWING
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
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0
ADPOW
APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
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33
ETC
APT1001R1BNR-GULLWING
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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156
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0
MICROSEMI
APT1001R1BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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156
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43
ADPOW
APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
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on line
156
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21
ETC
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