HMC591_09 [HITTITE]
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz; 的GaAs PHEMT MMIC 2瓦功放， 6 - 10 GHz的
| 型号： | HMC591_09 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz |
| 文件： | 总8页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Typical Applications
Features
The HMC591 is ideal for use as a power amplifier for:
Saturated Output Power: +34 dBm @ 24% PAE
• Point-to-Point Radios
Output IP3: +43 dBm
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
Gain: 23 dB
3
DC Supply: +7.0 V @ 1340 mA
50 Ohm Matched Input/Output
2.47 mm x 2.49 mm x 0.1 mm
• Space
Functional Diagram
General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Amplifier which operates from
6 to 10 GHz. This amplifier die provides 23 dB of
gain and +34 dBm of saturated power, at 24% PAE
from a +7.0V supply. Output IP3 is +43 dBm typical.
The RF I/Os are DC blocked and matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All data is taken with the chip in a 50 ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of length 0.31mm (12 mils). For applications
which require optimum OIP3, Idd should be set for 940
mA, to yield +43 dBm OIP3. For applications which
require optimum output P1dB, Idd should be set for
1340 mA, to yield +33 dBm Output P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter
Min.
Typ.
6 - 10
23
Max.
Min.
Typ.
6.8 - 9
23
Max.
Units
GHz
dB
Frequency Range
Gain
20
20
Gain Variation Over Temperature
Input Return Loss
0.05
12
0.05
14
dB/ °C
dB
Output Return Loss
11
10
dB
Output Power for 1 dB
Compression (P1dB)
30
33
30.5
33.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Supply Current (Idd)
33.5
43
34
43
dBm
dBm
mA
1340
1340
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 78
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
25
20
15
10
5
34
32
30
28
26
24
22
20
S21
S11
S22
3
0
-5
-10
-15
-20
-25
18
+25C
+85C
-40C
16
14
12
4
5
6
7
8
9
10
11
12
12
10
6
6.5
7
7.5
8
8.5
9
9.5
10
12
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
-10
-15
-20
-25
-5
-10
-15
+25C
+85C
-40C
-20
-25
4
5
6
7
8
9
10
11
4
5
6
7
8
9
10
11
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
36
36
34
32
30
28
26
34
32
30
28
26
+25C
+85C
-55C
+25C
+85C
-55C
6
6.5
7
7.5
8
8.5
9
9.5
6
6.5
7
7.5
8
8.5
9
9.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 79
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
P1dB vs. Current
Psat vs. Current
36
36
34
32
30
28
26
34
32
3
940 mA
1140 mA
1340 mA
940 mA
1140 mA
1340 mA
30
28
26
6
6.5
7
7.5
8
8.5
9
9.5
10
10
8
6
6.5
7
7.5
8
8.5
9
9.5
10
16
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
Power Compression @ 8 GHz,
7V @ 1340 mA
48
35
Pout
Gain
PAE
30
25
20
15
10
5
44
40
+25C
+85C
-55C
36
32
28
0
6
6.5
7
7.5
8
8.5
9
9.5
-14
-9
-4
1
6
11
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IM3, 7V @ 940 mA
Output IM3, 7V @ 1340 mA
90
90
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
70
50
70
50
30
10
6 GHz
7 GHz
30
8 GHz
9 GHz
10 GHz
10
-20
-16
-12
-8
-4
0
4
-20
-16
-12
-8
-4
0
4
Pin/Tone (dBm)
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 80
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
Gain & Power vs. Supply Current @ 8 GHz
38
38
34
34
GAIN
GAIN
30
30
3
P1dB
P1dB
Psat
Psat
26
26
22
18
22
18
6.5
7
7.5
940
1140
1340
Vdd SUPPLY VOLTAGE (V)
Idd SUPPLY CURRENT (mA)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Power Dissipation
10
0
-10
9
8
-20
+25C
+85C
-40C
-30
6GHz
7GHz
8GHz
9GHz
10GHz
-40
-50
-60
-70
-80
7
6
5
-14
-10
-6
-2
2
6
10
14
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
+6.5
Idd (mA)
Gate Bias Voltage (Vgg)
-2 to 0 Vdc
1355
1340
1325
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
+7.0
Channel Temperature
175 °C
+7.5
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
10.59 W
Thermal Resistance
(channel to die bottom)
8.5 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 81
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Outline Drawing
3
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard
Alternate
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 82
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is AC coupled and
matched to 50 Ohms.
1
RFIN
3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
3 - 5, 7, 8
Vdd 1-5
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
6
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
9
Vgg
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 83
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Assembly Diagram
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 84
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 85
相关型号：
©2020 ICPDF网 联系我们和版权申明