BGS13S4N9 [INFINEON]
BGS13S4N9 RF MOS 开关专为电话和移动应用而设计。3个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。它具有出色的1kV ESD稳健性。;
| 型号： | BGS13S4N9 |
| 厂家： | 
Infineon |
| 描述： | BGS13S4N9 RF MOS 开关专为电话和移动应用而设计。3个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。它具有出色的1kV ESD稳健性。 电话 开关 |
| 文件： | 总14页 (文件大小：1213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS13S4N9
Wideband RF SP3T Switch
Data Sheet
Revision 1.0 - 2016-04-12
Final
Power Management & Multimarket
Edition 2016-04-12
Published by Infineon Technologies AG
81726 Munich, Germany
c
ꢀ2016 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used
in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the
safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
BGS13S4N9
Confidential
Revision History
Document No.: BGS13S4N9_Final_v1.0.pdf
Revision History: Final Rev. v1.0
Previous Version: Target, Revision v1.0 - 2015-10-21
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
µHVICTM , µIPMTM , µPFCTM , AU-ConvertIRTM , AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM , CoolDPTM , CoolGaNTM
,
,
,
,
,
,
COOLiRTM , CoolMOSTM , CoolSETTM , CoolSiCTM , DAVETM , DI-POLTM , DirectFETTM , DrBladeTM , EasyPIMTM , EconoBRIDGETM
EconoDUALTM
HybridPACKTM
,
,
EconoPACKTM
iMOTIONTM
,
EconoPIMTM
,
EiceDRIVERTM
IsoPACKTM
,
eupecTM
,
,
FCOSTM
,
GaNpowIRTM
MIPAQTM
,
,
HEXFETTM
,
HITFETTM
my-dTM
,
IRAMTM ISOFACETM
,
,
LEDrivIRTM
,
LITIXTM
,
ModSTACKTM
,
NovalithICTM , OPTIGATM , OptiMOSTM , ORIGATM , PowIRaudioTM , PowIRStageTM , PrimePACKTM , PrimeSTACKTM , PROFETTM
PRO-SILTM , RASICTM , REAL3TM , SmartLEWISTM , SOLID FLASHTM , SPOCTM , StrongIRFETTM , SupIRBuckTM , TEMPFETTM
TRENCHSTOPTM , TriCoreTM , UHVICTM , XHPTM , XMCTM
.
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Trademarks updated November 2015
Data Sheet
3
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
Contents
Contents
1
2
3
4
5
6
7
Features
5
5
Product Description
Maximum Ratings
6
Operation Ranges
7
RF Characteristics
8
GPIO Specification
10
10
Pin Definition and Package Outline
List of Figures
1
BGS13S4N9 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
2
3
4
5
6
Pin out (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outline (bottom and side view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Land pattern and stencil mask . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Tape and Reel (Reel φ 180 mm: 15.000 Pieces/Reel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
List of Tables
1
2
3
4
5
6
7
8
9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
6
7
7
7
8
9
Maximum Ratings, Table I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings, Table II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Input Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GPIO Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Year Date Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Week Date Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Data Sheet
4
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
BGS13S4N9 Wideband RF SP3T Switch
1 Features
• 3 high-linearity TRx paths with power handling capability of up to
30 dBm
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• Suitable for Edge / CDMA2000 / LTE / WCDMA applications
• 0.1 to 3.0 GHz coverage
• No decoupling capacitors required if no DC applied on RF lines
• On-chip control logic including ESD protection
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.1 mm x 1.1 mm x 0.375 mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
2 Product Description
The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports
can be used as termination of the diversity antenna handling up to 30 dBm.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low
harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven
by control inputs from 1.35 V to VDD . The BGS13S4N9 RF Switch is manufactured in Infineon’s patented MOS
technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the
inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a maximum height of
0.375 mm.
No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type
Package
Marking
BGS13S4N9
TSNP-9-3
W
Data Sheet
5
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
ꢂꢃꢐꢑ
ꢖꢒꢍꢁꢔꢍꢗꢓꢘ
ꢂꢃꢄ
ꢂꢃꢁ
ꢂꢃꢔ
ꢍꢎꢔꢕ
ꢅꢆꢇꢈꢉꢆꢊ ꢋ ꢌꢍꢅ
ꢎꢊꢈꢏꢆꢇꢏꢐꢈꢑ
Figure 1: BGS13S4N9 Block Diagram
3 Maximum Ratings
Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.1
-0.5
-55
–
Typ.
–
Max.
3.0
1)
Frequency Range
f
GHz
V
◦C
◦C
Supply voltage
VDD
TSTG
Tj
–
3.6
–
–
–
Storage temperature range
Junction temperature
–
150
–
125
RF input power at all Rx ports PRF_Rx
–
–
32
dBm CW
ESD capability, CDM2)
ESD capability, HBM3)
VESD_CDM -1000
VESD_HBM -1000
-1000
–
+1000
+1000
+1000
+8000
V
V
V
V
All pins
–
All pins excluding RFin
RFin vs. other pins
–
ESD capability, system level4) VESD_ANT
-8000
–
ANT versus system GND,
with 16 nH shunt inductor
Type LQW15AN16NG80
1)There is also a DC connection between switched paths. The DC voltage at RF ports V
has to be 0V.
RFDC
2)Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3)Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 kΩ, C=100 pF).
4)IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge.
Data Sheet
6
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Maximum DC-voltage on RF- VRFDC
Ports and RF-Ground
0
0
V
No DC voltages allowed on
RF-Ports
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.8
–
Typ.
–
Max.
3.3
Supply voltage
Supply current1)
VDD
V
–
–
–
–
–
IDD
80
–
150
VDD
0.43
2
µA
V
GPIO control voltage high
GPIO control voltage low
VCtrl_H
VCtrl_L
1.35
-0.3
–
–
V
GPIO control input capaci- CCtrl
tance
–
pF
Ambient temperature
TA
-40
25
85
◦C
–
1)T = −40 ◦C - 85 ◦C, V = 1.8 - 3.3 V
A
DD
Table 5: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Rx ports (50 Ω)
PRF_Rx
–
30
dBm
–
Data Sheet
7
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
5 RF Characteristics
Table 6: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V–3.3 V, Z0 = 50 Ohm,
unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss
0.10
0.20
0.25
0.40
0.20
0.30
0.40
0.55
0.25
0.40
0.60
0.65
dB
dB
dB
dB
824–915 MHz
1710–1910 MHz
2170–2500 MHz
2700MHz
All Rx Ports
IL
Insertion Loss1)
All Rx Ports
0.15
0.25
0.35
0.50
0.20
0.30
0.40
0.55
0.25
0.35
0.50
0.65
dB
dB
dB
dB
824–915 MHz
1710–1910 MHz
2170–2500 MHz
2700MHz
IL
Return Loss
All Rx Ports
28
18
15
13
31
20
18
14
33
24
20
16
dB
dB
dB
dB
824–915 MHz
1710–1910 MHz
2170–2500 MHz
2700MHz
RL
Isolation1)
31
23
17
16
32
21
17
15
33
27
22
21
34
25
23
19
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
dB
824–915 MHz
1710–1910 MHz
2170–2500 MHz
2700MHz
RFin to RF1/RF2/RF32)
ISOIn-RFx
824–915 MHz
1710–1910 MHz
2170–2500 MHz
2700MHz
RF1 to RF2 / RF2 to RF13)
RF1 to RF3 / RF3 to RF14)
RF2 to RF3 / RF3 to RF25)
ISOport-port
1)T = 25 ◦C, V
= 3V
DD
A
2)Any RF Port ON
3)RF1 ON
4)RF3 ON
5)RF2 ON
Data Sheet
8
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
Table 7: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V–3.3 V, Z0 = 50 Ohm,
unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
P0.1 dB Compression Point, Extrapolated
All Rx Ports P0.1dB
Harmonic Generation up to 12.75 GHz
34
–
–
dBm 698–960 MHz
H2
PHarm
–
–
-80
-80
-70
-70
dBc
dBc
27 dBm, 50 Ω, CW mode
H3
PHarm
27 dBm, 50 Ω, CW mode
Intermodulation Distortion in Rx Band1) (TA = 25 ◦C)
Tx = 10 dBm,
IMD2
IMD2
IMD3
–
–
-110
-115
-100
-100
dBm
dBm
Interferer = −15 dBm, 50 Ω
IMD3
Switching Time
10 % to 90 % RF ON;
90 % to 10 % RF OFF
RF Rise Time
ton/off
–
–
0.085
0.55
–
–
µs
µs
50 % of Ctrl Signal to
90 % of RF Signal
Ctrl to RF Time
tCtrl-RF
1)With external shunt inductor
Data Sheet
9
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
6 GPIO Specification
Table 8: Modes of Operation Truth Table
Control Inputs
State
Mode
V1
0
V2
0
RF1
off
RF2
off
RF3
off
1
2
3
4
Isolation
RFin - RF1
RFin - RF2
RFin - RF3
1
0
on
off
off
0
1
off
on
off
1
1
off
off
on
7 Pin Definition and Package Outline
Table 9: Pin Configuration
No Name
Pin Type
I
I/O
I/O
I/O
Buffer Type Function
Control Pin 1
1
2
3
4
5
6
7
8
9
V1
RF3
RF1
RFin
RF2
DGND
VDD
V2
RF-Port3
RF-Port1
RF-Input
RF-Port2
Digital Ground
Power Supply
Control Pin 2
Ground
I/O
GND
PWR
I
GND
GND
ꢄ
ꢀ
ꢂ
ꢁꢃ
ꢁꢅꢅ
ꢁꢀ
ꢌ
ꢉ
ꢃ
ꢊꢋꢅ
ꢆꢇꢈ
ꢅꢊꢋꢅ
ꢈ
ꢐ
ꢍ
ꢆꢇꢀ
ꢆꢇꢎꢏ
ꢆꢇꢃ
Figure 2: Pin out (top view)
Data Sheet
10
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
Table 10: Mechanical Data
Parameter
Symbol
Value
Unit
mm
mm
mm2
mm
mm
X-Dimension
Y-Dimension
Size
X
1.1 ± 0.05
1.1 ± 0.05
1.21
Y
Size
H
Height
0.375 ± 0.025
0.4
Pad-Pitch
Figure 3: Package Outline (bottom and side view)
ꢀꢁꢄ
ꢀꢁꢄ
ꢀꢁꢂꢃ
ꢀꢁꢂꢃ
ꢟꢖꢏꢓꢛꢑꢕꢔkꢙꢛꢔꢜꢐꢗkꢝꢕꢙꢞkꢜꢕꢝ
ꢆꢛꢔꢜꢐꢗkꢝꢕꢙꢞ
ꢆꢏꢐꢑꢒꢓꢔkꢕꢖꢐꢗꢏꢘꢗꢐꢙ
ꢚꢛꢖꢖꢐꢗ
ꢅꢆꢇꢈꢉꢊꢉꢋꢉꢌꢈkꢍꢀꢎ
Figure 4: Land pattern and stencil mask
Data Sheet
11
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
Figure 5: Marking Pattern
Table 11: Year date code marking - digit "Y"
Year
"Y"
0
Year
"Y"
0
Year
"Y"
0
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
1
1
1
2
2
2
3
3
3
4
4
4
5
5
5
6
6
6
7
7
7
8
8
8
9
9
9
Table 12: Week date code marking - digit "W"
Week "W" Week "W" Week "W"
Week "W"
Week "W"
1
A
B
C
D
E
F
G
H
J
12
13
14
15
16
17
18
19
20
21
22
N
P
Q
R
S
T
23
24
25
26
27
28
29
30
31
32
33
4
5
6
7
a
b
c
d
e
f
34
35
36
37
38
39
40
41
42
43
44
h
j
45
46
47
48
49
50
51
52
v
x
y
z
8
9
2
3
2
3
k
l
4
5
n
p
q
r
6
7
U
V
W
Y
Z
8
9
s
t
10
11
K
L
g
u
Data Sheet
12
Revision 1.0 - 2016-04-12
BGS13S4N9
Confidential
ꢁꢂꢃ
ꢄꢅꢆꢇꢈ
ꢉꢊꢋꢌꢅꢆꢍ
ꢀ
ꢈꢂꢀꢃ
ꢎꢏꢐꢄꢑꢒꢑꢓꢑꢎꢄꢇꢔꢁꢈ
Figure 6: Tape and Reel (Reel φ 180 mm: 15.000 Pieces/Reel)
Data Sheet
13
Revision 1.0 - 2016-04-12
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BGS13SN8
BGS13SN8 是一款高功率开关，可通过3个TRx路径进行计数，最高可处理 30dBm。得益于高开关速度，它非常适合 WLAN 和蓝牙应用。它涵盖了高达6.0 GHz的宽频率范围。
INFINEON
BGS14PN10
BGS14PN10 是一款单刀双掷（SP4T）高线性度，高功率 RF 开关，针对高达 6.0 Ghz 的移动电话应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由两个简单的兼容 CMOS 或 TTL 的控制输入信号驱动。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。
INFINEON
BGS16GA14
BGS16GA14 是一款单极六掷（SP6T）分集开关模块，针对高达 3.8 GHz 的无线应用进行了优化。作为引脚和功能兼容的 SP3T-SP8T 产品系列的一部分，其设计为满足芯片组参考设计的要求。该模块采用微型 ATSLP 封装，包括一个具有集成 GPIO 接口的高功率 CMOS SP8T 开关。这个射频开关是基于 LTE 和 WCDMA 的多模手机理想解决方案。
INFINEON
BGS18GA14
BGS18GA14 是一款单极八掷（SP8T）分集模块，针对高达 3.8 GHz 的无线应用进行了优化。作为引脚和功能兼容的 SP3T-SP8T 产品系列的一部分，其设计为满足芯片组参考设计的要求。该模块采用微型 ATSLP 封装，包括一个具有集成 GPIO 接口的高功率 CMOS SP8T 开关。这个射频开关是基于 LTE-和 WCDMA 的多模手机理想解决方案。
INFINEON
©2020 ICPDF网 联系我们和版权申明