AUIRF2907ZS7PTR [INFINEON]
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7;
| 型号： | AUIRF2907ZS7PTR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96321
AUTOMOTIVE GRADE
AUIRF2907ZS-7P
HEXFET® Power MOSFET
Features
D
V(BR)DSS
75V
3.0m
l Advanced Process Technology
l UltraLowOn-Resistance
l 175°COperatingTemperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free,RoHSCompliant
l Automotive Qualified *
RDS(on) typ.
Ω
G
max.
3.8m
Ω
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID (Silicon Limited)
180A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombinetomake
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
S
S
S
S
S
G
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicatedinthespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiods
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Max.
180
120
700
300
Units
A
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
DM
P
@TC = 25°C
W
Maximum Power Dissipation
D
Linear Derating Factor
2.0
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
160
410
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
STG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
RθJC
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθCS
0.50
–––
°C/W
Rθ
JA
Junction-to-Ambient
RθJA
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF2907ZS-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
GS = 10V, ID = 110A
V(BR)DSS
∆Β
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75
–––
–––
2.0
–––
–––
V
∆
V
DSS/ TJ
0.066
–––
V/°C
RDS(on) SMD
V
3.0
–––
–––
–––
–––
–––
–––
3.8
4.0
mΩ
V
VGS(th)
VDS = VGS, ID = 250µA
VDS = 25V, ID = 110A
VDS = 75V, VGS = 0V
gfs
IDSS
94
–––
20
S
Forward Transconductance
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
250
200
-200
V
DS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
170
55
66
21
90
92
44
260
–––
–––
–––
–––
–––
–––
ID = 110A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
V
V
V
DS = 60V
GS = 10V
DD = 38V
nC
ID = 110A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG = 2.6
VGS = 10V
Between lead,
LD
D
S
Internal Drain Inductance
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
from package
nH
pF
G
LS
Internal Source Inductance
and center of die contact
VGS = 0V
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
7580
970
–––
–––
–––
–––
–––
–––
Coss
Crss
Coss
Coss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
V
DS = 25V
540
ƒ = 1.0MHz, See Fig. 5
3750
650
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss eff.
1110
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
160
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
–––
–––
700
1.3
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 110A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
J
S
GS
trr
Qrr
T = 25°C, I = 110A, VDD = 38V
–––
–––
35
40
53
60
ns
nC
J
F
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ This value determined from sample failure population starting
TJ = 25°C, L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
Coss eff. is a fixed capacitance that gives the same
Solder mounted on IMS substrate.
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
www.irf.com
AUIRF2907ZS-7P
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D2 PAK 7 Pin
MSL1
Class M4(425V)
Machine Model
(per AEC-Q101-002)
Class H2(4000V)
(per AEC-Q101-001)
Class C4 (1000V)
(per AEC-Q101-005)
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF2907ZS-7P
1000
100
10
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
10
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
200
150
100
50
1000
T
= 25°C
J
100
10
1
T
= 175°C
J
T
= 25°C
J
T
= 175°C
J
V
= 10V
DS
380µs PULSE WIDTH
V
= 25V
DS
≤
60µs PULSE WIDTH
0
0.1
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
www.irf.com
AUIRF2907ZS-7P
12.0
10.0
8.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = 110A
D
V
V
V
= 60V
C
C
C
+ C , C
SHORTED
ds
DS
DS
DS
iss
gs
gd
= C
= 38V
= 15V
rss
oss
gd
= C + C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100µsec
10msec
T
= 25°C
J
LIMITED BY PACKAGE
1
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
0.1
1.0
10.0
100.0
0.0
0.2
V
0.4
0.6
0.8
1.0
1.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5
AUIRF2907ZS-7P
200
160
120
80
3.0
2.5
2.0
1.5
1.0
0.5
I
= 180A
= 10V
D
V
GS
40
0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
25
50
75
100
125
150
175
T
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
Cτ
0.1072
0.2787
0.1143
0.000096
0.002614
0.013847
τ
τ
1τ1
τ
2τ2
3τ3
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
AUIRF2907ZS-7P
700
600
500
400
300
200
100
0
I
D
15V
TOP
24A
34A
BOTTOM 110A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
175
t
p
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
I
vs. Drain Current
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Q
Q
GD
GS
V
G
Charge
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
-75 -50 -25
0
T
25 50 75 100 125 150 175 200
, Temperature ( °C )
+
V
DS
J
D.U.T.
-
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
www.irf.com
7
AUIRF2907ZS-7P
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
100
10
1
0.01
0.05
0.10
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
Single Pulse
BOTTOM 1% Duty Cycle
= 110A
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
T
jmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
www.irf.com
AUIRF2907ZS-7P
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRF2907ZS-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
PartNumber
AUIRF2907ZS-7
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2907ZS-7P
D2Pak - 7 Pin Tape and Reel
www.irf.com
11
AUIRF2907ZS-7P
Ordering Information
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF2907ZS-7P
D2Pak
Tube
50
AUIRF2907ZS-7P
AUIRF2907ZS7PTL
AUIRF2907ZS7PTR
Tape and Reel Left
Tape and Reel Right
800
800
12
www.irf.com
AUIRF2907ZS-7P
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservicevoidsallexpress
and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible
or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer
shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims,
costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociated
with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically
designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers
acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that
they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproductsaredesignated
by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree
that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
13
相关型号：
©2020 ICPDF网 联系我们和版权申明