SFF804 [HY]

SUPER FAST RECTIFIERS; 超快速整流器
SFF804
型号: SFF804
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SUPER FAST RECTIFIERS
超快速整流器

文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SFF801 thru SFF808  
REVERSE VOLTAGE - 50 to 600Volts  
FORWARD CURRENT - 8.0 Amperes  
SUPER FAST RECTIFIERS  
ITO-220AC  
FEATURES  
Super fast switching time for high efficiency  
.138(3.5)  
.189(4.8)  
Low forward voltage drop  
High current capabiltiy  
.122(3.1)  
.173(4.4)  
.406(10.3)  
.386(9.8)  
.118(3.0)  
.102(2.6)  
.118(3.0)  
.106(2.7)  
Low reverse leakage current  
Plastic material has UL flammability  
classification 94V-0  
.610(15.5)  
.571(14.5)  
.04 MAX  
(1.0)  
MECHANICAL DATA  
Case: ITO-220AC molded plastic  
Epoxy: UL94V-0 rate flame retadant  
Mounting position :Any  
.157(4.0)  
.142(3.6)  
.114(2.9)  
.098(2.5)  
.059(1.5)  
.571(14.5)  
.531(13.5)  
.043(1.1)  
.030(0.76)  
.020(0.51)  
.112(2.84)  
.088(2.24)  
Weight: 2.24 grams  
.030(0.76)  
.020(0.51)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL SFF801 SFF802 SFF803 SFF804 SFF805 SFF806 SFF808  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward  
100  
I(AV)  
8.0  
A
Rectified Current  
@TA =75 ℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
IFSM  
300  
A
Super Imposed on Rated Load(JEDEC Method)  
Peak Instantaneous Forward Voltage at 8.0A DC  
1.0  
35  
1.25  
40  
VF  
IR  
1.3  
50  
V
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
μA  
150  
@TJ=100℃  
Maximum Reverse Recovery Time(Note1)  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
TRR  
CJ  
nS  
pF  
40  
5
RθJA  
/W  
-55 to + 150  
Operating and Storage Temperature Range  
TJ,TSTG  
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A  
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.  
3.Thermal resistance junction to ambient  
~ 168 ~  
RATING AND CHARACTERTIC CURVES  
SFF801 thru SFF808  
FIG.1- TYPICAL FORWARD CURRENT DERATING CURVE  
10  
FIG.2-TYPICAL REVERSE  
CHARACTERISTICS  
1000  
8
TJ=100°C  
6
SINGLE PHASE HALF  
WAVE 60HZ  
4
RESISTIVE OR  
100  
10  
INDUCTIVE LOAD  
2
0
0
150  
50  
100  
AMBIENT TEMPERATURE ℃  
TJ=25°C  
FIG.3-MAXIMUM NON-REPETITVE FORWARD SURGE CURRENT  
1.0  
0.1  
350  
300  
250  
200  
150  
100  
120 140  
20  
40  
60  
80 100  
PERCENT OF RATED PEAK  
REVERSE VOLTAGE(%)  
8.3 ms Single Half-Sine-Wave  
(JEDEC METOD)  
50  
1
2
10  
20  
5
50  
100  
NUMBER OF CYCLES AT 60HZ  
FIG.4-TYPICAL INSTANTAEOUS  
FORWARD CHARACTERISTICS  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
40  
200  
SFF801 -  
20  
10  
100  
40  
SFF804  
SFF808  
4
20  
10  
2
SFF805 - SFF806  
TJ=25°C  
1.0  
0.4  
4
2
TJ=25°C  
PULSE WIDTH 300uS  
1% DUTY CYCLE  
0.2  
0.1  
1
0.1 0.2  
0.4 1.0  
2
4
10 20  
40 100  
0.6 0.8  
1.6  
1.8  
2.0  
1.0  
1.2  
1.4  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
REVERSE VOLTAGE,(V)  
~ 169 ~  

相关型号:

SFF804A

SUPER-FAST RECOVERY RECTIFIERS
ASEMI

SFF805

SUPER FAST RECTIFIERS
HY

SFF806

SUPER FAST RECTIFIERS
HY

SFF806A

SUPER-FAST RECOVERY RECTIFIERS
ASEMI

SFF808

SUPER FAST RECTIFIERS
HY

SFF80N10M

55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
SSDI

SFF80N10Z

55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
SSDI

SFF80N20

Avalanche Rated N-channel MOSFET
SSDI

SFF80N20MDB

Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI

SFF80N20MDBS

Avalanche Rated N-channel MOSFET
SSDI

SFF80N20MDBTX

Avalanche Rated N-channel MOSFET
SSDI

SFF80N20MDBTXV

Avalanche Rated N-channel MOSFET
SSDI