BC847PNE6433 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon;
| 型号： | BC847PNE6433 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon |
| 文件： | 总10页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846PN/UPN_BC847PN
NPN/PNP Silicon AF Transistor Arrays
• For AF input stage and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
transistor in one package
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC846PN
BC846UPN
BC847PN
C1
6
B2
5
E2
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
Marking
1Os
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BC846PN
BC846UPN
BC847PN
1Os
1Ps
1Pb-containing package may be available upon special request
2007-04-20
1
BC846PN/UPN_BC847PN
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC846PN/UPN
BC847PN
V
V
V
V
CEO
CES
CBO
EBO
tot
65
45
Collector-emitter voltage
BC846PN/UPN
BC847PN
80
50
Collector-base voltage
BC846PN/UPN
BC847PN
80
50
6
Emitter-base voltage
Collector current
100
200
mA
I
C
Peak collector current
Total power dissipation-
I
CM
mW
P
T ≤ 115°C, BC846PN, BC847PN
250
250
S
T ≤ 118°C, BC846UPN
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
thJS
BC846PN, BC847PN
≤ 140
≤ 130
BC846UPN
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
2
BC846PN/UPN_BC847PN
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
I = 10 mA, I = 0 , BC846PN/UPN
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
65
45
-
-
-
-
C
B
I = 10 mA, I = 0 , BC847PN
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC846PN/UPN
80
50
-
-
-
-
C
E
I = 10 µA, I = 0 , BC847PN
C
E
Collector-emitter breakdown voltage
I = 10 µA, V = 0 , BC846PN/UPN
80
50
-
-
-
-
C
BE
I = 10 µA, V = 0 , BC847PN
C
BE
Emitter-base breakdown voltage
I = 1 µA, I = 0
6
-
-
(BR)EBO
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 50 V, I = 0
-
-
-
-
0.015
5
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
DC current gain-
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
200
450
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
90
300
650
C
B
I = 100 mA, I = 5 mA
200
C
B
1)
Base emitter saturation voltage-
I = 10 mA, I = 0.5 mA
-
-
700
900
-
-
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base-emitter voltage-
I = 2 mA, V = 5 V
BE(ON)
580
-
660
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1
Pulse test: t 300µs, D = 2%
2007-04-20
3
BC846PN/UPN_BC847PN
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
-
-
-
-
4.5
2
-
-
-
-
kΩ
11e
12e
21e
22e
C
CE
-4
10
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
C
CE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
C
CE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz
µS
C
CE
2007-04-20
4
BC846PN/UPN_BC847PN
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 20
CE
C
CEsat
FE
EHP00365
EHP00367
10 2
103
mA
5
100 C
h FE
Ι C
100 C
25 C
-50 C
25 C
-50 C
102
5
101
5
101
5
100
5
10 -1
0
100
10-2
5 10 -1
5 10 0
5 101
10 2
mA
0.1
0.2
0.3
0.4
V
0.5
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CBO
EHP00381
EHP00364
10 4
nA
102
ΙCB0
Ι C
mA
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
10 1
5
100
5
100
5
10-1
0
10 -1
0.2
0.4
0.6
0.8
V
1.2
0
50
100
150
C
VBEsat
TA
2007-04-20
5
BC846PN/UPN_BC847PN
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 5 V, f = 100 MHz
Emitter-base capacitance C = ƒ(V )
eb EB
CE
EHP00363
103
12
pF
MHz
5
f T
10
9
8
7
6
5
4
3
2
1
0
102
5
CEB
CCB
101
V
10-1
5
10 0
5
101
10 2
0
4
8
12
16
22
mA
V
(V )
CB EB
Ι C
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC846PN, BC847PN
BC846UPN
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
2007-04-20
6
BC846PN/UPN_BC847PN
Permissible Pulse Load R
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC846PN, BC847PN
p
BC846PN, BC847PN
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 1
10 0
10 -1
10 0
10 -6
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC846UPN
p
BC846UPN
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
0.2
0.5
10 1
10 0
10 -1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-04-20
7
Package SC74
BC846PN/UPN_BC847PN
Package Outline
±0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
-0.06
0.15
(0.35)
6
1
5
2
4
3
+0.1
-0.05
A
0.35
0.95
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
2007-04-20
8
Package SOT363
BC846PN/UPN_BC847PN
Package Outline
±0.2
2
±0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2007-04-20
9
BC846PN/UPN_BC847PN
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
10
相关型号：
BC847PNH6327XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6
INFINEON
BC847PNH6727XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明