HMC313_09 [HITTITE]

GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz; 砷化镓的InGaP HBT MMIC宽带放大器增益模块, DC - 6 GHz的
HMC313_09
型号: HMC313_09
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz
砷化镓的InGaP HBT MMIC宽带放大器增益模块, DC - 6 GHz的

放大器
文件: 总6页 (文件大小:211K)
中文:  中文翻译
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HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Typical Applications  
Ideal as a Driver & Amplifier for:  
• 2.2 - 2.7 GHz MMDS  
Features  
P1dB Output Power: +14 dBm  
9
Output IP3: +27 dBm  
• 3.5 GHz Wireless Local Loop  
• 5 - 6 GHz UNII & HiperLAN  
Gain: 17 dB  
Single Supply: +5V  
High Reliability GaAs HBT Process  
Ultra Small Package: SOT26  
Included in the HMC-DK001 Designer’s Kit  
Functional Diagram  
General Description  
The HMC313  
&
HMC313E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC  
amplifiers that operate from a single Vcc supply.  
The surface mount SOT26 amplifier can be used  
as a broadband gain stage or used with external  
matching for optimized narrow band applications.  
With Vcc biased at +5V, the HMC313(E) offers 17 dB  
of gain and +15 dBm of saturated power while only  
requiring 50 mA of current.  
Electrical Specifications, TA = +25 °C, Vcc = +5.0V  
Vcc = +5V  
Parameter  
Units  
Min.  
14  
Typ.  
DC - 6  
17  
Max.  
Frequency Range  
GHz  
dB  
Gain  
20  
Gain Variation Over Temperature  
Input Return Loss  
0.02  
7
0.03  
dB/°C  
dB  
Output Return Loss  
6
dB  
Reverse Isolation  
30  
dB  
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz  
Saturated Output Power (Psat) @ 1.0 GHz  
Output Third Order Intercept (IP3) @ 1.0 GHz  
Noise Figure  
11  
14  
dBm  
dBm  
dBm  
dB  
15  
24  
27  
6.5  
50  
Supply Current (Icc)  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 26  
HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Gain & Return Loss  
Gain vs. Temperature  
25  
25  
9
16  
7
20  
S11  
S21  
S22  
15  
+ 25 C  
+ 85 C  
- 40 C  
-2  
10  
5
-11  
-20  
0
0
1
2
3
4
5
5
5
6
6
6
7
7
7
0
1
2
3
4
5
6
6
6
7
7
7
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input & Output Return Loss  
Reverse Isolation  
0
0
-10  
-20  
-30  
-40  
-50  
-5  
-10  
S11  
S22  
-15  
-20  
0
1
2
3
4
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
P1dB vs. Temperature  
Psat vs. Temperature  
25  
25  
+ 25 C  
+ 85 C  
- 40 C  
+ 25 C  
+ 85 C  
- 40 C  
20  
15  
10  
5
20  
15  
10  
5
0
0
0
1
2
3
4
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 27  
HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Output IP3 vs. Temperature  
Power Compression @ 1 GHz  
20  
40  
35  
30  
25  
20  
9
15  
10  
5
15  
10  
5
+ 25 C  
+ 85 C  
- 40 C  
0
Pout (dBm)  
Gain (dB)  
PAE (%)  
-5  
0
-10  
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2  
INPUT POWER (dBm)  
0
2
4
0
1
2
3
4
5
6
7
FREQUENCY (GHz)  
Power Compression @ 3 GHz  
20  
15  
10  
5
0
Pout (dBm)  
Gain (dB)  
PAE (%)  
-5  
-10  
-22  
-18  
-14  
-10  
-6  
-2  
2
INPUT POWER (dBm)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 28  
HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc)  
RF Input Power (RFIN)(Vcc = +5Vdc)  
Junction Temperature  
+5.5 Vdc  
9
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
+20 dBm  
150 °C  
Continuous Pdiss (T = 85 °C)  
(derate 3.99 mW/°C above 85 °C)  
0.259 W  
Thermal Resistance  
(junction to lead)  
251 °C/W  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
Outline Drawing  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H313  
XXXX  
HMC313  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
313E  
XXXX  
MSL1 [2]  
HMC313E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 29  
HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
9
This pin is DC coupled. An off chip DC blocking capacitor  
is required.  
1
RFOUT  
This pin is DC coupled. An off chip DC blocking capacitor  
is required.  
3
RFIN  
GND  
2, 4-6  
These pins must be connected to RF/DC ground.  
Application Circuit  
Recommended Bias Resistor Values  
for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc  
Supply Voltage (Vs)  
5V  
6V  
8V  
RBIAS VALUE  
0 Ω  
20 Ω  
¼ W  
62 Ω  
½ W  
RBIAS POWER RATING  
Note:  
1. Select Rbias to achieve desired Vcc voltage on Pin 1.  
2. External Blocking Capacitors are required on Pins 1 & 3.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 30  
HMC313 / 313E  
v06.0109  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6 GHz  
Evaluation PCB  
9
List of Materials for Evaluation PCB 104217 [1]  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 ohm impedance while the  
package ground leads should be connected directly  
to the ground plane similar to that shown. A suffi-  
cient number of via holes should be used to connect  
the top and bottom ground planes. The evaluation  
circuit board shown is available from Hittite upon  
request.  
Item  
J1 - J2  
C1 - C2  
C3  
Description  
PCB Mount SMA Connector  
100 pF Capacitor, 0402 Pkg.  
100 pF Capacitor, 0805 Pkg.  
22 nH Inductor, 0805 Pkg.  
22 ꢀ Resistor, 0805 Pkg.  
HMC313 / HMC313E  
L1  
R1  
U1  
[2]  
PCB  
104196 Evaluation PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Arlon 25FR or Roger 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 31  

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