AIKB30N65DF5_技术文档

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

HighꢀspeedꢀfastꢀIGBTꢀinꢀTRENCHSTOP^TMꢀ5ꢀtechnologyꢀcopackedꢀwith

RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode

ꢀ

C

E

FeaturesꢀandꢀBenefits:

ꢀꢀꢀHighꢀspeedꢀF5ꢀtechnologyꢀoffering:

•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant

ꢀꢀꢀtopologies

•ꢀꢀ650Vꢀbreakdownꢀvoltage

•ꢀꢀLowꢀgateꢀchargeꢀQ_G

•ꢀꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode

•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀꢀDynamicallyꢀstressꢀtested

G

C

•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101

•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)

•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:

ꢀꢀꢀhttp://www.infineon.com/igbt/

Applications:

•ꢀꢀOff-boardꢀcharger

•ꢀꢀOn-boardꢀcharger

•ꢀꢀDC/DCꢀconverter

G

•ꢀꢀPower-Factorꢀcorrection

E

Packageꢀpinꢀdefinition:

•ꢀꢀPinꢀ1ꢀ-ꢀgate

•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector

•ꢀꢀPinꢀ3ꢀ-ꢀemitter

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.6V 175°C

Marking

Package

PG-TO263-3

AIKB30N65DF5

650V

30A

AK30EDF5

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

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AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

MaximumꢀRatings

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

650

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_C

55.0

35.0

A

1)

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

90.0

A

Turn off safe operating area

-

V_CEꢀ≤ꢀ650V,ꢀT_vjꢀ≤ꢀ175°C,ꢀt_pꢀ=ꢀ1µs¹⁾

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_F

37.0

22.0

A

1)

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

90.0

A

V

Gate-emitter voltage

±20

±30

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)

PowerꢀdissipationꢀT_cꢀ=ꢀ25°C

PowerꢀdissipationꢀT_cꢀ=ꢀ100°C

188.0

93.0

P_tot

W

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

reflow soldering (MSL1 according to JEDEC J-STA-020)

°C

260

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,

junction - case

R_th(j-c)

R_th(j-a)

-

0.80 K/W

1.80 K/W

65 K/W

Diode thermal resistance,

junction - case

Thermal resistance, min. footprint

junction - ambient

Thermal resistance, 6cm² Cu on

PCB

R_th(j-a)

-

40 K/W

junction - ambient

¹⁾Defined by design. Not subject to production test.

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.20mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ30.0A

T_vjꢀ=ꢀ25°C

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ125°C

650

-

V

-

1.60 2.10

1.80

1.90

-

T_vjꢀ=ꢀ175°C

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ15.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ125°C

T_vjꢀ=ꢀ175°C

-

1.45 1.80

Diode forward voltage

V_F

V

1.40

-

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ0.30mA,ꢀV_CEꢀ=ꢀV_GE

3.2

4.0

4.8

V

V_CEꢀ=ꢀ650V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

-

40

-

µA

1000

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ30.0A

-

100

-

nA

S

30.0

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

-

1800

50

-

Output capacitance

C_oes

C_res

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

pF

Reverse transfer capacitance

11

V_CCꢀ=ꢀ520V,ꢀI_Cꢀ=ꢀ30.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

-

70.0

7.0

-

nC

nH

Internal emitter inductance

measured 5mm (0.197 in.) from

case

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

25

17

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ15.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ23.0Ω,ꢀR_G(off)ꢀ=ꢀ23.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

188

25

ns

Turn-on energy

E_on

E_off

E_ts

0.33

0.10

0.43

mJ

Turn-off energy

Total switching energy

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

22

8

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ5.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ23.0Ω,ꢀR_G(off)ꢀ=ꢀ23.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

194

21

ns

Turn-on energy

Turn-off energy

Total switching energy

E_on

E_off

E_ts

0.10

0.02

0.12

mJ

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

67

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ15.0A,

di_F/dtꢀ=ꢀ1005A/µs

Q_rr

0.44

11.6

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-232

-

A/µs

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

39

0.24

9.7

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ5.0A,

Q_rr

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ755A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-536

-

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

24

18

-

ns

T_vjꢀ=ꢀ150°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ15.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ23.0Ω,ꢀR_G(off)ꢀ=ꢀ23.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

208

15

ns

Turn-on energy

E_on

E_off

E_ts

0.41

0.11

0.52

mJ

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

21

9

-

ns

T_vjꢀ=ꢀ150°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ5.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ23.0Ω,ꢀR_G(off)ꢀ=ꢀ23.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

233

14

ns

Turn-on energy

Turn-off energy

Total switching energy

E_on

E_off

E_ts

0.16

0.03

0.19

mJ

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

92

-

ns

µC

A

T_vjꢀ=ꢀ150°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ15.0A,

Q_rr

0.76

14.4

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ980A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-205

-

A/µs

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

63

-

ns

µC

A

T_vjꢀ=ꢀ150°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ5.0A,

Q_rr

0.48

13.1

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ740A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-362

-

A/µs

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

200

180

160

140

120

100

80

60

50

40

30

20

10

0

60

40

20

0

25

50

75

100

125

150

175

25

50

75

100

125

150

175

T_C,ꢀCASEꢀTEMPERATUREꢀ[°C]

Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase

Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase

temperature

(T_vj≤175°C)

(V_GE≥15V,ꢀT_vj≤175°C)

90

V_GE= 20V

18V

15V

12V

10V

8V

80

70

60

50

40

30

20

10

0

18V

15V

70

12V

60

10V

8V

50

7V

6V

5V

40

30

20

10

0

5V

0

1

2

3

4

5

0

1

2

3

4

5

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 3. Typicalꢀoutputꢀcharacteristic

(T_vj=25°C)

Figure 4. Typicalꢀoutputꢀcharacteristic

(T_vj=150°C)

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

90

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

T_vj= 25°C

T_vj= 150°C

I_C= 7.5A

I_C= 15A

I_C= 30A

80

70

60

50

40

30

20

10

0

4

5

6

7

8

9

10

0

25

50

75

100

125

150

175

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 5. Typicalꢀtransferꢀcharacteristic

(V_CE=20V)

Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas

aꢀfunctionꢀofꢀjunctionꢀtemperature

(V_GE=15V)

1000

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

100

t_r

100

10

1

10

1

0

10

20

30

40

50

60

70

80

90

5

15

25

35

45

55

65

75

85

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

r_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

collectorꢀcurrent

Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate

resistor

(inductiveꢀload,ꢀT_vj=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀr_G=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

(inductiveꢀload,ꢀT_vj=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀI_C=15A,Dynamicꢀtestꢀcircuitꢀin

Figure E)

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

1000

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

typ.

min.

max.

t_d(off)

t_f

t_d(on)

t_r

100

10

1

25

50

75

100

125

150

175

0

25

50

75

100

125

150

175

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

junctionꢀtemperature

Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

(inductiveꢀload,ꢀV_CE=400V,ꢀV_GE=15/0V,

(I_C=0.3mA)

I_C=15A,ꢀr_G=23Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure

E)

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

E_off

E_on

E_ts

E_off

E_on

E_ts

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0

10

20

30

40

50

60

70

80

90

5

15

25

35

45

55

65

75

85

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

r_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀcurrent

Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀgateꢀresistor

(inductiveꢀload,ꢀT_vj=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀr_G=23Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

(inductiveꢀload,ꢀT_vj=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀI_C=15A,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

Datasheet

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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

E_off

E_on

E_ts

E_off

E_on

E_ts

0.6

0.5

0.4

0.3

0.2

0.1

0.0

25

50

75

100

125

150

175

200

250

300

350

400

450

500

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀjunctionꢀtemperature

(inductiveꢀload,ꢀV_CE=400V,ꢀV_GE=15/0V,

I_C=15A,ꢀr_G=23Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀemitterꢀvoltage

(inductiveꢀload,ꢀT_vj=150°C,ꢀV_GE=15/0V,

I_C=15A,ꢀr_G=23Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

16

V_CCꢀ=ꢀ130V

V_CCꢀ=ꢀ520V

C_ies

C_o(_er)

C_oes

C_res

1E+4

1000

100

10

14

12

10

8

6

4

2

0

1

0

10

20

30

40

50

60

70

80

0

50

100 150 200 250 300 350 400

Q_GE,ꢀGATEꢀCHARGEꢀ[nC]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 15. Typicalꢀgateꢀcharge

(I_C=30A)

Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof

collector-emitterꢀvoltage

(V_GE=0V,ꢀf=1MHz)

Datasheet

10

Vꢀ2.1

2019-10-17

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

1

single pulse

0.01

single pulse

0.01

0.02

0.05

0.1

0.02

0.05

0.1

0.2

D = 0.5

0.01

i:

1

2

3

4

5

6

i:

1

2

3

4

r_i[K/W]: 7.5E-3 0.179623 0.30962 0.262097 0.022228 2.2E-3

r_i[K/W]: 0.39889 0.45435 0.58367 0.36365

τ_i[s]:

1.4E-5 2.6E-4

1.6E-3

8.2E-3

0.126279 2.036965

τ_i[s]:

1.4E-4

8.7E-4

9.2E-3

0.04412

0.001

1E-6

1E-5

1E-4

0.001

0.01

0.1

1

1E-5

1E-4

0.001

0.01

0.1

1

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 17. IGBTꢀtransientꢀthermalꢀimpedance

(D=t_p/T)

Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidth

(D=t_p/T)

130

1.1

T_vj= 25°C, I_F= 15A

T_vj= 150°C, I_F= 15A

T_vj= 25°C, I_F= 15A

T_vj= 150°C, I_F= 15A

120

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

110

100

90

80

70

60

50

40

400

800

1200

1600

2000

2400

400

800

1200

1600

2000

2400

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa

ofꢀdiodeꢀcurrentꢀslope

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Datasheet

11

Vꢀ2.1

2019-10-17

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

25.0

0

-50

T_vj= 25°C, I_F= 15A

T_vj= 150°C, I_F= 15A

T_vj= 25°C, I_F= 15A

T_vj= 150°C, I_F= 15A

22.5

20.0

17.5

15.0

12.5

10.0

7.5

-100

-150

-200

-250

-300

-350

-400

5.0

400

800

1200

1600

2000

2400

400

800

1200

1600

2000

2400

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

(V_R=400V)

90

2.50

T_vj= 25°C

T_vj= 150°C

I_F= 7.5A

I_F= 15A

80

I_F= 30A

2.25

70

60

50

40

30

20

10

0

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25

50

75

100

125

150

175

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature

Datasheet

12

Vꢀ2.1

2019-10-17

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

Package Drawing PG-TO263-3

MIN

4.30

0.00

0.65

0.95

0.33

1.17

8.51

7.10

9.80

6.50

MAX

4.57

0.25

0.85

1.15

0.65

1.40

9.45

7.90

10.31

8.60

MIN

MAX

0.180

0.010

0.033

0.045

0.026

0.055

0.372

0.311

0.406

0.339

0.169

0.000

0.026

0.037

0.013

0.046

0.335

0.280

0.386

0.256

Z8B00003324

0

5

0

2.54

5.08

2

0.100

0.200

2

7.5mm

14.61

2.29

0.70

1.00

16.05

9.30

4.50

10.70

3.65

1.25

15.88

3.00

1.60

1.78

16.25

9.50

4.70

10.90

3.85

1.45

0.575

0.090

0.028

0.039

0.632

0.366

0.177

0.421

0.144

0.049

0.625

0.118

0.063

0.070

0.640

0.374

0.185

0.429

0.152

0.057

30-08-2007

01

Datasheet

13

Vꢀ2.1

2019-10-17

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

Testing Conditions

V_GE(t)

I,V

90% V_GE

t_rr= t_a+ t_b

dI_F/dt

Q_rr= Q_a+ Q_b

a

b

10% V_GE

t

Q_a

Q_b

I_C(t)

dI

90% I_C

10% I_C

Figure C. Definition of diode switching

characteristics

t

V_CE(t)

t

t_d(off)

t_f

t_d(on)

t_r

Figure A.

V_GE(t)

90% V_GE

Figure D.

10% V_GE

t

I_C(t)

CC

2% I_C

t

V_CE(t)

Figure E. Dynamic test circuit

Parasitic inductance L ,

parasitic capacitor C ,

s

relief capacitor C ,

(only for ZVT switching)

r

t₂

t₄

E

=

V_CEx I_Cx dt

E

=

V_CEx I_Cx dt

off

on

2% V_CE

t₁

t₃

t

t₁

t₂

t₃

t₄

Figure B.

Datasheet

14

Vꢀ2.1

2019-10-17

AIKB30N65DF5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

RevisionꢀHistory

AIKB30N65DF5

Revision:ꢀ2019-10-17,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1

2019-10-17 Final Datasheet

Datasheet

15

Vꢀ2.1

2019-10-17

Trademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

ꢀ

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

ImportantꢀNotice

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics

(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany

informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand

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型号：	AIKB30N65DF5
厂家：	Infineon
描述：	Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. 功率因数校正
文件：	总16页 (文件大小：1602K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AIKB30N65DF5 [INFINEON]

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