BUP307D [INFINEON]
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode); IGBT用反并联二极管（低正向压降高开关速度低尾电流闭锁免费包括快速续流二极管）
| 型号： | BUP307D |
| 厂家： | 
Infineon |
| 描述： | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
| 文件： | 总7页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 307D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
I
Package
Ordering Code
CE
C
BUP 307D
1200V 35A
TO-218 AB
Q67040-A4221-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1200
V
CE
CGR
R
= 20 kΩ
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
35
23
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
70
46
C
T = 90 °C
C
Diode forward current
I
I
F
T = 90 °C
18
C
Pulsed diode current, t = 1 ms
p
Fpuls
T = 25 °C
108
300
C
Power dissipation
P
W
tot
T = 25 °C
C
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Semiconductor Group
1
Dec-02-1996
BUP 307D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
E
-
55 / 150 / 56
Thermal Resistance
≤
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
R
R
0.42
1.25
K/W
thJC
thJCD
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 0.35 mA, T = 25 °C
4.5
5.5
6.5
GE
CE, C
j
Collector-emitter saturation voltage
CE(sat)
V
V
V
V
= 15 V, I = 25 A, T = 25 °C
-
-
-
-
2.7
3.3
3.4
4.3
3.2
3.9
GE
GE
GE
GE
C
j
= 15 V, I = 25 A, T = 125 °C
C
j
= 15 V, I = 42 A, T = 25 °C
-
C
j
= 15 V, I = 42 A, T = 125 °C
-
C
j
Zero gate voltage collector current
= 1200 V, V = 0 V, T = 25 °C
I
I
mA
nA
CES
GES
V
-
-
-
-
0.5
CE
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
100
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 15 A
5.5
8
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
2000
160
65
2700
240
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
100
CE
GE
Semiconductor Group
2
Dec-02-1996
BUP 307D
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
Switching Characteristics, Inductive Load at T = 125 °C
max.
j
Turn-on delay time
= 600 V, V = 15 V, I = 15 A
t
t
t
t
ns
d(on)
V
CC
GE
C
R
= 33 Ω
-
-
-
-
-
30
45
35
310
28
-
Gon
Rise time
= 600 V, V = 15 V, I = 15 A
r
V
CC
GE
C
R
= 33 Ω
22
Gon
Turn-off delay time
= 600 V, V = -15 V, I = 15 A
d(off)
V
CC
GE
C
Ω
R
= 33
230
20
Goff
Fall time
= 600 V, V = -15 V, I = 15 A
f
V
CC
GE
C
Ω
= 33
R
Goff
Total turn-off loss energy
= 600 V, V = -15 V, I = 15 A
E
mWs
off
V
CC
GE
C
Ω
R
= 33 , T = 25 °C
1.7
Goff
j
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 15 A, V = 0 V, T = 25 °C
-
-
2.4
1.9
2.95
-
F
GE
j
I = 15 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 15 A, V = -600 V, V = 0 V
t
ns
rr
F
R
GE
di /dt = -800 A/µs
F
T = 25 °C
-
-
-
-
j
T = 125 °C
100
150
j
Reverse recovery charge
I = 15 A, V = -600 V, V = 0 V
Q
µC
rr
F
R
GE
di /dt = -800 A/µs
F
T = 25 °C
-
-
1
3
1.8
5.4
j
T = 125 °C
j
Semiconductor Group
3
Dec-02-1996
BUP 307D
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
320
W
36
A
Ptot
240
IC
28
24
20
16
12
8
200
160
120
80
40
0
4
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 2
10 0
t
= 7.9µs
10 µs
p
A
K/W
IC
ZthJC
100 µs
10 1
10 -1
1 ms
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ms
10 0
10 -2
single pulse
DC
10 -1
10 -3
10 -5
10 0
10 1
10 2
10 3
V
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Dec-02-1996
BUP 307D
Typ. output characteristics
I = f(V
Typ. transfer characteristics
I = f (V
)
CE
)
GE
C
C
parameter: t = 80 µs, T = 125 °C
parameter: t = 80 µs, V = 20 V, T = 25 °C
P CE j
p
j
Typ. saturation characteristics
= f (V
Typ. saturation characteristics
VCE(sat) = f (V )
V
)
CE(sat)
GE
GE
parameter: T = 25 °C
parameter: T = 125 °C
j
j
Semiconductor Group
5
Dec-02-1996
BUP 307D
Typ. capacitances
C = f (V
Typ. gate charge
ƒ
)
V
= (Q
)
CE
GE
Gate
parameter: I
= 20 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
20
V
16
VGE
400 V
800 V
14
12
10
8
6
4
2
0
0
20 40 60 80 100 120 140 nC 180
QGate
Short circuit safe operating area
= f (V ) , T = 150°C
Reverse biased safe operating area
I = f (V ) , T = 150°C
Cpuls
I
Csc
CE
j
CE
j
parameter: VGE = ± 15 V, tsc 10 µs, L < 25 nH
parameter: VGE = 15 V
≤
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
1.0
4
2
0
0.5
0.0
0
200 400 600 800 1000 1200
V
1600
0
200 400 600 800 1000 1200
V
1600
Semiconductor Group
6
Dec-02-1996
BUP 307D
Typ. switching time
t = f (R ), inductive load, T = 125 °C
G
j
parameter: V = 600 V, V = ± 15 V, I = 15 A
CE
GE
C
Typ. forward characteristics
I = f (V )
Transient thermal impedance Diode
ƒ
= (t )
p
Z
F
F
th JC
parameter: D = t / T
parameter: T
p
j
10 1
30
A
K/W
26
IF
24
22
20
18
16
14
12
10
8
ZthJC
10 0
Tj=125°C
Tj=25°C
10 -1
D = 0.50
0.20
0.10
0.05
10 -2
0.02
6
0.01
4
single pulse
2
0
10 -3
10 -5
0.0
0.5
1.0
1.5
2.0
V
3.0
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VF
Semiconductor Group
7
Dec-02-1996
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