BGSA12UGL8 [INFINEON]
BGSA12UGL8 是一款多功能单刀双掷(SPDT)射频天线孔径开关，针对低 Coff 以及高达 6.0 Ghz 的低 Ron 使能应用进行了优化。该单电源芯片集成了 2 位控制逻辑，具有低电流待机模式。与 GaAs 技术不同，0.1 dB 压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能，只有在外部施加直流电压时，才需要射频端口上的外部直流阻塞电容器。由于其极高的 RF 电压耐用性，它适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。;
| 型号： | BGSA12UGL8 |
| 厂家： | 
Infineon |
| 描述： | BGSA12UGL8 是一款多功能单刀双掷(SPDT)射频天线孔径开关，针对低 Coff 以及高达 6.0 Ghz 的低 Ron 使能应用进行了优化。该单电源芯片集成了 2 位控制逻辑，具有低电流待机模式。与 GaAs 技术不同，0.1 dB 压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能，只有在外部施加直流电压时，才需要射频端口上的外部直流阻塞电容器。由于其极高的 RF 电压耐用性，它适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。 开关 射频 光电二极管 电容器 电感器 射频天线 |
| 文件： | 总16页 (文件大小：663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGSA12UGL8
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Features
• SPDT designed for high-linearity antenna aperture switching and
RF tuning applications
• Ultra low RON resistance of 0.59 Ω at each port in ON state
• Low COFF capacitance of 270 fF at each port in OFF state
• > 40 V RF voltage OFF state handling
• Low harmonic generation
• Supply voltage range: 1.65 to 3.6 V
• Small form factor 1.1 mm x 1.1 mm
• RoHS and WEEE compliant package
1.1x1.1mm2
Application
• Impedance Tuning
• Antenna Tuning
• Inductance Tuning
• Tunable Filters
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
ꢃꢄꢄ
ꢀꢁꢂ
ꢃꢊꢋꢌꢍꢎꢏ
ꢀꢏꢎꢐꢋꢍꢌꢊꢑ
ꢙꢚꢄ
ꢛꢚꢜ
ꢂꢅꢀꢆꢇꢈ
ꢂꢅꢀꢆꢇꢉ
ꢄꢑꢗꢘꢏꢑ
ꢂꢒꢍꢑꢎꢏꢓꢐꢔꢓ
Data Sheet
www.infineon.com
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Table of Contents
Table of Contents
Table of Contents
1
2
1
Features
2
3
4
5
6
7
8
Maximum Ratings
3
DC Characteristics
RF Small Signal Characteristics
RF Large Signal Parameter
Logic Table
6
7
9
11
11
12
Application Information
Package Information
Data Sheet
1
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Features
1 Features
•
SPDT designed for high-linearity antenna aperture switching and RF
tuning applications
• Ultra low RON resistance of 0.59 Ω at each port in ON state
• Low COFF capacitance of 270 fF at each port in OFF state
• > 40 V RF voltage OFF state handling
• Low harmonic generation
• GPIO control interface - including 4 control states
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
• Small form factor 1.1 mm x 1.1 mm
• Suitable for EDGE/ CDMA/WCDMA/ C2K/ LTE Applications
• RoHS and WEEE compliant package
Description
The BGSA12UGL8 is a versatile Single Pole Double Throw (SPDT) RF antenna aperture switch optimized for low COFF as well as
low RON enabling applications up to 6.0 GHz. This single supply chip integrates with a 2 bits control logic featuring also a low
current standby mode. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level,
resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC
voltage is applied externally. Due to its very high RF voltage ruggedness, it is suited for switching any reactive devices such as
inductors and capacitors in RF matching circuits without significant losses in quality factors.
Product Name
Marking
Package
BGSA12UGL8
A
TSLP-8-1
Data Sheet
2
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.4
Typ.
–
–
Max.
–
6
1)
Frequency Range
Supply voltage 2)
f
GHz
V
VDD
-0.5
only for infrequent and short
duration time periods
Storage temperature range
RF input power
TSTG
-55
–
–
–
150
41
◦C
–
PRF_max
dBm
Pulsed RF input duty cycle of
25 % and 4620 µs in ON-state,
measured per 3GPP TS 45.005,
test condition schematic in
Fig. 2 and Fig. 3.
RF voltage
VRF_max
–
–
50
V
Short term peaks (1 µs in 0.1 %
duty cycle), exceeding typical
linearity, RON and COFF param-
eters, in Isolation mode, test
condition schematic in Fig. 1
ESD capability, CDM 3)
ESD capability, HBM 4)
ESD capability, system level (RF port) 5)
VESD,CDM -1
VESD,HBM -1
–
–
–
+1
+1
+8
kV
kV
kV
VESD,ANT
-8
RFx vs system GND, with 27 nH
shunt inductor
Junction temperature
TJ
–
–
–
125
0
◦C
V
–
Maximum DC-voltage on RF-Ports and RF- VRFDC
0
No DC voltages allowed on RF-
Ground
Ports
–
Control Voltage Levels
VCTRL
-0.7
–
3.3
V
1) Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports V
RFDC
has to be 0 V.
2) Note: Consider potential ripple voltages on top of V . Including RF ripple, V must not exceed the maximum ratings: V = V + V
.
RIPPLE
DD
DD
DD
DC
3) Field-Induced Charged-Device Model JS-002-2014. Simulates charging/discharging events that occur in production equipment and processes. Potential for
CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).
5) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
3
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Maximum Ratings
50 Ohm
Spectrum
Analyser
(Hx Monitor)
SIGNAL
SOURCE
50 Ohm Transmission Line
Power
Meter
Vcontrol Vdd
Vrf
RFC
Voltage
Regulator
ESD
ISO
CTRL 1
CTRL 2
Driver
Chargepump
RF1 RF2
GND
Figure 1: RF operating voltage measurement configuration - OFF mode
50 Ohm
SIGNAL
SOURCE
50 Ohm Transmission Line
Vcontrol Vdd
RFC
Voltage
ESD
Regulator
ISO
CTRL 1
Driver
CTRL 2
Chargepump
Spectrum
Analyser
(Hx Monitor)
RF1 RF2
GND
Power
Meter
Figure 2: RF operating and Harmonics generation voltage measurement configuration - RF1 ON mode
Data Sheet
4
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Maximum Ratings
50 Ohm
SIGNAL
SOURCE
50 Ohm Transmission Line
Vcontrol Vdd
RFC
Voltage
Regulator
ESD
ISO
CTRL 1
CTRL 2
Driver
Chargepump
Spectrum
Analyser
(Hx Monitor)
RF1 RF2
GND
Power
Meter
Figure 3: RF operating and Harmonics generation voltage measurement configuration - RF2 ON mode
Data Sheet
5
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
DC Characteristics
3 DC Characteristics
Table 2: Operation Ranges
Parameter
Symbol
Values
Typ.
2.8
Unit
Note / Test Condition
Min.
1.65
45
Max.
3.6
3501
Supply voltage
Supply current
VDD
IDD
V
–
60
µA
1 TA = 85 ◦C,
PIN = 40 dBm, ON mode
TA = −40 ◦C...+85 ◦C,
VDD = 1.65 - 3.6 V
–
Supply current in low power mode IDD,LP
–
–
1
µA
Control voltage low
Control voltage high
Control current low
Control current high
VCTRL,low
0
–
0.45
2.85
1
V
VCTRL,high
ICTRL,low
ICTRL,high
1.2
-1
1.8
0
V
VCTRL,high ꢀ VDD
–
µA
µA
-1
0
4
VCTRL,high ꢀ VDD
1 MΩ Pull-Down resistor at
Control Pins
Ambient temperature
RF switching time
TA
-40
4.7
25
5
85
◦C
–
tST
5.5
µs
PIN = 0 dBm, Z0 = 50 Ω,
TA = −40 ◦C... +85 ◦C
VDD = 1.65 - 3.6 V
Ref. Fig. 4 and Fig. 5
Startup time
tPUP
5
6
7
µs
VDD
CTRL
t Pup
t ST
90%
RF Signal
Figure 4: Power Up settling time and switching time
VDD
CTRL
RF Signal
Ac�ve
Close-down
Start-up
Figure 5: Timing of Control and RF signals for valid operation
Data Sheet
6
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
RF Small Signal Characteristics
4 RF Small Signal Characteristics
Parameter
Symbol
Values
Typ.
Unit
STATE / Notes
Min.
0.4
0.5
Max.
6.0
0.7
Frequency range
RF1 or RF2 to RFc
ON DC resistance
RF1 or RF2 to RFc
OFF DC resistance
RF1 or RF2 to RFc
OFF capacitance
f
GHz
Ω
RON
0.59
42.5
270
VDD = 1.65 - 3.6 V,
TA = 25 ◦C,
Four-terminal sensing method
ROFF
COFF
38
45
kΩ
235
305
fF
VDD = 1.65 - 3.6 V, TA = 25 ◦C,
extracted from Isolation (S21) mea-
surement Z0 = 50 Ω
Table 3: RF electrical parameters
Insertion Loss: RF1 to RFc or RF2 to RFc (SPDT mode) (1,2,3)
Parameter
Symbol
Values
Unit
STATE / Notes
Min.
0.07
0.20
0.24
0.33
0.40
0.69
0.69
1.3
Typ.
0.14
0.26
0.31
0.39
0.48
0.88
1.2
Max.
0.25
0.39
0.45
0.55
0.65
1.25
1.75
698 - 960 MHz
961 - 1710 MHz
1711 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
dB
dB
dB
dB
dB
dB
dB
dB
ILSPDT
VDD = 1.65 - 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C...+85 ◦C
1.9
2.3
Isolation: RF1 to RFc or RF2 to RFc (SPDT mode) (1,2,3)
698 - 960 MHz
961 - 1710 MHz
1711 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
23
15.5
14.5
14
12
9.5
9
24
17
16
15
13.5
11
10.5
8.8
25
18
17
16
15
12
11.5
10.5
dB
dB
dB
dB
dB
dB
dB
dB
ISOSPDT
VDD = 1.65 - 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C...+85 ◦C
8
1) Valid for all RF power levels, no compression behavior
2) SOLT-calibrated, P = 0 dBm
IN
3)On application board without any matching components
Data Sheet
7
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
RF Small Signal Characteristics
Table 3: RF electrical parameters (continued)
Isolation: RFc to RFx (Isolation mode, no switch selection)(1,2,3)
Parameter
Symbol
Values
Typ.
18
11.5
11
10
9
8
Unit
STATE / Notes
Min.
17
10.5
10
9
8
7
6.5
5.5
Max.
19
12.5
12
11
10
9
8.5
8.5
698 - 960 MHz
961 - 1710 MHz
1711 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
dB
dB
dB
dB
dB
dB
dB
dB
ISOISO
VPDD = 1.65 - 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C...+85 ◦C
7.5
7
Isolation: RF1 to RF2 or RF2 to RF1 (SPDT mode)(1,2,3)
698 - 960 MHz
961 - 1710 MHz
1711 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
19
14
13
12
11
8
21
16
15
14
13
10
9
23
18
17
16
15
12
11
dB
dB
dB
dB
dB
dB
dB
dB
ISOSPDT
VDD = 1.65 - 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C...+85 ◦C
7
6
8
10
Isolation: RF1 to RF2 or RF2 to RF1 (Isolation mode, no switch selection)(1,2,3)
698 - 960 MHz
961 - 1710 MHz
1711 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
34
25
23
21
18
14
12
10
36
27
25
23
20
16
14
12
38
29
27
25
22
18
16
14
dB
dB
dB
dB
dB
dB
dB
dB
ISOISO
VDD = 1.65 - 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C...+85 ◦C
1) Valid for all RF power levels, no compression behavior
2) SOLT-calibrated, P = 0 dBm
IN
3)On application board without any matching components
Data Sheet
8
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
RF Large Signal Parameter
5 RF Large Signal Parameter
Table 4: RF large signal specifications at TA = 25 ◦C
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
–
Max.
40
Max. RF Operating Voltage
VRF_opr
V
In Isolation mode, test condition
schematic in Fig. 1
for H2/H3 < -40 dBm @ 50 Ω
RF1 or RF2 in ON mode, test
condition schematic in Fig. 2 or
Fig. 3
Max. RF Operating Power
VRF_pwr
–
–
40
dBm
for H2/H3 < -40 dBm @ 50 Ω
Harmonic Generation up to 12.75 GHz
All RF Ports - Second Order Har- PH2
monics
95
105
120
90
-
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
25 dBm, 50 Ω, f0 = 824 MHz, test
condition in Fig. 2 an Fig. 3
25 dBm, 50 Ω, f0 = 824 MHz, test
condition in Fig. 2 an Fig. 3
36 dBm, 50 Ω, f0 = 824 MHz, test
condition in Fig. 2 an Fig. 3
36 dBm, 50 Ω, f0 = 824 MHz, test
condition in Fig. 2 an Fig. 3
36 dBm, 50 Ω, f0 = 1800 MHz, test
condition in Fig. 2 an Fig. 3
25 dBm, 50 Ω, f0 = 1800 MHz, test
condition in Fig. 2 an Fig. 3
25 dBm, 50 Ω, f0 = 1800 MHz, test
condition in Fig. 2 an Fig. 3
36 dBm, 50 Ω, f0 = 1800 MHz, test
condition in Fig. 2 an Fig. 3
25 dBm, 50 Ω
AllRFPorts-ThirdOrderHarmon- PH3
ics
110
80
90
90
95
–
–
–
–
–
–
–
–
All RF Ports - Second Order Har- PH2
monics
AllRFPorts-ThirdOrderHarmon- PH3
ics
100
100
105
120
90
AllRFPorts-ThirdOrderHarmon- PH3
ics
All RF Ports - Second Order Har- PH2
monics
AllRFPorts-ThirdOrderHarmon- PH3
ics
110
80
105
All RF Ports - Second Order Har- PH2
monics
Higher order harmonic products PHx
Intermodulation Distortion IMD2
–
IIP2, low
IIP2, high
IIP2L
IIP2H
110
117
114
120
–
–
dBm
dBm
IIP2 conditions table 5
Intermodulation Distortion IMD3
IIP3
IIP3
71
71
75
75
–
–
dBm
dBm
IIP3 conditions table 6
SV LTE Intermodulation
IIP3,SVLTE
IIP3SV
SV-LTE conditions table 7
Data Sheet
9
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
RF Large Signal Parameter
Table 5: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
190
[dBm]
-15
Band 1 Low
Band 1 High
Band 5 Low
Band 5 High
2140
1950
20
4090
45
-15
881.5
881.5
836.5
836.5
20
-15
20
1718
-15
Table 6: IIP3 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
1760
[dBm]
-15
Band 1
Band 5
881.5
836.5
20
791.5
-15
Table 7: SV-LTE conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
872
[MHz]
827
[dBm]
23
[MHz]
872
[dBm]
14
Band 5
Band 13
Band 20
747
786
23
747
14
878
833
23
2544
14
Data Sheet
10
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Application Information
6 Logic Table
Table 8: Logic Table
CTRL 1
CTRL 2
Mode
0
0
1
0
1
Low power mode
RF2 connected to RFC
0
1
RF1 connected to RFC
1
Isolation mode (no switch selection)
7 Application Information
Pin Configuration and Function
ꢀꢁꢊ
ꢂ
ꢃ
ꢎ
ꢅ
ꢄ
ꢏ
ꢐ
ꢀꢁꢂ
ꢆꢇꢈ
ꢉꢈꢈ
ꢀꢁꢃ
ꢆꢇꢈ
ꢑ
ꢊꢋꢀꢌꢍꢃ
Figure 6: BGSA12UGL8 Pin Configuration (top view)
Table 9: Pin Definition and Function
Pin No.
1
Name
RF1
Function
RF port
2
3
4
5
6
7
8
GND
VDD
CTL1
CTL2
GND
RF2
Ground
DC Supply Voltage
Control Pin 1
Control Pin 2
Ground
RFport
RFC
Common RF
Data Sheet
11
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Package Information
8 Package Information
0.39+-00..0031
1.1±0.05
0.2±0.035
0.1 A
A
4
5
6
7
3
2
1
8
0.4
0.02 MAX.
INDEX
(LASERED)
STAND OFF
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 7: TSLP-8-1 Package Outline (top, side and bottom views)
TYPE CODE
DATE CODE
PIN1 MARKING
(YW)
(LASERED)
Figure 8: Marking Specification (top view): Date code digits Y and W defined in Table 10/11
Data Sheet
12
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Package Information
Table 10: Year date code marking - digit "Y"
Year
"Y"
0
1
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
"Y"
0
1
Year
"Y"
0
1
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2
2
2
3
3
3
4
4
4
5
5
5
6
7
6
7
6
7
8
9
8
9
8
9
Table 11: Week date code marking - digit "W"
Week
"W"
Week
"W"
N
P
Week
"W"
4
Week
34
35
"W"
h
j
Week
45
"W"
v
1
A
12
23
2
B
13
24
5
46
47
x
3
C
14
Q
R
25
6
36
37
k
l
y
4
5
D
E
15
26
27
7
48
49
50
51
z
16
S
a
38
39
40
41
n
p
q
r
8
6
7
F
17
T
28
29
30
31
b
c
9
G
H
J
18
U
V
2
8
9
10
11
19
d
e
52
3
20
21
W
Y
42
43
s
53
M
K
32
f
t
L
22
Z
33
g
44
u
Data Sheet
13
Revision 2.3
2019-08-13
BGSA12UGL8
Low Resistance SPDT Antenna Aperture Switch
Package Information
∅0.25
0.25
0.4
0.4
copper
solder mask
stencil apertures
ALL DIMENSIONS ARE IN UNITS MM
Figure 9: Footprint Recommendation
2
PIN 1
4
0.5
INDEX MARKING
1.25
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 10: TSLP-8-1 Carrier Tape
Data Sheet
14
Revision 2.3
2019-08-13
Revision History
Creation of document Revision 2.3, 2019-08-13
Page or Item
6
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Updated Vddmin to 1.65V
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