HMC797 [HITTITE]

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz; 的GaAs PHEMT MMIC 1瓦的功放, DC - 22 GHz的
HMC797
型号: HMC797
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
的GaAs PHEMT MMIC 1瓦的功放, DC - 22 GHz的

射频 微波 功率放大器
文件: 总10页 (文件大小:518K)
中文:  中文翻译
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HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Typical Applications  
Features  
Tꢀꢁ hmC797 ꢂꢃ ꢂdꢁaꢉ ꢋꢅꢄ:  
• Tꢁꢃt iꢊꢃtꢄuꢇꢁꢊtatꢂꢅꢊ  
• mꢂcꢄꢅꢆavꢁ radꢂꢅ & VsAT  
• mꢂꢉꢂtaꢄy & sꢈacꢁ  
hꢂgꢀ p1dB outꢈut pꢅꢆꢁꢄ: +28 dBꢇ  
hꢂgꢀ pꢃat outꢈut pꢅꢆꢁꢄ: +31 dBꢇ  
hꢂgꢀ Gaꢂꢊ: 14.5 dB  
3
hꢂgꢀ outꢈut ip3: +40 dBꢇ  
• Tꢁꢉꢁcꢅꢇ iꢊꢋꢄaꢃtꢄuctuꢄꢁ  
• fꢂbꢁꢄ oꢈtꢂcꢃ  
suꢈꢈꢉy Vꢅꢉtagꢁ: +10 V @ 400 ꢇA  
50 oꢀꢇ matcꢀꢁd iꢊꢈut/outꢈut  
Dꢂꢁ sꢂzꢁ: 2.89 x 1.55 x 0.1 ꢇꢇ  
Functional Diagram  
General Description  
Tꢀꢁ hmC797 ꢂꢃ a GaAꢃ mmiC phemT Dꢂꢃtꢄꢂbutꢁd  
pꢅꢆꢁꢄ Aꢇꢈꢉꢂfiꢁꢄ dꢂꢁ ꢆꢀꢂcꢀ ꢅꢈꢁꢄatꢁꢃ bꢁtꢆꢁꢁꢊ DC  
aꢊd 22 Ghz. Tꢀꢁ aꢇꢈꢉꢂfiꢁꢄ ꢈꢄꢅvꢂdꢁꢃ 14.5 dB ꢅꢋ gaꢂꢊ,  
40 dBꢇ ꢅutꢈut ip3 aꢊd +28 dBꢇ ꢅꢋ ꢅutꢈut ꢈꢅꢆꢁꢄ at  
1 dB gaꢂꢊ cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ ꢆꢀꢂꢉꢁ ꢄꢁquꢂꢄꢂꢊg 400ꢇA ꢋꢄꢅꢇ  
a +10V ꢃuꢈꢈꢉy. Tꢀꢂꢃ vꢁꢄꢃatꢂꢉꢁ pA ꢁxꢀꢂbꢂtꢃ a ꢈꢅꢃꢂ-  
tꢂvꢁ gaꢂꢊ ꢃꢉꢅꢈꢁ ꢋꢄꢅꢇ 3 tꢅ 21 Ghz ꢇakꢂꢊg ꢂt ꢂdꢁaꢉ ꢋꢅꢄ  
ew, eCm, radaꢄ aꢊd tꢁꢃt ꢁquꢂꢈꢇꢁꢊt aꢈꢈꢉꢂcatꢂꢅꢊꢃ.  
Tꢀꢁ hmC797 aꢇꢈꢉꢂfiꢁꢄ i/oꢃ aꢄꢁ ꢂꢊtꢁꢄꢊaꢉꢉy ꢇatcꢀꢁd  
tꢅ 50 oꢀꢇꢃ ꢋacꢂꢉꢂtatꢂꢊg ꢂꢊtꢁgꢄatꢂꢅꢊ ꢂꢊtꢅ mutꢉꢂ-Cꢀꢂꢈ-  
mꢅduꢉꢁꢃ (mCmꢃ). Aꢉꢉ data ꢂꢃ takꢁꢊ ꢆꢂtꢀ tꢀꢁ cꢀꢂꢈ  
cꢅꢊꢊꢁctꢁd vꢂa tꢆꢅ 0.025ꢇꢇ (1 ꢇꢂꢉ) ꢆꢂꢄꢁ bꢅꢊdꢃ ꢅꢋ ꢇꢂꢊꢂ-  
ꢇaꢉ ꢉꢁꢊgtꢀ 0.31 ꢇꢇ (12 ꢇꢂꢉꢃ).  
Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA*  
paꢄaꢇꢁtꢁꢄ  
fꢄꢁquꢁꢊcy raꢊgꢁ  
mꢂꢊ.  
Tyꢈ.  
DC - 10  
13.5  
0.5  
max.  
mꢂꢊ.  
Tyꢈ.  
10 - 18  
14.5  
0.7  
max.  
mꢂꢊ.  
Tyꢈ.  
18 - 22  
15.5  
0.4  
max.  
Uꢊꢂtꢃ  
Ghz  
dB  
Gaꢂꢊ  
Gaꢂꢊ fꢉatꢊꢁꢃꢃ  
dB  
Gaꢂꢊ Vaꢄꢂatꢂꢅꢊ ovꢁꢄ Tꢁꢇꢈꢁꢄatuꢄꢁ  
iꢊꢈut rꢁtuꢄꢊ lꢅꢃꢃ  
0.009  
16  
0.01  
17  
0.012  
18  
dB/ °C  
dB  
outꢈut rꢁtuꢄꢊ lꢅꢃꢃ  
16  
18  
17  
dB  
outꢈut pꢅꢆꢁꢄ ꢋꢅꢄ 1 dB Cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ (p1dB)  
satuꢄatꢁd outꢈut pꢅꢆꢁꢄ (pꢃat)  
outꢈut Tꢀꢂꢄd oꢄdꢁꢄ iꢊtꢁꢄcꢁꢈt (ip3)  
nꢅꢂꢃꢁ fꢂguꢄꢁ  
27  
28.5  
31  
27  
28.5  
31  
26.5  
28  
dBꢇ  
dBꢇ  
dBꢇ  
dB  
31  
41  
40  
39  
3.5  
3
3.5  
suꢈꢈꢉy Cuꢄꢄꢁꢊt  
(idd) (Vdd= 10V, Vgg1= -0.8V Tyꢈ.)  
400  
400  
400  
ꢇA  
* Adjust Vgg1 between -2 to 0V to achieve Idd = 400 mA typical.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 1  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Gain & Return Loss  
Gain vs. Temperature  
20  
18  
16  
14  
12  
10  
0
S21  
S11  
S22  
3
-10  
-20  
-30  
10  
+25C  
+85C  
-55C  
8
6
0
5
10  
15  
20  
25  
30  
24  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
+25C  
+85C  
-55C  
-10  
-10  
-20  
-20  
-30  
-40  
+25C  
+85C  
-55C  
-30  
-40  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs. Temperature  
Noise Figure vs. Frequency  
7
0
-10  
6
5
4
3
2
1
0
+25C  
+85C  
-55C  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
0
2
4
6
8
10 12 14 16 18 20 22  
0
4
8
12  
16  
20  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 2  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
P1dB vs. Temperature  
Psat vs. Temperature  
34  
34  
32  
30  
28  
26  
24  
22  
32  
30  
+25C  
+85C  
-55C  
3
28  
+25C  
+85C  
-55C  
26  
24  
22  
0
4
8
12  
16  
20  
24  
24  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
P1dB vs. Vdd  
Psat vs. Vdd  
34  
34  
32  
30  
28  
26  
24  
22  
32  
30  
28  
26  
24  
22  
+10V  
+11V  
+10V  
+11V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output IP3 vs.  
Temperature @ Pout = 18 dBm Tone  
Output IP3 vs. Output Power @ 10 GHz  
50  
50  
300 mA  
350 mA  
45  
40  
35  
45  
400 mA  
40  
35  
30  
25  
+25C  
+85C  
-55C  
30  
25  
0
4
8
12  
16  
20  
10  
12  
14  
16  
18  
20  
22  
24  
FREQUENCY (GHz)  
OUTPUT POWER (dBm)  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 3  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Power Compression @ 2 GHz  
Power Compression @ 10 GHz  
32  
32  
Pout  
28  
24  
28  
24  
20  
16  
12  
8
Pout  
Gain  
PAE  
Gain  
PAE  
20  
16  
12  
8
3
4
4
0
0
0
3
6
9
12  
15  
18  
21  
18  
24  
0
3
6
9
12  
15  
18  
21  
20  
24  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
Power Compression @ 22 GHz  
Power Dissipation  
32  
6
Pout  
Gain  
PAE  
28  
24  
20  
16  
12  
8
5
4
3
2
1
0
Max Pdis @ 85C  
2 GHz  
20 GHz  
4
0
0
3
6
9
12  
15  
0
4
8
12  
16  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
Second Harmonics vs.  
Temperature @ Pout = 18 dBm  
Second Harmonics vs.  
Vdd @ Pout = 18 dBm  
70  
70  
60  
60  
+25C  
+85C  
+8V  
-55C  
50  
50  
40  
30  
20  
10  
0
+10V  
+11V  
40  
30  
20  
10  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
FREQUENCY(GHz)  
FREQUENCY(GHz)  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 4  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Second Harmonics vs.  
Idd @ Pout = 18 dBm  
70  
Second Harmonics vs. Pout  
70  
+12 dBm  
+14 dBm  
60  
60  
+16 dBm  
+18 dBm  
300 mA  
350 mA  
400 mA  
+20 dBm  
50  
40  
30  
20  
10  
0
50  
+22 dBm  
+24 dBm  
3
40  
30  
20  
10  
0
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY(GHz)  
FREQUENCY(GHz)  
Typical Supply Current vs. Vdd  
Absolute Maximum Ratings  
Dꢄaꢂꢊ Bꢂaꢃ Vꢅꢉtagꢁ (Vdd)  
+12 Vdc  
Vdd (V)  
+9  
idd (ꢇA)  
400  
Gatꢁ Bꢂaꢃ Vꢅꢉtagꢁ (Vgg1)  
-3 tꢅ 0 Vdc  
+10  
400  
Vgg2 = (Vdd -6.5V) tꢅ 4.5V. fꢅꢄ  
Vdd <8.5V, Vgg2 ꢇuꢃt ꢄꢁꢇaꢂꢊ >2V  
Gatꢁ Bꢂaꢃ Vꢅꢉtagꢁ (Vgg2)  
+11  
400  
rf iꢊꢈut pꢅꢆꢁꢄ (rfin)  
Cꢀaꢊꢊꢁꢉ Tꢁꢇꢈꢁꢄatuꢄꢁ  
+27 dBꢇ  
150 °C  
Cꢅꢊtꢂꢊuꢅuꢃ pdꢂꢃꢃ (T= 85 °C)  
(dꢁꢄatꢁ 69 ꢇw/°C abꢅvꢁ 85 °C)  
eleCTrosTATiC sensiTiVe DeViCe  
oBserVe hAnDlinG preCAUTions  
4.5 w  
Tꢀꢁꢄꢇaꢉ rꢁꢃꢂꢃtaꢊcꢁ  
(cꢀaꢊꢊꢁꢉ tꢅ dꢂꢁ bꢅttꢅꢇ)  
14.5 °C/w  
outꢈut pꢅꢆꢁꢄ ꢂꢊtꢅ Vswr >7:1  
stꢅꢄagꢁ Tꢁꢇꢈꢁꢄatuꢄꢁ  
29 dBꢇ  
-65 tꢅ 150°C  
-55 tꢅ 85 °C  
oꢈꢁꢄatꢂꢊg Tꢁꢇꢈꢁꢄatuꢄꢁ  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 5  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Outline Drawing  
3
Tꢀꢂꢃ dꢂꢁ utꢂꢉꢂzꢁꢃ ꢋꢄagꢂꢉꢁ aꢂꢄ bꢄꢂdgꢁꢃ. Aꢊy ꢈꢂck-uꢈ tꢅꢅꢉꢃ uꢃꢁd ꢇuꢃt ꢊꢅt cꢅꢊtact tꢀꢁ dꢂꢁ ꢂꢊ tꢀꢁ cꢄꢅꢃꢃ ꢀatcꢀꢁd aꢄꢁa.  
Die Packaging Information [1]  
noTes:  
1. All Dimensions Are in inChes [mm]  
2. Die ThiCKness is .004”  
staꢊdaꢄd  
Aꢉtꢁꢄꢊatꢁ  
3. TYpiCAl BonD pAD is .004” sQUAre  
4. BonD pAD meTAliZATion: GolD  
5. BACKsiDe meTAliZATion: GolD  
6. BACKsiDe meTAl is GroUnD  
7. no ConneCTion reQUireD for UnlABeleD BonD pADs  
8. oVerAll Die siZe .002”  
wp-19 (waꢋꢋꢉꢁ pack)  
[2]  
[1] Refer to the “Packaging Information” section on our  
website for die packaging dimensions.  
[2] For alternate packaging information contact Hittite  
Microwave Corporation.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 6  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Pad Descriptions  
pad nuꢇbꢁꢄ  
fuꢊctꢂꢅꢊ  
Dꢁꢃcꢄꢂꢈtꢂꢅꢊ  
iꢊtꢁꢄꢋacꢁ scꢀꢁꢇatꢂc  
Tꢀꢂꢃ ꢈad ꢂꢃ DC cꢅuꢈꢉꢁd aꢊd ꢇatcꢀꢁd  
tꢅ 50 oꢀꢇꢃ. Bꢉꢅckꢂꢊg caꢈacꢂtꢅꢄ ꢂꢃ ꢄꢁquꢂꢄꢁd.  
1
rfin  
3
Gatꢁ cꢅꢊtꢄꢅꢉ 2 ꢋꢅꢄ aꢇꢈꢉꢂfiꢁꢄ. Attacꢀ byꢈaꢃꢃ  
caꢈacꢂtꢅꢄꢃ ꢈꢁꢄ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ. fꢅꢄ ꢊꢅꢇꢂꢊaꢉ  
ꢅꢈꢁꢄatꢂꢅꢊ +3.5V ꢃꢀꢅuꢉd bꢁ aꢈꢈꢉꢂꢁd tꢅ Vgg2.  
2
VGG2  
lꢅꢆ ꢋꢄꢁquꢁꢊcy tꢁꢄꢇꢂꢊatꢂꢅꢊ. Attacꢀ byꢈaꢃꢃ  
caꢈacꢂtꢅꢄꢃ ꢈꢁꢄ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ.  
4, 7  
3
ACG2, ACG4  
ACG1  
lꢅꢆ ꢋꢄꢁquꢁꢊcy tꢁꢄꢇꢂꢊatꢂꢅꢊ. Attacꢀ byꢈaꢃꢃ  
caꢈacꢂtꢅꢄꢃ ꢈꢁꢄ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ.  
rf ꢅutꢈut ꢋꢅꢄ aꢇꢈꢉꢂfiꢁꢄ. Cꢅꢊꢊꢁct DC bꢂaꢃ (Vdd) ꢊꢁtꢆꢅꢄk tꢅ  
ꢈꢄꢅvꢂdꢁ dꢄaꢂꢊ cuꢄꢄꢁꢊt (idd). sꢁꢁ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ.  
5
rfoUT & VDD  
lꢅꢆ ꢋꢄꢁquꢁꢊcy tꢁꢄꢇꢂꢊatꢂꢅꢊ. Attacꢀ byꢈaꢃꢃ  
caꢈacꢂtꢅꢄ ꢈꢁꢄ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ.  
6
ACG3  
Gatꢁ cꢅꢊtꢄꢅꢉ 1 ꢋꢅꢄ aꢇꢈꢉꢂfiꢁꢄ. Attacꢀ byꢈaꢃꢃ  
caꢈacꢂtꢅꢄ ꢈꢁꢄ aꢈꢈꢉꢂcatꢂꢅꢊ cꢂꢄcuꢂt ꢀꢁꢄꢁꢂꢊ. pꢉꢁaꢃꢁ  
ꢋꢅꢉꢉꢅꢆ “mmiC Aꢇꢈꢉꢂfiꢁꢄ Bꢂaꢃꢂꢊg pꢄꢅcꢁduꢄꢁ”  
aꢈꢈꢉꢂcatꢂꢅꢊ ꢊꢅtꢁ.  
8
VGG1  
GnD  
Dꢂꢁ Bꢅttꢅꢇ  
Dꢂꢁ bꢅttꢅꢇ ꢇuꢃt bꢁ cꢅꢊꢊꢁctꢁd tꢅ rf/DC gꢄꢅuꢊd.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 7  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Assembly Diagram  
3
Application Circuit  
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee  
with low series resistance and capable of providing 500mA  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343  
Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 8  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
Tꢀꢁ dꢂꢁ ꢃꢀꢅuꢉd bꢁ attacꢀꢁd dꢂꢄꢁctꢉy tꢅ tꢀꢁ gꢄꢅuꢊd ꢈꢉaꢊꢁ ꢁutꢁctꢂcaꢉꢉy ꢅꢄ ꢆꢂtꢀ  
cꢅꢊductꢂvꢁ ꢁꢈꢅxy (ꢃꢁꢁ hmC gꢁꢊꢁꢄaꢉ haꢊdꢉꢂꢊg, mꢅuꢊtꢂꢊg, Bꢅꢊdꢂꢊg nꢅtꢁ).  
0.102mm (0.004”) Thick GaAs MMIC  
50 oꢀꢇ mꢂcꢄꢅꢃtꢄꢂꢈ tꢄaꢊꢃꢇꢂꢃꢃꢂꢅꢊ ꢉꢂꢊꢁꢃ ꢅꢊ 0.127ꢇꢇ (5 ꢇꢂꢉ) tꢀꢂck aꢉuꢇꢂꢊa  
tꢀꢂꢊ fiꢉꢇ ꢃubꢃtꢄatꢁꢃ aꢄꢁ ꢄꢁcꢅꢇꢇꢁꢊdꢁd ꢋꢅꢄ bꢄꢂꢊgꢂꢊg rf tꢅ aꢊd ꢋꢄꢅꢇ tꢀꢁ cꢀꢂꢈ  
(fꢂguꢄꢁ 1). iꢋ 0.254ꢇꢇ (10 ꢇꢂꢉ) tꢀꢂck aꢉuꢇꢂꢊa tꢀꢂꢊ fiꢉꢇ ꢃubꢃtꢄatꢁꢃ ꢇuꢃt bꢁ  
uꢃꢁd, tꢀꢁ dꢂꢁ ꢃꢀꢅuꢉd bꢁ ꢄaꢂꢃꢁd 0.150ꢇꢇ (6 ꢇꢂꢉꢃ) ꢃꢅ tꢀat tꢀꢁ ꢃuꢄꢋacꢁ ꢅꢋ  
tꢀꢁ dꢂꢁ ꢂꢃ cꢅꢈꢉaꢊaꢄ ꢆꢂtꢀ tꢀꢁ ꢃuꢄꢋacꢁ ꢅꢋ tꢀꢁ ꢃubꢃtꢄatꢁ. oꢊꢁ ꢆay tꢅ accꢅꢇ-  
ꢈꢉꢂꢃꢀ tꢀꢂꢃ ꢂꢃ tꢅ attacꢀ tꢀꢁ 0.102ꢇꢇ (4 ꢇꢂꢉ) tꢀꢂck dꢂꢁ tꢅ a 0.150ꢇꢇ (6 ꢇꢂꢉ)  
tꢀꢂck ꢇꢅꢉybdꢁꢊuꢇ ꢀꢁat ꢃꢈꢄꢁadꢁꢄ (ꢇꢅꢉy-tab) ꢆꢀꢂcꢀ ꢂꢃ tꢀꢁꢊ attacꢀꢁd tꢅ tꢀꢁ  
gꢄꢅuꢊd ꢈꢉaꢊꢁ (fꢂguꢄꢁ 2).  
Wire Bond  
0.076mm  
(0.003”)  
3
RF Ground Plane  
mꢂcꢄꢅꢃtꢄꢂꢈ ꢃubꢃtꢄatꢁꢃ ꢃꢀꢅuꢉd bꢁ ꢈꢉacꢁd aꢃ cꢉꢅꢃꢁ tꢅ tꢀꢁ dꢂꢁ aꢃ ꢈꢅꢃꢃꢂbꢉꢁ ꢂꢊ  
ꢅꢄdꢁꢄ tꢅ ꢇꢂꢊꢂꢇꢂzꢁ bꢅꢊd ꢆꢂꢄꢁ ꢉꢁꢊgtꢀ. Tyꢈꢂcaꢉ dꢂꢁ-tꢅ-ꢃubꢃtꢄatꢁ ꢃꢈacꢂꢊg ꢂꢃ  
0.076ꢇꢇ tꢅ 0.152 ꢇꢇ (3 tꢅ 6 ꢇꢂꢉꢃ).  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
Figure 1.  
Handling Precautions  
Follow these precautions to avoid permanent damage.  
0.102mm (0.004”) Thick GaAs MMIC  
Storage: Aꢉꢉ baꢄꢁ dꢂꢁ aꢄꢁ ꢈꢉacꢁd ꢂꢊ ꢁꢂtꢀꢁꢄ waꢋꢋꢉꢁ ꢅꢄ Gꢁꢉ baꢃꢁd esD ꢈꢄꢅtꢁc-  
tꢂvꢁ cꢅꢊtaꢂꢊꢁꢄꢃ, aꢊd tꢀꢁꢊ ꢃꢁaꢉꢁd ꢂꢊ aꢊ esD ꢈꢄꢅtꢁctꢂvꢁ bag ꢋꢅꢄ ꢃꢀꢂꢈꢇꢁꢊt.  
oꢊcꢁ tꢀꢁ ꢃꢁaꢉꢁd esD ꢈꢄꢅtꢁctꢂvꢁ bag ꢀaꢃ bꢁꢁꢊ ꢅꢈꢁꢊꢁd, aꢉꢉ dꢂꢁ ꢃꢀꢅuꢉd bꢁ  
ꢃtꢅꢄꢁd ꢂꢊ a dꢄy ꢊꢂtꢄꢅgꢁꢊ ꢁꢊvꢂꢄꢅꢊꢇꢁꢊt.  
Wire Bond  
0.076mm  
(0.003”)  
Cleanliness: haꢊdꢉꢁ tꢀꢁ cꢀꢂꢈꢃ ꢂꢊ a cꢉꢁaꢊ ꢁꢊvꢂꢄꢅꢊꢇꢁꢊt. Do noT attꢁꢇꢈt  
tꢅ cꢉꢁaꢊ tꢀꢁ cꢀꢂꢈ uꢃꢂꢊg ꢉꢂquꢂd cꢉꢁaꢊꢂꢊg ꢃyꢃtꢁꢇꢃ.  
RF Ground Plane  
Static Sensitivity: fꢅꢉꢉꢅꢆ esD ꢈꢄꢁcautꢂꢅꢊꢃ tꢅ ꢈꢄꢅtꢁct agaꢂꢊꢃt esD  
ꢃtꢄꢂkꢁꢃ.  
0.150mm (0.005”) Thick  
Moly Tab  
Transients: suꢈꢈꢄꢁꢃꢃ ꢂꢊꢃtꢄuꢇꢁꢊt aꢊd bꢂaꢃ ꢃuꢈꢈꢉy tꢄaꢊꢃꢂꢁꢊtꢃ ꢆꢀꢂꢉꢁ bꢂaꢃ ꢂꢃ  
aꢈꢈꢉꢂꢁd. Uꢃꢁ ꢃꢀꢂꢁꢉdꢁd ꢃꢂgꢊaꢉ aꢊd bꢂaꢃ cabꢉꢁꢃ tꢅ ꢇꢂꢊꢂꢇꢂzꢁ ꢂꢊductꢂvꢁ ꢈꢂck-  
uꢈ.  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
Figure 2.  
General Handling: haꢊdꢉꢁ tꢀꢁ cꢀꢂꢈ aꢉꢅꢊg tꢀꢁ ꢁdgꢁꢃ ꢆꢂtꢀ a vacuuꢇ cꢅꢉꢉꢁt ꢅꢄ ꢆꢂtꢀ a ꢃꢀaꢄꢈ ꢈaꢂꢄ ꢅꢋ bꢁꢊt tꢆꢁꢁzꢁꢄꢃ. Tꢀꢁ  
ꢃuꢄꢋacꢁ ꢅꢋ tꢀꢁ cꢀꢂꢈ ꢇay ꢀavꢁ ꢋꢄagꢂꢉꢁ aꢂꢄ bꢄꢂdgꢁꢃ aꢊd ꢃꢀꢅuꢉd ꢊꢅt bꢁ tꢅucꢀꢁd ꢆꢂtꢀ vacuuꢇ cꢅꢉꢉꢁt, tꢆꢁꢁzꢁꢄꢃ, ꢅꢄ fiꢊgꢁꢄꢃ.  
Mounting  
Tꢀꢁ cꢀꢂꢈ ꢂꢃ back-ꢇꢁtaꢉꢉꢂzꢁd aꢊd caꢊ bꢁ dꢂꢁ ꢇꢅuꢊtꢁd ꢆꢂtꢀ Ausꢊ ꢁutꢁctꢂc ꢈꢄꢁꢋꢅꢄꢇꢃ ꢅꢄ ꢆꢂtꢀ ꢁꢉꢁctꢄꢂcaꢉꢉy cꢅꢊductꢂvꢁ ꢁꢈꢅxy.  
Tꢀꢁ ꢇꢅuꢊtꢂꢊg ꢃuꢄꢋacꢁ ꢃꢀꢅuꢉd bꢁ cꢉꢁaꢊ aꢊd flat.  
eutꢁctꢂc Dꢂꢁ Attacꢀ: A 80/20 gꢅꢉd tꢂꢊ ꢈꢄꢁꢋꢅꢄꢇ ꢂꢃ ꢄꢁcꢅꢇꢇꢁꢊdꢁd ꢆꢂtꢀ a ꢆꢅꢄk ꢃuꢄꢋacꢁ tꢁꢇꢈꢁꢄatuꢄꢁ ꢅꢋ 255 °C aꢊd a tꢅꢅꢉ  
tꢁꢇꢈꢁꢄatuꢄꢁ ꢅꢋ 265 °C. wꢀꢁꢊ ꢀꢅt 90/10 ꢊꢂtꢄꢅgꢁꢊ/ꢀydꢄꢅgꢁꢊ gaꢃ ꢂꢃ aꢈꢈꢉꢂꢁd, tꢅꢅꢉ tꢂꢈ tꢁꢇꢈꢁꢄatuꢄꢁ ꢃꢀꢅuꢉd bꢁ 290 °C. Do  
noT ꢁxꢈꢅꢃꢁ tꢀꢁ cꢀꢂꢈ tꢅ a tꢁꢇꢈꢁꢄatuꢄꢁ gꢄꢁatꢁꢄ tꢀaꢊ 320 °C ꢋꢅꢄ ꢇꢅꢄꢁ tꢀaꢊ 20 ꢃꢁcꢅꢊdꢃ. nꢅ ꢇꢅꢄꢁ tꢀaꢊ 3 ꢃꢁcꢅꢊdꢃ ꢅꢋ  
ꢃcꢄubbꢂꢊg ꢃꢀꢅuꢉd bꢁ ꢄꢁquꢂꢄꢁd ꢋꢅꢄ attacꢀꢇꢁꢊt.  
eꢈꢅxy Dꢂꢁ Attacꢀ: Aꢈꢈꢉy a ꢇꢂꢊꢂꢇuꢇ aꢇꢅuꢊt ꢅꢋ ꢁꢈꢅxy tꢅ tꢀꢁ ꢇꢅuꢊtꢂꢊg ꢃuꢄꢋacꢁ ꢃꢅ tꢀat a tꢀꢂꢊ ꢁꢈꢅxy fiꢉꢉꢁt ꢂꢃ ꢅbꢃꢁꢄvꢁd  
aꢄꢅuꢊd tꢀꢁ ꢈꢁꢄꢂꢇꢁtꢁꢄ ꢅꢋ tꢀꢁ cꢀꢂꢈ ꢅꢊcꢁ ꢂt ꢂꢃ ꢈꢉacꢁd ꢂꢊtꢅ ꢈꢅꢃꢂtꢂꢅꢊ. Cuꢄꢁ ꢁꢈꢅxy ꢈꢁꢄ tꢀꢁ ꢇaꢊuꢋactuꢄꢁꢄ’ꢃ ꢃcꢀꢁduꢉꢁ.  
Wire Bonding  
rf bꢅꢊdꢃ ꢇadꢁ ꢆꢂtꢀ tꢆꢅ 1 ꢇꢂꢉ ꢆꢂꢄꢁꢃ aꢄꢁ ꢄꢁcꢅꢇꢇꢁꢊdꢁd. Tꢀꢁꢃꢁ bꢅꢊdꢃ ꢃꢀꢅuꢉd bꢁ tꢀꢁꢄꢇꢅꢃꢅꢊꢂcaꢉꢉy bꢅꢊdꢁd ꢆꢂtꢀ a ꢋꢅꢄcꢁ  
ꢅꢋ 40-60 gꢄaꢇꢃ. DC bꢅꢊdꢃ ꢅꢋ 0.001” (0.025 ꢇꢇ) dꢂaꢇꢁtꢁꢄ, tꢀꢁꢄꢇꢅꢃꢅꢊꢂcaꢉꢉy bꢅꢊdꢁd, aꢄꢁ ꢄꢁcꢅꢇꢇꢁꢊdꢁd. Baꢉꢉ bꢅꢊdꢃ  
ꢃꢀꢅuꢉd bꢁ ꢇadꢁ ꢆꢂtꢀ a ꢋꢅꢄcꢁ ꢅꢋ 40-50 gꢄaꢇꢃ aꢊd ꢆꢁdgꢁ bꢅꢊdꢃ at 18-22 gꢄaꢇꢃ. Aꢉꢉ bꢅꢊdꢃ ꢃꢀꢅuꢉd bꢁ ꢇadꢁ ꢆꢂtꢀ a  
ꢊꢅꢇꢂꢊaꢉ ꢃtagꢁ tꢁꢇꢈꢁꢄatuꢄꢁ ꢅꢋ 150 °C. A ꢇꢂꢊꢂꢇuꢇ aꢇꢅuꢊt ꢅꢋ uꢉtꢄaꢃꢅꢊꢂc ꢁꢊꢁꢄgy ꢃꢀꢅuꢉd bꢁ aꢈꢈꢉꢂꢁd tꢅ acꢀꢂꢁvꢁ ꢄꢁꢉꢂabꢉꢁ  
bꢅꢊdꢃ. Aꢉꢉ bꢅꢊdꢃ ꢃꢀꢅuꢉd bꢁ aꢃ ꢃꢀꢅꢄt aꢃ ꢈꢅꢃꢃꢂbꢉꢁ, ꢉꢁꢃꢃ tꢀaꢊ 12 ꢇꢂꢉꢃ (0.31 ꢇꢇ).  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343  
Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 9  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
HMC797  
v02.1011  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Notes:  
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 10  

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