AUIRLL024Z [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | AUIRLL024Z |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总13页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97762
AUTOMOTIVE GRADE
AUIRLL024Z
HEXFET® Power MOSFET
Features
●
●
●
●
●
Advanced Process Technology
D
V(BR)DSS
55V
UltraLowOn-Resistance
150°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
RDS(on) typ.
48m
60m
G
max.
S
ID
5.0A
●
●
Lead-Free,RoHSCompliant
Automotive Qualified *
Description
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
D
G
SOT-223
AUIRLL024Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
5.0
Units
I
I
I
@ TA = 25°C
@ TA = 70°C
D
D
4.0
A
40
DM
2.8
P
P
@TA = 25°C Power Dissipation
D
D
1.0
Power Dissipation
W
W/°C
V
@TA = 25°C
0.02
± 16
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
21
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
AS (tested )
38
IAR
EAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
mJ
-55 to + 150
Operating Junction and
T
T
J
Storage Temperature Range
°C
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
45
Units
RJA
RJA
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
°C/W
–––
120
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/28/12
AUIRLL024Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
––– 0.049 –––
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
GS = 10V, ID = 3.0A
V(BR)DSS
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.0
48
60
80
V
m
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
–––
–––
–––
–––
VGS = 5.0V, ID = 3.0A
VGS = 4.5V, ID = 3.0A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 3.0A
100
3.0
–––
20
VGS(th)
Gate Threshold Voltage
V
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
7.5
S
–––
–––
–––
–––
μA
V
DS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
GS = -16V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1.5
4.0
8.6
33
11
ID = 3.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
V
V
DS = 44V
GS = 5.0V
VDD = 28V
ID = 3.0A
td(off)
tf
RG = 56
VGS = 5.0V
VGS = 0V
Turn-Off Delay Time
Fall Time
20
15
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
380
66
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
36
pF
220
53
V
V
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
93
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
S
Continuous Source Current
–––
–––
5.0
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
40
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
15
1.3
23
14
V
T = 25°C, I = 3.0A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 3.0A, VDD = 28V
J F
di/dt = 100A/μs
rr
Q
t
9.1
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 4.8mH
This value determined from sample failure population,
starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.0A,
VGS =10V.
RG = 25, IAS = 3.0A, VGS =10V.
Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
0 to 80% VDSS
.
2
www.irf.com
AUIRLL024Z
Qualification Information†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
SOT-223
MSL1
Class M1B (+/- 100V)††
AEC-Q101-002
Moisture Sensitivity Level
Machine Model
Class H0 (+/- 250V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
www.irf.com
3
AUIRLL024Z
100
10
1
100
10
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
3.0V
1
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
T = 25°C
J
8
T
= 150°C
J
10
1
T
= 150°C
J
6
4
2
0
T
= 25°C
V
J
V
= 10V
DS
300μs PULSE WIDTH
= 10V
DS
60μs PULSE WIDTH
0.1
0
2
4
6
8
10
0
2
4
6
8
10
12
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
www.irf.com
AUIRLL024Z
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 3.0A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
= 44V
rss
oss
gd
= C + C
DS
V
V
= 28V
= 11V
ds
gd
DS
DS
C
iss
C
C
oss
rss
10
1
10
100
0
1
2
3
4
5
6
7
8
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
10
100μsec
1
T
= 25°C
0.1
J
1msec
10msec
0.01
0.001
0.0001
DC
T
= 25°C
A
Tj = 150°C
V
= 0V
GS
Single Pulse
0
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
0.1
1.0
10
100
1000.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
nce
Forward Voltage
www.irf.com
5
AUIRLL024Z
2.0
1.5
1.0
0.5
5
4
3
2
1
0
I
= 3.0A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
T
, Ambient Temperature (°C)
A
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) i (sec)
5.3396 0.000805
0.1
J J
C
11
2 2
33
19.881 0.706300
0.01
0.001
0.0001
19.771
20.80000
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
www.irf.com
AUIRLL024Z
15V
100
80
60
40
20
0
I
D
TOP
3.0A
0.80A
BOTTOM 0.69A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
V
G
Charge
2.0
1.5
1.0
I
= 250μA
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
-75 -50 -25
0
25
50
75 100 125 150
0
T
, Temperature ( °C )
1K
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
AUIRLL024Z
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
1
0.1
0.05
0.10
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
25
20
15
10
5
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 3.0A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
www.irf.com
AUIRLL024Z
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRLL024Z
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
PartNumber
AUL024Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRLL024Z
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
NOTES :
MAX.
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
www.irf.com
11
AUIRLL024Z
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
95
AUIRLL024Z
SOT-223
Tube
AUIRLL024Z
Tape and Reel
2500
AUIRLL024ZTR
12
www.irf.com
AUIRLL024Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and
that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
13
相关型号：
AUIRLL2705TR
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
INFINEON
AUIRLR024Z
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
INFINEON
©2020 ICPDF网 联系我们和版权申明