BGS12P2L6 [INFINEON]
射频开关;
| 型号： | BGS12P2L6 |
| 厂家： | 
Infineon |
| 描述： | 射频开关 开关 射频 射频开关 |
| 文件： | 总13页 (文件大小：874K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS12P2L6
SPDT general purpose switch for high power applications
Features
• High linearity up to 37 dBm input power
• Low insertion loss and high port to port isolation up to 6 GHz
• Low current consumption
• On-chip control logic
• Ultra low profile leadless plastic package
• RoHS and WEEE compliant package
0.7x1.1mm2
Potential Applications
The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from
0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block Diagram
Please read the Important Notice and Warnings at the end of this document
Revision 2.0
2019-07-04
www.infineon.com
BGS12P2L6
SPDT general purpose switch for high power applications
Table of Contents
Table of Contents
1
Features
2
3
4
5
8
9
2
3
4
5
6
Maximum Ratings
Operation Ranges
RF Characteristics
Application Information
Package Information
1
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Features
1 Features
•
RF CMOS SPDT antenna switch with power handling capability of up to
37 dBm
• Suitable for multi-mode LTE and WCDMA applications
• Low insertion loss and harmonics generation
• 0.05 to 6 GHz coverage
• High port-to-port isolation
• No blocking capacitors required if no DC applied on RF lines
• On-chip control logic
•
Leadless and halogen free package TSLP-6-4 with lateral size of 0.7 mm
x 1.1 mm and thickness of 0.31 mm
• No power supply decoupling required
• High EMI robustness
• RoHS and WEEE compliant package
Description
The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from
0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic
driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking
capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12P2L6 RF switch is manufactured in
Infineon’s patented MOS technology, oꢀering the performance of GaAs with the economy and integration of conventional
CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 x 1.1 mm 2 and a maximum
height of 0.31 mm.
Table 1: Ordering Information
Type
Marking
Package
BGS12P2L6
U
TSLP-6-4
2
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Maximum Ratings
2 Maximum Ratings
Table 2: Maximum Ratings at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.05
-0.5
–
Typ.
Max.
6
Frequency Range1)
f
–
–
–
–
–
GHz
V
–
Supply voltage
VDD
3.6
38
+1
–
RF input power at all RF ports
ESD capability, CDM2)
ESD capability, HBM3)
PRF,max
VESD,CDM
VESD,HBM
dBm
kV
VSWR 1:1
-1
–
-1
+1
kV
–
Each single RF-in/out port ver-
-8
–
+8
kV
sus GND, with 27 nH shunt in-
ductor
ESD capability RF ports4)
VESD,RF
Each single RF-in/out port ver-
-6
–
–
+6
80
0
kV
K/W
V
sus GND, with 56 nH shunt in-
ductor
–
Thermal resistance junction - RthJS
soldering point
68
–
Maximum DC-voltage on RF VRFDC
ports and RF-Ground
0
No DC voltages allowed on RF-
Ports
Storage temperature range
Junction temperature
TSTG
Tj
-55
–
–
–
150
125
◦C
◦C
–
–
1)There is also a DC connection between switched paths. The DC voltage at RF ports V
has to be 0 V.
RFDC
2)Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3)Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF).
4)IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.
3
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Operation Ranges
3 Operation Ranges
Table 3: Operation Ranges, at TA = −40 ◦C...85 ◦C, VDD = 1.65 V...3.4 V
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.65
–
Typ.
1.8
65
–
Max.
3.4
Supply voltage
VDD
IDD
V
–
Supply current
110
µA
V
Operating State
Control voltage Low
Control voltage High
Control current
VCtrl,L
VCtrl,H
ICtrl
-0.3
1.35
–
0.43
VDD
10
–
–
–
–
–
V
2
nA
◦C
Ambient temperature
TA
-40
25
85
Table 4: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
–
Max.
37
RF input power at all RF ports
PRF
dBm
VSWR 1:1 / 50 Ω
4
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
RF Characteristics
4 RF Characteristics
Table 5: RF Characteristics1) at TA = −40 ◦C...85 ◦C, PRF = 0 dBm, VDD= 1.65 V...3.4 V, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss1) at TA = 25 ◦C, VDD= 1.8 V
–
–
–
–
–
–
–
0.20
0.25
0.31
0.39
0.42
0.47
0.51
0.23
0.34
0.39
0.47
0.48
0.55
0.64
dB
dB
dB
dB
dB
dB
dB
617–960 MHz
960–2170 MHz
2170–2700 MHz
3300–3800 MHz
3800–4200 MHz
4400–5000 MHz
5150–5925 MHz
All TRx Ports
IL
Insertion Loss1)
All TRx Ports
–
–
–
–
–
–
–
0.20
0.25
0.31
0.39
0.42
0.47
0.51
0.28
0.38
0.40
0.50
0.52
0.62
0.74
dB
dB
dB
dB
dB
dB
dB
617–960 MHz
960–2170 MHz
2170–2700 MHz
3300–3800 MHz
3800–4200 MHz
4400–5000 MHz
5150–5925 MHz
IL
Return Loss1)
All TRx Ports
23
17
16
15
15
14
12
27
22
19
17
16
15
14
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
617–960 MHz
960–2170 MHz
2170–2700 MHz
3300–3800 MHz
3800–4200 MHz
4400–5000 MHz
5150–5925 MHz
RL
Isolation1)
42
34
32
29
28
26
24
48
40
38
35
34
31
45
39
35
32
31
29
27
54
47
43
39
37
35
34
–
–
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
617–960 MHz
960–2170 MHz
2170–2700 MHz
3300–3800 MHz
3800–4200 MHz
4400–5000 MHz
5150–5925 MHz
617–960 MHz
960–2170 MHz
2170–2700 MHz
3300–3800 MHz
3800–4200 MHz
4400–5000 MHz
5150–5925 MHz
RFin to RF1/RF2 Port
ISORFin−RFx
RF1 to RF2 Port / RF2 to RF1 Port ISORFx−RFx
30
1)Measured on Application board, without any matching components.
5
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
RF Characteristics
Table 6: RF Characteristics1) at TA = −40 ◦C...85 ◦C, PRF = 0 dBm, Supply Voltage VDD
= 1.65 V...3.4 V, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Harmonic Generation on all RF Ports2) at 50 Ω, VSWR 1:1, unless otherwise specified
–
–
–
–
–
–
–
–
–
–
–
–
–
–
-71
-62
-68
-78
-73
-72
-73
-65
-52
-57
-75
-75
-75
-73
-73
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
617–960 MHz, 35 dBm
960–2170 MHz, 33 dBm
2170–2700 MHz, 26 dBm
3300–3800 MHz, 26 dBm
3800–4200 MHz, 26 dBm
4400–5000 MHz, 26 dBm
5150–5925 MHz, 26 dBm
617–960 MHz, 35 dBm
960–2170 MHz, 33 dBm
2170–2700 MHz, 26 dBm
3300–3800 MHz, 26 dBm
3800–4200 MHz, 26 dBm
4400–5000 MHz, 26 dBm
5150–5925 MHz, 26 dBm
-75
-83
-78
-78
-78
-76
-57
-62
-81
-80
-80
-79
-79
2nd Harmonic
PH2
3nd Harmonic
PH3
Intercept Point1)
IIP2
IIP3
IIP2
IIP3
124
71
130
74
–
–
dBm
dBm
Testcases see Table 7
Testcases see Table 8
1)Measured on Application board, without any matching components.
2)Measured on Application board, with 1 nF blocking capacity between V to GND and V
to GND.
DD
CTRL
Table 7: IMD2 Testcases
Band
Symbol
In-Band
Frequency
(MHz)
Blocker
Frequency 1
(MHz)
Blocker
Power 1
(dBm)
24
Blocker
Frequency 2
(MHz)
Blocker
Power 2
(dBm)
-15
Band 1
Band 5
Band 7
B1IMD2,OOB
B5IMD2,ULCA
B7IMD2,OOB
2140
1950
4090
881.5
836.5
20
1718
20
2652
2535
20
5187
20
Table 8: IMD3 Testcases
Band
Symbol
In-Band
Frequency
(MHz)
2140
Blocker
Frequency 1
(MHz)
1950
Blocker
Power 1
(dBm)
20
Blocker
Frequency 2
(MHz)
1760
Blocker
Power 2
(dBm)
20
Band 1
Band 7
Band 8
B1IMD3,ULCA
B7IMD3,ULCA
B8IMD3,ULCA
2655
2535
20
2415
20
942
897
20
852
20
6
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
RF Characteristics
Table 9: Switchting Time at TA = 25 ◦C, PRF = 0 dBm, Supply Voltage VDD= 1.65 V...3.4 V, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Switching Time1)
Switching Time
tST
–
1.5
2.5
µs
Time between RF states in ac-
tive mode VCtrl,H Min. or VCtrl,L
Max. level to 90% RF-signal
Time between 10% to 90% RF
Signal
RF Rise Time
tRT
–
–
0.7
5
1.5
7.5
µs
µs
Power Up Settling Time
tPUP
Time from VDD Min. power level
to 90% RF-signal
1)On application board without any matching components.
VDD Min.
VDD
tPUP
VCtrl_H Min.
VCtrl
VCtrl_L Max.
tST
tST
90%
90%
RF Path A
tRT
90%
10%
RF Path B
Figure 1: CTRL to RF Time
7
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Application Information
5 Application Information
Pin Configuration and Function
Figure 2: BGS12P2L6 Pin Configuration (top view)
Table 10: Pin Definition and Function
Pin No.
1
Name
RF2
Function
RF port 2
2
3
4
5
6
GND
RF1
Ground
RF port 1
VDD
RFin
CTRL
Supply voltage
RF port In
Control pin
Table 11: Truth Table Switch Control
Switched Paths
CTRL
RFIN - RF1
0
1
RFIN - RF2
8
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Package Information
6 Package Information
Figure 3: TSLP-6-4 Package Outline (Top, Side and Bottom Views)
NSMD
0.4
0.4
0.25
0.25
(stencil thickness 100 µm)
Stencil apertures
Copper
Solder mask
Figure 4: Footprint Recommendation
Table 12: Mechanical Data
Parameter
X-Dimension
Y-Dimension
Size
Symbol
X
Value
0.7 ±0.05
1.1 ±0.05
Unit
mm
mm
mm2
mm
Y
Size
H
0.77
Height
0.31 +0.01/−0.02
9
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Package Information
Figure 5: Marking Specification (Top View): Monthly Date code specified in Table 13
Table 13: Monthly Date Code Marking
Month
2015
2016
2017
A
B
C
D
E
2018
P
Q
R
S
T
U
V
X
Y
Z
2019
2020
2021
A
B
C
D
E
2022
P
Q
R
S
T
U
V
X
Y
Z
2023
2024
2025
A
B
C
D
E
F
G
H
J
2026
P
Q
R
S
T
U
V
X
Y
Z
1
2
3
4
5
6
7
8
9
a
b
c
d
e
f
g
h
j
p
q
r
s
t
u
v
x
y
z
2
3
a
b
c
d
e
f
g
h
j
p
q
r
s
t
u
v
x
y
z
2
3
a
b
c
d
e
f
g
h
j
p
q
r
s
t
u
v
x
y
z
2
3
F
F
G
H
J
K
L
G
H
J
K
L
10
11
12
k
l
n
k
l
n
k
l
n
K
L
N
4
5
4
5
4
5
N
N
0.5
2
Pin 1
marking
0.85
Figure 6: TSLP-6-4 Carrier Tape Drawing (Top and Side Views)
10
Revision 2.0
2019-07-04
BGS12P2L6
SPDT general purpose switch for high power applications
Revision History
Target, Revision v1.1, 2019-06-11
Page or Item
Revision 2.0, 2019-07-04
5-7 RF Characteristics Table 6
Subjects (major changes since previous revision)
11
Revision 2.0
2019-07-04
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Theinformationgiveninthisdocumentshallinnoevent For further information on technology, delivery terms
Edition 2019-07-04
Published by
Infineon Technologies AG
81726 Munich, Germany
be regarded as a guarantee of conditions or characteris- and conditions and prices, please contact the nearest
tics ("Beschaꢀenheitsgarantie"). With respect to any ex- Infineon Technologies Oꢀice (www.infineon.com).
amples, hints or any typical values stated herein and/or
any information regarding the application of the prod-
WARNINGS
uct, Infineon Technologies hereby disclaims any and all
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon Tech-
nologies oꢀice.
warranties and liabilities of any kind, including without
limitationwarrantiesofnon-infringementofintellectual
property rights of any third party. In addition, any infor-
mation given in this document is subject to customer’s
compliance with its obligations stated in this document
and any applicable legal requirements, norms and stan-
dards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s ap-
plications. The data contained in this document is ex-
clusively intended for technically trained staꢀ. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product infor-
mation given in this document with respect to such ap-
plication.
c
ꢀ 2019 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by autho-
rized representatives of Infineon Technologies, Infineon
Technologies products may not be used in any applica-
tionswhereafailureoftheproductoranyconsequences
of the use thereof can reasonably be expected to result
in personal injury.
相关型号：
BGS12PN10
BGS12PN10 是一款单刀双掷（SPDT）高线性度，高功率 RF 开关，针对高达 6.0 Ghz 的移动电话应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的兼容 CMOS 或 TTL 的控制输入信号驱动。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。
INFINEON
BGS12SN6
BGS12SN6 RF MOS 开关专为 WLAN 和蓝牙应用而设计。2个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。射频开关插入损耗极低，在 1 GHz 时损耗为 0.25 dB，2.5 GHz 时仅为 0.29 dB。
INFINEON
BGS13S4N9
BGS13S4N9 RF MOS 开关专为电话和移动应用而设计。3个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。它具有出色的1kV ESD稳健性。
INFINEON
BGS13SN8
BGS13SN8 是一款高功率开关，可通过3个TRx路径进行计数，最高可处理 30dBm。得益于高开关速度，它非常适合 WLAN 和蓝牙应用。它涵盖了高达6.0 GHz的宽频率范围。
INFINEON
BGS14PN10
BGS14PN10 是一款单刀双掷（SP4T）高线性度，高功率 RF 开关，针对高达 6.0 Ghz 的移动电话应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由两个简单的兼容 CMOS 或 TTL 的控制输入信号驱动。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。
INFINEON
©2020 ICPDF网 联系我们和版权申明