BTT60101EKAXUMA1 [INFINEON]
Buffer/Inverter Based Peripheral Driver, 9A, PDSO14, SOP-14;型号: | BTT60101EKAXUMA1 |
厂家: | Infineon |
描述: | Buffer/Inverter Based Peripheral Driver, 9A, PDSO14, SOP-14 驱动 光电二极管 接口集成电路 |
文件: | 总48页 (文件大小:1465K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROFET™+ 24V
BTT6010-1EKA
Smart High-Side Power Switch
Single Channel, 10mΩ
Data Sheet
PROFET™+ 24V
Rev. 1.1, 2014-12-17
Automotive Power
BTT6010-1EKA
Table of Contents
Table of Contents
1
2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
3.2
3.3
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
7
7.1
7.2
7.3
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . 28
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
8
8.1
8.2
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Data Sheet
PROFET™+ 24V
2
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Table of Contents
8.3
8.4
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
9
Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
9.1
9.2
9.3
9.4
9.5
10
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
10.1
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
11
12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Data Sheet
PROFET™+ 24V
3
Rev. 1.1, 2014-12-17
Smart High-Side Power Switch
BTT6010-1EKA
1
Overview
Application
•
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for loads with high inrush current, such as lamps
Suitable for 24V truck and transportation system
Basic Features
PG-DSO-14-47 EP
•
•
•
•
•
•
•
•
•
One channel device
Very low stand-by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
AEC qualified
Description
The BTT6010-1EKA is a 10 mΩ single channel Smart High-Side Power Switch, embedded in a PG-DSO-14-47
EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially
designed to drive lamps up to 7 x P21W 24V or 2 x 75W 24V, as well as LEDs in the harsh automotive
environment.
Table 1
Product Summary
Parameter
Symbol
VS(OP)
VS(LD)
RDS(ON)
IL(NOM)
kILIS
Value
5 V ... 36 V
66 V
Operating voltage range
Maximum supply voltage
Maximum ON state resistance at TJ = 150 °C
Nominal load current
22 mΩ
9 A
Typical current sense ratio
3900
Minimum current limitation
IL5(SC)
IS(OFF)
90 A
Maximum standby current with load at TJ = 25 °C
1.4 µA
Type
Package
Marking
BTT6010-1EKA
BTT6010-1EKA
PG-DSO-14-47 EP
Data Sheet
PROFET™+ 24V
4
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Overview
Diagnostic Functions
•
•
•
•
•
•
Proportional load current sense
Open load in ON and OFF
Short circuit to battery and ground
Overtemperature
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
•
•
•
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnect with external components
Overtemperature protection with latch
Overvoltage protection with external components
Voltage dependent current limitation
Enhanced short circuit operation
Data Sheet
PROFET™+ 24V
5
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Block Diagram
2
Block Diagram
VS
voltage sensor
internal
power
supply
over
T
temperature
clamp for
inductive load
gate control
&
charge pump
driver
logic
over current
switch limit
IN
ESD
protection
DEN
load current sense and
OUT
open load detection
IS
forward voltage drop detection
Block diagram.emf
GND
Figure 1
Block Diagram for the BTT6010-1EKA
Data Sheet
PROFET™+ 24V
6
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
NC
NC
1
2
3
14
13
12
NC
NC
GND
OUT
IN
4
5
11
10
OUT
OUT
DEN
IS
6
7
9
8
NC
NC
NC
Pinout single SO14.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
Cooling Tab
VS
Voltage Supply; Battery voltage
1, 2, 7, 8, 9, 13, 14 NC
Not Connected; No internal connection to the chip
GrouND; Ground connection
3
GND
4
IN
INput channel; Input signal for channel activation
5
DEN
IS
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
Sense; Sense current of the selected channel
6
10, 11, 12
OUT
OUTput; Protected high side power output channel1)
1) All output pins must be connected together on the PCB. All pins of the output are internally connected together. PCB traces
have to be designed to withstand the maximum current which can flow.
Data Sheet
PROFET™+ 24V
7
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
I S
VS
VS
IIN
IN
VIN
VDS
IDEN
IOUT
DEN
OUT
VDEN
IIS
VOUT
IS
GND
VIS
IGND
voltage and current convention single.vsd
Figure 3
Voltage and Current Definition
Data Sheet
PROFET™+ 24V
8
Rev. 1.1, 2014-12-17
BTT6010-1EKA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
TJ = -40 °C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note /
Number
Test Condition
Min.
Max.
Supply Voltages
Supply voltage
VS
-0.3
0
–
–
48
28
V
V
–
P_4.1.1
P_4.1.2
Reverse polarity voltage
-VS(REV)
t < 2 min
TA = 25 °C
RL ≥ 4 Ω
Supply voltage for short
circuit protection
VBAT(SC)
0
–
36
V
2) RECU = 20 mΩ P_4.1.3
Cable= 16 mΩ/m
Cable= 1 μH/m,
R
L
l = 0 or 5 m
See Chapter 6
and Figure 29
Supply voltage for Load dump VS(LD)
protection
–
–
–
–
66
V
3) RI = 2 Ω
RL = 4 Ω
P_4.1.12
P_4.1.4
Short Circuit Capability
Permanent short circuit
IN pin toggles
nRSC1
100
k
2) Vsupply = 28V
cycles
Input Pins
Voltage at INPUT pin
VIN
-0.3
–
6
7
V
–
P_4.1.13
t < 2 min
Current through INPUT pin
Voltage at DEN pin
IIN
-2
–
–
2
mA
V
–
P_4.1.14
P_4.1.15
VDEN
-0.3
–
6
7
–
t < 2 min
Current through DEN pin
Sense Pin
IDEN
-2
–
2
mA
–
P_4.1.16
Voltage at IS pin
Current through IS pin
Power Stage
VIS
IIS
-0.3
-25
–
–
VS
V
–
–
P_4.1.19
P_4.1.20
50
mA
Load current
| IL |
–
–
–
–
IL(LIM)
A
–
P_4.1.21
P_4.1.22
Power dissipation (DC)
PTOT
1.6
W
TA = 85 °C
TJ < 150 °C
Maximum energy dissipation EAS
Single pulse
–
–
–
–
219
66
mJ
V
I
L(0) = 9 A
P_4.1.23
P_4.1.26
TJ(0) = 150 °C
VS = 28 V
Voltage at power transistor
VDS
–
Currents
Data Sheet
PROFET™+ 24V
9
Rev. 1.1, 2014-12-17
BTT6010-1EKA
General Product Characteristics
Table 2
TJ = -40 °C to +150°C; (unless otherwise specified)
Absolute Maximum Ratings (cont’d)1)
Parameter
Symbol
Values
Typ.
–
Unit Note /
Number
Test Condition
Min.
Max.
Current through ground pin
I GND
-20
-200
20
20
mA
–
P_4.1.27
t < 2 min
Temperatures
Junction temperature
Storage temperature
ESD Susceptibility
ESD susceptibility (all pins)
TJ
-40
-55
–
–
150
150
°C
°C
–
–
P_4.1.28
P_4.1.30
TSTG
VESD
-2
-4
–
–
2
4
kV
kV
4) HBM
4) HBM
P_4.1.31
P_4.1.32
ESD susceptibility OUT Pin VESD
vs. GND and VS connected
ESD susceptibility
VESD
VESD
-500
-750
–
–
500
750
V
V
5) CDM
5) CDM
P_4.1.33
P_4.1.34
ESD susceptibility pin
(corner pins)
1) Not subject to production test. Specified by design.
2) Threshold limit for short circuit failures : 100ppm. Please refer to the legal disclaimer for short circuit capability at the end
of this document.
3) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001
5) ESD susceptibility, Charge Device Model “CDM” ESDA STM5.3.1 or ANSI/ESD S.5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
PROFET™+ 24V
10
Rev. 1.1, 2014-12-17
BTT6010-1EKA
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range TJ = -40 °C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
28
Unit Note /
Test Condition
Number
Min.
Max.
36
Nominal operating voltage
VNOM
8
5
V
V
–
2)
P_4.2.1
P_4.2.2
Extended operating voltage VS(OP)
–
48
V = 4.5 V
IN
RL = 4 Ω
V
DS < 0.5 V
1)
Minimum functional supply
voltage
VS(OP)_MIN
3.8
4.3
3.5
5
V
V
V = 4.5 V
P_4.2.3
IN
RL = 4 Ω
From IOUT = 0 A
to
VDS < 0.5 V;
See Figure 15
1)
Undervoltage shutdown
VS(UV)
3
4.1
V = 4.5 V
P_4.2.4
IN
VDEN = 0 V
RL = 4 Ω
From VDS < 1 V;
to IOUT = 0 A
See Figure 15
See Chapter 9
2)
Undervoltage shutdown
hysteresis
VS(UV)_HYS
IGND_1
–
–
850
4.8
–
9
mV
mA
–
P_4.2.13
P_4.2.5
Operating current channel
active
VIN = 5.5 V
V
DEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9
Standby current for whole
device with load (ambiente)
IS(OFF)
–
–
–
0.1
0.5
15
–
μA
μA
mA
1) VS = 36 V
P_4.2.7
P_4.2.10
P_4.2.8
V
OUT = 0 V
VIN floating
DEN floating
V
TJ ≤ 85 °C
See Chapter 9
Maximum standby current for IS(OFF)_150
whole device with load
8
VS = 36 V
V
OUT = 0 V
VIN floating
DEN floating
V
TJ = 150 °C
See Chapter 9
2) VS = 36 V
Standby current for whole
device with load, diagnostic
active
IS(OFF_DEN)
0.6
V
OUT = 0 V
VIN floating
DEN = 5.5 V
V
1) Test at TJ = -40°C only
2) Not subject to production test. Specified by design.
Data Sheet
PROFET™+ 24V
11
Rev. 1.1, 2014-12-17
BTT6010-1EKA
General Product Characteristics
Note:Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Table 4
Thermal Resistance
Parameter
Symbol
Values
Typ.
5
Unit Note /
Test Condition
Number
Min.
Max.
1)
Junction to soldering point
Junction to ambient
RthJS
RthJA
–
–
–
–
K/W
K/W
P_4.3.1
P_4.3.2
1) 2)
28
1) Not subject to production test. Specified by design.
2) Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip +
package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70μm Cu, 2 x 35 μm Cu). Where
applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.
4.3.1
PCB set up
70µm
35µm
1.5mm
0.3mm
PCB 2s2p.vsd
Figure 4
2s2p PCB Cross Section
PCB bottom view
PCB top view
1
2
14
13
3
4
5
6
7
12
11
10
9
COOLING
TAB
VS
8
thermique SO14.vsd
Figure 5
PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area
Data Sheet
PROFET™+ 24V
12
Rev. 1.1, 2014-12-17
BTT6010-1EKA
General Product Characteristics
4.3.2
Thermal Impedance
102
101
100
10-1
2s2p
1s0p-600mm²
1s0p-300mm²
1s0p-footprint
10-4
10-3
10-2
10-1
100
101
102
103
time [s]
Figure 6
Typical Thermal Impedance. 2s2p PCB set up according Figure 4
90
80
70
60
50
40
1s0p
30
20
10
0
100
200
300
Area [mm2]
400
500
600
700
footprint
Figure 7
Typical Thermal Resistance. PCB set up 1s0p
Data Sheet
PROFET™+ 24V
13
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
5
Power Stage
The power stage is built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
20
17
16
15
18
16
14
13
12
11
10
9
14
12
10
8
8
7
6
-40
-20
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
Junction Temperature T [°C]
Supply Voltage V [V]
J
S
Figure 8
Typical ON-state Resistance
A high signal (see Chapter 8) at the input pin causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 9 shows the typical timing when switching a resistive load.
IN
VIN _H
VIN _L
t
VOUT
90% VS
dV/dt
ON
dV/dt
OFF
tON
tOFF_DELAY
70% VS
30% VS
10% VS
tON_DELAY
tOFF
t
Switching times.vsd
Figure 9
Switching a Resistive Load Timing
Data Sheet
PROFET™+ 24V
14
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
VDS
IN
LOGIC
IL
VBAT
OUT
GND
VOUT
VIN
L, RL
ZGND
Output clamp.svg
Figure 10 Output Clamp
IN
t
VOUT
VS
t
VS-VDS(AZ)
IL
t
Switching an inductance.vsd
Figure 11 Switching an Inductive Load Timing
Data Sheet
PROFET™+ 24V
15
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTT6010-1EKA. This energy can
be calculated with following equation:
VS – VDS(AZ)
--------------------------------
RL
RL × IL
L
RL
⎛
× ln 1 –
⎝
⎞
⎠
------
--------------------------------
VS – VDS(AZ)
E = VDS(AZ)
×
×
+ IL
(1)
Following equation simplifies under the assumption of RL = 0 Ω.
VS
1
2
2
⎛
⎞
⎠
--
E = × L × I × 1 –
--------------------------------
VS – VDS(AZ)
(2)
⎝
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
1000
100
10
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
IL(A)
Figure 12 Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 28V
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel
is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of
VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions are
available.
Data Sheet
PROFET™+ 24V
16
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
VBAT
VS
Gate driver
VINV
IL(INV)
Device
logic
INV
Comp.
OUT
GND
ZGND
inverse current.svg
Figure 13 Inverse Current Circuitry
Data Sheet
PROFET™+ 24V
17
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
5.5
Electrical Characteristics Power Stage
Table 5
Electrical Characteristics: Power Stage
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
20
Unit Note /
Test Condition
Number
Min.
RDS(ON)_150 15
Max.
ON-state resistance per
channel
22
mΩ
IL = IL4 = 10 A
P_5.5.1
VIN = 4.5 V
TJ = 150 °C
See Figure 8
ON-state resistance per
channel
RDS(ON)_25
IL(NOM)
–
10
9
–
mΩ
A
1) TJ = 25 °C
P_5.5.21
P_5.5.2
Nominal load current
–
–
1) TA = 85 °C
TJ < 150 °C
Output voltage drop limitation VDS(NL)
at small load currents
–
10
70
22
75
mV
V
IL = IL0 = 50 mA P_5.5.4
See Chapter 9
Drain to source clamping
voltage
VDS(AZ)
66
I
DS = 20 mA
P_5.5.5
P_5.5.6
P_5.5.8
See Figure 11
V
DS(AZ) = [VS - VOUT
]
See Chapter 9
2)
Output leakage current
IL(OFF)
–
–
0.05
8
0.5
15
μA
μA
V floating
IN
TJ ≤ 85 °C
VOUT = 0 V
TJ ≤ 85 °C
Output leakage current
IL(OFF)_150
VIN floating
TJ = 150 °C
VOUT = 0 V
TJ = 150 °C
Slew rate
30% to 70% VS
dV/dtON
-dV/dtOFF
ΔdV/dt
0.3
0.3
-0.15
20
0.65
0.65
0
1.4
1.4
0.15
150
150
50
V/μs RL = 4 Ω
VS = 28 V
P_5.5.11
P_5.5.12
P_5.5.13
P_5.5.14
P_5.5.15
P_5.5.16
P_5.5.17
P_5.5.18
See Figure 9
See Chapter 9
Slew rate
70% to 30% VS
V/μs
V/μs
μs
Slew rate matching
dV/dtON - dV/dtOFF
Turn-ON time to VOUT = 90% tON
VS
70
70
0
Turn-OFF time to VOUT = 10% tOFF
VS
20
μs
Turn-ON / OFF matching
OFF - tON
ΔtSW
-50
–
μs
t
Turn-ON time to VOUT = 10% tON_delay
VS
35
35
70
μs
Turn-OFF time to VOUT = 90% tOFF_delay
–
70
μs
VS
Data Sheet
PROFET™+ 24V
18
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Power Stage
Table 5
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
2.1
Unit Note /
Test Condition
Number
Min.
Max.
Switch ON energy
EON
–
–
mJ
1) RL = 4 Ω
OUT = 90% VS
P_5.5.19
V
VS = 36 V
See Chapter 9
Switch OFF energy
EOFF
–
2.3
–
mJ
1) RL = 4 Ω
P_5.5.20
VOUT = 10% VS
VS = 36 V
See Chapter 9
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
Data Sheet
PROFET™+ 24V
19
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pin.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTT6010-1EKA to ensure switching OFF of the channel.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches
the situation.
ZIS(AZ)
VS
ZD(AZ)
VBAT
ZDS(AZ)
IS
DEN
IN
RSENSE
RDEN
RIN
IOUT(GND)
LOGIC
OUT
L, RL
ZDESD
GND
RIS
ZGND
Loss of ground protection single.svg
Figure 14 Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON.
If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the
supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch
is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM
range. Figure 15 sketches the undervoltage mechanism.
Data Sheet
PROFET™+ 24V
20
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
VOUT
VS
VS(UV)
VS(OP)
Undervoltage behavio.remf
Figure 15 Undervoltage Behavior
6.3
Overvoltage Protection
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16
shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power
transistor switches ON and in addition the voltage across the logic section is clamped. As a result, the internal
ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin IN and DEN rises almost to
that potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to
overvoltage, the BTT6010-1EKA remains ON. In the case the BTT6010-1EKA was OFF, prior to overvoltage, the
power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output
transistor is still operational and follows the input. If the channel is in the ON state, parameters are no longer
guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the
short circuit robustness, as well as the maximum energy EAS capability.
ISOV
ZIS(AZ)
VS
I N 1
ZD(AZ)
VBAT
ZDS(AZ)
IS
RSENSE
DEN
IN
RDEN
RIN
LOGIC
I N 0
OUT
ZDESD
GND
RIS
ZGND
L, RL
Figure 16 Overvoltage Protection with External Components
Data Sheet
PROFET™+ 24V
21
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a
typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDEN
and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used to
limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RIN = RSENSE
= 10 kΩ.
During reverse polarity, no protection functions are available.
Micro controller
protection diodes
ZIS(AZ)
VS
ZD(AZ)
ZDS(AZ)
IS
RSENSE
VDS(REV)
DEN
RDEN
LOGIC
IN
-VS(REV)
RIN
OUT
ZDESD
GND
IS
RGND
RIS
D
Reverse Polarity.vsd
Figure 17 Reverse Polarity Protection with External Components
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6010-1EKA offers
several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS. The current limitation value is VDS dependent. Figure 18 shows the behavior of
the current limitation as a function of the drain to source voltage.
Data Sheet
PROFET™+ 24V
22
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
120
110
100
90
80
70
60
50
40
30
3
8
13
18
23
28
33
38
43
48
Drain Source Voltage VDS (V)
Figure 18 Current Limitation (typical behavior)
6.5.2
Temperature Limitation in the Power DMOS
The channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of either
sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF latches
the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the situation.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).
Data Sheet
PROFET™+ 24V
23
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
IN
t
IL
LOAD CURRENT BELOW
LIMITATION PHASE
LOAD CURRENT LIMITATION PHASE
IL(x)SC
IL(NOM)
t
TDMOS
TJ(SC)
Temperature
protection phase
ΔTJ(SW)
TA
tsIS(FAULT)
t
t
tsIS(OC_blank)
IIS
IIS(FAULT)
IL(NOM) / kILIS
0A
tsIS(OF F)
VDEN
0V
t
Hard start.vsd
Figure 19 Overload Protection
Note:For better understanding, the time scale is not linear. The real timing of this drawing is application dependant
and cannot be described.
Data Sheet
PROFET™+ 24V
24
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 6
Electrical Characteristics: Protection
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
Loss of Ground
Output leakage current while IOUT(GND)
GND disconnected
–
0.1
–
mA
mV
1) 2) VS = 48 V
See Figure 14
P_6.6.1
P_6.6.2
Reverse Polarity
Drain source diode voltage
during reverse polarity
VDS(REV)
420
66
650
700
75
IL = - 4 A
TJ = 150 °C
See Figure 17
Overvoltage
Overvoltage protection
VS(AZ)
70
V
I
SOV = 5 mA
P_6.6.3
See Figure 16
Overload Condition
3)
Load current limitation
IL5(SC)
IL28(SC)
ΔTJ(SW)
TJ(SC)
90
–
115
57.5
80
140
–
A
A
K
V
= 7 V
P_6.6.4
P_6.6.7
P_6.6.8
P_6.6.10
DS
See Chapter 9
2) VDS = 42 V
See Figure
4) See Figure 19
5) See Figure 19
Load current limitation
Dynamic temperature
increase while switching
–
–
Thermal shutdown
temperature
150
–
170 4) 200 4) °C
30
Thermal shutdown hysteresis ΔTJ(SC)
–
K
5) 4) See Figure 19 P_6.6.11
1) All pins are disconnected except VS and OUT.
2) Not Subject to production test, specified by design
3) Test at TJ = -40°C only
4) Functional test only
5) Test at TJ = +150°C only
Data Sheet
PROFET™+ 24V
25
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTT6010-1EKA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sense current of the channel is enabled.
7.1
IS Pin
The BTT6010-1EKA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 20. The accuracy of the sense current depends on temperature and load
current. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other
devices if these devices are using another battery feed. The consequence is that the unsupplied device would be
fed via the IS pin of the supplied device.
Vs
IIS
=
FAULT
IIS(FAULT)
IL / kILIS
ZIS(AZ)
1
0
1
IS
0
DEN
Sense schematic single.svg
Figure 20 Diagnostic Block Diagram
Data Sheet
PROFET™+ 24V
26
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 7 gives a quick reference for the state of the IS pin during device operation.
Table 7 Sense Signal, Function of Operation Mode
Operation Mode
Normal operation
Short circuit to GND
Overtemperature
Short circuit to VS
Open Load
Input level Channel X
DEN
Output Level Diagnostic Output
OFF
H
Z
Z
Z
Z
~ GND
Z
VS
IIS(FAULT)
< VOL(OFF)
> VOL(OFF)
Z
1)
IIS(FAULT)
Inverse current
~ VINV
~ VS
< VS
~ GND
Z
IIS(FAULT)
Normal operation
Current limitation
Short circuit to GND
ON
IIS = IL / kILIS
IIS(FAULT)
IIS(FAULT)
Overtemperature TJ(SW)
IIS(FAULT)
event
Short circuit to VS
Open Load
VS
IIS < IL / kILIS
IIS < IIS(OL)
2)
~ VS
3)
Inverse current
Underload
~ VINV
IIS < IIS(OL)
4)
~ VS
IIS(OL) < IIS < IL / kILIS
Don’t care
Don’t care
L
Don’t care
Z
1) With additional pull-up resistor.
2) The output current has to be smaller than IL(OL)
.
3) After maximum tINV
.
4) The output current has to be higher than IL(OL)
.
Data Sheet
PROFET™+ 24V
27
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7.3
SENSE Signal in the Nominal Current Range
Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually, a
pull-down resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit
the power losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense
current, assuming an ideal kILIS factor value. The red curves shows the accuracy the device provide across full
temperature range, at a defined current.
3
2.5
2
1.5
1
0.5
min/max Sense Current
typical Sense Current
0
0
1
2
3
4
5
6
7
8
9
10
I
[A]
L
BTT6010-1EKA
Figure 21 Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required around half the nominal current IL(NOM). To achieve this accuracy
requirement, a calibration on the application is possible. To avoid multiple calibration points at different load and
temperature conditions, the BTT6010-1EKA allows limited derating of the kILIS value, at a given point (IL3; TJ =
+25 °C). This derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the sense current,
assuming one calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration
point at nominal temperature and nominal battery voltage.
The red lines indicate the kILIS accuracy without calibration.
Data Sheet
PROFET™+ 24V
28
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
calibrated k
ILIS
min/max k
ILIS
typical k
ILIS
0
1
2
3
4
5
6
7
8
9
10
I
[A]
L
BTT6010-1EKA
Figure 22 Improved Current Sense Accuracy with One Calibration Point at 2A
7.3.2
SENSE Signal Timing
Figure 23 shows the timing during settling and disabling of the sense.
VIN
t
IL
tON
tOFF
tON
90% of
IL static
t
VDEN
t
t
IIS
tsIS(LC)
tsIS(OFF)
tsIS(ON)
tsIS(ON_DEN)
90% of
IIS static
current sense settling disabling time .vsd
Figure 23 Current Sense Settling / Disabling Timing
Data Sheet
PROFET™+ 24V
29
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7.3.3
SENSE Signal in Open Load
Open Load in ON Diagnostic
7.3.3.1
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN is selected. In that case, the SENSE current
is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows the
SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the ideal
current sense.
IIS
IIS(OL)
IL
IL(OL)
Sense for OL .vsd
Figure 24 Current Sense Ratio for Low Currents
7.3.3.2
Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc.... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel is
OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched
to the IIS(FAULT)
.
An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.
Data Sheet
PROFET™+ 24V
30
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
Vbat
SOL
VS
IIS(FAULT)
ROL
OL
comp.
OUT
IS
ILOFF
Ileakage
GND
ZGND
RIS
RPD
VOL(OFF)
Rleakage
Open Load in OFF.svg
Figure 25 Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3
Open Load Diagnostic Timing
Figure 26 shows the timing during either Open load in ON or OFF condition when the DEN pin is HIGH. Please
note that a delay tsIS(FAULT_OL_OFF) has to be respected after the falling edge of the input and rising edge of the DEN,
when applying an open load in OFF diagnosis request, otherwise the voltage VOUT cannot be guaranteed and the
diagnosis can be wrong.
Load is present
Open load
VIN
VOUT
t
VS-VOL(OFF)
shutdown with load
RDS(ON) x IL
t
t
IOUT
tsIS(FAULT_OL_ON_OFF)
IIS
tsIS(LC)
t
Error Settling Disabling Time.vsd
Figure 26 SENSE Signal in Open Load Timing
7.3.4
SENSE Signal with OUT in Short Circuit to VS
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTT6010-1EKA, which can be recognized at the current sense
Data Sheet
PROFET™+ 24V
31
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case,
an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation.
Vbat
VS
IIS(FAULT)
VBAT
OL
comp.
IS
OUT
VOL(OFF)
GND
ZGND
RSC_VS
RIS
Short circuit to Vs.svg
Figure 27 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic temperature
condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If the DEN pin is
activated the SENSE follows the output stage. If no reset of the latch occurs, the device remains in the latching
phase and IIS(FAULT) at the IS pin, eventhough the DMOS is OFF.
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the sense signal will indicate open load in OFF state and indicate open load in ON
state.
Data Sheet
PROFET™+ 24V
32
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Function
Table 8
Electrical Characteristics: Diagnostics
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
Load Condition Threshold for Diagnostic
Open load detection
threshold in OFF state
VS - VOL(OFF)
IL(OL)
4
–
–
6
V
VIN = 0 V
VDEN = 4.5 V
P_7.5.1
P_7.5.2
Open load detection
threshold in ON state
10
50
mA VIN = VDEN = 4.5 V
IIS(OL) = 6.5 μA
See Figure 24
See Chapter 9
Sense Pin
IS pin leakage current when IIS_(DIS)
sense is disabled
–
1
–
–
1
μA
VIN = 4.5 V
P_7.5.4
P_7.5.6
V
DEN = 0 V
IL = IL4 = 10 A
Sense signal saturation
voltage
VS - VIS
3.5
V
VIN = 0 V
V
V
OUT = VS > 10 V
DEN = 4.5 V
(RANGE)
IIS = 6 mA
See Chapter 9
Sense signal maximum
current in fault condition
IIS(FAULT)
6
20
70
40
75
mA VIS = VIN = 0 V
P_7.5.7
P_7.5.3
V
V
OUT = VS > 10 V
DEN = 4.5 V
See Figure 20
See Chapter 9
Sense pin maximum voltage VIS(AZ)
66
V
IIS = 5 mA
See Figure 20
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio
L0 = 50 mA
Current sense ratio
L1 = 0.5 A
Current sense ratio
L2 = 2 A
Current sense ratio
L3 = 4 A
Current sense ratio
kILIS0
kILIS1
kILIS2
kILIS3
kILIS4
-50%
-40%
-18%
-10%
-9%
4500
3900
3900
3900
3900
0
+50%
+40%
+18%
+10%
+9%
VIN = 4.5 V
VDEN = 4.5 V
See Figure 21
P_7.5.8
I
P_7.5.9
TJ = -40 °C; 150 °C
I
P_7.5.10
P_7.5.11
P_7.5.12
P_7.5.17
I
I
I
L4 = 10 A
kILIS derating with current and ΔkILIS
-8
+8
%
1) kILIS3 versus kILIS2
See Figure 22
temperature
Diagnostic Timing in Normal Condition
Data Sheet
PROFET™+ 24V
33
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Diagnostic Functions
Table 8
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
–
Unit Note /
Test Condition
Number
Min.
Max.
Current sense settling time to tsIS(ON)
ILIS function stable after
–
150
μs
μs
μs
1) VDEN = VIN = 0 to
4.5 V ; VS =28 V
RIS = 1.2 kΩ
P_7.5.18
P_7.5.19
P_7.5.20
k
positive input slope on both
INput and DEN
CSENSE < 100 pF
IL = IL3 = 4 A
See Figure 23
Current sense settling time
with load current stable and
transition of the DEN
tsIS(ON_DEN)
–
–
–
–
10
20
VIN = 4.5 V
V
DEN = 0 to 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
C
IL = IL3 = 4 A
See Figure 23
Current sense settling time to tsIS(LC)
IIS stable after positive input
slope on current load
VIN = 4.5 V
V
DEN = 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
IL = IL2 = 2 A to IL3
C
=
4 A ; See Figure 23
Diagnostic Timing in Open Load Condition
Current sense settling time to tsIS(FAULT_OL_
–
–
–
100
150
μs
μs
VIN = 0V
P_7.5.22
P_7.5.24
IIS stable for open load
V
DEN = 0 to 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
OUT = VS = 28 V
OFF)
detection in OFF state
C
V
See Figure 26
Diagnostic Timing in Overload Condition
1)
Current sense settling time to tsIS(FAULT)
IIS stable for overload
detection
0
V = VDEN = 0 to
IN
4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
V
DS = 24 V
See Figure 19
1)
Current sense over current
blanking time
tsIS(OC_blank)
–
0
350
–
μs
μs
VIN =VDEN = 4.5 V P_7.5.32
RIS = 1.2 kΩ
SENSE < 100 pF
DS = 5 V to 0 V
C
V
See Figure 19
Diagnostic disable time
DEN transition to
IIS < 50% IL /kILIS
tsIS(OFF)
–
20
VIN = 4.5 V
P_7.5.25
V
DEN = 4.5 V to 0 V
RIS = 1.2 kΩ
SENSE < 100 pF
IL = IL3 = 4 A
C
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 24V
34
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage
thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is slowly
increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input
circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In case the
pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via an
input resistor.
IN
GND
Input circuitry.vsd
Figure 28 Input Pin Circuitry
8.2
DEN Pin
The DEN pin enables and disables the diagnostic functionality of the device. The pin has the same structure as
the INput pin, please refer to Figure 28.
8.3
Input Pin Voltage
The IN and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set
by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and
depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Data Sheet
PROFET™+ 24V
35
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Input Pins
8.4
Electrical Characteristics
Table 9
Electrical Characteristics: Input Pins
VS = 8 V to 36 V, TJ = -40 °C to +150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
INput Pins Characteristics
Low level input voltage range VIN(L)
High level input voltage range VIN(H)
-0.3
2
–
0.8
6
V
See Chapter 9
See Chapter 9
1) See Chapter 9 P_8.4.3
P_8.4.1
P_8.4.2
–
V
Input voltage hysteresis
Low level input current
High level input current
VIN(HYS)
IIN(L)
IIN(H)
–
250
10
10
–
mV
μA
μA
1
25
25
VIN = 0.8 V
P_8.4.4
P_8.4.5
2
VIN = 5.5 V
See Chapter 9
DEN Pin
Low level input voltage range VDEN(L)
High level input voltage range VDEN(H)
-0.3
2
–
0.8
6
V
–
P_8.4.6
P_8.4.7
P_8.4.8
P_8.4.9
P_8.4.10
–
V
–
1)
Input voltage hysteresis
Low level input current
High level input current
VDEN(HYS)
IDEN(L)
–
250
10
10
–
mV
μA
μA
1
25
25
V
DEN = 0.8 V
DEN = 5.5 V
IDEN(H)
2
V
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 24V
36
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
9
Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 28 V and 36 V over temperature range.
9.1
General Product Characteristics
P_4.2.3
P_4.2.4
4
5
3.9
3.8
3.7
3.6
3.5
3.4
3.3
3.2
3.1
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
8V
8V
28V
36V
28V
36V
3
3
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Minimum Functional Supply Voltage
S(OP)_MIN = f(TJ)
Undervoltage Threshold VS(UV) = f(TJ)
V
P_4.2.7
12
8V
28V
36V
10
8
6
4
2
0
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Standby Current for Whole Device with Load.
S(OFF) = f(TJ;VS)
I
Data Sheet
PROFET™+ 24V
37
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
9.2
Power Stage
P_5.5.4
P_5.5.5
69.4
14
69.2
69
12
10
8
68.8
68.6
68.4
68.2
68
6
4
67.8
67.6
67.4
8V
8V
2
28V
36V
28V
36V
0
67.2
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Output Voltage Drop Limitation at Low Load Current Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
DS(NL) = f(TJ; VS)
V
P_5.5.11
P_5.5.12
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
8V
8V
28V
36V
28V
36V
0
0
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Slew Rate at Turn ON
dV/dtON = f(TJ;VS), RL = 4 Ω
Slew Rate at Turn OFF
- dV/dtOFF = f(TJ;VS), RL = 4 Ω
Data Sheet
PROFET™+ 24V
38
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
P_5.5.14
P_5.5.15
90
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
8V
8V
28V
36V
28V
36V
0
0
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Turn ON TON = f(TJ;VS), RL = 4 Ω
Turn OFF TOFF = f(TJ;VS), RL = 4 Ω
P_5.5.19
P_5.5.20
6000
6000
5000
4000
3000
2000
1000
0
5000
4000
3000
2000
1000
0
25°C
25°C
‐40°C
150°C
‐40°C
150°C
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Supply Voltage [V]
Supply Voltage [V]
Switch ON Energy EON = f(TJ;VS), RL = 4 Ω
Switch OFF Energy EOFF = f(TJ;VS), RL = 4 Ω
Data Sheet
PROFET™+ 24V
39
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
9.3
Protection Functions
P_6.6.4
P_6.6.7
56
115
55
54
53
52
51
50
49
110
105
100
95
90
48
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Overload Condition in the Low Voltage Area
L5(SC) = f(TJ);
Overload Condition in the High Voltage Area
L28(SC) = f(TJ);
I
I
Data Sheet
PROFET™+ 24V
40
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
9.4
Diagnostic Mechanism
P_7.5.2
2.5
2
29
27
25
23
21
19
17
1.5
1
0.5
0
8V
8V
28V
36V
28V
36V
15
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Current Sense at no Load
IIS = f(TJ;VS), IL = 0
Open Load Detection ON State Threshold
IL(OL) = f(TJ;VS)
P_7.5.6
P_7.5.7
2.4
30
2.35
2.3
25
20
15
10
5
2.25
2.2
2.15
2.1
2.05
2
8V
8V
28V
36V
28V
36V
1.95
0
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Sense Signal Maximum Voltage
VS - VIS(RANGE) = f(TJ)
Sense Signal Maximum Current in Fault Condition
IS(FAULT) = f(TJ;VS)
I
Data Sheet
PROFET™+ 24V
41
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Characterization Results
9.5
Input Pins
P_8.4.1
P_8.4.2
1.9
1.7
1.5
1.3
1.1
0.9
0.7
1.9
1.7
1.5
1.3
1.1
0.9
0.7
8V
8V
28V
36V
28V
36V
0.5
0.5
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Input Voltage Threshold
VIN(L)= f(TJ;VS)
Input Voltage Threshold
VVIN(H)= f(TJ;VS)
V
P_8.4.3
P_8.4.5
450
16
400
350
300
250
200
150
100
50
14
12
10
8
8V
8V
6
28V
36V
28V
36V
4
2
0
0
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Input Voltage Hysteresis
IN(HYS) = f(TJ;VS)
Input Current High Level
IN(H) = f(TJ)
V
I
Data Sheet
PROFET™+ 24V
42
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Application Information
10
Application Information
Note:The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
Voltage Regulator
T1
OUT
VS
GND
Z
CVS
VDD
VS
RDEN
I/O
DEN
IN
Micro
controller
OUT4
OT3
OUT
RIN
I/O
COUT
RSENSE
IS
A/D
GND
GND
CSENSE
D
Figure 29 Application Diagram with BTT6010-1EKA
Note:This is a very simplified example of an application circuit. The function must be verified in the real application.
Table 10
Bill of Material
Reference Value
Purpose
RIN
10 kΩ
10 kΩ
47 kΩ
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTT6010-1EKA channels OFF during loss of ground
RDEN
RPD
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTT6010-1EKA channels OFF during loss of ground
Polarization of the output
Improve BTT6010-1EKA immunity to electromagnetic noise
RIS
1.2 kΩ
10 kΩ
Sense resistor
RSENSE
Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
ROL
1.5 kΩ
Ensure polarization of the BTT6010-1EKA output during open load in OFF
diagnostic
D
BAS21
Protection of the BTT6010-1EKA during reverse polarity
Data Sheet
PROFET™+ 24V
43
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Application Information
Table 10
Bill of Material (cont’d)
Reference Value
Purpose
RGND
Z
27 Ω
To limit the GND current at a safe value during ISO pulse
Protection of the device during overvoltage
58 V Zener
diode
T1
Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic
CSENSE
CVS
100 pF
100 nF
10 nF
Sense signal filtering
Filtering of the voltage spikes on the battery line
Protection of the BTT6010-1EKA during ESD and BCI
COUT
Data Sheet
PROFET™+ 24V
44
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Application Information
10.1
Further Application Information
•
•
•
Please contact us to get the pin FMEA
Existing App. Notes
For further information you may visit http://www.infineon.com/profet
Data Sheet
PROFET™+ 24V
45
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Revision History
11
Revision History
Version Date
Changes
1.1
1.0
2014-12-17
2014-10-30
Update of Figure 21 and 22
Creation of the document
Data Sheet
PROFET™+ 24V
46
Rev. 1.1, 2014-12-17
BTT6010-1EKA
Package Outlines
12
Package Outlines
0.35 x 45˚
1)
0.1
3.ꢀ
0.1 C D 2x
8˚ MAX.
8˚ MAX.
0˚...8˚
0.08
Seating Plane
C
C
1.27
0˚...8˚
2)
0.0ꢀ
0.2
0.41
6
M
M
0.2
D
0.2
C A-B D 14x
D
Bottom View
0.25
6.4
A
14
8
1
7
1
7
14
8
B
0.1 C A-B 2x
0.1
8.65
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.13 max.
3) JEDEC reference MS-012 variation BB
PG-DSO-14-33,-40,-43 V02
Figure 30 PG-DSO-14-47 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
PROFET™+ 24V
47
Rev. 1.1, 2014-12-17
Edition 2014-12-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Legal Disclaimer for short-circuit capability
Infineon disclaims any warranties and liabilities, whether expressed nor implied, for any short-circuit failures below
the threshold limit.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
相关型号:
BTT6030-2ERA
The BTT6030-2ERA is a 32mΩ dual channel Smart High-Side Power Switch, embedded in a PG-TDSO-14, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 3 x P21W24V or 1 x 70W 24V, as well as LEDs in the harsh automotive environment.
INFINEON
BTT6030-2ERB
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to 2 * P21W 24V, as well as LEDs in the harsh automotive environment.
INFINEON
BTT60302EKAXUMA1
Buffer/Inverter Based Peripheral Driver, 4A, PDSO14, GREEN, PLASTIC, MS-012BB, SOP-14
INFINEON
BTT6050-1ERA
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 2 * P21W 24V, as well as LEDs in the harsh automotive environment.
INFINEON
BTT6050-2EKA
Buffer/Inverter Based Peripheral Driver, 3A, PDSO14, GREEN, PLASTIC, MS-012BB, SOP-14
INFINEON
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