DSL70E6327HTSA1 [INFINEON]

Trans Voltage Suppressor Diode, 245W, 50V V(RWM), Unidirectional, 4 Element, Silicon, ROHS COMPLIANT PACKAGE-4;
DSL70E6327HTSA1
型号: DSL70E6327HTSA1
厂家: Infineon    Infineon
描述:

Trans Voltage Suppressor Diode, 245W, 50V V(RWM), Unidirectional, 4 Element, Silicon, ROHS COMPLIANT PACKAGE-4

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中文:  中文翻译
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DSL70  
Silicon TVS diodes Array  
ESD / transient protection of e.g. ADSL, VDSL,  
ISDN, WAN, LAN, I²C Bus, Microcontroller Inputs,  
Video and other high-speed data lines in telecom  
applications:  
IEC61000-4-2 (ESD): ± ±15 kV (Air / Contact)  
IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns)  
IEC61000-4-5 (Lightning): 27 A (8/20 µs)  
Very low capacitance  
Extremly low reverse current < 5 nA  
Pb-free (RoHS compliant) package  
DSL70  
4
3
2
D3  
D2  
D4  
D1  
1
Type  
DSL70  
Package  
SOT143  
Configuration  
2 channel, rail to rail  
Marking  
E4s  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge per diode  
Symbol  
Value  
15  
27  
Unit  
kV  
A
1)  
2)  
V
ESD  
Peak pulse current (t = 8 / 20 µs)  
I
p
pp  
245  
W
Peak pulse power (t = 8 / 20 µs)  
P
p
pk  
°C  
Operating temperature range  
Storage temperature  
T
T
stg  
-55...125  
-65...150  
op  
1
V
according to IEC61000-4-2  
according to IEC61000-4-5  
ESD  
2
I
pp  
2011-06-17  
1
DSL70  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
Characteristics -  
-
-
-
-
50  
5
V
nA  
Reverse working voltage  
Reverse current  
V
RWM  
I
R
V = 50 V  
R
1)  
Forward clamping voltage  
= 1 A, t = 8/20 µs  
V
V
FC  
I
-
-
-
-
1
2.5  
5
1.5  
3
6
PP  
P
I
= 10 A, t = 8/20 µs  
PP  
P
I
= 24 A, t = 8/20 µs  
PP  
P
I
= 27 A, t = 8/20 µs  
6
9
PP  
P
pF  
Diode capacitance  
V = 0 V, f = 1 MHz, between I/0 and GND  
C
T
-
-
2.5  
1.25  
5
2.5  
R
V = 0 V, f = 1 MHz, between I/0 pins  
R
1
I
according to IEC61000-4-5  
PP  
2011-06-17  
2
DSL70  
Power derating curve P = ƒ (T )  
Forward clamping voltage V = ƒ(I )  
pk  
A
FC  
PP  
t = 8 / 20 µs  
p
8
110  
V
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6
5
4
3
2
1
0
°C  
A
0
25  
50  
75  
100  
150  
0
5
10  
15  
20  
25  
35  
T
I
PP  
A
Diode capacitance C = ƒ±(V )  
T
R
f = 1MHz  
3
I/O to GND  
pF  
1
0
0
V
5
10  
15  
20  
30  
V
R
2011-06-17  
3
DSL70  
Application example DSL70  
dual channel, rail to rail configuration  
Connector  
Protected signal line  
Protected signal line  
I/O  
I/O  
ESD sensitive  
device  
Vcc  
4
3
D3  
The protection diode should be placed  
very close to the location where the  
ESD or other transients can occur to  
keep loops and inductances as small  
as possible. Pin 1 should be connected  
directly to a ground plane on the board.  
D4  
D2  
D1  
1
2
2011-06-17  
4
Package SOT143  
DSL70  
Package Outline  
0.1  
1
0.1  
2.9  
B
1.9  
0.1 MAX.  
4
3
1
2
A
0.2  
0.08...0.1  
5
+0.1  
0.8  
-0.05  
0...8˚  
+0.1  
0.4  
-0.05  
M
M
0.2  
0.25  
B
A
1.7  
Foot Print  
0.8 1.2 0.8  
1.2  
0.8  
0.8  
Marking Layout (Example)  
Manufacturer  
2005, June  
RF s  
Date code (YM)  
Pin 1  
BFP181  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
1.15  
Pin 1  
2011-06-17  
5
DSL70  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
±
±2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-17  
6

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