HMC481ST89ETR [HITTITE]
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| 型号： | HMC481ST89ETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | 暂无描述 射频和微波 射频放大器 微波放大器 |
| 文件： | 总6页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Typical Applications
The HMC481ST89 / HMC481ST89E is an ideal RF/IF
Features
P1dB Output Power: +19 dBm
gain block & LO or PA driver for:
8
Gain: 20 dB
• Cellular / PCS / 3G
Output IP3: +33 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kits
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC481ST89
& HMC481ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. Pack-
aged in an industry standard SOT89, the amplifier
can be used as a cascadable 50 Ohm RF/IF gain
stage as well as a LO or PA driver with up to +21 dBm
output power. The HMC481ST89(E) offer 20 dB of
gain with a +33 dBm output IP3 at 1 GHz while
requiring only 79 mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
18
15.5
13
11
9
20
17.5
15
13
11
dB
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
0.008
0.016
dB/ °C
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
12
15
17
27
23
dB
dB
dB
dB
dB
Output Return Loss
Reverse Isolation
18
dB
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 4 GHz
16
15
13
11
9
19
18
16
14
12
33
30
27
25
3.5
4.0
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
4.0 - 5.0 GHz
dB
Supply Current (Icq)
79
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 134
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
24
8
20
16
S21
S11
S22
0
-5
12
-10
-15
-20
-25
-30
-35
-40
+25C
+85C
-40C
8
4
0
0
1
2
3
4
5
6
6
6
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
-5
-10
-15
-20
-25
+85C
-40C
+25C
-10
+85C
-40C
-20
-30
-40
0
1
2
3
4
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
-5
+25C
+85C
-40C
8
6
4
2
0
+25C
+85C
-40C
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 135
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
P1dB vs. Temperature
Psat vs. Temperature
24
24
8
20
16
12
20
16
12
+25C
+85C
-40C
+25C
+85C
-40C
8
4
8
4
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
Output IP3 vs. Temperature
for Constant Icc= 79 mA @ 850 MHz
36
36
30
24
18
33
30
27
Gain
+25C
12
6
24
P1dB
Psat
+85C
-40C
IP3
21
0
18
6
7
8
9
10
11
12
0
1
2
3
4
5
6
Vs (Vdc)
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 39 Ohms
88
+85 C
86
84
82
80
78
76
74
72
70
68
66
+25 C
-40 C
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
Vcc (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 136
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
+6.0 Vdc
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
+10 dBm
150 °C
1.06 W
Continuous Pdiss (T = 85 °C)
(derate 16.3 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
61.4 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H481
XXXX
HMC481ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
H481
XXXX
MSL1 [2]
HMC481ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 137
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
8
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom must be connected to RF/
DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values
for Icc= 79 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
10V
62 Ω
1/2 W
12V
91 Ω
1 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
11 Ω
1/8 W
39 Ω
1/4 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 138
HMC481ST89 / 481ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Evaluation PCB
8
List of Materials for Evaluation PCB 108324 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC481ST89 / HMC481ST89E
107368 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 139
相关型号：
HMC482ST89ETR
Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, ROHS COMPLIANT, PLASTIC, SMT, SOT-89, 4 PIN
HITTITE
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