AUIRL7766M2TR_技术文档

PD - 97648

AUIRL7766M2TR

AUIRL7766M2TR1

AUTOMOTIVE GRADE

Automotive DirectFET^®Power MOSFET

V_(BR)DSS

R_DS(on)typ.

100V

•

Advanced Process Technology

Optimized for Automotive DC-DC and

other Heavy Load Applications

Logic Level Gate Drive

Exceptionally Small Footprint and Low Profile

High Power Density

8.0m

Ω

max.

I_{D (Silicon Limited)}

Q_g

10m

Ω

•

51A

44nC

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and

Reliability

Lead Free, RoHS Compliant and Halogen Free

Automotive Qualified *

S

G

D

•

DirectFET^®ISOMETRIC

M4

Applicable DirectFET® Outline and Substrate Outline

SB

SC

M2

M4

L4

L6

L8

Description

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The

DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement

specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature

and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high

current automotive applications.

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

100

Drain-to-Source Voltage

Gate-to-Source Voltage

V

DS

GS

V

± 16

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current

51

I

@ T = 25°C

C

D

36

@ T = 100°C

C

A

10

@ T_A= 25°C

204

DM

62.5

P

@T_C= 25°C

Power Dissipation

D

W

2.5

Power Dissipation

P

@T_A= 25°C

D

E_AS

61

237

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

mJ

E_AS(tested)

I_AR

See Fig. 18a,18b,16,17

A

E_AR

Repetitive Avalanche Energy

mJ

270

Peak Soldering Temperature

T

P

-55 to + 175

°C

Operating Junction and

J

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

Max.

60

Units

°C/W

W/°C

R_θJA

Junction-to-Ambient

Junction-to-Can

–––

12.5

20

R_θJA

–––

2.4

R_θJA

R_θJCan

R_θJ-PCB

–––

1.0

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.42

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

1

03/18/11

AUIRL7766M2TR/TR1

Static Electrical Characteristics @ T_J= 25°C (unless otherwise stated)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 5.0mA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

100

–––

V

ΔV_(BR)DSS/ΔT_J

R_DS(on)

–––

0.067

–––

V

_GS= 10V, I_D= 31A

_GS= 4.5V, I_D= 26A

–––

1.0

8.0

8.7

10

10.5

2.5

Ω

m

V_GS(th)

Gate Threshold Voltage

V

–––

-7.3

–––

0.88

–––

V_DS= V_GS, I_D= 150μA

Δ

V_GS(th)/ T_J

Gate Threshold Voltage Coefficient

–––

110

–––

––– mV/°C

V

_DS= 25V, I_D= 31A

–––

5.0

S

gfs

R_G

I_DSS

Forward Transconductance

Gate Resistance

Drain-to-Source Leakage Current

Ω

μA

V_DS= 100V, V_GS= 0V

V

_DS= 100V, V_GS= 0V, T_J= 125°C

250

100

-100

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

_GS= 16V

_GS= -16V

nA

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise stated)

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

Q_gs1

V

_DS= 50V

–––

44

9.6

66

V_GS= 4.5V

I_D= 31A

Pre-Vth Gate-to-Source Charge

–––

Q_gs2

Q_gd

Post-Vth Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

4.5

nC

See Fig.11

19

Q_godr

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

10.9

23.5

35

Q_sw

V_DS= 16V, V_GS= 0V

_DD= 50V, V_GS= 10V

I_D= 31A

Q_oss

t_d(on)

Output Charge

Turn-On Delay Time

Rise Time

nC

ns

V

16

t_r

24

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R

_G= 6.8Ω

120

49

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V

_GS= 0V

5305

460

195

2735

270

370

_DS= 25V

pF

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

V

_GS= 0V, V_DS= 80V, f=1.0MHz

V_GS= 0V, V_DS= 0V to 80V

Diode Characteristics @ T_J= 25°C (unless otherwise stated)

Conditions

MOSFET symbol

showing the

Parameter

Min.

Typ.

Max. Units

I_S

Continuous Source Current

(Body Diode)

D

–––

51

A

G

I_SM

integral reverse

Pulsed Source Current

(Body Diode)

–––

204

S

p-n junction diode.

I_S= 31A, V_GS= 0V

I_F= 31A, V_DD= 25V

di/dt = 100A/μs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

45

1.3

68

V

ns

nC

Q_rr

83

125

Mounted on minimum footprint full size

board with metalized back and with small

clip heatsink (still air)

Mounted to a PCB with small

clip heatsink (still air)

Surface mounted on 1 in. square Cu

(still air).

Notes through are on page 11

2

www.irf.com

AUIRL7766M2TR/TR1

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

MEDIUM-CAN

MSL1, 260°C

Class M4 (+/- 800V) ^†††

Machine Model

AEC-Q101-002

Class H2 (+/- 3000V) ^†††

AEC-Q101-001

ESD

Human Body Model

N/A

AEC-Q101-005

Yes

Charged Device

Model

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http://www.irf.com

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage.

www.irf.com

3

AUIRL7766M2TR/TR1

1000

100

10

1000

VGS

15V

10V

7.0V

4.5V

3.5V

3.0V

2.8V

2.5V

VGS

15V

10V

7.0V

4.5V

3.5V

3.0V

2.8V

2.5V

60μs PULSE WIDTH

Tj = 175°C

60μs PULSE WIDTH

Tj = 25°C

≤

TOP

100

10

1

BOTTOM

2.5V

1

0.1

1

10

100

1000

0.1

1

10

100

1000

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

25

20

15

10

5

40

30

20

10

0

I

= 31A

D

T

= 125°C

J

T

= 125°C

J

T

= 25°C

J

T

= 25°C

10

J

Vgs = 10V

0

2

4

6

8

12

14

16

0

25 50 75 100 125 150 175 200

I , Drain Current (A)

D

V

Gate -to -Source Voltage (V)

GS,

Fig 4. Typical On-Resistance vs. Drain Current

Fig 3. Typical On-Resistance vs. Gate Voltage

1000

2.5

I

= 31A

D

V

= 10V

GS

T = -40°C

J

100

10

1

T = 25°C

2.0

1.5

1.0

0.5

J

T

= 175°C

J

V

= 50V

DS

≤60μs PULSE WIDTH

0.1

1

2

3

4

5

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 5. Typical Transfer Characteristics

Fig 6. Normalized On-Resistance vs. Temperature

4

www.irf.com

AUIRL7766M2TR/TR1

1000

100

10

3.0

2.5

2.0

1.5

1.0

0.5

T

= -40°C

= 25°C

= 175°C

J

I

= 150μA

= 250μA

= 1.0mA

= 1.0A

D

V

= 0V

1.0

GS

1.0

0.0

0.2

V

0.4

0.6

0.8

1.2

-75 -50 -25

0

25 50 75 100 125 150 175

, Source-to-Drain Voltage (V)

T , Temperature ( °C )

SD

J

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 7. Typical Threshold Voltage vs. Junction Temperature

250

100000

10000

1000

V

= 0V,

= C

f = 1 MHZ

GS

C

+ C , C

SHORTED

ds

iss

gs

gd

T

= 25°C

= C

J

rss

oss

gd

= C + C

200

150

100

50

ds

gd

C

iss

T

= 175°C

oss

J

C

rss

V

= 5.0V

DS

380μs PULSE WIDTH

0

100

0

20

40

60

80

100

120

1

10

, Drain-to-Source Voltage (V)

100

I ,Drain-to-Source Current (A)

V

DS

D

Fig 9. Typical Forward Transconductance vs. Drain Current

Fig 10. Typical Capacitance vs.Drain-to-Source Voltage

60

14.0

I = 31A

D

12.0

50

40

30

20

10

0

V

= 80V

= 50V

= 20V

DS

10.0

8.0

6.0

4.0

2.0

0.0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

T

, Case Temperature (°C)

Q , Total Gate Charge (nC)

C

G

Fig 12. Maximum Drain Current vs. Case Temperature

Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage

www.irf.com

5

AUIRL7766M2TR/TR1

1000

250

200

150

100

50

OPERATION IN THIS AREA

I

D

LIMITED BY R

(on)

DS

TOP

6.7A

17A

100μsec

100

10

1

BOTTOM 31A

1msec

10msec

DC

Tc = 25°C

Tj = 175°C

Single Pulse

0

0.1

25

50

75

100

125

150

175

0

1

10

100

1000

V

, Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

J

DS

Fig 13. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy vs. Temperature

10

D = 0.50

1

0.20

0.10

Ri (°C/W) τi (sec)

0.05

0.1

R₁

R₂

R₃

R₄

0.07641 0.0000210

0.36635 0.0007371

0.94890 0.0391496

1.00767 0.0073206

τ

0.02

τ

^Jτ_J

τ

^Cτ

0.01

¹τ₁

Ci= τi/Ri

τ

²τ₂

³τ₃

⁴τ₄

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

1

0.1

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 16. Typical Avalanche Current vs.Pulsewidth

6

www.irf.com

AUIRL7766M2TR/TR1

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 18a, 18b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed

70

60

50

40

30

20

10

0

TOP

BOTTOM 1.0% Duty Cycle

= 31A

Single Pulse

I

D

T_jmax(assumed as 25°C in Figure 16, 17).

t

_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

_thJC(D, t_av) = Transient thermal resistance, see figure 15)

25

50

75

100

125

150

175

Z

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 17. Maximum Avalanche Energy vs. Temperature

V

15V

(BR)DSS

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V_GS

20V

0.01

t

Ω

p

I

AS

Fig 18a. Unclamped Inductive Test Circuit

Fig 18b. Unclamped Inductive Waveforms

Id

Vds

L

Vgs

VCC

DUT

0

20K

1K

Vgs(th)

Fig 19a. Gate Charge Test Circuit

Qgs1

Qgs2

Qgodr

Qgd

R_D

V_DS

Fig 19b. Gate Charge Waveform

V_GS

D.U.T.

V

DS

R_G

+

-

90%

V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

www.irf.com

7

AUIRL7766M2TR/TR1

DirectFET^®Board Footprint, M4 (Medium Size Can).

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations

G = GATE

D = DRAIN

S = SOURCE

D

S

G

8

www.irf.com

AUIRL7766M2TR/TR1

DirectFET^®Outline Dimension, M4 Outline (Medium Size Can).

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.250

0.199

0.156

0.018

0.024

0.032

0.017

0.047

0.094

0.142

0.029

0.007

0.003

A

B

C

D

E

F

6.25

4.80

3.85

0.35

0.58

0.78

0.38

1.10

2.30

3.50

0.68

0.09

0.02

6.35

5.05

3.95

0.45

0.62

0.82

0.42

1.20

2.40

3.60

0.74

0.17

0.08

0.246

0.189

0.152

0.014

0.023

0.031

0.015

0.043

0.090

0.138

0.027

0.003

0.001

G

H

J

K

L

L1

M

P

R

Dimensions are shown in

millimeters (inches)

DirectFET^®Part Marking

"AU" = GATE AND

AUTOMOTIVE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

9

AUIRL7766M2TR/TR1

DirectFET^®Tape & Reel Dimension (Showing component orientation).

LOADED TAPE FEED DIRECTION

F

D

B

A

H

G

H

E

G

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as AUIRL7766M2TR). For 1000 parts on 7"

reel, order AUIRL7766M2TR1

DIMENSIONS

REEL DIMENSIONS

IMPERIAL

METRIC

MIN

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

METRIC

MAX

IMPERIAL

METRIC

MIN MAX

IMPERIAL

0.311

0.154

0.469

0.215

0.201

0.256

0.059

A

B

C

D

E

F

7.90

3.90

11.90

5.45

5.10

6.50

1.50

MIN

12.992

0.795

0.504

0.059

3.937

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

CODE

MAX

N.C

MIN

A

B

C

D

E

F

330.0

20.2

12.8

1.5

177.77

19.06

13.5

1.5

N.C

13.2

N.C

18.4

14.4

15.4

N.C

0.75

0.53

0.059

2.31

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

G

H

0.488

0.469

0.47

12.4

11.9

0.063

1.60

Notes:

Starting T_J= 25°C, L = 0.13mH, R_G= 50Ω, I_AS= 31A,Vgs = 20V.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Used double sided cooling, mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET® Website.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

R is measured at T_Jof approximately 90°C.

θ

10

www.irf.com

AUIRL7766M2TR/TR1

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the

right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time

and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry

and / or customer specific requirements with regards to product discontinuance and process change notification. All products are

sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s

standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty.

Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and

applications using IR components. To minimize the risks with customer products and applications, customers should provide ad-

equate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is

an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties

may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service

voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business

practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could

create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or

unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are

specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military

specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is

solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection

with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are

designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers

acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any

failure to meet such requirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

www.irf.com

11


型号：	AUIRL7766M2TR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 10A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5 开关脉冲晶体管
文件：	总11页 (文件大小：237K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRL7766M2TR [INFINEON]

相关型号：

AUIRL7766M2TR_15

AUIRLI2505

AUIRLL014N

AUIRLL014NTR

AUIRLL024N

AUIRLL024NTR

AUIRLL024Z

AUIRLL024ZTR

AUIRLL2705

AUIRLL2705TR

AUIRLR014N

AUIRLR014NTR