AUIRFS6535 [INFINEON]
Advanced Process Technology Low On-Resistance; 先进的工艺技术低导通电阻
| 型号： | AUIRFS6535 |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology Low On-Resistance |
| 文件： | 总13页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRFS6535
AUIRFSL6535
Features
HEXFET® Power MOSFET
●
●
●
●
●
●
●
Advanced Process Technology
D
LowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
V(BR)DSS
300V
RDS(on) typ.
148m
185m
19A
G
max.
S
ID
Description
D
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
D
S
D
S
D
G
G
D2Pak
AUIRFS6535
TO-262
AUIRFSL6535
G
D
Drain
S
Gate
Source
Base part
number
Package Type
Standard Pack
Orderable Part Number
Form
Tube
Tube
Quantity
50
AUIRFSL6535
AUIRFS6535
TO-262
D2Pak
AUIRFSL6535
AUIRFS6535
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS6535TRL
AUIRFS6535TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
19
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
13
A
Pulsed Drain Current
IDM
100
PD @TC = 25°C
Power Dissipation
210
1.4
W
W/°C
V
Linear Derating Factor
VGS
EAS
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy (Thermally Limited)
216
310
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
TJ
mJ
Operating Junction and
-55 to + 175
300
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
0.71
40
Units
R
R
Junction-to-Case
Junction-to-Ambient (PCB Mount)
°C/W
JC
JA
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com © 2012 International Rectifier
July 23, 2012
1
AUIRFS/SL6535
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
300
–––
–––
3.0
–––
0.39
148
–––
–––
–––
–––
–––
–––
–––
–––
185
5.0
V(BR)DSS
V
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 5.0mA
m
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS = 10V, ID = 11A
VDS = VGS, ID = 150μA
VDS = 50V, ID = 11A
V
15
–––
20
Forward Transconductance
V
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
μA VDS = 300V, VGS = 0V
250
100
-100
VDS = 300V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = 20V
VGS = -20V
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
–––
–––
–––
–––
–––
–––
–––
–––
38
12
13
15
16
22
10
4.5
57
Qg
Qgs
Qgd
td(on)
tr
ID = 11A
nC VDS = 150V
VGS = 10V
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDD = 300V
ID = 11A
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 5.0
VGS = 10V
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
–––
7.5
–––
LS
Internal Source Inductance
and center of die contact
–––
–––
–––
–––
–––
–––
2340
195
40
–––
–––
–––
–––
–––
–––
Ciss
Input Capacitance
VGS = 0V
VDS = 25V
Coss
Output Capacitance
Crs s
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
1750
66
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 240V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 240V
Coss
Output Capacitance
130
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
–––
–––
19
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
A
showing the
integral reverse
G
–––
–––
100
I
SM
S
p-n junction diode.
–––
–––
–––
–––
190
990
1.3
285
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
T
T
= 25°C, I = 11A, V = 0V
S GS
SD
J
t
rr
ns
nC
= 25°C, I = 11A, VDD = 150V
F
J
1485
di/dt = 100A/μs
Q
t
rr
Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
on
Notes:
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 3.6mH
RG = 50, IAS = 11A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
R is measured at TJ approximately 90°C.
from 0 to 80% VDSS
.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
This value is determined from sample failure
population, starting TJ = 25°C, L = 3.6mH,
RG = 50, IAS = 11A, VGS =10V.
www.irf.com © 2012 International Rectifier
July 23, 2012
2
AUIRFS/SL6535
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
0.1
0.01
5.0V
60μs PULSE WIDTH
Tj = 175°C
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
20
T
= 25°C
J
15
10
5
T
= 175°C
J
10
T
= 175°C
J
T
= 25°C
= 50V
J
V
= 5.0V
DS
380μs PULSE WIDTH
V
DS
60μs PULSE WIDTH
1.0
0
3
4
5
6
7
8
9
0
1
2
3
4
5
6
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
3
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
14.0
12.0
10.0
8.0
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 11A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
V
= 240V
= 150V
= 60V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
C
C
iss
oss
6.0
C
rss
4.0
2.0
0.0
10
0
5
10 15 20 25 30 35 40 45 50
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
10
10msec
1
T
= 25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com © 2012 International Rectifier
July 23, 2012
4
AUIRFS/SL6535
20
15
10
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 19A
D
V
= 10V
GS
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
, Case Temperature (°C)
T
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
CaseTemperature
vs.Temperature
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
900
800
700
600
500
400
300
200
100
0
15V
I
D
TOP
1.5A
3.0A
BOTTOM 11A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
6.0
V
G
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Charge
Fig 13a. Basic Gate Charge Waveform
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
Current Regulator
Same Type as D.U.T.
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
V
GS
T , Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
www.irf.com © 2012 International Rectifier
July 23, 2012
6
AUIRFS/SL6535
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
250
TOP
BOTTOM 1.0% Duty Cycle
= 11A
Single Pulse
I
200
150
100
50
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
P
D (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
7
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com © 2012 International Rectifier
July 23, 2012
8
AUIRFS/SL6535
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRFS6535
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AULSL6535
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
www.irf.com © 2012 International Rectifier
July 23, 2012
10
AUIRFS/SL6535
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
11
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments:
This
part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
TO-262
D2 PAK
N/A
Moisture Sensitivity Level
MSL1
Class M2 (+/- 200V)††
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
www.irf.com © 2012 International Rectifier
July 23, 2012
12
AUIRFS/SL6535
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical
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in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
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products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
13
www.irf.com © 2012 International Rectifier
July 23, 2012
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