HMC482ST89E [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 5.0 GHz的
| 型号： | HMC482ST89E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| 文件： | 总6页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Designer’s Kit
Available
5
Typical Applications
The HMC482ST89 / HMC482ST89E is an ideal RF/IF
gain block & LO or PA driver for:
Features
P1dB Output Power: +22 dBm
Gain: 20 dB
• Cellular / PCS / 3G
Output IP3: +36 dBm
• Fixed Wireless, WLAN & WiMAX
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
The HMC482ST89
& HMC482ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. Packaged
in an industry standard SOT89, the amplifier can
be used as a cascadable 50 Ohm RF/IF gain stage
as well as a LO or PA driver with up to +24 dBm out-
put power. The Darlington feedback pair results in
reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 27 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
17
15
12.5
10
19
17
14.5
12
dB
dB
dB
dB
dB
Gain
8
10
Gain Variation Over Temperature
Input Return Loss
DC - 5.0 GHz
0.008
0.016
dB/ °C
DC - 1.0 GHz
1.0 - 5.0 GHz
15
18
dB
dB
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
20
14
12
8
dB
dB
dB
dB
Output Return Loss
Reverse Isolation
DC - 5.0 GHz
16
dB
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
19.5
17
14.5
12.5
10.5
22.5
20
17.5
15.5
13.5
dBm
dBm
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
36
35
32
30
28
dBm
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
4
5
5.5
dB
dB
dB
Noise Figure
Supply Current (Icq)
110
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 474
HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
5
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
24
22
20
18
16
14
12
10
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
8
+25C
+85C
-40C
6
4
2
0
0
1
2
3
4
5
6
6
5
0
1
2
3
4
5
6
7
8
6
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
+25C
+85C
-10
-15
-20
-40C
-10
-15
-20
-25
-30
-25
+25C
+85C
-40C
-30
-35
-40
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-5
8
+25C
+85C
-40C
7
-10
-15
-20
-25
-30
6
5
4
3
2
1
0
+25C
+85C
-40C
0
1
2
3
4
5
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 475
HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
5
P1dB vs. Temperature
Psat vs. Temperature
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
+25C
+85C
-40C
14
12
10
+25C
+85C
-40C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
Output IP3 vs. Temperature
40
38
36
34
32
30
40
36
32
28
24
20
16
28
12
+25C
Gain(dB)
+85C
P1dB(dBm)
8
4
-40C
26
24
Psat(dBm)
OIP3(dBm)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
FREQUENCY (GHz)
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 27 Ohms
128
126
124
122
120
118
116
114
112
110
108
+85C
+25C
-40C
4.6
4.7
4.8
4.9
5
5.1
5.2
Vcc (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +5 Vdc)
Junction Temperature
+6.0 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
+14 dBm
150 °C
0.94 W
Continuous Pdiss (T = 85 °C)
(derate 14.5 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
69 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H482
XXXX
HMC482ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
H482
XXXX
MSL1 [2]
HMC482ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 477
HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom must be connected to
RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
10V
47 Ω
1 W
12V
62 Ω
1.5 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
9.1 Ω
1/4 W
27 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 478
HMC482ST89 / 482ST89E
v02.0106
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 108324 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of VIA holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC482ST89 / HMC482ST89E
107368 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 479
相关型号：
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HITTITE
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