AUIRFS8405TRR_技术文档

AUIRFS8405

AUIRFSL8405

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

l

Advanced Process Technology

D

S

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_DSS

40V

R_DS(on)typ.

max.

1.9mΩ

2.3mΩ

G

I_D

193A

(Silicon Limited)

I_D

120A

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use

inAutomotiveapplicationsandwidevarietyofotherapplications.

D

S

D

S

D

G

D²Pak

G

TO-262

AUIRFSL8405

AUIRFS8405

Applications

l

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

G

Gate

D

Drain

S

Source

DC-DCApplications

Base part number

Package Type

Standard Pack

Form

Complete Part Number

Quantity

AUIRFSL8405

AUIRFS8405

TO-262

D2Pak

Tube

50

AUIRFSL8405

AUIRFS8405

Tape and Reel Left

Tape and Reel Right

800

AUIRFS8405TRL

AUIRFS8405TRR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

193

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

137

A

120

904

163

P_D@T_C= 25°C

Maximum Power Dissipation

W

W/°C

V

1.1

Linear Derating Factor

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbf in (1.1N m)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

April 30, 2013

1

AUIRFS/SL8405

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

181

mJ

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current

247

See Fig. 14, 15, 24a, 24b

A

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.92

40

Units

°C/W

R_θ

Junction-to-Case

JC

Junction-to-Ambient (PCB Mount)

JA

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min. Typ. Max. Units

40 ––– –––

––– 0.026 ––– V/°C Reference to 25°C, I_D= 1.0mA

Conditions

V_GS= 0V, I_D= 250µA

V

∆V_(BR)DSS/∆T_J

R_DS(on)

–––

2.2

1.9

3.0

2.3

3.9

1.0

mΩ V_GS= 10V, I_D= 100A

V_GS(th)

V

V_DS= V_GS, I_D= 100µA

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_DSS

Drain-to-Source Leakage Current

––– –––

µA

––– ––– 150

––– ––– 100

––– ––– -100

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

nA

V_GS= -20V

–––

2.3

–––

Ω

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Forward Transconductance

Min. Typ. Max. Units

Conditions

V_DS= 10V, I_D= 100A

I_D= 100A

gfs

Q_g

100 ––– –––

––– 107 161

S

Total Gate Charge

Q_gs

Q_gd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

–––

29

39

68

14

–––

V_DS=20V

nC

V

_GS= 10V

Q_sync

I_D= 100A, V_DS=0V, V_GS= 10V

V_DD= 26V

t_d(on)

t_r

Rise Time

––– 128 –––

I_D= 100A

ns

t_d(off)

Turn-Off Delay Time

–––

55

77

–––

R_G= 2.7Ω

V_GS= 10V

t_f

Fall Time

C_iss

Input Capacitance

––– 5193 –––

––– 754 –––

––– 519 –––

––– 878 –––

––– 1225 –––

V_GS= 0V

C_oss

Output Capacitance

V_DS= 25V

C_rss

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

pF ƒ = 1.0 MHz, See Fig. 5

C_osseff. (ER)

C_osseff. (TR)

V_GS= 0V, V_DS= 0V to 32V , See Fig. 11

V_GS= 0V, V_DS= 0V to 32V

April 30, 2013

2

AUIRFS/SL8405

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

D

I_S

Continuous Source Current

MOSFET symbol

––– ––– 193

A

(Body Diode)

Pulsed Source Current

showing the

integral reverse

G

I_SM

––– ––– 904

S

(Body Diode)

p-n junction diode.

V_SD

Diode Forward Voltage

Peak Diode Recovery

Reverse Recovery Time

–––

0.9

1.7

44

45

44

46

1.9

1.3

V

T_J= 25°C, I_S= 100A, V_GS= 0V

dv/dt

t_rr

––– V/ns T_J= 175°C, I_S= 100A, V_DS= 40V

–––

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 34V,

ns

I_F= 100A

di/dt = 100A/µs

Q_rr

Reverse Recovery Charge

nC

A

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 120A. Note that

current limitations arising from heating of the device leads may

occur with some lead mounting arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.036mH, R_G= 50Ω,

I_AS= 100A, V_GS=10V. Part not recommended for use above

this value.

ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques

refer to application note #AN-994.

.

R_θis measured at T_Japproximately 90°C.

R_θJCvalue shown is at time zero.

I_SD≤ 100A, di/dt ≤ 1295A/µs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

3

April 30, 2013

AUIRFS/SL8405

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

V

60µs PULSE WIDTH

≤

60µs PULSE WIDTH

≤

Tj = 175°C

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I

= 100A

= 10V

D

V

GS

T

= 175°C

J

T

5

= 25°C

J

V

= 10V

DS

≤60µs PULSE WIDTH

1.0

2

3

4

6

7

8

9

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

I = 100A

D

C

+ C , C

SHORTED

ds

iss

gs

gd

12.0

10.0

8.0

V

= 32V

= 20V

= C

DS

rss

oss

gd

= C + C

ds

gd

C

iss

C

oss

6.0

C

rss

4.0

2.0

100

0.0

1

10

, Drain-to-Source Voltage (V)

100

0

20

40

60

80

100 120 140

V

Q , Total Gate Charge (nC)

G

DS

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

April 30, 2013

4

AUIRFS/SL8405

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

T

= 175°C

J

100µsec

1msec

Limited by package

T

= 25°C

J

10msec

1

DC

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

1.0

0.1

1

10

100

0.2

0.6

1.0

1.4

1.8

2.2

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

50

48

46

44

42

40

200

150

100

50

Id = 1.0mA

Limited By Package

0

-60 -40 -20 0 20 40 60 80 100120140160180

25

50

75

100

125

150

175

T , Temperature ( °C )

J

T

, Case Temperature (°C)

C

Fig 9. Maximum Drain Current vs.

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

800

700

600

500

400

300

200

100

0

I

D

TOP

17A

36A

BOTTOM 100A

-5

0

5

10 15 20 25 30 35 40 45

Drain-to-Source Voltage (V)

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

V

DS,

Fig 11. Typical C_OSSStored Energy

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

5

April 30, 2013

AUIRFS/SL8405

10

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.001

Notes:

SINGLE PULSE

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τj = 25°C and

Tstart = 150°C.

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

200

180

160

140

120

100

80

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

I

D

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

60

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

40

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

20

0

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

25

50

75

100

125

150

175

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

April 30, 2013

6

AUIRFS/SL8405

8.0

6.0

4.0

2.0

0.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

I

= 100A

D

I

= 100µA

= 1.0mA

= 1.0A

D

T

= 125°C

J

T = 25°C

J

4

6

8

10 12 14

16 18 20

-75 -50 -25

0

25 50 75 100 125 150 175

T , Temperature ( °C )

J

V

Gate -to -Source Voltage (V)

GS,

Fig 16. On-Resistance vs. Gate Voltage

Fig 17. Threshold Voltage vs. Temperature

10

200

I = 60A

F

V

= 34V

V

= 34V

R

8

6

4

2

0

T = 25°C

J

150

100

50

T = 125°C

J

T = 125°C

J

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig. 19 - Typical Stored Charge vs. di_f/dt

Fig. 18 - Typical Recovery Current vs. di_f/dt

12

10

8

200

150

100

50

I = 100A

F

I = 100A

F

V

= 34V

V

= 34V

R

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

Fig. 20 - Typical Recovery Current vs. di_f/dt

7

April 30, 2013

AUIRFS/SL8405

60

50

40

30

20

10

0

V

= 5.5V

= 6.0V

= 7.0V

= 8.0V

=10V

GS

0

100

200

300

400

500

I , Drain Current (A)

D

Fig 22. Typical On-Resistance vs. Drain Current

April 30, 2013

8

AUIRFS/SL8405

Driver Gate Drive

P.W.

Period

D =

D.U.T

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Current

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 24b. Unclamped Inductive Waveforms

Fig 24a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 25a. Switching Time Test Circuit

Fig 25b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2µF

12V

.3µF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 26a. Gate Charge Test Circuit

Fig 26b. Gate Charge Waveform

9

April 30, 2013

AUIRFS/SL8405

D²Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D²Pak (TO-263AB) Part Marking Information

PartNumber

AUIRFS8405

DateCode

Y= Year

WW= Work Week

IRLogo

YWWA

A=Automotive,LeadFree

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

April 30, 2013

10

AUIRFS/SL8405

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

PartNumber

AUIRFSL8405

DateCode

Y= Year

WW= Work Week

IRLogo

YWWA

A=Automotive,LeadFree

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

11

April 30, 2013

AUIRFS/SL8405

D²Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

4

3

April 30, 2013

12

AUIRFS/SL8405

Qualification Information^†

Automotive

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the higher

Automotive level.

TO-262

D²PAK

N/A

MSL1

Class M3 (+/- 400V)^††

Machine Model

AEC-Q101-002

Class H1C (+/- 2000V)^††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 2000V)^††

AEC-Q101-005

Charged Device Model

Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Highest passing voltage.

13

April 30, 2013

AUIRFS/SL8405

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at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow

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are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.

Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be

responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel:(310)252-7105

April 30, 2013

14


型号：	AUIRFS8405TRR
厂家：	Infineon
描述：	Advanced Process Technology New Ultra Low On-Resistance 先进的工艺技术新的超低导通电阻
文件：	总14页 (文件大小：357K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFS8405TRR [INFINEON]

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