BFN16E6327 [INFINEON]
Transistor;
| 型号： | BFN16E6327 |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFN18
NPN Silicon High-Voltage Transistors
• Suitable for video output stages TV sets
1
2
and switching power supplies
3
2
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN19 (PNP)
Type
Marking
Pin Configuration
Package
SOT89
BFN18
DE
1=B
2=C
3=E
Maximum Ratings
Parameter
Symbol
Value
Unit
300
300
5
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CEO
CBO
EBO
200
500
100
200
1
mA
I
C
Peak collector current
Base current
I
CM
I
B
Peak base current
Total power dissipation-
I
BM
W
P
tot
T ≤ 130 °C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
≤ 20
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2005-12-12
1
BFN18
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
300
-
-
-
-
-
-
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
300
5
C
E
Emitter-base breakdown voltage
I = 100 µA, I = 0
E
C
Collector-base cutoff current
I
I
µA
V
V
= 250 V, I = 0
-
-
-
-
-
-
0.1
20
CB
CB
E
= 250 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
EBO
V
= 3 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 1 mA, V = 10 V
25
40
30
-
-
-
-
-
-
C
CE
I = 10 mA, V = 10 V
C
CE
I = 30 mA, V = 10 V
C
CE
1)
Collector-emitter saturation voltage
I = 20 mA, I = 2 mA
V
V
-
-
0.5
V
CEsat
BEsat
C
B
1)
Base emitter saturation voltage
I = 20 mA, I = 2 mA
-
-
0.9
C
B
AC Characteristics
-
-
70
-
-
MHz
pF
Transition frequency
f
T
I = 20 MHz, V = 10 V, f = 20 MHz
C
CE
2.5
Collector-base capacitance
C
cb
V
= 30 V, f = 1 MHz
CB
1
Pulse test: t < 300µs; D < 2%
2005-12-12
2
BFN18
DC current gain h = ƒ(I )
Operating range I = ƒ(V
)
FE
C
C
CEO
V
= 10 V
T = 25°C, D = 0
CE
A
BFN 16/18
EHP00580
BFN 16/18
EHP00585
103
103
mA
5
ΙC
hFE
102
5
µs
10
102
5
s
100 µ
1ms
100 ms
101
5
DC
101
5
100
5
100
10-1
10 -1
5 10 0
5 10 1
5 10 2 mA 10 3
10 0
5
10 1
5
10 2
V
5
10 3
Ι C
VCEO
Collector current I = ƒ(V )
Collector cutoff current I
= ƒ(T )
C
BE
CBO A
V
= 10V
V
= 200 V
CBO
CE
BFN 16/18
EHP00584
BFN 16/18
EHP00582
104
103
mA
nA
Ι C
max
103
5
ΙCBO
102
5
102
5
101
5
typ
101
5
100
5
100
5
10-1
10-1
0
0.5
1.0
V
1.5
0
50
100
˚C
150
VBE
TA
2005-12-12
3
BFN18
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 10 V
Emitter-base capacitance C = ƒ(V )
eb EB
CE
BFN 16/18
EHP00583
103
90
pF
MHz
fT
70
60
50
40
30
20
10
0
102
5
CEB
CCB
22
101
10 0
5
10 1
5
10 2
5
10 3
V
0
4
8
12
16
mA
Ι C
V
(V )
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
P
/P
= ƒ(t )
totmax totDC
p
BFN 16/18
EHP00581
103
1.2
Ptotmax
PtotDC
t p
5
t p
T
W
=
D
T
102
5
D
0
=
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
10-6 10-5 10-4 10-3 10-2
s
100
0
15 30 45 60 75 90 105 120
150
°C
T
t p
S
2005-12-12
4
Package SOT89
BFN18
Package Outline
±0.1
4.5
B
±0.1
1.5
45˚
0.25
0.2 MAX.1)
±0.05
±0.2
1.6
0.15
1
2
3
1.5
±0.1
0.35
+0.2
-0.1
0.45
M
0.15
B
x3
3
0.2
B
1) Ejector pin markings possible
Foot Print
2.0
0.8
0.8
0.7
Marking Layout
Type code
BAW78D
Pin 1
Date code (Year/Month)
Manufacturer
2005, June
Example
Standard Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.2
8
Pin 1
1.6
4.3
2005-12-12
5
BFN18
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
2005-12-12
6
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