BGA7L1BN6 [INFINEON]
BGA7L1BN6 是用于 LTE 的前端低噪声放大器，覆盖 716 Mhz 至 960 Mhz 的宽频率范围，工作电压范围为 1.5 V 至 3.3 V。该器件具有单线双态控制（旁路和高电平）可以通过关闭 Vcc 启用增益模式和关闭状态。;
| 型号： | BGA7L1BN6 |
| 厂家： | 
Infineon |
| 描述： | BGA7L1BN6 是用于 LTE 的前端低噪声放大器，覆盖 716 Mhz 至 960 Mhz 的宽频率范围，工作电压范围为 1.5 V 至 3.3 V。该器件具有单线双态控制（旁路和高电平）可以通过关闭 Vcc 启用增益模式和关闭状态。 放大器 LTE |
| 文件： | 总14页 (文件大小：1161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA7L1BN6
Silicon Germanium Low Noise Amplifier for LTE
Data Sheet
Revision 3.1, 2017-03-03
RF & Protection Devices
Edition 2017-03-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2017 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA7L1BN6
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 3.1, 2017-03-03
all
Initial final version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 3.1, 2017-03-03
BGA7L1BN6
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1
2
3
4
Data Sheet
4
Revision 3.1, 2017-03-03
BGA7L1BN6
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Schematic BGA7L1BN6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 13
Data Sheet
5
Revision 3.1, 2017-03-03
BGA7L1BN6
List of Tables
List of Tables
Table 1
Table 2
Table 3
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VC,ON = 2.8 V, VC,BYP = 0 V, f = 716 - 960 MHz ...
.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 4
Data Sheet
6
Revision 3.1, 2017-03-03
Silicon Germanium Low Noise Amplifier for LTE
BGA7L1BN6
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 13.6 dB
Low noise figure: 0.75 dB
Low current consumption: 4.9 mA
Insertion Loss in bypass mode: -2.2 dB
Operating frequencies: 716 - 960 MHz
Two-state control: Bypass- and High gain-Mode
Supply voltage: 1.5 V to 3.6 V
Digital on/off switch (1V logic high level)
Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
Pb-free (RoHS compliant) package
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
VCC
C
AI
AO
ESD
GND
BGA7L1BN6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA7L1BN6
K
TSNP-6-2
Data Sheet
7
Revision 3.1, 2017-03-03
BGA7L1BN6
Features
Description
The BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHz
to 960 MHz. The LNA provides 13.6 dB gain and 0.75 dB noise figure at a current consumption of 4.9 mA in the
application configuration described in Chapter 3. In bypass mode the LNA provides an insertion loss of -2.2dB.
The BGA7L1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from
1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode).
OFF-state can be enabled by powering down Vcc.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
GND
VCC
AO
Function
Ground
1
2
3
4
5
6
DC supply
LNA output
Ground
GND
AI
LNA input
Control
C
Data Sheet
8
Revision 3.1, 2017-03-03
BGA7L1BN6
Maximum Ratings
1
Maximum Ratings
Table 2
Maximum Ratings
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
–
Max.
5.0
1)
Voltage at pin VCC
Voltage at pin AI
Voltage at pin AO
Voltage at pin C
VCC
VAI
–
–
–
–
–
–
–
–
V
0.9
V
–
–
–
–
–
–
–
VAO
VC
V
V
CC + 0.3
CC + 0.3
V
V
Voltage at GND pins
Current into pin VCC
RF input power
VGND
ICC
0.3
50
V
mA
dBm
mW
PIN
–
+25
250
Total power dissipation,
TS < 148 °C2)
Ptot
–
Junction temperature
TJ
–
–
–
–
150
85
°C
°C
°C
–
–
–
Ambient temperature range
Storage temperature range
TA
-40
-65
TSTG
150
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
9
Revision 3.1, 2017-03-03
BGA7L1BN6
Electrical Characteristics
2
Electrical Characteristics
Table 3
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VC,ON = 2.8 V, VC,BYP = 0 V, f = 716 - 960 MHz
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
1.5
–
Max.
3.6
5.9
120
150
VCC
0.4
15.1
-1.2
1.3
2.8
–
Supply voltage
Supply current
VCC
ICC
V
–
4.9
87
mA
µA
µA
V
High gain mode
Bypass mode
–
–
110
–
Bypass mode / VCC = 5.0 V
High gain mode
Bypass mode
Control voltage
VC
1.0
0
–
V
Insertion power gain
f = 840 MHz
|S21|2
NF
12.1
-3.2
–
13.6
-2.2
0.75
1.8
12
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
μs
High gain mode
Bypass mode
Noise figure2)
ZS = 50 Ω
High gain mode
Bypass mode
–
Input return loss
f = 840 MHz
RLin
RLout
1/|S12|2
tS
9
High gain mode
Bypass mode
6
9
–
Output return loss
f = 840 MHz
10
5
13
–
High gain mode
Bypass mode
8
–
Reverse isolation
17
-3.2
–
21
–
High gain mode
Bypass mode
-2.2
3
–
Power gain settling time3)
6
Bypass- to HG-mode
HG- to Bypass-mode
High gain mode
Bypass mode
–
0.2
-1
0.3
–
μs
Inband input 1dB-compression IP1dB
point, f = 840 MHz
-3
dBm
dBm
dBm
dBm
+2
0
+6
–
Inband input 3rd-order intercept IIP3
point4)
f1 = 840 MHz, f2 = f1 + 1 MHz
+5
–
High gain mode
Bypass mode
+13
+18
–
Phase shift
PS
k
-5
0
–
5
–
°
High gain mode and bypass
mode
Stability
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in chapter 3
2) PCB losses are subtracted
3) To be within 1 dB of the final gain
4) High gain mode: Input power = -30 dBm for each tone / Bypass mode: Input power = -10 dBm for each tone
Data Sheet
10
Revision 3.1, 2017-03-03
BGA7L1BN6
Application Information
3
Application Information
Application Board Configuration
N1 BGA7L1BN6
AO, 3
GND, 4
RFout
L1
C1
VCC, 2
VCC
RFin
AI, 5
C2
(optional)
C, 6
GND, 1
Ctrl
BGA7L1BN6_Schematic.vsd
Figure 2
Application Schematic BGA7L1BN6
Bill of Materials
Table 4
Name
C1
Value
Package
0402
Manufacturer
Various
Function
1nF
DC block 1)
RF bypass 2)
Input matching
SiGe LNA
C2 (optional) ≥ 1nF
0402
Various
L1
11nH
0402
Murata LQW type
Infineon
N1
BGA7L1BN6
TSNP-6-2
1) DC block might be necessary due to internal LNA bias voltage @ AI (LNA Analog Input pin). The DC block can be realized
with pre-filter (e.g. SAW)
2) RF bypass recommended to mitigate power supply noise
Note:No external DC blocking capacitor at RFout is required in typical applications as long as no DC is applied.
A list of all application notes is available at http://www.infineon.com/ltelna
Data Sheet
11
Revision 3.1, 2017-03-03
BGA7L1BN6
Package Information
4
Package Information
Top view
Bottom view
+0.02ꢀ
-0.01ꢀ
0.37ꢀ
0.02 MAX.
0.0ꢀ
0.7
1)
0.0ꢀ
0.2
3
4
2
1
ꢀ
6
0.0ꢀ
0.4
Pin 1 marking
1) Dimension applies to plated terminals
TSNP-6-2-PO V01
Figure 3
TSNP-6-2 Package Outline (top, side and bottom views)
NSMD
0.4
0.4
0.2ꢀ
0.2ꢀ
(stencil thickness 100 µm)
Stencil apertures
Copper
Solder mask
TSNP-6-2-FP V01
Figure 4
Footprint Recommendation TSNP-6-2
Type code
Monthly data code
Pin 1 marking
TSNP-6-2-MK V01
Figure 5
Marking Layout (top view)
Data Sheet
12
Revision 3.1, 2017-03-03
BGA7L1BN6
Package Information
0.ꢀ
Pin 1
marking
2
0.8ꢀ
TSNP-6-2-TP V01
Figure 6
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
Data Sheet
13
Revision 3.1, 2017-03-03
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BGA7L1N6E6327XTSA1
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
INFINEON
BGA7M1N6E6327XTSA1
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
INFINEON
BGA824N6
BGA824N6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为 1550 Mhz 到 1615 Mhz，比如 GPS、格洛纳斯、北斗、伽利略和其他导航卫星系统。在第三章（请参见数据表）应用配置中，LNA 在 3.8 mA 的电流消耗下提供 17.0 dB 增益和 0.55 dB 噪声系数。BGA824N6 基于英飞凌科技 ‘B7HF 硅锗技术。它采用 1.5 V 至 3.6 V 电源供电。
INFINEON
BGA8U1BN6
BGA8U1BN6 是用于 LTE 的前端低噪声放大器，覆盖 4.0 Ghz 至 6.0 Ghz 的宽频率范围。在应用配置中，LNA 在 4.5mA 的电流消耗下提供 13.7 dB 增益和 1.6 dB 噪声系数。在旁路模式下，LNA 提供 -7.5 dB 的插入损耗。
INFINEON
BGA8V1BN6
BGA8V1BN6 是用于 LTE 的前端低噪声放大器，覆盖 3.3 Ghz 至 3.8 Ghz 的宽频率范围。在应用配置中，LNA 在 4.2mA 的电流消耗下提供 15.0 dB 增益和 1.2 dB 噪声系数。在旁路模式下，LNA 提供 -5.3 dB 的插入损耗。 BGA8V1BN6 基于英飞凌科技 B9HF 硅锗技术。它采用 1.6 V 至 3.1 V 电源供电。该设备具有多状态控制(关闭，旁路和高增益模式)。
INFINEON
BGA9V1MN9
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios.
INFINEON
©2020 ICPDF网 联系我们和版权申明