40TPS12 [INFINEON]
PHASE CONTROL SCR; 相位控制可控硅
| 型号： | 40TPS12 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL SCR |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2107 rev. F 03/03
SAFEIR Series
40TPS..
PHASE CONTROL SCR
VT < 1.45V @ 40A
ITSM = 500A
VRRM = 800 - 1200V
Description/ Features
The 40TPS... SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125°C junction temperature.
Low Igt parts available.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
andoutputrectifierswhichareavailableinidentical
package outlines.
Package Outline
Major Ratings and Characteristics
Characteristics
40TPS.. Units
IT(AV) Sinusoidal
waveform
IRMS
35
A
55
800 - 1200
500
A
V
DRM Range
V
VRRM
ITSM
VT
/
A
@40A, TJ = 25°C
1.45
V
dv/dt
di/dt
TJ
1000
V/µs
A/µs
°C
100
TO-247AC
- 40 to 125
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1
40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
Voltage Ratings
VRRM/ VDRM, max. repetitive
VRSM , maximum non repetitive IRRM/ IDRM
peak and off-state voltage
V
peak reverse voltage
V
125°C
mA
Part Number
40TPS08
40TPS12
800
900
10
1200
1300
Absolute Maximum Ratings
Parameters
40TPS.. Units
Conditions
IT(AV) Max. Average On-state Current
IT(RMS) Max. Continuous RMS
On-state Current As ACswitch
35
A
@TC = 79° C, 180° conduction half sine wave
55
ITSM
Max.Peak One Cycle Non-Repetitive
Surge Current
500
600
A
10ms Sine pulse, rated VRRM applied
Initial
10ms Sine pulse, novoltage reapplied TJ =TJ max.
I2t
Max.I2t for Fusing
1250
1760
12500
1.02
A2s 10ms Sine pulse, rated VRRM applied
10ms Sine pulse, novoltage reapplied
A2√s t = 0.1 to 10ms, no voltage reapplied
I2√t
Max.I2√t for Fusing
VT(TO) Low Level Value of Threshold
V
TJ = 125°C
1
Voltage
VT(TO) High Level Value of Threshold
1.23
9.74
2
Voltage
rt1
Low Level Value of On-state
Slope Resistance
mΩ
rt2
High Level Value of On-state
7.50
1.85
Slope Resistance
VTM
Max. Peak On-state Voltage
V
@110A, TJ =25°C
di/dt
IH
Max.RateofRiseofTurned-onCurrent
Max. Holding Current
100
150
A/µs TJ = 25°C
mA
IL
Max. Latching Current
Max. Reverse and Direct
Leakage Current
300
0.5
IRRM
/
mA
TJ =25°C
VR =ratedVRRM/ VDRM
IDRM
10
TJ = 125°C
dv/dt Max.RateofRise
of Off-state Voltage
40TPS08
40TPS12
500
1000
V/µs TJ = TJ max., linearto80%VDRM , R -k=open
g
2
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40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
Triggering
Parameters
40TPS.. Units
Conditions
PGM Max. peak Gate Power
10
2.5
2.5
10
W
P
G(AV) Max. average Gate Power
IGM Max. peak Gate Current
- VGM Max. peak negative Gate Voltage
VGT Max. required DC Gate Voltage
to trigger
A
V
4.0
2.5
1.7
270
150
80
TJ = - 40°C
TJ = 25°C
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
Anode supply = 6V
resistive load
IGT
Max. required DC Gate Current
to trigger
mA
40
TJ = 25°C, for 40TPS08A
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
0.25
6
V
TJ = 125°C, VDRM = rated value
mA
Thermal-Mechanical Specifications
Parameters
40TPS.. Units
Conditions
TJ
Max. Junction Temperature Range - 40 to 125
°C
Tstg Max. Storage Temperature Range - 40 to 125
RthJC Max. Thermal Resistance Junction
to Case
0.6
40
°C/W
DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
RthCS Max. Thermal Resistance Case
to Heatsink
0.2
Mounting surface, smooth and greased
wt
T
Approximate Weight
Mounting Torque
6 (0.21) g (oz.)
Min.
6 (5)
Kg-cm
(lbf-in)
Max.
12 (10)
Case Style
TO-247AC
3
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40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
130
120
110
100
90
130
40TPS.. Series
(DC) = 0.6 °C/W
40TPS.. Series
thJC
R
R
(DC) = 0.6 °C/W
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
30°
10
90°
20
60°
90°
120°
120°
30
180°
180°
80
80
DC
50
70
70
0
20
40
60
0
10
30
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
DC
180°
120°
90°
180°
120°
90°
60°
60°
30°
RMS Lim it
30°
RMS Lim it
Conduction Period
40TPS.. Series
Conduction Angle
4 0TPS. . Se r i e s
T = 125°C
J
T = 125°C
J
0
10
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
20
30
40
50
60
0
5
10 15 20 25 30 35 40
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
550
600
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
550
500
450
400
350
300
250
Initia l T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
500
450
400
350
300
250
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
40TPS.. Series
4 0 TPS. . Se r ie s
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge
Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
100
10
1
T = 2 5° C
J
T = 125°C
J
40TPS.. Series
1.5
0.5
1
2
InstantaneousOn-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr= 0.5 µs, tp >= 6µs
b)Recommended load line for
<= 30%rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(3) (2) (1)
(4)
VGD
IGD
0.01
40TPS..
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
InstantaneousGate Current (A)
Fig. 8 - GateCharacteristics
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
4 0TPS. . Se r ie s
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
5
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40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
Outline Table
3. 65 (0.14 4)
3.55 (0.13 9)
5. 30 (0.20 9)
4.70 ( 0.185)
DIA.
15.90 (0 .626 )
15.30 (0 .602 )
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .225)
5.30 ( 0.208)
20 .30 (0 .800 )
19 .70 (0 .775 )
5.50 ( 0.217)
4. 50 (0 .177)
(2 PLCS.)
1
2
3
14.80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0.17 0)
3. 70 (0.14 5)
2. 20 (0 .087)
MAX.
2.40 (0 .095)
MAX.
1. 40 (0.056)
1. 00 (0.039)
0.80 ( 0.032)
0.40 (0.21 3)
10.94 ( 0.430)
10 .86 (0.427)
Dimensions in millimeters and inches
Marking Information
EXAMPLE: THIS IS A 40TPS12
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
40TPS12
035H
LOGO
56
57
DATE CODE
YEAR 0 = 2000
WEEK 35
ASSEMBLY
LOT CODE
LINE H
6
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40TPS.. SAFEIR Series
Bulletin I2107 rev. F 03/03
Ordering Information Table
Device Code
2
(A)
40
T
P
S
12
5
2
4
6
1
3
1
2
-
-
Current Rating
Circuit Configuration:
T = Thyristor
1 (K)
(G) 3
3
4
-
-
Package:
T = TO-247
Type of Silicon:
S = Standard Recovery Rectifier
Voltage code: Code x 100 = V
None = Standard Igt selection
A = Low Igt selection 40mA max. only for 40TPS08A
08 = 800V
12 = 1200V
5
6
-
-
RRM
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
7
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