CPV363M4U [INFINEON]
IGBT SIP MODULE; IGBT模块SIP型号: | CPV363M4U |
厂家: | Infineon |
描述: | IGBT SIP MODULE |
文件: | 总10页 (文件大小:277K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD -5039
CPV363M4U
PRELIMINARY
IGBT SIP MODULE
UltraFast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
D 1
D 3
D 4
D 5
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
3
6
9
4
1 5
1 0
1 6
D 2
1 2
1 8
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7
1 3
1 9
7.1 ARMS per phase (2.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
13
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
IC @ TC = 100°C
6.8
ICM
40
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
40
IF @ TC = 100°C
6.1
IFM
40
VGE
±20
2500
36
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
14
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
3.5
5.5
Units
°C/W
g (oz)
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
θJC (DIODE)
θCS (MODULE)
–––
0.10
–––
–––
Wt
Weight of module
20 (0.7)
12/30/96
CPV363M4U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.70 2.2
––– 2.00 –––
IC = 6.8A
VGE = 15V
V
IC = 13A
See Fig. 2, 5
––– 1.70 –––
IC = 6.8A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
4.0 6.0 –––
––– ––– 250
––– ––– 2500
––– 1.4 1.7
––– 1.3 1.6
S
VCE = 100V, IC = 6.8A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 53
––– 7.7
––– 21
79
12
31
IC = 6.8A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
––– 43 –––
––– 14 –––
––– 95 140
––– 83 190
––– 0.17 –––
––– 0.15 –––
––– 0.32 0.45
––– 41 –––
––– 16 –––
––– 110 –––
––– 230 –––
––– 0.52 –––
––– 1100 –––
––– 73 –––
––– 14 –––
IC = 6.8A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
td(on)
tr
td(off)
tf
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 6.8A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
Turn-Off Delay Time
Fall Time
Ets
Total Switching Loss
Input Capacitance
mJ diode reverse recovery.
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
––– 42
––– 83 120
Diode Peak Reverse Recovery Charge ––– 3.5 6.0
––– 5.6 10
60
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
IF = 12A
VR = 200V
Irr
Qrr
Diode Reverse Recovery Charge
––– 80 180
––– 220 600
nC
di/dt =200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 180 ––– A/µs TJ = 25°C See Fig.
––– 116 ––– TJ = 125°C 17
CPV363M4U
12
10
8
3.50
T c = 9 0°C
T j = 1 25 °C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
2.92
V cc = 50 % o f R a ted Vo lta g e
2.33
1.75
6
1.17
0.58
4
2
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1 0 0
1 0
1
1 0 0
J
T
= 150°C
1 0
T
J
= 150°C
J
T
= 25°C
J
T
= 25°C
1
V G E = 15V
20µs PULSE WIDTH
V C C = 10V
5µs PULSE WIDTH
A
A
0. 1
0. 1
0. 1
1
1 0
5
6
7
8
9
1 0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
C E
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV363M4U
1 4
1 2
1 0
8
3.0
2.0
1.0
V
= 15V
V G E = 15V
GE
80 us PULSE WIDTH
I =13.6A
C
I = 6.8A
C
6
4
I = 3.4A
C
2
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
°
, Junction Temperature ( C)
T
T
, Case Temperature (°C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
D M
0.02
0 .1
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Note s:
1. Du ty factor D =
t
/ t
2
1
2. Pe ak T = P
x Z
+ T
C
D M
J
th JC
1
0.01
0.0000 1
0.0001
0.001
0.0 1
0.1
1 0
t
, R e ctan gu la r P ulse D ura tion (s ec )
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
CPV363M4U
20
16
12
8
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
0
V
= 400V
= 6.8A
CC
V
C
C
C
= 0V,
= C
f = 1MHz
GE
ies
I
+ C
+ C
,
C
SHORTED
C
ge
g c
ce
= C
= C
res
oes
gc
ce
g c
C
ie s
C
C
o e s
re s
4
A
0
0
10
20
30
40
50
60
1
1 0
1 0 0
Q
G
, Total Gate Charge (nC)
V
, Collector-to-Em itter Voltage (V)
C E
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.40
0.38
0.36
0.34
0.32
0.30
Ω
R
= 23O
= 15V
V
V
= 480V
= 15V
= 25 C
G
CC
GE
V
GE
°
V = 480V
T
CC
J
I
= 6.8A
C
I =13.6A
C
1
I = 6.8A
C
I = 3.4A
C
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
12
24
36
48
60
°
T , Junction Temperature ( C )
R
, Gate Resistance (O
Ω
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
CPV363M4U
100
10
1
1.2
Ω
V
T
= 20V
GE
o
J
R
T
= 23Ohm
G
J
= 125 C
°
= 150 C
V
= 480V
= 15V
CC
1.0
0.8
0.6
0.4
0.2
0.0
V
GE
SAFE OPERATING AREA
10
0.1
0
2
4
6
8
10
12
14
16
1
100
1000
I
, Collector-to-emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
1 0 0
T
= 150°C
= 125°C
J
T
J
1 0
T
=
25°C
J
1
0.4
1.4
2.4
F orwa rd Volta ge Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
CPV363M4U
1 0 0
1 0
1
1 6 0
1 2 0
8 0
VR = 200 V
TJ = 125 °C
TJ = 25°C
VR = 2 00V
TJ = 1 25°C
TJ = 2 5°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
4 0
0
1 0 0
1 0 0 0
1 0 0
1 0 0 0
di /d t - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1 0 0 0 0
6 0 0
VR = 200 V
TJ = 125 °C
TJ = 25°C
VR = 20 0V
TJ = 12 5°C
TJ = 25 °C
1 0 0 0
4 0 0
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
1 0 0
2 0 0
I
= 24A
F
I
= 6.0A
F
1 0
1 0 0
0
1 0 0
1 0 0 0
1 0 0 0
di /d t - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
CPV363M4U
90% Vge
+Vg e
Same type
device as
D.U.T.
Vce
90% Ic
10 % Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td (off)
tf
t1 +5µ S
Eoff =
Vce ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
G ATE VO LTAGE D .U .T.
Qrr =
Ic
1 0% +Vg
+Vg
tx
10 % Irr
10% Vcc
Vcc
DUT VOLTAGE
AN D C URR ENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
9 0% Ic
Ic
DIODE RECOVERY
W AVEFORM S
5% Vce
td(on)
tr
t2
Eon = Vce ie dt
t1
t4
Erec =
Vd id d t
t3
DIOD E REVERSE
REC OVER Y EN ER GY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
CPV363M4U
Vg
GATE SIGN AL
DEVICE UNDER TEST
CURR EN T D .U .T.
VOL TAGE IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
10 00V
V *
c
0 - 480V
50V
60 00µF
100 V
Figure 20. Pulsed Collector Current
Figure 19. Clamped Inductive Load Test
Test Circuit
Circuit
CPV363M4U
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline IMS-2
62.43 (2.458)
53.85 (2.120)
7.87 (.310)
5.46 (.215)
3.91 (.154)
2X
NOTES:
1. Tolerance unless otherwise
specified ± 0.254 (.010).
2. Controlling Dimension: Inch.
3. Dim ensions are shown in
M illim eter (Inches).
21.97 (.865)
4. Term inal numbers are shown
for reference only.
1
2
3
4
5
6
7
8
9 1 0 11 12 13 1 4 1 5 16 17 1 8 19
0.38 (.015)
3.94 (.155)
1.27 (.050)
3.05 ± 0.38
(.120 ± .015)
1.27 (.050)
13X
4.06 ± 0.51
(.160 ± .020)
2.54 (.100)
6X
0.76 (.030)
13X
0.51 (.020)
5.08 (.200)
6X
6.10 (.240)
IMS-2 Package Outline (13 Pins)
D im e ns io ns in M illim eters a nd (Inc hes )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/96
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