HMC459_07 [HITTITE]
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz; 的GaAs PHEMT MMIC功率放大器， DC - 18 GHz的
| 型号： | HMC459_07 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| 文件： | 总8页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Typical Applications
The HMC459 wideband driver is ideal for:
Features
P1dB Output Power: +25 dBm
Gain: 17 dB
• Telecom Infrastructure
Output IP3: +31.5 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are inter-
nally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 2.0
18.5
0.5
Max.
Min.
Typ.
DC - 6.0
18
Max.
Min.
Typ.
DC - 10.0
17
Max.
Min
Typ
DC - 18.0
12
Max
Units
GHz
dB
Gain
16.5
15
14
9
Gain Flatness
0.75
0.02
19.5
15
0.75
0.03
19
dB
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.02
22
0.03
0.03
0.04
0.035 0.045 dB/ °C
10
14
dB
dB
27
14
Output Power for 1 dB
Compression (P1dB)
21
24
26.5
40
20.5
24.5
26.5
34
22
25
14
17
21
dBm
dBm
dBm
dB
Saturated Output Power (Psat)
26.5
31.5
3.0
Output Third Order Intercept
(IP3)
26
Noise Figure
4.0
4.0
6.5
290
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 40
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
22
21
20
19
18
17
16
15
14
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
13
+25 C
+85 C
-55 C
12
11
10
9
8
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
20
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-55 C
-5
-10
-15
-20
-25
-30
-35
-5
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
Noise Figure vs. Temperature
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
+25 C
+85 C
-55 C
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.00001 0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 41
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Output P1dB vs. Temperature
Output Psat vs. Temperature
30
28
26
24
22
20
30
28
26
24
22
20
+25 C
+85 C
18
18
16
14
12
10
-55 C
+25 C
+85 C
16
14
12
10
-55 C
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Output IP3
vs. Supply Voltage @ 5 GHz, Fixed Vgg
Output IP3 vs. Temperature
44
42
40
38
36
34
32
30
28
36
34
32
GAIN (dB)
P1dB (dBm)
30
PSAT (dBm)
IP3 (dBm)
28
26
24
22
20
18
16
14
26
+25 C
24
22
20
+85 C
-55 C
0
2
4
6
8
10
12
14
16
18
20
7.5
8
8.5
FREQUENCY (GHz)
Vdd SUPPLY VOLTAGE (V)
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
+25 C
+85 C
-55 C
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 42
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
+9 Vdc
Vdd (V)
+7.5
Idd (mA)
292
-2 to 0 Vdc
(Vdd -8) Vdc to Vdd
+16 dBm
+8.0
290
+8.5
288
175 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
4.64 W
Thermal Resistance
(channel to die bottom)
19.4 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
Standard
Alternate
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 43
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
Gate Control 2 for amplifier. +3V should be applied to Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
2
4
Vgg2
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
RFOUT & Vdd
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
5
3
Vgg1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
6
ACG2
GND
Die
Bottom
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 44
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 45
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
0.150mm (0.005”) Thick
Moly Tab
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 46
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 47
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