BGA824N6 [INFINEON]
BGA824N6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为 1550 Mhz 到 1615 Mhz，比如 GPS、格洛纳斯、北斗、伽利略和其他导航卫星系统。在第三章（请参见数据表）应用配置中，LNA 在 3.8 mA 的电流消耗下提供 17.0 dB 增益和 0.55 dB 噪声系数。BGA824N6 基于英飞凌科技 ‘B7HF 硅锗技术。它采用 1.5 V 至 3.6 V 电源供电。;
| 型号： | BGA824N6 |
| 厂家： | 
Infineon |
| 描述： | BGA824N6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为 1550 Mhz 到 1615 Mhz，比如 GPS、格洛纳斯、北斗、伽利略和其他导航卫星系统。在第三章（请参见数据表）应用配置中，LNA 在 3.8 mA 的电流消耗下提供 17.0 dB 增益和 0.55 dB 噪声系数。BGA824N6 基于英飞凌科技 ‘B7HF 硅锗技术。它采用 1.5 V 至 3.6 V 电源供电。 放大器 全球定位系统 |
| 文件： | 总18页 (文件大小：1194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA824N6
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation
Satellite Systems (GNSS)
Features
•
•
•
•
•
•
•
•
•
Operating frequencies: 1164 - 1615 MHz
Insertion power gain: 17.0 dB
Input 1 dB compression point: -6 dBm
Low noise figure: 0.55 dB
Low current consumption: 3.8 mA
Digital on/off switch
0.7 x 1.1 mm2
Ultra small TSNP-6-2 and TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Application
Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Block diagram
VCC PON
AI
AO
ESD
GND
BGA824N6_Blockdiagram.vsd
Data Sheet
www.infineon.com
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Data Sheet
2
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Features
1
Features
•
•
•
•
•
•
•
•
•
Insertion power gain: 17.0 dB
Out-of-band input 3rd order intercept point: +7 dBm
Input 1 dB compression point: -6 dBm
Low noise figure: 0.55 dB
Low current consumption: 3.8 mA
Operating frequencies: 1164 - 1615 MHz
Digital on/off switch
Supply voltage: 1.5 V to 3.6 V
Ultra small TSNP-6-2 and TSNP-6-10 leadless package (footprint: 0.7
x 1.1 mm2)
•
•
•
•
•
B7HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Low external component count
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
VCC PON
AI
AO
ESD
GND
BGA824N6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA824N6
F
TSNP-6-2/TSNP-6-10
Data Sheet
3
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Features
Description
The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1164 MHz
to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 dB gain and 0.55 dB noise
figure at a current consumption of 3.8 mA in the application configuration described in Chapter 4. The BGA824N6
is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply
voltage.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
GND
VCC
AO
Function
1
2
3
4
5
6
Ground
DC supply
LNA output
Ground
GND
AI
LNA input
Power on control
PON
Data Sheet
4
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Maximum Ratings
2
Maximum Ratings
Table 2
Maximum Ratings
Parameter
Symbol
VCC
Values
Typ.
Unit
Note or
Test Condition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
–
Max.
3.6
1)
Voltage at pin VCC
Voltage at pin AI
–
–
–
–
–
–
–
–
V
VAI
0.9
V
–
–
–
–
–
–
–
Voltage at pin AO
Voltage at pin PON
Voltage at pin GNDRF
Current into pin VCC
RF input power
VAO
VCC + 0.3
VCC + 0.3
0.3
V
VPON
VGNDRF
ICC
V
V
23
mA
dBm
mW
PIN
–
25
Total power dissipation,
Ptot
–
60
TS < 148 °C2)
Junction temperature
TJ
–
–
–
–
-
150
85
°C
°C
°C
V
–
–
–
Ambient temperature range
Storage temperature range
ESD capability all pins
TA
-40
-55
TSTG
150
+2000
VESD_HBM -2000
according to JS-
001
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage
to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above
the specified maximum operation conditions may affect device reliability and life time.
Functionality of the device might not be given under these conditions.
Thermal Resistance
Table 3
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
25
K/W
1) For calculation of RthJA please refer to Application Note Thermal Resistance
Data Sheet
5
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Electrical Characteristics
3
Electrical Characteristics
Table 4
Electrical Characteristics f = 1550 - 1615 MHz, VCC = 1.8V1)
TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
1.5
–
Typ.
1.8
3.8
0.2
–
Max.
3.6
4.8
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON-mode
OFF-mode
ON-mode
OFF-mode
ON-mode
OFF-mode
–
–
Power On voltage
Power On current
VPON
IPON
0.8
0
Vcc
0.4
10
–
V
–
5
µA
µA
dB
–
–
1
Insertion power gain
f = 1575 MHz
Noise figure2)
f = 1575 MHz
Input return loss3)
f = 1575 MHz
Output return loss3)
f = 1575 MHz
Reverse isolation3)
f = 1575 MHz
Power gain settling time4)5)
|S21|2
NF
16.0
17.0
18.0
–
0.55
14
1.1
–
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
10
10
19
17
–
23
–
–
5
8
8
3
3
–
µs
OFF- to ON-mode
ON- to OFF-mode
OFF- to ON-mode6)
ON- to OFF-mode6)
–
–
5
µs
–
1.2
0.9
-9
µs
–
µs
Inband input 1dB-compression IP1dB
point3) f = 1575 MHz
-13
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-3
+2
+7
–
–
–
–
dBm f1 = 1575 MHz
f2 = f1 +/- 1 MHz
intercept point3)7)
Out-of-band input 3rd-order
intercept point5)8)
Stability5)
+2
> 1
dBm f1 = 1712.7 MHz
f2 = 1850 MHz
f = 20 MHz ... 10 GHz
1) Based on the application described in Figure 2 in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
5) Guaranteed by device design; not tested in production
6) 120 pF DC block capacitor at RF input
7) Input power = -30 dBm for each tone
8) Input power = -20 dBm for each tone
Data Sheet
6
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Electrical Characteristics
Table 5
TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz
Electrical Characteristics f = 1550 - 1615 MHz, VCC = 2.8V1)
Parameter
Symbol
Values
Typ.
2.8
3.9
0.2
–
Unit Note or Test Condition
Min.
1.5
–
Max.
3.6
4.9
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON-mode
OFF-mode
ON-mode
OFF-mode
ON-mode
OFF-mode
–
–
Power On voltage
Power On current
VPON
IPON
0.8
0
Vcc
0.4
15
–
V
–
10
µA
µA
dB
–
–
1
Insertion power gain
f = 1575 MHz
Noise figure2)
f = 1575 MHz
Input return loss3)
f = 1575 MHz
Output return loss3)
f = 1575 MHz
Reverse isolation3)
f = 1575 MHz
Power gain settling time4)5)
|S21|2
NF
16.1
17.1
18.1
–
0.55
15
1.1
–
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
10
10
19
18
–
23
–
–
5
8
8
3
3
–
µs
OFF- to ON-mode
ON- to OFF-mode
OFF- to ON-mode6)
ON- to OFF-mode6)
–
–
5
µs
–
1.2
0.9
-6
µs
–
µs
Inband input 1dB-compression IP1dB
point3) f = 1575 MHz
-10
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-2
+3
+7
–
–
–
–
dBm f1 = 1575 MHz
f2 = f1 +/- 1 MHz
intercept point3)7)
Out-of-band input 3rd-order
intercept point5)8)
Stability5)
+2
> 1
dBm f1 = 1712.7 MHz
f2 = 1850 MHz
f = 20 MHz ... 10 GHz
1) Based on the application described in Figure 2 in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
5) Guaranteed by device design; not tested in production
6) 120 pF DC block capacitor at RF input
7) Input power = -30 dBm for each tone
8) Input power = -20 dBm for each tone
Data Sheet
7
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Electrical Characteristics
Table 6
TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1164 - 1300 MHz
Electrical Characteristics f = 1164 - 1300 MHz, VCC = 1.8V1)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
1.5
–
Typ.
1.8
3.8
0.2
–
Max.
3.6
4.8
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON-mode
OFF-mode
ON-mode
OFF-mode
ON-mode
OFF-mode
–
–
Power On voltage
Power On current
VPON
IPON
0.8
0
Vcc
0.4
10
–
V
–
5
µA
µA
dB
–
–
1
Insertion power gain
f = 1214 MHz
Noise figure2)
f = 1214 MHz
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power gain settling time4)5)
|S21|2
NF
16.4
17.9
19.4
–
0.70
15
1.25
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
10
10
19
–
–
–
18
25
–
5
8
8
3
3
–
µs
OFF- to ON-mode
ON- to OFF-mode
OFF- to ON-mode6)
ON- to OFF-mode6)
–
–
5
µs
–
1.2
0.9
-12
µs
–
µs
Inband input 1dB-compression IP1dB
point3) f = 1214 MHz
-16
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-11
-3
-6
–
dBm f1 = 1214 MHz
f2 = f1 +/- 1 MHz
intercept point3)7)
Out-of-band input 3rd-order
intercept point5)8)
Stability5)
+1.3
–
dBm f1 = 1850 MHz
f2 = 2500 MHz
> 1
–
f = 20 MHz ... 10 GHz
1) Based on the application described in Figure 3 in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
5) Guaranteed by device design; not tested in production
6) 120 pF DC block capacitor at RF input
7) Input power = -30 dBm for each tone
8) Input power = -25 dBm for each tone
Data Sheet
8
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Electrical Characteristics
Table 7
TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1164 - 1300 MHz
Electrical Characteristics f = 1164 - 1300 MHz, VCC = 2.8V1)
Parameter
Symbol
Values
Typ.
2.8
3.9
0.2
–
Unit Note or Test Condition
Min.
1.5
–
Max.
3.6
4.8
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON-mode
OFF-mode
ON-mode
OFF-mode
ON-mode
OFF-mode
–
–
Power On voltage
Power On current
VPON
IPON
0.8
0
Vcc
0.4
15
–
V
–
10
µA
µA
dB
–
–
1
Insertion power gain
f = 1214 MHz
Noise figure2)
f = 1214 MHz
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power gain settling time4)5)
|S21|2
NF
16.5
18.0
19.5
–
0.70
16
1.25
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
10
10
19
–
–
–
18
26
–
5
8
8
3
3
–
µs
OFF- to ON-mode
ON- to OFF-mode
OFF- to ON-mode6)
ON- to OFF-mode6)
–
–
5
µs
–
1.2
0.9
-9
µs
–
µs
Inband input 1dB-compression IP1dB
point3) f = 1214 MHz
-13
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-10
-3
-5
–
dBm f1 = 1214 MHz
f2 = f1 +/- 1 MHz
intercept point3)7)
Out-of-band input 3rd-order
intercept point5)8)
Stability5)
+1.3
–
dBm f1 = 1850 MHz
f2 = 2500 MHz
> 1
–
f = 20 MHz ... 10 GHz
1) Based on the application described in Figure 3 in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
5) Guaranteed by device design; not tested in production
6) 120 pF DC block capacitor at RF input
7) Input power = -30 dBm for each tone
8) Input power = -25 dBm for each tone
Data Sheet
9
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Application Information
4
Application Information
Application Board Configuration f = 1550 - 1615 MHz
N1 BGA824N6
AO, 3
GNDRF, 4
RFout
C1
(optional)
L1
VCC, 2
VCC
RFin
AI, 5
C2
(optional)
PON, 6
GND, 1
PON
BGA824N6_Schematic.vsd
Figure 2
Application Schematic BGA824N6 f = 1550 - 1615 MHz
Bill of Materials
Table 8
Name
Value
Package
0402
Manufacturer
Various
Function
C1 (optional) 1nF
DC block1)
C2 (optional) ≥ 10nF2)
0402
Various
RF bypass 3)
Input matching
SiGe LNA
L1
6.8nH
0402
Murata LQW type
N1
BGA824N6
TSNP-6-2 and TSNP- Infineon
6-10
1) DC block might be realized with pre-filter in GNSS application
2) For data sheet characteristics 1µF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes
Data Sheet
10
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Application Information
Application Board Configuration f = 1164 - 1300 MHz
N1 BGA824N6
L2
AO, 3
VCC, 2
GND, 1
GNDRF, 4
RFout
C1
(optional)
L1
C3
VCC
RFin
AI, 5
C2
(optional)
PON, 6
PON
BGA824N6_Schematic_L2L5.vsd
Figure 3
Application Schematic BGA824N6 f = 1164 - 1300 MHz
Bill of Materials
Table 9
Name
Value
Package
0402
Manufacturer
Various
Function
C1 (optional) 1nF
DC block1)
RF bypass 3)
C2 (optional) ≥ 10nF2)
0402
Various
C3
L1
L2
N1
3.9pF
0402
Various
Output matching
Input matching
12nH
0402
Murata LQW type
Murata LQW type
3.9nH
0402
Output matching
SiGe LNA
BGA824N6
TSNP-6-2 and TSNP- Infineon
6-10
1) DC block might be realized with pre-filter in GNSS application
2) For data sheet characteristics 1µF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes
Data Sheet
11
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Application Information
BGAx24N6_Application_Board.vsd
Figure 4
Drawing of Application Board
Vias
Vias
Ro4003, 0.2mm
FR4,0.8mm
Copper
35µm
BGA824N6_application_board_sideview.vsd
Figure 5
Application Board Cross-Section
Data Sheet
12
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Package Information
5
Package Information
Figure 6
TSNP-6-2 Package Outline (top, side and bottom views)
Figure 7
TSNP-6-10 Package Outline (top, side and bottom views)
Data Sheet
13
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Package Information
Figure 8
Footprint Recommendation TSNP-6-2 and TSNP-6-10
TSNP-6-2_MK.vsd
Figure 9
Marking Layout TSNP-6-2 (top view)
TSNP-6-10_MK.vsd
Figure 10 Marking Layout TSNP-6-10 (top view)
Data Sheet
14
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Package Information
Figure 11 Date Code Marking TSNP-6-2 and TSNP-6-10
Figure 12 Tape & Reel Dimensions TSNP-6-2 (reel diameter 180 mm, pieces/reel 15000)
Data Sheet
15
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Package Information
Pin 1
marking
TSNP-6-10_TP.vsd
Figure 13 Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000)
Data Sheet
16
Revision 3.5
2023-01-12
BGA824N6
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 3.5, 2023-01-12
6-9
Update Power On Voltage in On-Mode
Data Sheet
17
Revision 3.5
2023-01-12
Please read the Important Notice and Warnings at the end of this document
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2023-01-12
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
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