HMC478MP86_10 [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 4 GHz的
| 型号： | HMC478MP86_10 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
The HMC478MP86 / HMC478MP86E is an ideal RF/
Features
P1dB Output Power: +18 dBm
IF gain block & LO or PA driver:
8
Gain: 22 dB
• Cellular / PCS / 3G
Output IP3: +32 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
General Description
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
The HMC478MP86 & HMC478MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. This
Micro-P packaged amplifier can be used as a cas-
cadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC478MP86(E) offers 22 dB of gain with a
+32 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
0.02
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
19
15
13
11
22
18
16
14
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 4 GHz
0.015
dB/ °C
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
12
13
dB
dB
dB
DC - 1.0 GHz
1.0 - 4.0 GHz
20
17
dB
dB
Output Return Loss
Reverse Isolation
DC - 4 GHz
20
dB
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
15
13
11
9
18
16
14
12
dBm
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
32
29
25
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
3.5
dB
dB
Noise Figure
Supply Current (Icq)
62
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 1
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
20
10
0
30
8
25
20
15
S21
S11
S22
10
-10
-20
-30
+25 C
+85 C
-40 C
5
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-10
-15
-5
-10
-15
-20
-20
+25 C
+85 C
+25 C
+85 C
-40 C
-40 C
-25
-25
-30
-30
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-5
8
7
6
5
4
3
2
1
0
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 2
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
Psat vs. Temperature
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
8
+25 C
+85 C
-40 C
+25C
+85C
-40C
6
6
4
2
0
4
2
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
Output IP3 vs. Temperature
35
36
32
28
24
20
16
30
25
20
12
Gain
+25 C
+85 C
-40 C
P1dB
Psat
OIP3
8
4
15
10
0
0
1
2
3
4
5
5
6
7
8
FREQUENCY (GHz)
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Gain, Power & OIP3 vs. Supply Voltage
Fixed Vs= 5V, RBIAS= 18 Ohms
for Rs = 18 Ohms @ 850 MHz
36
32
28
24
20
16
80
75
70
65
60
55
50
45
40
+85 C
+25 C
12
-40 C
Gain
P1dB
Psat
OIP3
8
4
0
4.5
5
5.5
3.7
3.8
3.9
4
4.1
4.2
4.3
Vcc (Vdc)
Vs (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 3
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +4.3 Vdc)
Junction Temperature
+6.0 Vdc
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
100 mA
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1C
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
478
HMC478MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC478MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
478
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 4
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
8
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
18 Ω
1/8 W
35 Ω
1/4 W
67 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 5
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Evaluation PCB
8
List of Materials for Evaluation PCB 110170 [1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink.
The evaluation circuit board shown is available from
Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC478MP86 / HMC478MP86E
107087 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 6
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