S8543 [HAMAMATSU]

One-dimensional PSD Long, narrow active area and surface mountable package; 一维PSD狭长的有效面积和表面贴装封装
S8543
型号: S8543
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

One-dimensional PSD Long, narrow active area and surface mountable package
一维PSD狭长的有效面积和表面贴装封装

光电 光电器件
文件: 总2页 (文件大小:123K)
中文:  中文翻译
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P S D  
One-dimensional PSD  
S8543  
Long, narrow active area and surface mountable package  
S8543 is a one-dimensional PSD with a long, narrow active area sealed in a surface mountable chip carrier package. The active area of  
0.7 × 24 mm delivers excellent position detection characteristics.  
Hamamatsu also provides L5586 infrared LED compatible with S8543.  
Features  
Applications  
Long, narrow active area: 0.7 × 24 mm  
Chip carrier package for surface mount (t=1.36 mm)  
Excellent position detection characteristic and resolution  
Position detection of optical pickup head  
Distance measurement  
Displacement measurement  
Position detection, etc.  
Absolute maximum ratings (Ta=25 °C)  
Parameter  
Symbol  
Value  
Max.7  
Unit  
V
R
Reverse voltage  
V
Operating temperature  
Storage temperature  
Topr  
Tstg  
-10 to +75  
-20 to +80  
°C  
°C  
Electrical and optical characteristics (Ta=25 °C)  
Parameter  
Spectral response range  
Peak sensitivity wavelength  
Photo sensitivity  
Symbol  
Condition  
Min.  
Typ.  
320 to 1100  
Max.  
-
-
Unit  
nm  
nm  
-
-
-
-
λ
λp  
S
960  
0.  
1
58  
-
A/W  
λ=λp  
D
R
Dark current  
I
V =5 V  
15  
50  
nA  
µs  
L
R
R =1 k, V =5 V  
Rise time  
tr  
-
20  
λ=780 nm, 10 to 90 %  
R
Terminal capacitance  
Interelectrode resistance  
Ct  
Rie  
V =5 V, f=10 kHz  
-
65  
140  
130  
180  
pF  
Vb=0.1 V  
100  
kΩ  
R
λ=900 nm, V =5 V  
Position detection error  
E
-
50  
250  
µm  
φ200 µm *1  
Position resolution  
Saturation photocurrent *3  
Io=1 µA, B=1 kHz *2  
-
0.  
-
6
-
µm  
R  
Ist  
R
V =5 V  
200  
-
µA  
*1: Within 75 % from center to end of active area  
*2: This is the minimum detectable light spot displacement. The detection limit is indicated by the distance on the photosensit ive  
surface. The numerical value of the resolution of a position sensor using a PSD is proportional to both the length of the PSD  
and the noise of the measuring system (resolution deteriorates) and inversely proportional to the photocurrent (incident  
energy) of the PSD (resolution improves). The resolution value listed in this data sheet was calculated under the following  
conditions.  
• Frequency bandwidth: 1 kHz  
• Photocurrent: 1 µA  
• Equivalent input noise voltage of circuit: 1 µV (1 kHz)  
• Interelectrode resistance: Typical value (refer to the specification table)  
*3: This is the upper limit of photocurrent linearity. The upper limit is defined as a point where the photocurrent output deviates  
10 % from the linearity.  
1
One-dimensional PSD S8543  
Spectral response  
Dark current vs. reverse voltage  
(Typ. Ta=25 ˚C)  
(Typ. Ta=25 ˚C)  
0.7  
10 nA  
0.6  
0.5  
0.4  
1 nA  
100 pA  
10 pA  
1 pA  
0.3  
0.2  
0.1  
0
200  
400  
600  
800  
1000  
0.01  
0.1  
1
10  
100  
WAVELENGTH (nm)  
REVERSE VOLTAGE (V)  
KPSDB0019EA  
KPSDB0018EA  
Position detection error  
Terminal capacitance vs. reverse voltage  
(Typ. Ta=25 ˚C, f=10 kHz)  
(Typ. Ta=25 ˚C, λ=900 nm, spot light size: 200 µm)  
10 nF  
+240  
1 nF  
100 pF  
10 pF  
1 pF  
0
-240  
0.01  
0.1  
1
10  
100  
-12 -10 -8 -6 -4 -2  
0
+2 +4 +6 +8 +10 +12  
REVERSE VOLTAGE (V)  
POSITION ON PSD (mm)  
KPSDB0020EA  
KPSDB0021EA  
Dimensional outline (unit: mm)  
ꢀ6.7 0.ꢀ5  
ꢀ0.5 0.ꢀ  
28.5 0.ꢀ  
(1.0)  
1.0+-00.2  
(2.0)  
(R0.25)  
24.0  
Y
X
ACTIVE AREA  
INDEX MARK  
1.4+-00.ꢀ  
PHOTOSENSITIVE  
SURFACE  
DETAILS  
CERAMIC  
(1.0)  
(0.1)  
1.4+-00.ꢀ0  
ANODE (X1)  
CATHODE (COMMON)  
ANODE (X2)  
CATHODE (COMMON)  
KPSDA0058EA  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
Cat. No. KPSD1021E01  
Jan. 2002 DN  
2

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