AUIRF7739L2TR [INFINEON]
Automotive DirectFET Power MOSFET; 汽车的DirectFET功率MOSFET
| 型号： | AUIRF7739L2TR |
| 厂家： | 
Infineon |
| 描述： | Automotive DirectFET Power MOSFET |
| 文件： | 总11页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97442A
AUIRF7739L2TR
AUIRF7739L2TR1
AUTOMOTIVE GRADE
Automotive DirectFET® Power MOSFET
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
V(BR)DSS
40V
700µ
RDS(on) typ.
Ω
Ω
max.
ID (Silicon Limited)
Qg
1000µ
• Low Parasitic Parameters
270A
• Dual Sided Cooling
220nC
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-
aging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Max.
Parameter
Units
40
V
V
Drain-to-Source Voltage
Gate-to-Source Voltage
V
DS
GS
± 20
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
270
I
I
I
@ T = 25°C
C
D
D
D
190
A
@ T = 100°C
C
46
@ TA = 25°C
ID @ TC = 25°C
375
1070
I
DM
125
Power Dissipation
P
P
@TC = 25°C
@TA = 25°C
D
W
3.8
Power Dissipation
D
EAS
270
160
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested)
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
270
T
T
T
Peak Soldering Temperature
P
-55 to + 175
°C
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
40
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
1.2
RθJA
RθJCan
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
Linear Derating Factor
0.5
0.83
HEXFET® is a registered trademark of International Rectifier.
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1
10/22/2010
AUIRF7739L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
–––
V
–––
0.008
–––
VGS = 10V, ID = 160A
VDS = VGS, ID = 250µA
–––
2.0
700
2.8
1000
4.0
Ω
µ
V
VGS(th)
∆
∆
VGS(th)/ TJ
Gate Threshold Voltage Coefficient
–––
280
–––
–––
–––
–––
–––
-6.7
–––
1.5
––– mV/°C
VDS = 10V, ID = 160A
–––
–––
5.0
S
Ω
µA
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
–––
–––
–––
–––
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
GS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
DS = 20V, VGS = 10V
Qg
Qgs1
V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
46
330
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 160A
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs2
Qgd
19
nC See Fig. 11
81
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
74
Qsw
100
83
V
DS = 16V, VGS = 0V
Qoss
td(on)
Output Charge
Turn-On Delay Time
nC
ns
VDD = 20V, VGS = 10V
ID = 160A
21
tr
Rise Time
71
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
56
42
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VGS = 0V
11880
2510
1240
8610
2230
3040
VDS = 25V
ƒ = 1.0MHz
GS = 0V, VDS = 1.0V, f=1.0MHz
pF
V
VGS = 0V, VDS = 32V, f=1.0MHz
V
GS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
Parameter
Min.
Typ.
Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
110
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
1070
p-n junction diode.
IS = 160A, VGS = 0V
IF = 160A, VDD = 20V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
87
1.3
130
380
V
ns
nC
Qrr
250
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
2
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AUIRF7739L2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
DFET2
MSL1
Machine Model
Class B
AEC-Q101-002
Class 2
Human Body Model
ESD
AEC-Q101-001
Class IV
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7739L2TR/TR1
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
BOTTOM
10
60µs PULSE WIDTH
≤
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
≤
1
4.5V
1
4.5V
1
0.1
0.1
10
100
1000
0.1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
0.93
V
= 10V
I
= 160A
GS
D
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
8
6
4
2
0
T
= 125°C
J
T
= 25°C
J
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0
40
I
80
120
160
200
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.0
I
= 160A
= 10V
D
V
GS
100
T
= 175°C
J
1.5
1.0
0.5
T
= 25°C
10
1
J
V
= 25V
DS
≤60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
4
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AUIRF7739L2TR/TR1
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T = 175°C
J
100
10
T
= 25°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
V
= 0V
2.5
GS
1.0
-75 -50 -25
0
25 50 75 100 125 150175 200
0.0
0.5
V
1.0
1.5
2.0
3.0
, Source-to-Drain Voltage (V)
T , Temperature ( °C )
J
SD
Fig 7. Typical Threshold Voltage vs.
Fig 8. Typical Source-Drain Diode Forward Voltage
Junction Temperature
100000
150
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
125
100
75
50
25
0
rss
oss
gd
= C + C
T
= 25°C
J
ds
gd
C
iss
10000
T
= 175°C
J
C
C
oss
rss
V
= 10V
DS
20µs PULSE WIDTH
1000
1
10
100
0
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
I ,Drain-to-Source Current (A)
DS
D
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
14.0
300
250
200
150
100
50
I = 160A
D
12.0
V
V
= 32V
= 20V
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
Q , Total Gate Charge (nC)
T
C
, Case Temperature (°C)
G
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7739L2TR/TR1
10000
1100
1000
900
800
700
600
500
400
300
200
100
0
I
D
OPERATION IN THIS AREA
TOP
29A
46A
LIMITED BY R
(on)
DS
1000
100
10
BOTTOM 160A
100µsec
1msec
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.01
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
0.036168
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF7739L2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
300
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cy cle
= 160A
Single Pulse
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
I
D
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
t
av = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 17. Maximum Avalanche Energy vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 19b. Gate Charge Waveform
Fig 19a. Gate Charge Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
AUIRF7739L2TR/TR1
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Automotive DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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AUIRF7739L2TR/TR1
Automotive DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Automotive DirectFET Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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9
AUIRF7739L2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
10
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AUIRF7739L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to
make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and condi-
tions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
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and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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