DSL70E6327HTSA1 [INFINEON]
Trans Voltage Suppressor Diode, 245W, 50V V(RWM), Unidirectional, 4 Element, Silicon, ROHS COMPLIANT PACKAGE-4;型号: | DSL70E6327HTSA1 |
厂家: | Infineon |
描述: | Trans Voltage Suppressor Diode, 245W, 50V V(RWM), Unidirectional, 4 Element, Silicon, ROHS COMPLIANT PACKAGE-4 局域网 光电二极管 |
文件: | 总6页 (文件大小:795K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DSL70
Silicon TVS diodes Array
• ESD / transient protection of e.g. ADSL, VDSL,
ISDN, WAN, LAN, I²C Bus, Microcontroller Inputs,
Video and other high-speed data lines in telecom
applications:
IEC61000-4-2 (ESD): ± ±15 kV (Air / Contact)
IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns)
IEC61000-4-5 (Lightning): 27 A (8/20 µs)
• Very low capacitance
• Extremly low reverse current < 5 nA
• Pb-free (RoHS compliant) package
DSL70
4
3
2
D3
D2
D4
D1
1
Type
DSL70
Package
SOT143
Configuration
2 channel, rail to rail
Marking
E4s
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD contact discharge per diode
Symbol
Value
15
27
Unit
kV
A
1)
2)
V
ESD
Peak pulse current (t = 8 / 20 µs)
I
p
pp
245
W
Peak pulse power (t = 8 / 20 µs)
P
p
pk
°C
Operating temperature range
Storage temperature
T
T
-55...125
-65...150
op
1
V
according to IEC61000-4-2
according to IEC61000-4-5
ESD
2
I
pp
2011-06-17
1
DSL70
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics -
-
-
-
-
50
5
V
nA
Reverse working voltage
Reverse current
V
RWM
I
R
V = 50 V
R
1)
Forward clamping voltage
= 1 A, t = 8/20 µs
V
V
FC
I
-
-
-
-
1
2.5
5
1.5
3
6
PP
P
I
= 10 A, t = 8/20 µs
PP
P
I
= 24 A, t = 8/20 µs
PP
P
I
= 27 A, t = 8/20 µs
6
9
PP
P
pF
Diode capacitance
V = 0 V, f = 1 MHz, between I/0 and GND
C
T
-
-
2.5
1.25
5
2.5
R
V = 0 V, f = 1 MHz, between I/0 pins
R
1
I
according to IEC61000-4-5
PP
2011-06-17
2
DSL70
Power derating curve P = ƒ (T )
Forward clamping voltage V = ƒ(I )
pk
A
FC
PP
t = 8 / 20 µs
p
8
110
V
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
°C
A
0
25
50
75
100
150
0
5
10
15
20
25
35
T
I
PP
A
Diode capacitance C = ı(V )
T
R
f = 1MHz
3
I/O to GND
pF
1
0
0
V
5
10
15
20
30
V
R
2011-06-17
3
DSL70
Application example DSL70
dual channel, rail to rail configuration
Connector
Protected signal line
Protected signal line
I/O
I/O
ESD sensitive
device
Vcc
4
3
D3
The protection diode should be placed
very close to the location where the
ESD or other transients can occur to
keep loops and inductances as small
as possible. Pin 1 should be connected
directly to a ground plane on the board.
D4
D2
D1
1
2
2011-06-17
4
Package SOT143
DSL70
Package Outline
0.1
1
0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
0.08...0.1
5
+0.1
0.8
-0.05
0...8˚
+0.1
0.4
-0.05
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2011-06-17
5
DSL70
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
±
±2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-17
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