AUIRF2903ZSTRR [INFINEON]
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| 型号： | AUIRF2903ZSTRR |
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PD-96379
AUIRF2903Z
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
V(BR)DSS
D
30V
1.9m
l
Advanced Process Technology
UltraLowOn-Resistance
RDS(on) typ.
Ω
l
l
l
l
l
l
175°COperatingTemperature
Fast Switching
max.
ID (Silicon Limited)
ID (Package Limited)
2.4mΩ
260A
160A
G
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
S
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
thisdesignanextremelyefficientandreliabledeviceforusein
Automotiveapplicationsandawidevarietyofotherapplications.
S
D
G
TO-220AB
AUIRF2903Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
Units
(Silicon Limited)
(Silicon Limited)
(Package Limited)
260
I
I
I
I
@ T = 25°C
C
D
D
D
180
@ T = 100°C
C
A
160
@ T = 25°C
C
1020
DM
290
Power Dissipation
P
@T = 25°C
C
W
W/°C
V
D
2.0
Linear Derating Factor
± 20
Gate-to-Source Voltage
V
GS
EAS
290
820
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
-55 to + 175
Operating Junction and
T
T
J
Storage Temperature Range
°C
STG
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
0.51
–––
62
Units
RθJC
RθCS
RθJA
Junction-to-Case
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
AUIRF2903Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min.
30
Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
–––
0.021
1.9
–––
–––
2.4
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A **
–––
–––
2.0
VDS = VGS, ID = 250μA
–––
–––
–––
–––
–––
–––
4.0
VDS = 10V, ID = 75A**
VDS = 30V, VGS = 0V
gfs
IDSS
Forward Transconductance
120
–––
–––
–––
–––
–––
20
S
Drain-to-Source Leakage Current
μA
V
DS = 30V, VGS = 0V, TJ = 125°C
GS = 20V
250
200
-200
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ID = 75A**
VDS = 24V
VGS = 10V
VDD = 15V
ID = 75A**
RG = 3.2 Ω
VGS = 10V
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
160
51
240
–––
–––
–––
–––
–––
–––
nC
ns
58
24
100
48
td(off)
tf
Turn-Off Delay Time
Fall Time
37
D
S
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
–––
–––
4.5
7.5
–––
–––
nH
pF
G
LS
Internal Source Inductance
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
6320
1980
1100
5930
2010
3050
–––
–––
–––
–––
–––
–––
VDS = 25V
Coss
Output Capacitance
Crss
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ. Max. Units
D
S
–––
–––
160
I
I
S
showing the
A
G
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
1020
SM
p-n junction diode.
T = 25°C, I = 75A**, V = 0V
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
34
1.3
51
44
V
J
S
GS
SD
T = 25°C, I = 75A**, VDD = 15V
ns
nC
J
F
rr
di/dt = 100A/μs
29
Q
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
t
on
Notes:
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB pakcage.
Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
from 0 to 80% VDSS
.
** All AC and DC test condition based on former Package limited
current of 75A.
2
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AUIRF2903Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part
number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
3L-TO-220
N/A
Class M4(+/- 800V )†††
Machine Model
(per AEC-Q101-002)
Class H2(+/- 4000V )†††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRF2903Z
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
≤ 60μs PULSE WIDTH
≤
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
240
200
160
120
80
1000.0
T
= 25°C
J
100.0
10.0
1.0
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 25V
40
DS
V
= 10V
DS
≤ 60μs PULSE WIDTH
380μs PULSE WIDTH
0.1
0
2.0
3.0
4.0
5.0
6.0 7.0 8.0 9.0 10.0
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. DrainCurrent
4
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AUIRF2903Z
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 75A
D
V
= 24V
= C + C , C SHORTED
DS
VDS= 15V
iss
gs
gd ds
C
= C
rss
gd
C
= C + C
ds
oss
gd
Ciss
Coss
Crss
4
0
0
40
80
120
160
200
240
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100μsec
10msec
DC
LIMITED BY PACKAGE
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRF2903Z
300
250
200
150
100
50
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 75A
D
V
= 10V
GS
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Normalized On-Resistance
Case Temperature
Vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.08133 0.000044
R1
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
0.02
0.01
2 τ2
3τ3
0.2408
0.000971
0.18658 0.008723
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2903Z
1200
1000
800
600
400
200
0
I
D
TOP
26A
42A
BOTTOM 75A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
I
= 1.0A
D
D
= 1.0mA
Q
G
ID = 250μA
= 150μA
I
D
10 V
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
Current Regulator
Same Type as D.U.T.
T
50KΩ
.2μF
12V
Fig 14. Threshold Voltage Vs. Temperature
.3μF
+
V
DS
D.U.T.
-
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2903Z
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
10
1
0.05
0.10
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
300
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
250
200
150
100
50
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF2903Z
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
V
=10V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• dv/dtcontrolledbyRG
Re-Applied
Voltage
RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
PowerMOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF2903Z
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUF2903Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2903Z
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
AUIRF2903Z
Quantity
AUIRF2903Z
TO-220
Tube
50
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11
AUIRF2903Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provideadequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations
isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthird
parties may be subject to additional restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservice
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
12
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